JPH10321871A - Ｓｏｉ構造を持つ半導体装置及びその製造方法 - Google Patents
Ｓｏｉ構造を持つ半導体装置及びその製造方法Info
- Publication number
- JPH10321871A JPH10321871A JP10126555A JP12655598A JPH10321871A JP H10321871 A JPH10321871 A JP H10321871A JP 10126555 A JP10126555 A JP 10126555A JP 12655598 A JP12655598 A JP 12655598A JP H10321871 A JPH10321871 A JP H10321871A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- layer
- implantation
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000012535 impurity Substances 0.000 claims abstract description 76
- 150000002500 ions Chemical class 0.000 claims abstract description 23
- 238000002513 implantation Methods 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR97-18022 | 1997-05-09 | ||
| KR1019970018022A KR100223483B1 (ko) | 1997-05-09 | 1997-05-09 | Soi 모오스 트랜지스터 소자 및 그의 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10321871A true JPH10321871A (ja) | 1998-12-04 |
Family
ID=19505409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10126555A Pending JPH10321871A (ja) | 1997-05-09 | 1998-05-11 | Ｓｏｉ構造を持つ半導体装置及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH10321871A (zh) |
| KR (1) | KR100223483B1 (zh) |
| CN (1) | CN1147002C (zh) |
| TW (1) | TW373338B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013021084A (ja) * | 2011-07-08 | 2013-01-31 | Ricoh Co Ltd | 半導体装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4193097B2 (ja) * | 2002-02-18 | 2008-12-10 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP2004072063A (ja) * | 2002-06-10 | 2004-03-04 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| US7893475B2 (en) * | 2007-01-24 | 2011-02-22 | Macronix International Co., Ltd. | Dynamic random access memory cell and manufacturing method thereof |
| CN108878458B (zh) * | 2018-07-05 | 2021-11-12 | 北京工业大学 | Soi基单片横向集成phemt和mosfet的外延结构及制备方法 |
-
1997
- 1997-05-09 KR KR1019970018022A patent/KR100223483B1/ko not_active IP Right Cessation
-
1998
- 1998-04-29 TW TW087106580A patent/TW373338B/zh not_active IP Right Cessation
- 1998-05-09 CN CNB981149596A patent/CN1147002C/zh not_active Expired - Fee Related
- 1998-05-11 JP JP10126555A patent/JPH10321871A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013021084A (ja) * | 2011-07-08 | 2013-01-31 | Ricoh Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100223483B1 (ko) | 1999-10-15 |
| KR19980082916A (ko) | 1998-12-05 |
| CN1204158A (zh) | 1999-01-06 |
| CN1147002C (zh) | 2004-04-21 |
| TW373338B (en) | 1999-11-01 |
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