WO2005091384A1 - 化合物半導体発光素子 - Google Patents
化合物半導体発光素子 Download PDFInfo
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- WO2005091384A1 WO2005091384A1 PCT/JP2005/004878 JP2005004878W WO2005091384A1 WO 2005091384 A1 WO2005091384 A1 WO 2005091384A1 JP 2005004878 W JP2005004878 W JP 2005004878W WO 2005091384 A1 WO2005091384 A1 WO 2005091384A1
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000002310 reflectometry Methods 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 235000012149 noodles Nutrition 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 238
- 229910002601 GaN Inorganic materials 0.000 description 25
- 239000000758 substrate Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 238000000605 extraction Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 241000446313 Lamella Species 0.000 description 4
- 229910004261 CaF 2 Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910017768 LaF 3 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Definitions
- the present invention relates to a semi-light emitting device. More specifically, the present invention relates to a compound half having high luminous efficiency (main luminous eaves.
- a tin electrode of about 300 nm in thickness (hereinafter, referred to as “homogeneous electrode”) is formed as a homogenous electrode on the side of the light extraction surface. It is referred to as “IT o”). It is known that ITO has a higher level of strength and has higher conductivity than metals. (For example, Solid State Electronics 43 (1999). P.2081-4)
- An object of the present invention is to provide a compound semi-light emitting device having excellent efficiency (the present light emitting eaves.
- the present inventors have studied repeatedly to increase the light emitting efficiency of the compound semiconductor light emitting device, and have obtained the present invention. I came to.
- An ohmic electrode layer (0 provides a transparent conductive compound semiconductor light-emitting device.
- a light-emitting diode, a laser diode Such a compound semi-emissive is provided.
- FIG. 1 shows a difficult form of the diode of the present invention.
- FIG. 2 shows one embodiment of the diode of the present invention having two transparent thin films.
- FIG. 3 shows another ⁇ St configuration of the diode of the present invention.
- FIG. 4 shows another embodiment of the die of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
- the compound half of the present invention (this device includes a reflectance reducing layer, an ohmic electrode layer ⁇ , m, and an ohmic electrode layer (ii) in this order.
- This device includes a reflectance reducing layer, an ohmic electrode layer ⁇ , m, and an ohmic electrode layer (ii) in this order.
- the interface between the ohmic electrode layer ⁇ and the reflectivity reducing layer, and the reflectivity reducing layer and the external sound for example, at the interface of the sky, the reflection is reduced, so that the light from the layer is applied to the atomic Sfi layer ⁇ , the reflection is reduced and the light is emitted to the outside with high efficiency.
- the reflectivity reduction layer reduces the reflection of light from the layer on the light emitting surface side of the homogenous electrode layer (i). Anything can be used as long as it can be used.
- the reflectivity reduction layer reduces the reflection of light
- the ohmic electrode layer preferably has a refractive index smaller than the refractive index of the metal oxide of 0.
- the refractive index of ITO is about 2.0 Therefore, the refractive index reduction layer preferably has a refractive index of about 2.0 or less, while the reflectivity reduction layer preferably has a higher refractive index than the refractive index with external sound.
- the reduced layer preferably has a refractive index of about 1.0 or more.
- a fourth resin, reflectivity reducing layer preferably refraction index is about 1.4 or more such reflectivity reducing layer, for example, Sn 0 2, (refractive index:. 1.9, hereinafter the same.), Mg_ ⁇ (1. 8), NdF 3 ( 1. 61), L aF 3 (1. 59), S i0 2, consisting of (1. 46), CaF 2 ( 1. 24).
- the reflectance reducing layer includes a layer made of a classic compound (hereinafter, referred to as “transparency”), and preferably includes at least two transparent layers.
- a compound semiconductor light-emitting device containing a transparent thin Ml with a thickness of mZ4 which emits light
- the light that travels in the direction from the light-emitting layer to the outside sound is emitted, and the light that is emitted from the general layer is transparent and thin.
- the light reflected at the interface of the electrode layer ⁇ interferes with the reflected light and reduces the reflected light.
- the reflectance-reducing layer satisfies one of the following conditions 1, conditions 2— (1) to 2 — (3).
- Condition 1 reflectance reduction layer consists of one transparent thin ⁇ 1:! ⁇
- the d tl is the refractive index and thickness of the transparent thin II, n, is refraction index and thickness of the Omikku electrode (i), ns is the layers, O one electrochromic electrode (i) the side of the The refractive index of the outermost layer (for example, Among the layers, the refractive index of the ohmic electrode layer (if the 0-side layer is gallium nitride, ns is 2.4), the refractive index of n0 « ⁇ (for example, air, shelf), ⁇ is Wavelength. ]
- the refractive index of the transparent thin film layer may be, for example, about 1.8 to 2.0.
- Compounds having such a refractive index is, for example, Sn_ ⁇ 2, MgO.
- the age at which the ohmic electrode layer (i) is ITO and the outer layer is air, and the refractive index of the transparent thin layer may be, for example, about 1.4 to 1.6.
- Compounds having such a refractive index are, for example, Si 2 and CaF 2 .
- n tl / n t2 no / v (ns' nO) —
- n tl d tl A / / 4
- n t2d t2 A / 4
- N t have d tl, the refractive index and thickness of the transparent thin film layer A adjacent to Omikku electrode (i) of the two transparent thin layer, n t2, d t2, the refractive index of the rest of the transparent thin layer B And thickness, n. Wc and d ohnic are the refractive index and thickness of the ohmic electrode layer (i), and ns is the refractive index of the light emitting layer on the ohmic electrode (i) side: the refractive index of the layer, the refractive index of ⁇ sound, and ⁇ is ⁇ skin length.
- the ohmic electrode layer (0 is ITO, and the outer layer is resin)
- the refractive index of the transparent thin film A of the reflectance reducing layer is about 1.45 to 1.65, and the transparent thin film is refractive index of the layer B is approximately 1.4 to 1. it may be a 6.
- examples of such reflectivity reducing layer is a transparent thin is LaF 3, is in S I_ ⁇ second transparent thin transliteration B
- the refractive index of the transparent thin film layer A is about 1.8 to 2.0.
- l! B has a refractive index of about 1.4 to 1.6 Is also good.
- Examples of such reflectivity reducing layer, a transparent thin transliteration A is Sn0 2, the transparent thin ⁇ are mentioned those in which S I_ ⁇ 2.
- the ohmic electrode layer ⁇ is ITO, and the external sound is resin. May be about 1.7 to 1.9.
- a transparent thin transliteration A is S N_ ⁇ 2 include those transparent thin noodles B is MgO.
- the ohmic electrode layer (D is ITO, and the external force is air:! ⁇
- Transparent thin JMA has a refractive index of about 1.45 ⁇ : L.65
- transparent thin refractive index may be about 1.1 to 1.3.
- the transparent thin transliteration a is is a La F 3
- the transparent thin transliteration B is C a F 2 Condition 2— (3) (The reflectivity reduction layer is composed of two transparent thin layers ⁇ )
- n t2 no ⁇ ( ⁇ ⁇ ns /
- n 0 i TM c- ⁇ ⁇ ⁇ / or 3 ⁇ 4 [ Ntl , nt2 , n. Wc, n0, ns, d t have d t2, d, ⁇ shows the same meaning as the conditions 2- (1). ]
- the refractive index of the transparent thin film is not particularly improved.
- the refractive index of the transparent thin film layer B may be about 1.5 to 1.7 when the ohmic electrode layer (D is ITO and the outer member is lining resin).
- Such transparent transflection B is, for example, LaF 3 or NdF 3.
- the translucent transflection B is used.
- the refractive index of B may be about 1.2 to 1.4.
- Such a transparent thin knit B for example, CaF 2.
- the ohmic electrode layer (i) is transparent to light emitted from the layer and has electrical conductivity.
- the main component of the ohmic ®® layer (i) is a metal oxide such as indium oxide ( ⁇ 2 ), tin oxide (SnO 2 ), and t «(ZnO), preferably this metal oxide. material obtained by adding another element to the object, for example, tin de one flop indium oxide (IT O), antimony Sn_ ⁇ 2 doped with (Sb), fluorine (F) a de one up the Sn0 2, aluminum ( A1) -doped ZnO, indium (In) -doped Zn ⁇ , and gallium (Ga) -doped ZnO, more preferably ITO.
- the optical thickness (two thicknesses X refractive index) of the ohmic electrode layer (i) is m / 4 (hiding mtt! E) of the emission wavelength.
- Emitting layer The layer is composed of half a compound. For example, In x G ai _ x N, G aN, Further, the light emitting layer may have a multiple quantum well structure.
- the compound semi-element of the present invention preferably has a (tunneling) contact layer between the light emitting layer and the ohmic electrode (i).
- the ohmic electrode layer (ii) is only required to have electrical conductivity.
- a metal oxide such as the above-mentioned indium oxide (In 2 ), tin oxide (SnO 2 ), and mi (ZnO) Or a material made of a metal such as titanium (Ti) or aluminum (A1).
- FIG. 1 shows a Wei diode in which a sapphire group is formed with a layer composed of half f compounds.
- This light-emitting diode is formed by laminating a tunneling contact layer (hereinafter, referred to as a CTL layer) and a transparent thin film layer on a p-GaN layer, and the light emitted from the light-emitting layer (nitride semiconductor layer) is p-GaN. -Efficient emission from the GaN layer side.
- a tunneling contact layer hereinafter, referred to as a CTL layer
- a transparent thin film layer on a p-GaN layer
- the light-emitting diode 10 has, on a sapphire substrate 1, a 0 &? ⁇ ⁇ & ⁇ buffer layer 2 and a compound half # (the main layer 3 in this order.
- the compound half main layer 3 is grown by, for example, an organic metal growth method.
- the active layer comprises a nitride-based semiconductor having a light-emitting diode structure, and more specifically, constitutes an active layer.
- Mg de one flop p-GaN layer 37 M QW layer 34 is.
- layer comprising and CTL layer 38 is and one-flop G a n layer and the I n G a n
- the layers are alternately stacked five times
- the CTL layer 38 is formed by alternately stacking a Si-doped n-GaN layer and a Si-doped p-type InGaN layer five times.
- the hole 3 ⁇ 4 ⁇ uniform electrode layer 4 is made of ITO, and is formed on the CTL layer 38.
- the home electrode layer 4 is formed on the entire surface of the CTL layer 38 by an electron beam evaporation method.
- a transparent thin film 5 and an electrode 7 are formed on the hollow electrode layer 4, and an electrode 6 is formed on the single GaN layer 31.
- the CTL layer 38 is a layer for extracting light emitted from the nitride half-layer 3, and the surface 38 A of the CTL layer 38 on the hole injection ohmic electrode layer 4 side is a light extraction surface.
- the reflectivity reduction layer preferably includes at least two transparent thin layers B.
- FIG. 2 shows the layer structure of such a reflectance reducing layer.
- the refractive index and thickness of the ohmic electrode 41 are n te
- the refractive index and thickness of the transparent thin film 51 adjacent to the ohmic electrode 41 are n tl , d tl , and the transparent electrode not adjacent to the thin electrode 41.
- the refractive index and thickness of the thin film 52 are denoted by n t2 and d t2
- the refractive index of the portion of the compound semi-layer 3 at the outermost layer on the side of the homogeneous electrode 41 is denoted by ns.
- FIG. 3 shows a light emitting diode in which a layer made of half a compound is noble layer on a conductive substrate 21.
- the numbers in FIG. 3 are the same if they are the same in FIG. 3 includes a conductive substrate 21, a light reflection layer 22, and an n + -GaN layer 31.
- the light reflection layer 22 has a layer structure of an electron SAffl electrode layer 22202 composed of a transparent conductive film and a female Z reflection layer 221 having a reflection and reflection function.
- the adhesion / reflection layer 221 is adjacent to the conductive substrate 21, and the electron 3 ⁇ 4 ⁇ uniform electrode layer 222 is adjacent to the ⁇ + — G a ⁇ layer 31.
- diode 20 includes a heat sink 23 mm 24.
- the diode 20 According to the diode 20, light having a dimension measured from the compound semi-layer 3 toward the conductive substrate 21 is reflected by the light reflection layer 22 (the electron electrode & lambda. Since it can be extracted to the light extraction surface side (via the main layer 3, the hall (via the Affl-Ommic viewing layer 4, the transparent transflection layer 5)), it has a higher efficiency than the light-emitting diode 10 which is difficult.
- the light emitting diode 30 shown in FIG. 4 is for extracting light from the n-type layer side, and is different from the diode 20 for extracting light from the p-type layer.
- the compound half of the light-emitting diode 30 (the main layer 3 is the reverse of the compound half-layer 3 of the diode 20 and the stacked II layer.
- the diode 30 has a high luminous efficiency like the Wei Diode 20).
- the diode shown in Fig. 4 was manufactured as follows.
- a nitride of a diode type which corresponds to the GaN buffer layer 2 and the half-f layer 3 in FIG.
- the semi-crystal of this system was formed by metalorganic eye growth. That is, on the sapphire substrate 1, the GaN
- Si-doped n- GaN layer 32 (impurity: 2X10 18 , thickness: 3 m),
- Undoped GaN layer 33 (layer thickness: 300 nm),
- An MQW layer 34 in which five GaN layers (0 nm: 15 nm) and 5 nm InGaN layers (3 nm) are alternately stacked,
- the wavelength of light emitted from the light emitting layer by the current ⁇ ⁇ was adjusted to 470 nm by adjusting the In fiber of the InGaN layer serving as the active layer.
- a transparent conductive hole injection layer 4 a 1-layer layer having a thickness of 59 nm was formed on the entire surface of the 1 ⁇ layer 38 by an electron beam evaporation method.
- an A 1 layer which is a homogenous electrode for the Si substrate 0 ⁇ : 200 nm) and an Au layer used as an adhesive layer 0 : 500 nm, not shown) and processed at 350 ° C for 30 minutes.
- the sapphire of the laminate was ironed by a lapping device and a lapping device, the thickness of the sapphire substrate was set to 20 zm, and then the sapphire was completely ironed using an ICP etching device.
- the buffer layer 2 was
- ⁇ 2 [TO layer and layer structure of transparent lamella II (for air) with thickness ⁇ , 4]
- an ITO layer with a thickness of 118 nm is formed on the entire surface of the severe Si-doped n-type high GaN layer by electron beam evaporation and patterned by photolithography.
- a SiO 2 layer having a thickness of 80 nm was formed on the ITO layer (excluding the extraction electrode portion) to produce LED ⁇ : ⁇ 8.
- An ITO layer with a thickness of 59 nm was entirely formed on one of the divided pieces by electron beam evaporation, and a 62-nm-thick layer (excluding the extraction electrode) was formed on the ITO layer. Except the S n0 two layers, that the formation of the S I_ ⁇ two layers of thickness 8 0 nm in this order to prepare a L ED wafer in the same manner as in example 1. Difficult case 3
- an IT ⁇ transparent electrode was formed, and a 10Z100nm TiAl layer was deposited on the Si-doped n-type high-concentration GaN layer, which was the surface, to form a mesh pattern.
- an LED wafer was manufactured in the same manner as in Example 1 except that an ohmic electrode was formed by annealing at 700 ° C. in N 2 .
- the light output of the LED of Comparative Example 2 is 1.00.
- Table 1 shows the average values of the light output at 20 mA of the LEDs obtained in Male Examples 1 to 5 and Comparative Tree 1. As shown in Table 1, (1) the light output of the LED of the first example is approximately 25 to 50% higher than that of the LED of the comparative example (2), and the emission rate is excellent.
- Example 5
- an ITO layer with a thickness of 118 nm was formed by electron beam evaporation on the entire surface on the top surface of the Si-doped n-type high-density GaN layer. , after pattern-learning by photolithography to form an S n 0 2 layer I on the tO layer (except the extraction electrode unit) thickness 6 2 nm.
- the fabricated LED epitaxial substrate was separated into chips by scribing and breaking, and the LED chip was bonded to the lead, and then resin was applied to produce the LED.
- Example 7 One of the split pieces to form the I TO layer having a thickness of 5 9 nm, except for the electrode portions to ⁇ on the I TO layer) thickness of 7 4 nm of L a F 3-layer and thickness 8 0 An LED was fabricated in the same manner as in Example 5, except that the Si 2 nm layers were formed in this order.
- Example 7
- the light output of the LED in comparison row 3 is 1.00.
- Table 2 shows the average (relative value) of the light output at 20 mA of the LEDs obtained in Examples 6 to 10 and Comparative! 13. As shown in Table 2, the light output of the example LED is about 40 to 50% higher than that of the comparative example 3 and has excellent luminous efficiency.
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Description
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Application Number | Priority Date | Filing Date | Title |
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JP2004080415A JP2005268601A (ja) | 2004-03-19 | 2004-03-19 | 化合物半導体発光素子 |
JP2004-080415 | 2004-03-19 |
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PCT/JP2005/004878 WO2005091384A1 (ja) | 2004-03-19 | 2005-03-14 | 化合物半導体発光素子 |
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JP (1) | JP2005268601A (ja) |
TW (1) | TW200536158A (ja) |
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DE102004021233A1 (de) * | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
JP4367393B2 (ja) | 2005-09-30 | 2009-11-18 | 日立電線株式会社 | 透明導電膜を備えた半導体発光素子 |
US7569866B2 (en) | 2005-09-30 | 2009-08-04 | Hitachi Cable, Ltd. | Semiconductor light-emitting device |
JP2007103689A (ja) * | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
US8101961B2 (en) * | 2006-01-25 | 2012-01-24 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with growth substrates |
DE102006015788A1 (de) | 2006-01-27 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
EP1821347B1 (en) * | 2006-02-16 | 2018-01-03 | LG Electronics Inc. | Light emitting device having vertical structure and method for manufacturing the same |
US7687811B2 (en) * | 2006-03-21 | 2010-03-30 | Lg Electronics Inc. | Vertical light emitting device having a photonic crystal structure |
JP2007294878A (ja) * | 2006-03-31 | 2007-11-08 | Fujifilm Corp | 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置 |
DE102006057747B4 (de) * | 2006-09-27 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper |
JP5116291B2 (ja) * | 2006-11-22 | 2013-01-09 | 京セラ株式会社 | 発光素子及び照明装置 |
JP5148885B2 (ja) | 2007-01-30 | 2013-02-20 | シャープ株式会社 | 窒化物半導体発光素子 |
US9484499B2 (en) | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
DE102007032555A1 (de) * | 2007-07-12 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
KR101215299B1 (ko) * | 2010-12-30 | 2012-12-26 | 포항공과대학교 산학협력단 | 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 |
KR101233768B1 (ko) * | 2010-12-30 | 2013-02-15 | 포항공과대학교 산학협력단 | 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 |
JP2014170815A (ja) * | 2013-03-01 | 2014-09-18 | Ushio Inc | Led素子 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993023883A1 (en) * | 1992-05-12 | 1993-11-25 | North Carolina State University | Integrated heterostructure of group ii-vi semiconductor materials including epitaxial ohmic contact and method of fabricating same |
WO1997048138A2 (en) * | 1996-06-11 | 1997-12-18 | Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
JPH10321913A (ja) * | 1997-05-19 | 1998-12-04 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
JP2003051610A (ja) * | 2001-08-03 | 2003-02-21 | Nichia Chem Ind Ltd | Led素子 |
US20030141604A1 (en) * | 2002-01-31 | 2003-07-31 | Dominik Eisert | Radiation-emitting semiconductor component |
JP2003332618A (ja) * | 2002-05-10 | 2003-11-21 | Mitsubishi Cable Ind Ltd | 半導体発光素子 |
-
2004
- 2004-03-19 JP JP2004080415A patent/JP2005268601A/ja active Pending
-
2005
- 2005-03-14 WO PCT/JP2005/004878 patent/WO2005091384A1/ja active Application Filing
- 2005-03-15 TW TW94107896A patent/TW200536158A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993023883A1 (en) * | 1992-05-12 | 1993-11-25 | North Carolina State University | Integrated heterostructure of group ii-vi semiconductor materials including epitaxial ohmic contact and method of fabricating same |
WO1997048138A2 (en) * | 1996-06-11 | 1997-12-18 | Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
JPH10321913A (ja) * | 1997-05-19 | 1998-12-04 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
JP2003051610A (ja) * | 2001-08-03 | 2003-02-21 | Nichia Chem Ind Ltd | Led素子 |
US20030141604A1 (en) * | 2002-01-31 | 2003-07-31 | Dominik Eisert | Radiation-emitting semiconductor component |
JP2003332618A (ja) * | 2002-05-10 | 2003-11-21 | Mitsubishi Cable Ind Ltd | 半導体発光素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535026B2 (en) | 2005-09-30 | 2009-05-19 | Hitachi Cable, Ltd. | Semiconductor light-emitting device with high brightness and low operating voltage |
CN106098878A (zh) * | 2016-06-28 | 2016-11-09 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
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JP2005268601A (ja) | 2005-09-29 |
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