JPH11204791A5 - - Google Patents

Info

Publication number
JPH11204791A5
JPH11204791A5 JP1998162154A JP16215498A JPH11204791A5 JP H11204791 A5 JPH11204791 A5 JP H11204791A5 JP 1998162154 A JP1998162154 A JP 1998162154A JP 16215498 A JP16215498 A JP 16215498A JP H11204791 A5 JPH11204791 A5 JP H11204791A5
Authority
JP
Japan
Prior art keywords
metal
silicon
film
silicon region
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998162154A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204791A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10162154A priority Critical patent/JPH11204791A/ja
Priority claimed from JP10162154A external-priority patent/JPH11204791A/ja
Priority to US09/192,232 priority patent/US5989988A/en
Publication of JPH11204791A publication Critical patent/JPH11204791A/ja
Publication of JPH11204791A5 publication Critical patent/JPH11204791A5/ja
Pending legal-status Critical Current

Links

JP10162154A 1997-11-17 1998-06-10 半導体装置及びその製造方法 Pending JPH11204791A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10162154A JPH11204791A (ja) 1997-11-17 1998-06-10 半導体装置及びその製造方法
US09/192,232 US5989988A (en) 1997-11-17 1998-11-16 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31517397 1997-11-17
JP9-315173 1997-11-17
JP10162154A JPH11204791A (ja) 1997-11-17 1998-06-10 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007263671A Division JP2008060594A (ja) 1997-11-17 2007-10-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11204791A JPH11204791A (ja) 1999-07-30
JPH11204791A5 true JPH11204791A5 (enExample) 2005-04-07

Family

ID=26488046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10162154A Pending JPH11204791A (ja) 1997-11-17 1998-06-10 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US5989988A (enExample)
JP (1) JPH11204791A (enExample)

Families Citing this family (40)

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Publication number Priority date Publication date Assignee Title
JP4001662B2 (ja) * 1997-06-27 2007-10-31 株式会社半導体エネルギー研究所 シリコンの洗浄方法および多結晶シリコンの作製方法
US6218274B1 (en) * 1997-10-28 2001-04-17 Sony Corporation Semiconductor device and manufacturing method thereof
KR100276388B1 (ko) * 1997-10-30 2001-01-15 윤종용 코발트/니오븀 이중 금속층 구조를 이용한 실리사이드 형성 방법
JPH11283935A (ja) * 1998-03-30 1999-10-15 Nec Corp 半導体装置の製造方法
US6207563B1 (en) 1999-02-05 2001-03-27 Advanced Micro Devices, Inc. Low-leakage CoSi2-processing by high temperature thermal processing
US6440851B1 (en) * 1999-10-12 2002-08-27 International Business Machines Corporation Method and structure for controlling the interface roughness of cobalt disilicide
JP3554514B2 (ja) * 1999-12-03 2004-08-18 松下電器産業株式会社 半導体装置及びその製造方法
US6281102B1 (en) 2000-01-13 2001-08-28 Integrated Device Technology, Inc. Cobalt silicide structure for improving gate oxide integrity and method for fabricating same
US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
US6653227B1 (en) * 2000-08-31 2003-11-25 Chartered Semiconductor Manufacturing Ltd. Method of cobalt silicidation using an oxide-Titanium interlayer
US6346477B1 (en) * 2001-01-09 2002-02-12 Research Foundation Of Suny - New York Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
US6388327B1 (en) 2001-01-09 2002-05-14 International Business Machines Corporation Capping layer for improved silicide formation in narrow semiconductor structures
JP3614782B2 (ja) * 2001-01-19 2005-01-26 シャープ株式会社 半導体装置の製造方法及びその方法により製造される半導体装置
US6524940B2 (en) * 2001-04-26 2003-02-25 Applied Materials, Inc. Methods and devices utilizing the ammonium termination of silicon dioxide films
JP2002353443A (ja) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US6884723B2 (en) 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US20030119316A1 (en) * 2001-12-21 2003-06-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using oxidizing agents
US7121926B2 (en) 2001-12-21 2006-10-17 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article
US7049237B2 (en) * 2001-12-21 2006-05-23 Micron Technology, Inc. Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases
US6734099B2 (en) * 2001-12-28 2004-05-11 Texas Insturments Incorporated System for preventing excess silicon consumption in ultra shallow junctions
US6743721B2 (en) 2002-06-10 2004-06-01 United Microelectronics Corp. Method and system for making cobalt silicide
JP2004047608A (ja) * 2002-07-10 2004-02-12 Toshiba Corp 半導体装置及びその製造方法
JP4466902B2 (ja) * 2003-01-10 2010-05-26 日鉱金属株式会社 ニッケル合金スパッタリングターゲット
US7012024B2 (en) * 2003-08-15 2006-03-14 Micron Technology, Inc. Methods of forming a transistor with an integrated metal silicide gate electrode
KR100558006B1 (ko) * 2003-11-17 2006-03-06 삼성전자주식회사 니켈 샐리사이드 공정들 및 이를 사용하여 반도체소자를제조하는 방법들
KR100629266B1 (ko) * 2004-08-09 2006-09-29 삼성전자주식회사 샐리사이드 공정 및 이를 사용한 반도체 소자의 제조방법
JP4904482B2 (ja) * 2005-01-18 2012-03-28 国立大学法人東北大学 半導体装置
KR100832714B1 (ko) * 2005-12-28 2008-05-28 동부일렉트로닉스 주식회사 트랜지스터의 제조방법
JP2008103465A (ja) * 2006-10-18 2008-05-01 Toshiba Corp 半導体装置及びその製造方法
JP2009167530A (ja) 2009-02-10 2009-07-30 Nippon Mining & Metals Co Ltd ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜
EP2548994B1 (en) 2010-03-19 2015-11-04 JX Nippon Mining & Metals Corporation NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM
US8431995B2 (en) * 2010-05-13 2013-04-30 International Business Machines Corporation Methodology for fabricating isotropically recessed drain regions of CMOS transistors
US8716798B2 (en) 2010-05-13 2014-05-06 International Business Machines Corporation Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors
CN103337452A (zh) * 2013-06-26 2013-10-02 上海华力微电子有限公司 在硅锗层上形成镍自对准硅化物的工艺方法
KR102238257B1 (ko) 2014-08-26 2021-04-13 삼성전자주식회사 반도체 소자의 제조 방법
US9385197B2 (en) * 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
US9755047B2 (en) * 2015-10-27 2017-09-05 United Microelectronics Corp. Semiconductor process and semiconductor device
US11088033B2 (en) 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
WO2024195739A1 (ja) * 2023-03-23 2024-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US4663191A (en) * 1985-10-25 1987-05-05 International Business Machines Corporation Salicide process for forming low sheet resistance doped silicon junctions
JP2891092B2 (ja) * 1994-03-07 1999-05-17 日本電気株式会社 半導体装置の製造方法
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
US5744395A (en) * 1996-10-16 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure
US5780349A (en) * 1997-02-20 1998-07-14 National Semiconductor Corporation Self-aligned MOSFET gate/source/drain salicide formation
US5851891A (en) * 1997-04-21 1998-12-22 Advanced Micro Devices, Inc. IGFET method of forming with silicide contact on ultra-thin gate

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