JPH10209465A5 - - Google Patents

Info

Publication number
JPH10209465A5
JPH10209465A5 JP1997022077A JP2207797A JPH10209465A5 JP H10209465 A5 JPH10209465 A5 JP H10209465A5 JP 1997022077 A JP1997022077 A JP 1997022077A JP 2207797 A JP2207797 A JP 2207797A JP H10209465 A5 JPH10209465 A5 JP H10209465A5
Authority
JP
Japan
Prior art keywords
silicon film
semiconductor device
region
catalytic element
lateral growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997022077A
Other languages
English (en)
Japanese (ja)
Other versions
JP3753827B2 (ja
JPH10209465A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2207797A external-priority patent/JP3753827B2/ja
Priority to JP2207797A priority Critical patent/JP3753827B2/ja
Priority to TW087100259A priority patent/TW386238B/zh
Priority to US09/006,844 priority patent/US6380560B1/en
Priority to CNB2004100642546A priority patent/CN100377363C/zh
Priority to KR10-1998-0001529A priority patent/KR100465416B1/ko
Priority to CN200610101412XA priority patent/CN1877861B/zh
Priority to CNB2006101014083A priority patent/CN100505309C/zh
Priority to CNB2006101007978A priority patent/CN100470739C/zh
Priority to CNB98105837XA priority patent/CN1173412C/zh
Publication of JPH10209465A publication Critical patent/JPH10209465A/ja
Priority to US10/107,113 priority patent/US6730932B2/en
Priority to US10/753,524 priority patent/US20040164300A1/en
Publication of JPH10209465A5 publication Critical patent/JPH10209465A5/ja
Publication of JP3753827B2 publication Critical patent/JP3753827B2/ja
Application granted granted Critical
Priority to US13/462,032 priority patent/US8723182B2/en
Priority to US14/274,888 priority patent/US9389477B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2207797A 1997-01-20 1997-01-20 半導体装置の作製方法 Expired - Fee Related JP3753827B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2207797A JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法
TW087100259A TW386238B (en) 1997-01-20 1998-01-09 Semiconductor device and method of manufacturing the same
US09/006,844 US6380560B1 (en) 1997-01-20 1998-01-14 Semiconductor device forming a pixel matrix circuit
CNB98105837XA CN1173412C (zh) 1997-01-20 1998-01-20 半导体器件
KR10-1998-0001529A KR100465416B1 (ko) 1997-01-20 1998-01-20 반도체장치및그의제조방법
CN200610101412XA CN1877861B (zh) 1997-01-20 1998-01-20 半导体器件及其用途
CNB2006101014083A CN100505309C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CNB2006101007978A CN100470739C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
CNB2004100642546A CN100377363C (zh) 1997-01-20 1998-01-20 一种便携式信息终端和一种摄象机
US10/107,113 US6730932B2 (en) 1997-01-20 2002-03-26 Semiconductor device and method of manufacturing the same
US10/753,524 US20040164300A1 (en) 1997-01-20 2004-01-09 Semiconductor device and method of manufacturing the same
US13/462,032 US8723182B2 (en) 1997-01-20 2012-05-02 Semiconductor device and method of manufacturing the same
US14/274,888 US9389477B2 (en) 1997-01-20 2014-05-12 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2207797A JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10209465A JPH10209465A (ja) 1998-08-07
JPH10209465A5 true JPH10209465A5 (enrdf_load_stackoverflow) 2005-03-17
JP3753827B2 JP3753827B2 (ja) 2006-03-08

Family

ID=12072834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2207797A Expired - Fee Related JP3753827B2 (ja) 1997-01-20 1997-01-20 半導体装置の作製方法

Country Status (2)

Country Link
JP (1) JP3753827B2 (enrdf_load_stackoverflow)
CN (3) CN1877861B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42139E1 (en) 1998-09-04 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3846057B2 (ja) * 1998-09-03 2006-11-15 セイコーエプソン株式会社 電気光学装置の駆動回路及び電気光学装置並びに電子機器
US7317438B2 (en) 1998-10-30 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
US6506635B1 (en) 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4627843B2 (ja) * 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
JP4823543B2 (ja) * 2004-03-26 2011-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101929190B1 (ko) 2010-03-05 2018-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105576037B (zh) 2016-01-08 2018-11-13 京东方科技集团股份有限公司 薄膜晶体管及其制作和测试方法、阵列基板和显示装置
US20190229173A1 (en) * 2018-01-23 2019-07-25 Int Tech Co., Ltd. Light emitting device and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
US5572211A (en) * 1994-01-18 1996-11-05 Vivid Semiconductor, Inc. Integrated circuit for driving liquid crystal display using multi-level D/A converter
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42139E1 (en) 1998-09-04 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device

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