JPH10512399A - 半導体チップを少なくとも１つの接触面と電気的に接続する方法 - Google Patents

半導体チップを少なくとも１つの接触面と電気的に接続する方法

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Publication number
JPH10512399A
JPH10512399A JP9513061A JP51306197A JPH10512399A JP H10512399 A JPH10512399 A JP H10512399A JP 9513061 A JP9513061 A JP 9513061A JP 51306197 A JP51306197 A JP 51306197A JP H10512399 A JPH10512399 A JP H10512399A
Authority
JP
Japan
Prior art keywords
contact
semiconductor chip
contact surface
wedge
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9513061A
Other languages
English (en)
Inventor
ハイツアー、ヨーゼフ
キルシユバウエル、ヨーゼフ
シユタンプカ、ペーター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPH10512399A publication Critical patent/JPH10512399A/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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Abstract

(57)【要約】 半導体チップと少なくとも１つの接触面とを、その第１の端部が少なくとも１つの接触面と溶接されておりまたその第２の端部が半導体チップ（１）の接触フィールドと接続されている細線により接続する。金属線と半導体チップ（１）の接触フィールドとの間に良好な接続を形成するために線の第２の端部は、半導体チップ（１）の接触フィールド上に配設されこの接触フィールドと導電的に接続されているくさび形の金属片（５）と溶接されその際この金属片はその自由端がループに案内され、ネイルヘッドとウェッジ−接触により接続されているネイルヘッド−接触（６）により形成される。

Description

【発明の詳細な説明】 半導体チップを少なくとも１つの接触面と電気的に接続する方法 本発明は、半導体チップと少なくとも１つの接触面とを、その第１の端部が少 なくとも１つの接触面とまた第２の端部が半導体チップの接触フィールド上に配 設されこれに導電的に接続されている金属片と溶接されている細線により、電気 的に接続する方法に関する。 この種の方法は公知のやり方ではボンディングにより行われる。その場合少な くとも太さ約２４μｍの金線をキャピラリに通し、その先端に金線の一部を突出 させるのが一般的である。水素火炎又は火花放電により突出部分は溶解されて小 球、いわゆるボールに形づくられる。この小球はキャピラリにより第１の接触面 に押圧され、その際キャピラリの超音波範囲の振動により接触面と接合され、そ の際ネイルヘッドといわれる金線の形が形成される。いわゆる熱超音波ボンディ ングの場合接触面は付加的に約２００℃〜３００℃の温度に加熱される。その後 キャピラリは再び上方に移動され、弓型、いわゆるループとなり、第１の接触面 と接続すべき第２の接触面に案内される。そこでキャピラリは再び降下し、金線 を第２の接触面上で押潰してちぎる。比較的高い圧力により金線と第２の接触面 に良好な接合が形成され、その際ウェッジといわれるくさび形の構造が形成され る。この種のボンディングはアルミニウム線の場合に一般的であるウェッジ−ウ ェッジ−ボンディングに対してボール−ウェッジ−ボンディングといわれる。 半導体チップを接触面と接合する場合普通ボールは半導体チップと、またウェ ッジは接触面と接合される。それというのもボールの方が良好に配置可能であり 、その際に生じるネイルヘッドはウェッジよりも正確に画成された大きさを有す るからである。更にボール−オン−チップ法の場合半導体チップ上の構造を破壊 する危険性は極めて少ない。しかしこの措置の欠点はループが比較的大きくなる ことであるが、しかしこれは通常の半導体チップでは問題にならない。 例えばチップカードの場合、パッケージの高さはチップカードの厚さに相応す るものであるが、極めて小さくかつ予めはっきりと設定されている。そこに部品 、 例えば支持体が若干厚く形成されるならば、その付加的な所要面積は別の箇所で 再び削減しなければならない。 ドイツ連邦共和国特許出願公開第３６２１９１７号明細書から、金線をまず接 触面と、次いで半導体チップと接合することが公知である。この措置によりネイ ルヘッド−接触が接触面上に、またウェッジ−接触が半導体チップの接触フィー ルド上に来ることになるので、ループの高さは僅かである。もちろん線がチップ の接触フィールドに案内される浅い角度によりチップ面と短絡する危険性が生じ る。更に金とアルミニウムとの継合わせ部分の金成分（半導体チップの接触フィ ールドは一般にアルミニウムから成る）がネイルヘッド−接触の場合よりも明か に少なくなる。従って金は明らかに完全に脆化した金属間相に置換され、その結 果接触の溶解又は接触の分離を生じることになる。 欧州特許出願第０３９７４２６号明細書には、半導体チップの接触面にウェッ ジ−接触を装着する前にネイルヘッド−接触をこの接触面に施し、ウェッジ−接 触は初めてこのネイルヘッド−接触上にもたらされる装置が開示されている。そ れにより接合の信頼度が高められる。 ネイルヘッド−接触は従来の熱併用超音波ネイルヘッドによる接触化の場合と 同じ冶金学上の性質を供する。 チップ表面にボンド線を平面的に案内することにより、特に接触面がチップ表 面の内側部分にある場合、ボンド線が半導体チップのエッジと接触することにな り、短絡を招くことになりかねない。 日本国特開平６−９７３５０号（Ｅ−１５７４号公報、１９９４年７月６日、 第１８巻、第３５９号）明細書は半導体チップを、ボンド線を一層良好に案内す るためにくさび形の接触素子を有しておりその上にウェッジ−接触が施されてい るリードフレームと電気的に接合することが開示されている。しかしこのくさび 形の接触素子は、特殊な処理工程でリードフレーム上に設置しなければならない 経費をかけて製造される部品である。 従って本発明の課題は、簡単な取付け法でボンド線を適切に案内することを保 証して、半導体チップを少なくとも１つの接触面と電気的に接続する方法を提供 することにある。 この課題は本発明の請求項１に記載の方法により解決される。本発明の有利な 実施態様は従属請求項に記載されている。 その自由端がループに通されまたウェッジ−接触としてネイルヘッドと接続さ れているネイルヘッド−接触により形成されるくさび形の金属片により、半導体 チップを接触面と接合するボンド線のループは半導体チップの表面からチップの エッジ上に斜め上方に案内され、その結果エッジと接触状態になることはない。 本発明を図面を用いて実施例に基づき以下に詳述する。その際 図１はａ〜ｆの６つの連続した図面で本発明のくさび形の金属片を形成する個々 の工程を、 図２はａ〜ｄの４つの連続した図面で本発明による装置を製造する個々の処理工 程が示されている。 図１によれば直径約２４μｍの金線がキャピラリ４によりそれに対して予め備 えられている半導体チップ１上の接触フィールド上に案内される。キャピラリの 先端に金線の短時間の液化により球、いわゆるボールが形成される。矢印はキャ ピラリ４の移動方向を示している。図１ａではボールが接触フィールド上に押圧 され、ネイルヘッド６に形づくられている。それには例えば熱超音波法が使用さ れている。その後図１ｂ〜ｄに見られるようにキャピラリ４は金線と共に移動し てループとなり、自由端をネイルヘッド６上で押潰してちぎり、それによりルー プはくさび７に変形される。金線の端部はその後再びボールに溶解される。半導 体チップ１の接触フィールド上にこのようにしてネイルヘッド−接触６及び押圧 されたワイヤループ７から成るくさび形の金属片５が形成される。 図２はチップカードモジュールの切断片を示す。このようなチップカードモジ ュールはプラスチックカードの凹所に使用され、それによりチップカードが形成 される。エポキンガラスプレート３は片面に銅ラミネート２を備えられ、支持体 を形成する。支持体のエポキシガラスプレート３内に接触面用の穴が設けられて いる。チップ１はエポキシガラスプレート３上に接着されている。 図２ａでは金線が接触面上にキャピラリ４によりネイルヘッド−接触として形 成されている。その後図２ｂに見られるようにキャピラリ４は金線と共に再びチ ップ１へと移動し、チップ１の接触フィールド上のくさび形の金属片５上に載り 、 そこで金線を押圧してもぎ取る。その後キャピラリ４は図２ｃに見られるように 上方に運ばれる。最後に図２ｄでは半導体チップ表面の接触フィールド上にある ネイルヘッド−接触上に金線がウェッジ・ボンディングにより施され、キャピラ リ４の先端に既に新たにボールが形成されているのが見られる。図面によればネ イルヘッド−接触及びその上にもたらされて押圧された導体ループで形成されて いるくさび形の金属片により金線は半導体１を接触面と接続するために依然とし て半導体チップ表面にほぼ平行に案内され、その結果金線は僅かなループ高さと なるが、しかしチップ表面から僅かに上昇する金線の案内により金線がチップの エッジと接触する危険性は除かれる。 同様に極めて僅かなループ高さを形成することのできるアルミニウム−ウェッ ジ−ボンディング法と比べて、本発明方法は線を引っ張るための時間を著しく短 縮（約２分の１に）できる利点がある。 本発明による装置及び本発明方法はも当然チップカードモジュール用にも別構 成の支持体にもまた半導体デバイス用の別の変形パッケージにも同様に使用又は 利用できる。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 シユタンプカ、ペーター ドイツ連邦共和国 デー−92421 シユワ ンドルフ−クラールドルフ クラールドル フアー シユトラーセ 41アー

Claims (1)

  1. 【特許請求の範囲】 １． 以下の工程 −半導体チップ（１）の接触フィールド上にネイルヘッド接触を設置し、 −ネイルヘッド接触線の自由端をループ状に案内し、 −ループ状に案内された自由端をネイルヘッド−接触とウェッジ−接触によりく さび形の金属片（５）に接続し、 −細線の第１の先端を接触面にボンディングし、 −細線の第２の先端をくさび形金属片（５）にボンディングする により、その第１の端部が少なくとも１つの面とまた第２の端部が半導体チップ （１）の接触フィールド上に配設されこれに導電的に接続されている金属片（５ ）と溶接されている細線により、半導体チップ（１）を少なくとも１つの接触面 と電気的に接続する方法。 ２． 半導体チップ（１）及び少なくとも１つの接触面が共通の支持体（２、３ ）上に配置されていることを特徴とする請求項１記載の方法。 ３． 請求項１又は２記載の方法により製造されたチップカードモジュール。 ４． 請求項１又は２記載の方法により製造されたチップカード。
JP9513061A 1995-09-26 1996-09-19 半導体チップを少なくとも１つの接触面と電気的に接続する方法 Pending JPH10512399A (ja)

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DE19535775A DE19535775C2 (de) 1995-09-26 1995-09-26 Verfahren zum elektrischen Verbinden eines Kontaktfeldes eines Halbleiterchips mit zumindest einer Kontaktfläche sowie danach hergestellte Chipkarte
PCT/DE1996/001783 WO1997012394A1 (de) 1995-09-26 1996-09-19 Verfahren zum elektrischen verbinden eines halbleiterchips mit zumindest einer kontaktfläche

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JP2005294874A (ja) * 2005-07-06 2005-10-20 Nippon Steel Corp ワイヤをウェッジ接合した半導体装置及び金合金ボンディングワイヤ
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DE19535775A1 (de) 1997-03-27
KR19990063716A (ko) 1999-07-26
WO1997012394A1 (de) 1997-04-03
KR100377077B1 (ko) 2003-05-17
CN1197545A (zh) 1998-10-28
EP0852807A1 (de) 1998-07-15
ATE454712T1 (de) 2010-01-15

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