JPH11166073A - Epoxy resin composition for sealing semiconductor and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition capable of exhibiting excellent moisture resistance by including an epoxy resin, a phenol resin-curing agent, a curing accelerator, an inorganic filler, an ion-capturing agent and aluminum nitride. SOLUTION: This composition contains (A) an epoxy resin, (B) a phenolic resin-curing agent, (C) a curing accelerator, (D) an inorganic filler, (E) an ion- capturing agent, and (F) aluminum nitride, wherein the component (F) is contained in an amount of 3-20 wt.% in the total resin composition. The component F preferably has an average particle diameter of 0.1-50 μm and the maximum particle diameter of <=150 μm in order to improve the flowability of the composition. The shape of the component (F) is preferably powdery. The composition is obtained by sufficiently mixing the components (A) to (F), further melt-kneading the mixture with a roll or the like, cooling the product, and subsequently crushing the solidified product into proper sizes. The sealing of an electronic part such as a semiconductor with the composition can provide a highly reliable semiconductor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a highly reliable epoxy resin composition for semiconductor encapsulation having excellent moisture resistance, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Semiconductor elements such as transistors, ICs, and LSIs have been adopted because a method of sealing with an epoxy resin composition (hereinafter referred to as a resin composition) is suitable for low cost and mass production. In terms of reliability, it is at a level that can withstand use by improving the progress of epoxy resin. However, in recent years, with the increase in the degree of integration of semiconductors, the corrosion of aluminum wiring has started to occur early due to the reduction in the width of aluminum wiring on IC chips. This corrosion is promoted by the presence of moisture absorbed by the cured product of the resin composition, and it has been required to further improve the anticorrosion effect and moisture resistance of the cured product of the resin composition. Regarding the mechanism of corrosion of aluminum wiring, Kaino (Applied Physics, 49, (198)
According to the review of 0)), it is known that the presence of ionic impurities such as Cl and Na promotes the progress of corrosion. In the resin composition for semiconductor encapsulation, trace amounts of ionic impurities due to raw materials are present, and corrosion of aluminum wiring is promoted. Therefore, these resin compositions usually trap ionic impurities. An ion scavenger is included. Although the moisture resistance has been considerably improved by using a resin composition containing an ion scavenger, some of them have not been able to cope with recent diversifying use conditions of semiconductor devices.

[0003]

SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition for encapsulating a semiconductor having excellent moisture resistance and a semiconductor device using the same.

[0004]

That is, the present invention provides (A)
In the resin composition comprising epoxy resin, (B) phenolic resin curing agent, (C) curing accelerator, (D) inorganic filler, (E) ion scavenger, and (F) aluminum nitride, in all resin compositions An epoxy resin composition for encapsulating a semiconductor, comprising 3 to 20% by weight of aluminum nitride.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention includes, for example, biphenyl type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin,
Cresol novolak epoxy resin, phenol novolak epoxy resin, brominated epoxy resin, triphenolmethane epoxy resin, alkyl-modified triphenolmethane epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol epoxy resin, etc. However, the present invention is not limited to these. These epoxy resins may be used alone or in combination.

The phenolic resin curing agent used in the present invention includes, for example, phenol novolak resin, cresol novolak resin, xylylene-modified phenol resin,
Examples include, but are not limited to, dicyclopentadiene-modified phenolic resins and terpene-modified phenolic resins. These phenol resins may be used alone or as a mixture.

The curing accelerator used in the present invention includes:
Any substance that promotes the reaction between the epoxy group and the phenolic hydroxyl group may be used, and those generally used in resin compositions can be widely used. For example, tertiary amines such as benzyldimethylamine, Imidazoles such as -methylimidazole, 1,8-diazabicyclo (5,
Organic phosphorus compounds such as (4,0) undecene-7 and triphenylphosphine are exemplified, but not limited thereto. These curing accelerators may be used alone or in combination. Examples of the inorganic filler other than aluminum nitride used in the present invention include crystalline silica, fused silica, secondary agglomerated silica, and alumina, and these may be used alone or as a mixture. Examples of the ion scavenger used in the present invention include bismuth compounds and hydrotalcite compounds which can be used in this field, and these may be used alone or as a mixture.

The inventor of the present invention believes that, in addition to the ionic impurities in the resin composition, phenolic hydroxyl groups, which are considered to be present as unreacted components in the cured product, promote corrosion and the like and adversely affect moisture resistance. As a result of presumption and various investigations, it was found that by incorporating aluminum nitride into the resin composition, the moisture resistance of the semiconductor device sealed with the resin composition was improved. In other words, by using a resin composition containing aluminum nitride, when the semiconductor device absorbs moisture, that is, when the cured product of the resin composition absorbs moisture, the aluminum nitride causes the system of the cured product to shift too much to the acidic side. It is thought to prevent. This is thought to be because aluminum nitride reacts with moisture to generate alkaline ammonia, reacts with phenolic hydroxyl groups, which are presumed to be a factor in corrosion, and inhibits the adverse effects of phenolic hydroxyl groups in the cured product.

The aluminum nitride used in the present invention has an average particle size of 0.1 to 50 μm and a maximum particle size of 15 μm.
Those having a size of 0 μm or less are preferred for improving the fluidity of the resin composition. Also, the shape is not particularly limited, for example,
Powder form is preferred. The compounding amount is preferably 3 to 20% by weight in the whole resin composition. If the amount is less than 3% by weight, the system of the cured product becomes acidic, and if it exceeds 20% by weight, the system of the cured product becomes alkaline and the moisture resistance is undesirably reduced.

[0010] The resin composition of the present invention may further comprise, if necessary, a natural wax, a synthetic wax,
Release agents such as higher fatty acids and their metal salts, paraffin,
Brominated epoxy resin, hexabromobenzene, decabromobiphenyl ether, antimony trioxide, flame retardant such as phosphorus compound, carbon black, coloring agent such as red iron,
A silane coupling agent, an antioxidant, a low-stress component such as silicone oil or silicone rubber, a thermoplastic resin, or the like can be appropriately added and blended. The resin composition of the present invention is prepared by sufficiently mixing the components (A) to (F) and other additives with a mixer or the like, and then melt-kneading with a roll or a kneader and solidifying by cooling. It can be crushed to a suitable size. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor using the resin composition of the present invention, it is only necessary to cure and mold by a conventional molding method such as transfer molding, compression molding and injection molding.

[0011]

The present invention will be specifically described below with reference to examples.
However, the present invention is not limited to these examples. The mixing unit is parts by weight. Example 1 Cresol novolak type epoxy resin (epoxy equivalent 200, softening point 70 ° C) 90 parts by weight Phenol novolak resin (hydroxyl equivalent 104, softening point 110 ° C) 50 parts by weight 1,8-diazabicyclo (5,4,0) undecene -7 parts (hereinafter referred to as DBU) 2 parts by weight Fused silica (RD-8, manufactured by Tatsumori Co., Ltd.) 473 parts by weight Ion scavenger (Bi ₆ O ₆ (OH) _4.2 (NO ₃ ) _1.8 , true specific gravity 7 .06) 1 part by weight Aluminum nitride (manufactured by Dow Chemical Co., Ltd., SCAN70) 27 parts by weight Carnauba wax 3 parts by weight Brominated epoxy resin (epoxy equivalent 270, softening point 70 ° C.) 10 parts by weight Antimony trioxide 9 parts by weight Carbon black 2 parts by weight γ-ureidopropyltriethoxysilane 2 parts by weight γ-mercaptopropyltrimethoxysilane Parts were mixed thoroughly at room temperature, and kneaded using a twin-screw hot roll and then at 80 to 100 ° C., and the tablet is pulverized after cooling,
A resin composition was obtained. This resin composition was evaluated by the following method. Table 1 shows the results.

Evaluation method Moisture resistance: Using a transfer molding machine, mold temperature 17
16pDIP for testing (chip size 3mm × 3.5m) at 5 ° C, injection pressure 70kg / cm ² , curing time 120 seconds
m), followed by post-curing for 4 hours at 175 ° C., and then using a pressure cooker at 125 ° C.
The device was placed under 2.3 atm and the current value between the leads was measured over time, and the time until the leakage current became 10 nA or more was measured. The unit is time.

Examples 2 and 3 Compounded according to the formulation shown in Table 1, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. Comparative Examples 1 and 2 Compounded according to the formulation shown in Table 1, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results.

[Table 1]

[0014]

The epoxy resin composition for encapsulating a semiconductor of the present invention has excellent moisture resistance and can provide a highly reliable semiconductor device.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/29 H01L 23/30 R 23/31

Claims (2)

[Claims] 1. An epoxy resin, (B) a phenol resin curing agent, (C) a curing accelerator, (D) an inorganic filler,
A resin composition comprising (E) an ion scavenger and (F) aluminum nitride, wherein the total resin composition contains aluminum nitride in an amount of 3 to 20% by weight. . 2. A semiconductor device which is encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.