JPH1121669A5 - - Google Patents

Info

Publication number
JPH1121669A5
JPH1121669A5 JP1997177243A JP17724397A JPH1121669A5 JP H1121669 A5 JPH1121669 A5 JP H1121669A5 JP 1997177243 A JP1997177243 A JP 1997177243A JP 17724397 A JP17724397 A JP 17724397A JP H1121669 A5 JPH1121669 A5 JP H1121669A5
Authority
JP
Japan
Prior art keywords
barrier film
sputtering
compound barrier
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997177243A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1121669A (ja
JP4557315B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP17724397A priority Critical patent/JP4557315B2/ja
Priority claimed from JP17724397A external-priority patent/JP4557315B2/ja
Publication of JPH1121669A publication Critical patent/JPH1121669A/ja
Publication of JPH1121669A5 publication Critical patent/JPH1121669A5/ja
Application granted granted Critical
Publication of JP4557315B2 publication Critical patent/JP4557315B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP17724397A 1997-07-02 1997-07-02 シリコン半導体に於ける化合物バリア膜形成方法 Expired - Lifetime JP4557315B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17724397A JP4557315B2 (ja) 1997-07-02 1997-07-02 シリコン半導体に於ける化合物バリア膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17724397A JP4557315B2 (ja) 1997-07-02 1997-07-02 シリコン半導体に於ける化合物バリア膜形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007256037A Division JP4610595B2 (ja) 2007-09-28 2007-09-28 シリコン半導体に於ける化合物バリア膜形成方法

Publications (3)

Publication Number Publication Date
JPH1121669A JPH1121669A (ja) 1999-01-26
JPH1121669A5 true JPH1121669A5 (enrdf_load_stackoverflow) 2005-03-17
JP4557315B2 JP4557315B2 (ja) 2010-10-06

Family

ID=16027663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17724397A Expired - Lifetime JP4557315B2 (ja) 1997-07-02 1997-07-02 シリコン半導体に於ける化合物バリア膜形成方法

Country Status (1)

Country Link
JP (1) JP4557315B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4163331B2 (ja) * 1999-07-14 2008-10-08 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法
US6699375B1 (en) * 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
KR100885664B1 (ko) 2008-04-03 2009-02-25 주식회사 케이아이자이맥스 고속/고밀도 마그네트론 스퍼터링 법을 이용한 후막제조방법
JP4813570B2 (ja) * 2008-04-03 2011-11-09 ケイアイザャイマックス カンパニー リミテッド 金属印刷回路基板の原板及び原板の製造方法
JP6799843B2 (ja) * 2016-04-22 2020-12-16 国立大学法人茨城大学 Ｒｕ成膜方法、Ｒｕ成膜装置
CN112858439B (zh) * 2020-12-30 2022-05-31 广州奥松电子股份有限公司 一种用于氧气传感器的金属氮化物膜及其制备方法

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