JPH10319595A5 - - Google Patents
Info
- Publication number
- JPH10319595A5 JPH10319595A5 JP1997130131A JP13013197A JPH10319595A5 JP H10319595 A5 JPH10319595 A5 JP H10319595A5 JP 1997130131 A JP1997130131 A JP 1997130131A JP 13013197 A JP13013197 A JP 13013197A JP H10319595 A5 JPH10319595 A5 JP H10319595A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- monomer unit
- resist composition
- composition according
- protecting group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13013197A JP3819531B2 (ja) | 1997-05-20 | 1997-05-20 | レジスト組成物及びレジストパターン形成方法 |
| TW087106189A TW565739B (en) | 1997-05-20 | 1998-04-22 | Resist composition suitable for short wavelength exposure and resist pattern forming method |
| TW092126682A TWI229782B (en) | 1997-05-20 | 1998-04-22 | Resist composition suitable for short wavelength exposure and resist pattern forming method |
| KR1019980017364A KR100301354B1 (ko) | 1997-05-20 | 1998-05-14 | 레지스트조성물및레지스트패턴형성방법 |
| US09/080,530 US6656659B1 (en) | 1997-05-20 | 1998-05-18 | Resist composition suitable for short wavelength exposure and resist pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13013197A JP3819531B2 (ja) | 1997-05-20 | 1997-05-20 | レジスト組成物及びレジストパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10319595A JPH10319595A (ja) | 1998-12-04 |
| JPH10319595A5 true JPH10319595A5 (cg-RX-API-DMAC10.html) | 2005-01-20 |
| JP3819531B2 JP3819531B2 (ja) | 2006-09-13 |
Family
ID=15026701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13013197A Expired - Lifetime JP3819531B2 (ja) | 1997-05-20 | 1997-05-20 | レジスト組成物及びレジストパターン形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6656659B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP3819531B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR100301354B1 (cg-RX-API-DMAC10.html) |
| TW (2) | TWI229782B (cg-RX-API-DMAC10.html) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000056355A (ko) * | 1999-02-19 | 2000-09-15 | 김영환 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
| EP1041442B1 (en) | 1999-03-31 | 2004-10-27 | Sumitomo Chemical Company, Limited | Chemical amplification type positive resist |
| US6479211B1 (en) * | 1999-05-26 | 2002-11-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
| KR100533361B1 (ko) * | 1999-08-23 | 2005-12-06 | 주식회사 하이닉스반도체 | 유기 난반사 방지막 중합체 및 그의 제조방법 |
| KR100729679B1 (ko) * | 1999-11-02 | 2007-06-18 | 가부시끼가이샤 도시바 | 포토레지스트용 고분자 화합물 및 포토레지스트용 수지조성물 |
| JP4282185B2 (ja) | 1999-11-02 | 2009-06-17 | 株式会社東芝 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
| JP2001215704A (ja) | 2000-01-31 | 2001-08-10 | Sumitomo Chem Co Ltd | 化学増幅型ポジ型レジスト組成物 |
| US6406828B1 (en) * | 2000-02-24 | 2002-06-18 | Shipley Company, L.L.C. | Polymer and photoresist compositions |
| JP4576737B2 (ja) | 2000-06-09 | 2010-11-10 | Jsr株式会社 | 感放射線性樹脂組成物 |
| KR100360412B1 (ko) * | 2000-07-11 | 2002-11-13 | 삼성전자 주식회사 | 백본에 락톤이 포함된 감광성 폴리머로 이루어지는레지스트 조성물 |
| JP4441104B2 (ja) | 2000-11-27 | 2010-03-31 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP3945741B2 (ja) | 2000-12-04 | 2007-07-18 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| TWI291953B (cg-RX-API-DMAC10.html) | 2001-10-23 | 2008-01-01 | Mitsubishi Rayon Co | |
| JP3895224B2 (ja) | 2001-12-03 | 2007-03-22 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
| JP4881002B2 (ja) | 2003-01-31 | 2012-02-22 | 三菱レイヨン株式会社 | レジスト用重合体およびレジスト組成物 |
| JP4772288B2 (ja) | 2003-06-05 | 2011-09-14 | 東京応化工業株式会社 | ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法 |
| JP2005031233A (ja) | 2003-07-09 | 2005-02-03 | Tokyo Ohka Kogyo Co Ltd | レジスト組成物、積層体、及びレジストパターン形成方法 |
| TWI300165B (en) * | 2003-08-13 | 2008-08-21 | Tokyo Ohka Kogyo Co Ltd | Resin for resist, positive resist composition and resist pattern formation method |
| JP4188265B2 (ja) | 2003-10-23 | 2008-11-26 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP2005164633A (ja) * | 2003-11-28 | 2005-06-23 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
| US7494759B2 (en) * | 2004-05-31 | 2009-02-24 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist compositions and process for the formation of resist patterns with the same |
| TWI291473B (en) | 2004-06-08 | 2007-12-21 | Tokyo Ohka Kogyo Co Ltd | Polymer, positive resist composition, and method for forming resist pattern |
| JP2006003781A (ja) * | 2004-06-21 | 2006-01-05 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
| US8476401B2 (en) | 2004-09-10 | 2013-07-02 | Mitsubishi Rayon Co., Ltd. | Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon |
| DE102004047249A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Lithographieverfahren zur Herstellung hochaufgelöster Fotoresiststrukturen |
| KR101646813B1 (ko) | 2009-03-03 | 2016-08-08 | 미츠비시 가스 가가쿠 가부시키가이샤 | 아다만탄 유도체, 그의 제조방법 및 그것을 원료로 하는 중합체, 및 수지 조성물 |
| JP5845578B2 (ja) | 2009-07-07 | 2016-01-20 | 三菱レイヨン株式会社 | リソグラフィー用共重合体の評価方法 |
| CN102471387B (zh) | 2009-07-07 | 2014-10-08 | 三菱丽阳株式会社 | 聚合物的制造方法、光刻用聚合物、抗蚀剂组合物以及基板的制造方法 |
| KR101738480B1 (ko) * | 2009-07-30 | 2017-05-23 | 주식회사 동진쎄미켐 | 자가정렬 이중 패턴 형성용 포토레지스트 조성물 |
| WO2011086933A1 (ja) | 2010-01-14 | 2011-07-21 | 三菱瓦斯化学株式会社 | ビシクロヘキサン誘導体化合物及びその製造方法 |
| JP5660483B2 (ja) * | 2010-03-12 | 2015-01-28 | 国立大学法人東北大学 | レジスト用重合体組成物、レジスト組成物、およびパターンが形成された基板の製造方法 |
| US9477151B2 (en) | 2013-04-23 | 2016-10-25 | Mitsubishi Gas Chemical Company, Inc. | Alicyclic ester compound, and (meth)acrylic copolymer and photosensitive resin composition containing same |
| JP6287552B2 (ja) | 2013-06-14 | 2018-03-07 | 三菱ケミカル株式会社 | レジスト用共重合体、およびレジスト用組成物 |
| WO2015115613A1 (ja) | 2014-01-31 | 2015-08-06 | 三菱瓦斯化学株式会社 | (メタ)アクリレート化合物、(メタ)アクリル共重合体およびそれを含む感光性樹脂組成物 |
| KR20160122691A (ko) | 2014-02-14 | 2016-10-24 | 미츠비시 가스 가가쿠 가부시키가이샤 | 신규 지환식 에스테르 화합물의 제조 방법, 신규 지환식 에스테르 화합물, 그것을 중합한 (메트)아크릴 공중합체, 및 그것을 포함하는 감광성 수지 조성물 |
| KR20160122117A (ko) | 2014-02-14 | 2016-10-21 | 미츠비시 가스 가가쿠 가부시키가이샤 | (메트)아크릴산에스테르 화합물 및 그 제조 방법 |
| KR102729938B1 (ko) * | 2020-04-01 | 2024-11-13 | 가부시키가이샤 닛폰 쇼쿠바이 | N-치환 말레이미드계 중합체, 및 그 제조 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3297272B2 (ja) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
| KR100206664B1 (ko) * | 1995-06-28 | 1999-07-01 | 세키사와 다다시 | 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법 |
| JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
-
1997
- 1997-05-20 JP JP13013197A patent/JP3819531B2/ja not_active Expired - Lifetime
-
1998
- 1998-04-22 TW TW092126682A patent/TWI229782B/zh not_active IP Right Cessation
- 1998-04-22 TW TW087106189A patent/TW565739B/zh not_active IP Right Cessation
- 1998-05-14 KR KR1019980017364A patent/KR100301354B1/ko not_active Expired - Lifetime
- 1998-05-18 US US09/080,530 patent/US6656659B1/en not_active Expired - Lifetime
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