JPS6256651B2 - - Google Patents

Info

Publication number
JPS6256651B2
JPS6256651B2 JP57137392A JP13739282A JPS6256651B2 JP S6256651 B2 JPS6256651 B2 JP S6256651B2 JP 57137392 A JP57137392 A JP 57137392A JP 13739282 A JP13739282 A JP 13739282A JP S6256651 B2 JPS6256651 B2 JP S6256651B2
Authority
JP
Japan
Prior art keywords
single crystal
forming
semiconductor film
crystal semiconductor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57137392A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5928327A (ja
Inventor
Hidefumi Mori
Masahiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57137392A priority Critical patent/JPS5928327A/ja
Priority to US06/434,536 priority patent/US4534820A/en
Publication of JPS5928327A publication Critical patent/JPS5928327A/ja
Publication of JPS6256651B2 publication Critical patent/JPS6256651B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP57137392A 1981-10-19 1982-08-09 単結晶半導体膜形成法 Granted JPS5928327A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57137392A JPS5928327A (ja) 1982-08-09 1982-08-09 単結晶半導体膜形成法
US06/434,536 US4534820A (en) 1981-10-19 1982-10-15 Method for manufacturing crystalline film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57137392A JPS5928327A (ja) 1982-08-09 1982-08-09 単結晶半導体膜形成法

Publications (2)

Publication Number Publication Date
JPS5928327A JPS5928327A (ja) 1984-02-15
JPS6256651B2 true JPS6256651B2 (enExample) 1987-11-26

Family

ID=15197599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57137392A Granted JPS5928327A (ja) 1981-10-19 1982-08-09 単結晶半導体膜形成法

Country Status (1)

Country Link
JP (1) JPS5928327A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812906B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
JPH07120753B2 (ja) * 1986-09-18 1995-12-20 キヤノン株式会社 半導体メモリ装置及びその製造方法
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
JPS63237517A (ja) * 1987-03-26 1988-10-04 Canon Inc ３−５族化合物膜の選択形成方法
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US4866291A (en) * 1987-06-30 1989-09-12 Canon Kabushiki Kaisha Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US5895933A (en) * 1993-06-25 1999-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
US6867432B1 (en) 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
US5942768A (en) 1994-10-07 1999-08-24 Semionductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6601308B2 (en) * 2002-01-02 2003-08-05 Bahram Khoshnood Ambient light collecting bow sight

Also Published As

Publication number Publication date
JPS5928327A (ja) 1984-02-15

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