JP4557315B2 - シリコン半導体に於ける化合物バリア膜形成方法 - Google Patents
シリコン半導体に於ける化合物バリア膜形成方法 Download PDFInfo
- Publication number
- JP4557315B2 JP4557315B2 JP17724397A JP17724397A JP4557315B2 JP 4557315 B2 JP4557315 B2 JP 4557315B2 JP 17724397 A JP17724397 A JP 17724397A JP 17724397 A JP17724397 A JP 17724397A JP 4557315 B2 JP4557315 B2 JP 4557315B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- metal
- coil
- barrier film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 title claims description 45
- 150000001875 compounds Chemical class 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 title claims description 11
- 239000010703 silicon Substances 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 36
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000002159 abnormal effect Effects 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 78
- 239000010410 layer Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000013329 compounding Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 150000003606 tin compounds Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724397A JP4557315B2 (ja) | 1997-07-02 | 1997-07-02 | シリコン半導体に於ける化合物バリア膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724397A JP4557315B2 (ja) | 1997-07-02 | 1997-07-02 | シリコン半導体に於ける化合物バリア膜形成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007256037A Division JP4610595B2 (ja) | 2007-09-28 | 2007-09-28 | シリコン半導体に於ける化合物バリア膜形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1121669A JPH1121669A (ja) | 1999-01-26 |
| JPH1121669A5 JPH1121669A5 (enrdf_load_stackoverflow) | 2005-03-17 |
| JP4557315B2 true JP4557315B2 (ja) | 2010-10-06 |
Family
ID=16027663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17724397A Expired - Lifetime JP4557315B2 (ja) | 1997-07-02 | 1997-07-02 | シリコン半導体に於ける化合物バリア膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4557315B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4163331B2 (ja) * | 1999-07-14 | 2008-10-08 | アルバック成膜株式会社 | 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法 |
| US6699375B1 (en) * | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
| KR100885664B1 (ko) | 2008-04-03 | 2009-02-25 | 주식회사 케이아이자이맥스 | 고속/고밀도 마그네트론 스퍼터링 법을 이용한 후막제조방법 |
| JP4813570B2 (ja) * | 2008-04-03 | 2011-11-09 | ケイアイザャイマックス カンパニー リミテッド | 金属印刷回路基板の原板及び原板の製造方法 |
| JP6799843B2 (ja) * | 2016-04-22 | 2020-12-16 | 国立大学法人茨城大学 | Ｒｕ成膜方法、Ｒｕ成膜装置 |
| CN112858439B (zh) * | 2020-12-30 | 2022-05-31 | 广州奥松电子股份有限公司 | 一种用于氧气传感器的金属氮化物膜及其制备方法 |
-
1997
- 1997-07-02 JP JP17724397A patent/JP4557315B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1121669A (ja) | 1999-01-26 |
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