JPH10321913A5 - - Google Patents

Info

Publication number
JPH10321913A5
JPH10321913A5 JP1997128452A JP12845297A JPH10321913A5 JP H10321913 A5 JPH10321913 A5 JP H10321913A5 JP 1997128452 A JP1997128452 A JP 1997128452A JP 12845297 A JP12845297 A JP 12845297A JP H10321913 A5 JPH10321913 A5 JP H10321913A5
Authority
JP
Japan
Prior art keywords
gallium nitride
nitride compound
compound semiconductor
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997128452A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10321913A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP12845297A priority Critical patent/JPH10321913A/ja
Priority claimed from JP12845297A external-priority patent/JPH10321913A/ja
Publication of JPH10321913A publication Critical patent/JPH10321913A/ja
Publication of JPH10321913A5 publication Critical patent/JPH10321913A5/ja
Pending legal-status Critical Current

Links

JP12845297A 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法 Pending JPH10321913A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12845297A JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12845297A JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPH10321913A JPH10321913A (ja) 1998-12-04
JPH10321913A5 true JPH10321913A5 (enExample) 2005-03-17

Family

ID=14985068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12845297A Pending JPH10321913A (ja) 1997-05-19 1997-05-19 窒化ガリウム系化合物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPH10321913A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4493153B2 (ja) * 2000-04-19 2010-06-30 シャープ株式会社 窒化物系半導体発光素子
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP4754711B2 (ja) * 2000-06-21 2011-08-24 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光ダイオード、発光ダイオードランプ、光源、ｉｉｉ族窒化物半導体発光ダイオード用電極およびその製造方法
US6344665B1 (en) * 2000-06-23 2002-02-05 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
US7148520B2 (en) * 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP2004158736A (ja) * 2002-11-08 2004-06-03 Hitachi Cable Ltd 発光素子
JP2005268601A (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Co Ltd 化合物半導体発光素子
US7615798B2 (en) 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
US7880176B2 (en) * 2004-07-23 2011-02-01 Samsung Led Co., Ltd. Top-emitting light emitting diodes and methods of manufacturing thereof
WO2006011672A1 (en) * 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
EP1780806A4 (en) 2004-07-30 2009-07-29 Fujikura Ltd LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
JP4817629B2 (ja) * 2004-09-15 2011-11-16 京セラ株式会社 発光素子およびその発光素子を用いた照明装置
KR100682870B1 (ko) * 2004-10-29 2007-02-15 삼성전기주식회사 다층전극 및 이를 구비하는 화합물 반도체 발광소자
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
JP5040355B2 (ja) * 2007-02-24 2012-10-03 日亜化学工業株式会社 半導体発光素子及びこれを備えた発光装置
DE102015114590B4 (de) * 2015-09-01 2020-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils

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