JPH10199806A5 - - Google Patents

Info

Publication number
JPH10199806A5
JPH10199806A5 JP1996358972A JP35897296A JPH10199806A5 JP H10199806 A5 JPH10199806 A5 JP H10199806A5 JP 1996358972 A JP1996358972 A JP 1996358972A JP 35897296 A JP35897296 A JP 35897296A JP H10199806 A5 JPH10199806 A5 JP H10199806A5
Authority
JP
Japan
Prior art keywords
annealing
silicon film
temperature
amorphous silicon
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996358972A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10199806A (ja
JP4001965B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP35897296A priority Critical patent/JP4001965B2/ja
Priority claimed from JP35897296A external-priority patent/JP4001965B2/ja
Priority to US08/997,910 priority patent/US6140166A/en
Publication of JPH10199806A publication Critical patent/JPH10199806A/ja
Priority to US09/686,652 priority patent/US6627486B1/en
Publication of JPH10199806A5 publication Critical patent/JPH10199806A5/ja
Application granted granted Critical
Publication of JP4001965B2 publication Critical patent/JP4001965B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP35897296A 1996-12-27 1996-12-27 結晶性珪素膜の作製方法 Expired - Fee Related JP4001965B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP35897296A JP4001965B2 (ja) 1996-12-27 1996-12-27 結晶性珪素膜の作製方法
US08/997,910 US6140166A (en) 1996-12-27 1997-12-24 Method for manufacturing semiconductor and method for manufacturing semiconductor device
US09/686,652 US6627486B1 (en) 1996-12-27 2000-10-10 Method for manufacturing semiconductor and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35897296A JP4001965B2 (ja) 1996-12-27 1996-12-27 結晶性珪素膜の作製方法

Publications (3)

Publication Number Publication Date
JPH10199806A JPH10199806A (ja) 1998-07-31
JPH10199806A5 true JPH10199806A5 (enExample) 2004-12-09
JP4001965B2 JP4001965B2 (ja) 2007-10-31

Family

ID=18462074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35897296A Expired - Fee Related JP4001965B2 (ja) 1996-12-27 1996-12-27 結晶性珪素膜の作製方法

Country Status (1)

Country Link
JP (1) JP4001965B2 (enExample)

Similar Documents

Publication Publication Date Title
JPH10223532A5 (enExample)
JP3562588B2 (ja) 半導体装置の製造方法
JP2003509844A (ja) 連続ラテラル固化を使用する均一で大きな結晶粒を持ち粒界位置が操作された多結晶の薄膜半導体を生成する方法。
JPH1187243A5 (enExample)
JPH09312260A5 (enExample)
EP1119053A3 (en) Semiconductor, semiconductor device, and method for fabricating the same
CA2177345A1 (en) Method for the Growth of Industrial Crystals
JPS6046074B2 (ja) 半導体結晶成長方法
JPS6256651B2 (enExample)
JPH10199806A5 (enExample)
JPH1050608A5 (enExample)
JPH10199807A5 (enExample)
JP3345363B2 (ja) 多結晶シリコン薄膜の形成方法及び薄膜トランジスタの製造方法
JP2743370B2 (ja) 多結晶膜の形成方法
JPH06140321A (ja) 半導体薄膜の結晶化方法
JP2642587B2 (ja) 多結晶薄膜の形成方法
JPH0294431A (ja) エピタキシャル成長方法
JPS63239937A (ja) 半導体多結晶膜の形成方法
JP2524780B2 (ja) 巨大結晶表面を有する銅合金部材の製造方法
JPH02132819A (ja) 単結晶３−ｖ族化合物半導体層の形成法
JP3574037B2 (ja) 絶縁ゲイト型電界効果トランジスタの製造方法
JPH01187873A (ja) 半導体装置の製造方法
JP3217419B2 (ja) 結晶膜の形成方法
JPH02191321A (ja) 結晶の形成方法
JP3574040B2 (ja) 半導体装置の製造方法