JPH11116399A - 炭化タンタルのコーティング方法及びこの方法を用いて製造した単結晶製造装置 - Google Patents
炭化タンタルのコーティング方法及びこの方法を用いて製造した単結晶製造装置Info
- Publication number
- JPH11116399A JPH11116399A JP9284035A JP28403597A JPH11116399A JP H11116399 A JPH11116399 A JP H11116399A JP 9284035 A JP9284035 A JP 9284035A JP 28403597 A JP28403597 A JP 28403597A JP H11116399 A JPH11116399 A JP H11116399A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- single crystal
- crucible
- coating
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 73
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910003468 tantalcarbide Inorganic materials 0.000 title claims abstract description 54
- 238000000576 coating method Methods 0.000 title claims abstract description 23
- 239000011248 coating agent Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 74
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 38
- 239000010439 graphite Substances 0.000 abstract description 38
- 238000010000 carbonizing Methods 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9284035A JPH11116399A (ja) | 1997-10-16 | 1997-10-16 | 炭化タンタルのコーティング方法及びこの方法を用いて製造した単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9284035A JPH11116399A (ja) | 1997-10-16 | 1997-10-16 | 炭化タンタルのコーティング方法及びこの方法を用いて製造した単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11116399A true JPH11116399A (ja) | 1999-04-27 |
| JPH11116399A5 JPH11116399A5 (enExample) | 2006-09-21 |
Family
ID=17673465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9284035A Pending JPH11116399A (ja) | 1997-10-16 | 1997-10-16 | 炭化タンタルのコーティング方法及びこの方法を用いて製造した単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11116399A (enExample) |
Cited By (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001004389A1 (de) * | 1999-07-07 | 2001-01-18 | Siemens Aktiengesellschaft | Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel |
| WO2001027361A1 (en) * | 1999-10-08 | 2001-04-19 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
| US6537371B2 (en) * | 1997-01-22 | 2003-03-25 | The Fox Group, Inc. | Niobium crucible fabrication and treatment |
| US6547877B2 (en) * | 1996-01-22 | 2003-04-15 | The Fox Group, Inc. | Tantalum crucible fabrication and treatment |
| US6562130B2 (en) * | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
| US6562131B2 (en) * | 1999-07-20 | 2003-05-13 | The Fox Group, Inc. | Method for growing single crystal silicon carbide |
| JP2006001787A (ja) * | 2004-06-17 | 2006-01-05 | Hitachi Chem Co Ltd | フッ化カルシウム結晶育成ルツボ、フッ化カルシウム結晶の製造方法及びフッ化カルシウム結晶 |
| US7056383B2 (en) | 2004-02-13 | 2006-06-06 | The Fox Group, Inc. | Tantalum based crucible |
| JP2006273585A (ja) * | 2005-03-25 | 2006-10-12 | Ngk Insulators Ltd | 単結晶製造装置 |
| WO2007144955A1 (ja) * | 2006-06-16 | 2007-12-21 | Sumitomo Electric Industries, Ltd. | Ｉｉｉ族窒化物単結晶およびその成長方法 |
| JP2008163461A (ja) * | 2006-12-27 | 2008-07-17 | General Electric Co <Ge> | 高反応性合金の溶融時の炭素汚染低減方法 |
| JP2010126375A (ja) * | 2008-11-25 | 2010-06-10 | Sumitomo Electric Ind Ltd | 結晶製造方法 |
| US7790101B2 (en) * | 2006-12-27 | 2010-09-07 | General Electric Company | Articles for use with highly reactive alloys |
| JP2012052235A (ja) * | 2011-09-12 | 2012-03-15 | Toyo Tanso Kk | タンタルチューブとｐｉｔ炭素芯の製造方法、タンタルチューブとｐｉｔ炭素芯、タンタル炭化物配線の製造方法及びタンタル炭化物配線 |
| JP2012117096A (ja) * | 2010-11-30 | 2012-06-21 | Toyo Tanso Kk | タンタル容器の浸炭処理方法 |
| US8211244B2 (en) | 2003-08-01 | 2012-07-03 | Toyo Tanso Co., Ltd. | Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrode |
| JP2013014519A (ja) * | 2012-10-26 | 2013-01-24 | Sumitomo Electric Ind Ltd | 結晶製造方法 |
| CN103060744A (zh) * | 2013-02-05 | 2013-04-24 | 中国电子科技集团公司第四十六研究所 | 一种超高温度下使用的复合型坩埚的制备方法 |
| CN103160928A (zh) * | 2011-12-13 | 2013-06-19 | 北京有色金属研究总院 | 一种生长高质量SiC单晶的籽晶处理方法 |
| US8535600B2 (en) | 2009-03-23 | 2013-09-17 | Kabushiki Kaisha Toyota Chuo Kenkyusho | High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive |
| JP2013193943A (ja) * | 2012-03-22 | 2013-09-30 | Toyota Central R&D Labs Inc | 高耐熱部材およびその製造方法 |
| JP2013201202A (ja) * | 2012-03-23 | 2013-10-03 | Epiquest:Kk | Ｋセル用るつぼ、ｋセル、およびｍｂｅ装置 |
| US8858697B2 (en) | 2011-10-28 | 2014-10-14 | General Electric Company | Mold compositions |
| US8906292B2 (en) | 2012-07-27 | 2014-12-09 | General Electric Company | Crucible and facecoat compositions |
| CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
| US8932518B2 (en) | 2012-02-29 | 2015-01-13 | General Electric Company | Mold and facecoat compositions |
| US8992824B2 (en) | 2012-12-04 | 2015-03-31 | General Electric Company | Crucible and extrinsic facecoat compositions |
| US9011205B2 (en) | 2012-02-15 | 2015-04-21 | General Electric Company | Titanium aluminide article with improved surface finish |
| US9192983B2 (en) | 2013-11-26 | 2015-11-24 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| EP2439308A4 (en) * | 2009-06-01 | 2017-01-04 | Toyo Tanso Co., Ltd. | Method for carburizing tantalum member, and tantalum member |
| US9592548B2 (en) | 2013-01-29 | 2017-03-14 | General Electric Company | Calcium hexaluminate-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| CN108179470A (zh) * | 2017-12-29 | 2018-06-19 | 北京华进创威电子有限公司 | 一种低成本的氮化铝晶体生长方法 |
| US10391547B2 (en) | 2014-06-04 | 2019-08-27 | General Electric Company | Casting mold of grading with silicon carbide |
| WO2019171901A1 (ja) * | 2018-03-08 | 2019-09-12 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
| US20200198980A1 (en) * | 2018-12-21 | 2020-06-25 | Showa Denko K.K. | Method of manufacturing tantalum carbide material |
| CN113088869A (zh) * | 2021-03-31 | 2021-07-09 | 哈尔滨化兴软控科技有限公司 | 一种碳化钽片的制备方法 |
| CN115261991A (zh) * | 2022-07-08 | 2022-11-01 | 江苏芯恒惟业电子科技有限公司 | 一种降低碳化硅单晶内部碳包裹体缺陷密度的方法 |
| CN115784778A (zh) * | 2022-11-21 | 2023-03-14 | 中材人工晶体研究院(山东)有限公司 | 一种含有碳化钽涂层的坩埚的制备方法 |
-
1997
- 1997-10-16 JP JP9284035A patent/JPH11116399A/ja active Pending
Cited By (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6547877B2 (en) * | 1996-01-22 | 2003-04-15 | The Fox Group, Inc. | Tantalum crucible fabrication and treatment |
| US6537371B2 (en) * | 1997-01-22 | 2003-03-25 | The Fox Group, Inc. | Niobium crucible fabrication and treatment |
| US6562130B2 (en) * | 1997-01-22 | 2003-05-13 | The Fox Group, Inc. | Low defect axially grown single crystal silicon carbide |
| JP2003504296A (ja) * | 1999-07-07 | 2003-02-04 | シーメンス アクチエンゲゼルシヤフト | 箔で内張りされた坩堝を有するＳｉＣ単結晶昇華成長装置 |
| US6770136B2 (en) | 1999-07-07 | 2004-08-03 | Siemens Aktiengesellschaft | Device having a foil-lined crucible for the sublimation growth of an SiC single crystal |
| WO2001004389A1 (de) * | 1999-07-07 | 2001-01-18 | Siemens Aktiengesellschaft | Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel |
| US6562131B2 (en) * | 1999-07-20 | 2003-05-13 | The Fox Group, Inc. | Method for growing single crystal silicon carbide |
| WO2001027361A1 (en) * | 1999-10-08 | 2001-04-19 | Cree, Inc. | Method and apparatus for growing silicon carbide crystals |
| US8211244B2 (en) | 2003-08-01 | 2012-07-03 | Toyo Tanso Co., Ltd. | Tantalum carbide, method for producing tantalum carbide, tantalum carbide wiring and tantalum carbide electrode |
| US7056383B2 (en) | 2004-02-13 | 2006-06-06 | The Fox Group, Inc. | Tantalum based crucible |
| JP2006001787A (ja) * | 2004-06-17 | 2006-01-05 | Hitachi Chem Co Ltd | フッ化カルシウム結晶育成ルツボ、フッ化カルシウム結晶の製造方法及びフッ化カルシウム結晶 |
| JP2006273585A (ja) * | 2005-03-25 | 2006-10-12 | Ngk Insulators Ltd | 単結晶製造装置 |
| US8377204B2 (en) | 2006-06-16 | 2013-02-19 | Sumitomo Electric Industries, Ltd. | Group III nitride single crystal and method of its growth |
| US20090208749A1 (en) * | 2006-06-16 | 2009-08-20 | Sumitomo Electric Industries, Ltd. | Group III Nitride Single Crystal and Method of Its Growth |
| WO2007144955A1 (ja) * | 2006-06-16 | 2007-12-21 | Sumitomo Electric Industries, Ltd. | Ｉｉｉ族窒化物単結晶およびその成長方法 |
| JP2008163461A (ja) * | 2006-12-27 | 2008-07-17 | General Electric Co <Ge> | 高反応性合金の溶融時の炭素汚染低減方法 |
| US7790101B2 (en) * | 2006-12-27 | 2010-09-07 | General Electric Company | Articles for use with highly reactive alloys |
| US7582133B2 (en) * | 2006-12-27 | 2009-09-01 | General Electric Company | Methods for reducing carbon contamination when melting highly reactive alloys |
| JP2010126375A (ja) * | 2008-11-25 | 2010-06-10 | Sumitomo Electric Ind Ltd | 結晶製造方法 |
| US8535600B2 (en) | 2009-03-23 | 2013-09-17 | Kabushiki Kaisha Toyota Chuo Kenkyusho | High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive |
| EP2439308A4 (en) * | 2009-06-01 | 2017-01-04 | Toyo Tanso Co., Ltd. | Method for carburizing tantalum member, and tantalum member |
| JP2012117096A (ja) * | 2010-11-30 | 2012-06-21 | Toyo Tanso Kk | タンタル容器の浸炭処理方法 |
| JP2012052235A (ja) * | 2011-09-12 | 2012-03-15 | Toyo Tanso Kk | タンタルチューブとｐｉｔ炭素芯の製造方法、タンタルチューブとｐｉｔ炭素芯、タンタル炭化物配線の製造方法及びタンタル炭化物配線 |
| US8858697B2 (en) | 2011-10-28 | 2014-10-14 | General Electric Company | Mold compositions |
| CN103160928A (zh) * | 2011-12-13 | 2013-06-19 | 北京有色金属研究总院 | 一种生长高质量SiC单晶的籽晶处理方法 |
| US9011205B2 (en) | 2012-02-15 | 2015-04-21 | General Electric Company | Titanium aluminide article with improved surface finish |
| US9802243B2 (en) | 2012-02-29 | 2017-10-31 | General Electric Company | Methods for casting titanium and titanium aluminide alloys |
| US8932518B2 (en) | 2012-02-29 | 2015-01-13 | General Electric Company | Mold and facecoat compositions |
| JP2013193943A (ja) * | 2012-03-22 | 2013-09-30 | Toyota Central R&D Labs Inc | 高耐熱部材およびその製造方法 |
| JP2013201202A (ja) * | 2012-03-23 | 2013-10-03 | Epiquest:Kk | Ｋセル用るつぼ、ｋセル、およびｍｂｅ装置 |
| US8906292B2 (en) | 2012-07-27 | 2014-12-09 | General Electric Company | Crucible and facecoat compositions |
| JP2013014519A (ja) * | 2012-10-26 | 2013-01-24 | Sumitomo Electric Ind Ltd | 結晶製造方法 |
| US8992824B2 (en) | 2012-12-04 | 2015-03-31 | General Electric Company | Crucible and extrinsic facecoat compositions |
| US9803923B2 (en) | 2012-12-04 | 2017-10-31 | General Electric Company | Crucible and extrinsic facecoat compositions and methods for melting titanium and titanium aluminide alloys |
| US9592548B2 (en) | 2013-01-29 | 2017-03-14 | General Electric Company | Calcium hexaluminate-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| CN103060744A (zh) * | 2013-02-05 | 2013-04-24 | 中国电子科技集团公司第四十六研究所 | 一种超高温度下使用的复合型坩埚的制备方法 |
| US9192983B2 (en) | 2013-11-26 | 2015-11-24 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| US9511417B2 (en) | 2013-11-26 | 2016-12-06 | General Electric Company | Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys |
| US10391547B2 (en) | 2014-06-04 | 2019-08-27 | General Electric Company | Casting mold of grading with silicon carbide |
| CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
| CN108179470B (zh) * | 2017-12-29 | 2021-04-27 | 北京华进创威电子有限公司 | 一种低成本的氮化铝晶体生长方法 |
| CN108179470A (zh) * | 2017-12-29 | 2018-06-19 | 北京华进创威电子有限公司 | 一种低成本的氮化铝晶体生长方法 |
| TWI774929B (zh) * | 2018-03-08 | 2022-08-21 | 日商信越半導體股份有限公司 | 碳化矽單晶的製造方法 |
| CN111819311A (zh) * | 2018-03-08 | 2020-10-23 | 信越半导体株式会社 | 碳化硅单晶的制造方法 |
| JP2019156660A (ja) * | 2018-03-08 | 2019-09-19 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
| WO2019171901A1 (ja) * | 2018-03-08 | 2019-09-12 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
| US20200198980A1 (en) * | 2018-12-21 | 2020-06-25 | Showa Denko K.K. | Method of manufacturing tantalum carbide material |
| CN111348650A (zh) * | 2018-12-21 | 2020-06-30 | 昭和电工株式会社 | 碳化钽材的制造方法 |
| JP2020100530A (ja) * | 2018-12-21 | 2020-07-02 | 昭和電工株式会社 | 炭化タンタル材の製造方法 |
| US11027977B2 (en) | 2018-12-21 | 2021-06-08 | Showa Denko K.K. | Method of manufacturing tantalum carbide material |
| CN113088869A (zh) * | 2021-03-31 | 2021-07-09 | 哈尔滨化兴软控科技有限公司 | 一种碳化钽片的制备方法 |
| CN115261991A (zh) * | 2022-07-08 | 2022-11-01 | 江苏芯恒惟业电子科技有限公司 | 一种降低碳化硅单晶内部碳包裹体缺陷密度的方法 |
| CN115784778A (zh) * | 2022-11-21 | 2023-03-14 | 中材人工晶体研究院(山东)有限公司 | 一种含有碳化钽涂层的坩埚的制备方法 |
| CN115784778B (zh) * | 2022-11-21 | 2023-12-01 | 中材人工晶体研究院(山东)有限公司 | 一种含有碳化钽涂层的坩埚的制备方法 |
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