JPH11162831A - 投影露光装置及び投影露光方法 - Google Patents

投影露光装置及び投影露光方法

Info

Publication number
JPH11162831A
JPH11162831A JP9338109A JP33810997A JPH11162831A JP H11162831 A JPH11162831 A JP H11162831A JP 9338109 A JP9338109 A JP 9338109A JP 33810997 A JP33810997 A JP 33810997A JP H11162831 A JPH11162831 A JP H11162831A
Authority
JP
Japan
Prior art keywords
cleaning
optical member
projection exposure
optical system
projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9338109A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11162831A5 (enExample
Inventor
Tetsuo Taniguchi
哲夫 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP9338109A priority Critical patent/JPH11162831A/ja
Priority to PCT/JP1998/005258 priority patent/WO1999027568A1/ja
Priority to AU11757/99A priority patent/AU1175799A/en
Publication of JPH11162831A publication Critical patent/JPH11162831A/ja
Priority to US09/577,020 priority patent/US6496257B1/en
Priority to US10/212,278 priority patent/US20030011763A1/en
Priority to US11/008,166 priority patent/US7061575B2/en
Publication of JPH11162831A5 publication Critical patent/JPH11162831A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9338109A 1997-11-21 1997-11-21 投影露光装置及び投影露光方法 Pending JPH11162831A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9338109A JPH11162831A (ja) 1997-11-21 1997-11-21 投影露光装置及び投影露光方法
PCT/JP1998/005258 WO1999027568A1 (en) 1997-11-21 1998-11-20 Projection aligner and projection exposure method
AU11757/99A AU1175799A (en) 1997-11-21 1998-11-20 Projection aligner and projection exposure method
US09/577,020 US6496257B1 (en) 1997-11-21 2000-05-22 Projection exposure apparatus and method
US10/212,278 US20030011763A1 (en) 1997-11-21 2002-08-06 Projection exposure apparatus and method
US11/008,166 US7061575B2 (en) 1997-11-21 2004-12-10 Projection exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9338109A JPH11162831A (ja) 1997-11-21 1997-11-21 投影露光装置及び投影露光方法

Publications (2)

Publication Number Publication Date
JPH11162831A true JPH11162831A (ja) 1999-06-18
JPH11162831A5 JPH11162831A5 (enExample) 2006-04-27

Family

ID=18315004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9338109A Pending JPH11162831A (ja) 1997-11-21 1997-11-21 投影露光装置及び投影露光方法

Country Status (1)

Country Link
JP (1) JPH11162831A (enExample)

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073951A (ja) * 2004-09-06 2006-03-16 Toshiba Corp 液浸光学装置及び洗浄方法
JPWO2004050266A1 (ja) * 2002-12-03 2006-03-30 株式会社ニコン 汚染物質除去方法及び装置、並びに露光方法及び装置
JP2006140459A (ja) * 2004-10-13 2006-06-01 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2006165502A (ja) * 2004-06-21 2006-06-22 Nikon Corp 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006179909A (ja) * 2004-12-20 2006-07-06 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2007130527A (ja) * 2005-11-08 2007-05-31 Seiko Epson Corp 液滴吐出装置
KR100776771B1 (ko) * 1999-10-12 2007-11-16 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영 장치
JP2007318129A (ja) * 2006-05-22 2007-12-06 Asml Netherlands Bv リソグラフィ装置およびリソグラフィ装置洗浄方法
WO2008026593A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device production method, cleaning method, and cleaning member
JP2008523432A (ja) * 2004-12-10 2008-07-03 イグジテック・リミテッド 位置決め装置
JP2008252125A (ja) * 2008-06-27 2008-10-16 Nikon Corp 光学部品の洗浄機構を備えた液浸投影露光装置および液浸光学部品洗浄方法
WO2008146819A1 (ja) * 2007-05-28 2008-12-04 Nikon Corporation 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
JP2009500828A (ja) * 2005-07-01 2009-01-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 浸漬リソグラフィにおいて超臨界流体を用いてウェーハを乾燥し、レンズを洗浄するための方法及びシステム
JP2009016838A (ja) * 2007-07-09 2009-01-22 Asml Netherlands Bv 基板および基板を使用する方法
JP2009147374A (ja) * 2004-12-20 2009-07-02 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP2009188383A (ja) * 2007-12-18 2009-08-20 Asml Netherlands Bv リソグラフィ装置及び液浸リソグラフィ装置の表面を洗浄する方法
WO2009116625A1 (ja) * 2008-03-19 2009-09-24 株式会社ニコン クリーニング工具、クリーニング方法、及びデバイス製造方法
JP2010093298A (ja) * 2003-04-11 2010-04-22 Nikon Corp 液浸リソグラフィにおける光学素子の洗浄方法
JP2011097108A (ja) * 2007-05-04 2011-05-12 Asml Netherlands Bv クリーニングデバイス、リソグラフィ装置およびリソグラフィ装置のクリーニング方法
KR101166008B1 (ko) 2004-11-19 2012-07-18 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법, 노광 장치 및 디바이스 제조방법
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
JP2014033224A (ja) * 2004-12-06 2014-02-20 Nikon Corp メンテナンス方法、露光装置、及びデバイス製造方法
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
KR101523829B1 (ko) * 2003-05-23 2015-05-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2015128196A (ja) * 2015-04-10 2015-07-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US10451973B2 (en) 2005-05-03 2019-10-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10495981B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2021233631A1 (en) * 2020-05-18 2021-11-25 Carl Zeiss Smt Gmbh Method for maintaining a projection exposure apparatus, service module and arrangement for semiconductor lithography
US11205562B2 (en) 2018-10-25 2021-12-21 Tokyo Electron Limited Hybrid electron beam and RF plasma system for controlled content of radicals and ions
US12014901B2 (en) 2018-10-25 2024-06-18 Tokyo Electron Limited Tailored electron energy distribution function by new plasma source: hybrid electron beam and RF plasma

Cited By (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100776771B1 (ko) * 1999-10-12 2007-11-16 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영 장치
JPWO2004050266A1 (ja) * 2002-12-03 2006-03-30 株式会社ニコン 汚染物質除去方法及び装置、並びに露光方法及び装置
JP2009027196A (ja) * 2002-12-03 2009-02-05 Nikon Corp 汚染物質除去方法及び露光方法
JP2009027195A (ja) * 2002-12-03 2009-02-05 Nikon Corp 汚染物質除去方法及び露光方法
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
KR101525335B1 (ko) * 2003-04-11 2015-06-03 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP2014225703A (ja) * 2003-04-11 2014-12-04 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
KR20140048312A (ko) * 2003-04-11 2014-04-23 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP2012138624A (ja) * 2003-04-11 2012-07-19 Nikon Corp 液浸リソグラフィにおける光学素子の洗浄方法
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
JP2010093298A (ja) * 2003-04-11 2010-04-22 Nikon Corp 液浸リソグラフィにおける光学素子の洗浄方法
JP2018025818A (ja) * 2003-04-11 2018-02-15 株式会社ニコン 液浸リソグラフィにおける光学系の洗浄方法
JP2017037333A (ja) * 2003-04-11 2017-02-16 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
JP2011171758A (ja) * 2003-04-11 2011-09-01 Nikon Corp 液浸リソグラフィにおける光学素子の洗浄方法
JP2013251573A (ja) * 2003-04-11 2013-12-12 Nikon Corp 液浸リソグラフィにおける光学素子の洗浄方法
JP2016053721A (ja) * 2003-04-11 2016-04-14 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
JP2017107215A (ja) * 2003-05-23 2017-06-15 株式会社ニコン 露光装置及びデバイス製造方法
KR101523829B1 (ko) * 2003-05-23 2015-05-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US8810767B2 (en) 2004-06-21 2014-08-19 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
JP2006165502A (ja) * 2004-06-21 2006-06-22 Nikon Corp 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
US8698998B2 (en) 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8174669B2 (en) 2004-09-06 2012-05-08 Kabushiki Kaisha Toshiba Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
JP2006073951A (ja) * 2004-09-06 2006-03-16 Toshiba Corp 液浸光学装置及び洗浄方法
JP2006140459A (ja) * 2004-10-13 2006-06-01 Nikon Corp 露光装置、露光方法及びデバイス製造方法
KR101166008B1 (ko) 2004-11-19 2012-07-18 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법, 노광 장치 및 디바이스 제조방법
JP2014033224A (ja) * 2004-12-06 2014-02-20 Nikon Corp メンテナンス方法、露光装置、及びデバイス製造方法
JP2008523432A (ja) * 2004-12-10 2008-07-03 イグジテック・リミテッド 位置決め装置
US8704129B2 (en) 2004-12-10 2014-04-22 Tel Solar Ag Positioning device
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9116443B2 (en) 2004-12-20 2015-08-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8462312B2 (en) 2004-12-20 2013-06-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10509326B2 (en) 2004-12-20 2019-12-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8233137B2 (en) 2004-12-20 2012-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9835960B2 (en) 2004-12-20 2017-12-05 Asml Netherlands B.V. Lithographic apparatus
JP2012044227A (ja) * 2004-12-20 2012-03-01 Asml Netherlands Bv リソグラフィ装置
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009147374A (ja) * 2004-12-20 2009-07-02 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP2008277854A (ja) * 2004-12-20 2008-11-13 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2008263221A (ja) * 2004-12-20 2008-10-30 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2006179909A (ja) * 2004-12-20 2006-07-06 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
US10248035B2 (en) 2004-12-20 2019-04-02 Asml Netherlands B.V. Lithographic apparatus
JP2017187791A (ja) * 2004-12-20 2017-10-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイス製造方法
JP2008227547A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
US9417535B2 (en) 2004-12-20 2016-08-16 Asml Netherlands B.V. Lithographic apparatus
US9329494B2 (en) 2004-12-20 2016-05-03 Asml Netherlands B.V. Lithographic apparatus
JP2008227548A (ja) * 2004-12-20 2008-09-25 Asml Netherlands Bv リソグラフィ装置とデバイス製造方法
JP2016130864A (ja) * 2004-12-20 2016-07-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
US10495981B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10495980B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10451973B2 (en) 2005-05-03 2019-10-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10488759B2 (en) 2005-05-03 2019-11-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP2009500828A (ja) * 2005-07-01 2009-01-08 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 浸漬リソグラフィにおいて超臨界流体を用いてウェーハを乾燥し、レンズを洗浄するための方法及びシステム
JP2007130527A (ja) * 2005-11-08 2007-05-31 Seiko Epson Corp 液滴吐出装置
JP2007318129A (ja) * 2006-05-22 2007-12-06 Asml Netherlands Bv リソグラフィ装置およびリソグラフィ装置洗浄方法
WO2008026593A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device production method, cleaning method, and cleaning member
US8570484B2 (en) 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
JP2011238940A (ja) * 2007-05-04 2011-11-24 Asml Netherlands Bv 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法
JP2011097108A (ja) * 2007-05-04 2011-05-12 Asml Netherlands Bv クリーニングデバイス、リソグラフィ装置およびリソグラフィ装置のクリーニング方法
JP2011187971A (ja) * 2007-05-04 2011-09-22 Asml Netherlands Bv 洗浄装置及びリソグラフィ装置洗浄方法
JP2011238939A (ja) * 2007-05-04 2011-11-24 Asml Netherlands Bv 洗浄装置、リソグラフィ装置、及びリソグラフィ装置洗浄方法
US8189168B2 (en) 2007-05-28 2012-05-29 Nikon Corporation Exposure apparatus, device production method, cleaning apparatus, cleaning method, and exposure method
WO2008146819A1 (ja) * 2007-05-28 2008-12-04 Nikon Corporation 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
JP2009016838A (ja) * 2007-07-09 2009-01-22 Asml Netherlands Bv 基板および基板を使用する方法
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9289802B2 (en) 2007-12-18 2016-03-22 Asml Netherlands B.V. Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus
JP2009188383A (ja) * 2007-12-18 2009-08-20 Asml Netherlands Bv リソグラフィ装置及び液浸リソグラフィ装置の表面を洗浄する方法
WO2009116625A1 (ja) * 2008-03-19 2009-09-24 株式会社ニコン クリーニング工具、クリーニング方法、及びデバイス製造方法
JP5152321B2 (ja) * 2008-03-19 2013-02-27 株式会社ニコン クリーニング工具、クリーニング方法、及びデバイス製造方法
JP2008252125A (ja) * 2008-06-27 2008-10-16 Nikon Corp 光学部品の洗浄機構を備えた液浸投影露光装置および液浸光学部品洗浄方法
JP2015128196A (ja) * 2015-04-10 2015-07-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11205562B2 (en) 2018-10-25 2021-12-21 Tokyo Electron Limited Hybrid electron beam and RF plasma system for controlled content of radicals and ions
US12014901B2 (en) 2018-10-25 2024-06-18 Tokyo Electron Limited Tailored electron energy distribution function by new plasma source: hybrid electron beam and RF plasma
WO2021233631A1 (en) * 2020-05-18 2021-11-25 Carl Zeiss Smt Gmbh Method for maintaining a projection exposure apparatus, service module and arrangement for semiconductor lithography
US12332576B2 (en) 2020-05-18 2025-06-17 Carl Zeiss Smt Gmbh Method for maintaining a projection exposure apparatus, service module and arrangement for semiconductor lithography

Similar Documents

Publication Publication Date Title
JPH11162831A (ja) 投影露光装置及び投影露光方法
US7061575B2 (en) Projection exposure apparatus and method
CN100407371C (zh) 曝光装置和器件加工方法
JP5079717B2 (ja) 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法
JP5464155B2 (ja) 露光装置、及び露光方法
CN101385124B (zh) 维修方法、曝光方法及装置、以及组件制造方法
US20050121144A1 (en) Processing system and exposure apparatus using the same
WO2004105107A1 (ja) 露光装置及びデバイス製造方法
JP5161293B2 (ja) 露光装置及びデバイス製造方法
KR20010040044A (ko) 전사 투영 장치
JP5639605B2 (ja) リソグラフィ装置及びデバイス製造方法
JP2006134999A (ja) 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法
JP2009283987A (ja) センサー・シールド
JP2008060539A (ja) 液体充填レンズ要素、レンズ要素を備えるリソグラフィ装置およびデバイス製造方法
JP2011119725A (ja) リソグラフィ装置及びデバイス製造方法
JPH08321457A (ja) 露光装置
JP2009141155A (ja) 露光装置、露光方法、及びデバイス製造方法
KR100416660B1 (ko) 노광시스템의 페리클 검사장치
US20080151201A1 (en) Lithographic apparatus and method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041118

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041122

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060313

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070913

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080804

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081001

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090105