JPH10321913A - 窒化ガリウム系化合物半導体発光素子及びその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子及びその製造方法

Info

Publication number
JPH10321913A
JPH10321913A JP12845297A JP12845297A JPH10321913A JP H10321913 A JPH10321913 A JP H10321913A JP 12845297 A JP12845297 A JP 12845297A JP 12845297 A JP12845297 A JP 12845297A JP H10321913 A JPH10321913 A JP H10321913A
Authority
JP
Japan
Prior art keywords
gallium nitride
compound semiconductor
based compound
electrode
transparent conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12845297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10321913A5 (enExample
Inventor
Toshio Hata
俊雄 幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12845297A priority Critical patent/JPH10321913A/ja
Publication of JPH10321913A publication Critical patent/JPH10321913A/ja
Publication of JPH10321913A5 publication Critical patent/JPH10321913A5/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP12845297A 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法 Pending JPH10321913A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12845297A JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12845297A JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPH10321913A true JPH10321913A (ja) 1998-12-04
JPH10321913A5 JPH10321913A5 (enExample) 2005-03-17

Family

ID=14985068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12845297A Pending JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPH10321913A (enExample)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308383A (ja) * 2000-04-19 2001-11-02 Sharp Corp 窒化物系半導体発光素子
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
JP2002084001A (ja) * 2000-06-21 2002-03-22 Showa Denko Kk Ｉｉｉ族窒化物半導体発光ダイオード、発光ダイオードランプ、光源、ｉｉｉ族窒化物半導体発光ダイオード用電極およびその製造方法
JP2004158736A (ja) * 2002-11-08 2004-06-03 Hitachi Cable Ltd 発光素子
US6861270B2 (en) 2000-06-01 2005-03-01 Shiro Sakai Method for manufacturing gallium nitride compound semiconductor and light emitting element
US6884647B2 (en) 2000-09-22 2005-04-26 Shiro Sakai Method for roughening semiconductor surface
WO2005091384A1 (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Company, Limited 化合物半導体発光素子
WO2006011672A1 (en) * 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
WO2006011497A1 (ja) * 2004-07-30 2006-02-02 Fujikura Ltd. 発光素子及びその製造方法
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
US7015511B2 (en) 2001-06-29 2006-03-21 Nitride Semiconductors Co., Ltd. Gallium nitride-based light emitting device and method for manufacturing the same
JP2006086254A (ja) * 2004-09-15 2006-03-30 Kyocera Corp 発光素子およびその製造方法ならびにその発光素子を用いた照明装置
JP2006128631A (ja) * 2004-10-29 2006-05-18 Samsung Electro Mech Co Ltd 多層電極及びこれを備える化合物半導体の発光素子
JP2008010840A (ja) * 2006-05-29 2008-01-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2008210900A (ja) * 2007-02-24 2008-09-11 Nichia Chem Ind Ltd 半導体発光素子及びこれを備えた発光装置
US7615798B2 (en) 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
JP2009302589A (ja) * 2001-10-26 2009-12-24 Lg Electronics Inc 垂直構造ダイオードとその製造方法
JP2013065889A (ja) * 2004-07-23 2013-04-11 Samsung Electronics Co Ltd トップエミット型窒化物系発光素子
JP2018525822A (ja) * 2015-09-01 2018-09-06 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品の製造方法

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555847B2 (en) 2000-04-19 2003-04-29 Sharp Kabushiki Kaisha Nitride based semiconductor light emitting element
JP2001308383A (ja) * 2000-04-19 2001-11-02 Sharp Corp 窒化物系半導体発光素子
US6861270B2 (en) 2000-06-01 2005-03-01 Shiro Sakai Method for manufacturing gallium nitride compound semiconductor and light emitting element
JP2002084001A (ja) * 2000-06-21 2002-03-22 Showa Denko Kk Ｉｉｉ族窒化物半導体発光ダイオード、発光ダイオードランプ、光源、ｉｉｉ族窒化物半導体発光ダイオード用電極およびその製造方法
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
US6884647B2 (en) 2000-09-22 2005-04-26 Shiro Sakai Method for roughening semiconductor surface
US7015511B2 (en) 2001-06-29 2006-03-21 Nitride Semiconductors Co., Ltd. Gallium nitride-based light emitting device and method for manufacturing the same
US10326055B2 (en) 2001-10-26 2019-06-18 Lg Innotek Co., Ltd. Diode having vertical structure
JP2009302589A (ja) * 2001-10-26 2009-12-24 Lg Electronics Inc 垂直構造ダイオードとその製造方法
US10032959B2 (en) 2001-10-26 2018-07-24 Lg Innotek Co., Ltd. Diode having vertical structure
US9620677B2 (en) 2001-10-26 2017-04-11 Lg Innotek Co., Ltd. Diode having vertical structure
US9000468B2 (en) 2001-10-26 2015-04-07 Lg Innotek Co., Ltd. Diode having vertical structure
US8592846B2 (en) 2001-10-26 2013-11-26 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
JP2013102243A (ja) * 2001-10-26 2013-05-23 Lg Electronics Inc 垂直構造ダイオードとその製造方法
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP2004158736A (ja) * 2002-11-08 2004-06-03 Hitachi Cable Ltd 発光素子
WO2005091384A1 (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Company, Limited 化合物半導体発光素子
US7615798B2 (en) 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
JP2013065889A (ja) * 2004-07-23 2013-04-11 Samsung Electronics Co Ltd トップエミット型窒化物系発光素子
US8115212B2 (en) 2004-07-29 2012-02-14 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
WO2006011672A1 (en) * 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
US7683379B2 (en) 2004-07-30 2010-03-23 Fujikura Ltd. Light emitting element and manufacturing method thereof
WO2006011497A1 (ja) * 2004-07-30 2006-02-02 Fujikura Ltd. 発光素子及びその製造方法
JP2006086254A (ja) * 2004-09-15 2006-03-30 Kyocera Corp 発光素子およびその製造方法ならびにその発光素子を用いた照明装置
JP2006128631A (ja) * 2004-10-29 2006-05-18 Samsung Electro Mech Co Ltd 多層電極及びこれを備える化合物半導体の発光素子
JP2008010840A (ja) * 2006-05-29 2008-01-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2008210900A (ja) * 2007-02-24 2008-09-11 Nichia Chem Ind Ltd 半導体発光素子及びこれを備えた発光装置
JP2018525822A (ja) * 2015-09-01 2018-09-06 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品の製造方法
US10263155B2 (en) 2015-09-01 2019-04-16 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component

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