JPH1050608A5 - - Google Patents

Info

Publication number
JPH1050608A5
JPH1050608A5 JP1997070614A JP7061497A JPH1050608A5 JP H1050608 A5 JPH1050608 A5 JP H1050608A5 JP 1997070614 A JP1997070614 A JP 1997070614A JP 7061497 A JP7061497 A JP 7061497A JP H1050608 A5 JPH1050608 A5 JP H1050608A5
Authority
JP
Japan
Prior art keywords
layer
nucleation
amorphous silicon
silicon layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997070614A
Other languages
English (en)
Japanese (ja)
Other versions
JP4237278B2 (ja
JPH1050608A (ja
Filing date
Publication date
Priority claimed from US08/630,955 external-priority patent/US5893948A/en
Application filed filed Critical
Publication of JPH1050608A publication Critical patent/JPH1050608A/ja
Publication of JPH1050608A5 publication Critical patent/JPH1050608A5/ja
Application granted granted Critical
Publication of JP4237278B2 publication Critical patent/JP4237278B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP07061497A 1996-04-05 1997-03-07 核生成サイトを用いたシリコン単結晶の形成方法 Expired - Lifetime JP4237278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/630,955 1996-04-05
US08/630,955 US5893948A (en) 1996-04-05 1996-04-05 Method for forming single silicon crystals using nucleation sites

Publications (3)

Publication Number Publication Date
JPH1050608A JPH1050608A (ja) 1998-02-20
JPH1050608A5 true JPH1050608A5 (enExample) 2005-01-27
JP4237278B2 JP4237278B2 (ja) 2009-03-11

Family

ID=24529246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07061497A Expired - Lifetime JP4237278B2 (ja) 1996-04-05 1997-03-07 核生成サイトを用いたシリコン単結晶の形成方法

Country Status (2)

Country Link
US (1) US5893948A (enExample)
JP (1) JP4237278B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW452892B (en) * 2000-08-09 2001-09-01 Lin Jing Wei Re-crystallization method of polysilicon thin film of thin film transistor
US6614054B1 (en) * 2000-11-27 2003-09-02 Lg.Philips Lcd Co., Ltd. Polysilicon thin film transistor used in a liquid crystal display and the fabricating method
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
JP2003282438A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器
TWI235496B (en) * 2003-07-04 2005-07-01 Toppoly Optoelectronics Corp Crystallization method of polysilicon layer
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
KR100661347B1 (ko) * 2004-10-27 2006-12-27 삼성전자주식회사 미소 박막 구조물 및 이를 이용한 ｍｅｍｓ 스위치 그리고그것들을 제조하기 위한 방법
KR100599043B1 (ko) 2005-03-18 2006-07-12 삼성전자주식회사 반도체 장치의 제조 방법
TWI260747B (en) * 2005-08-24 2006-08-21 Quanta Display Inc A method for forming a thin film transistor, and a method for transforming an amorphous layer into a poly crystal layer of a single crystal layer
KR100928664B1 (ko) * 2007-04-09 2009-11-27 삼성전자주식회사 낸드 플래시 메모리 소자의 제조 방법
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US9356171B2 (en) 2012-01-25 2016-05-31 The Trustees Of Dartmouth College Method of forming single-crystal semiconductor layers and photovaltaic cell thereon

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
EP0070878B1 (en) * 1981-02-04 1987-05-13 Western Electric Company, Incorporated Growth of structures based on group iv semiconductor materials
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS59128292A (ja) * 1983-01-05 1984-07-24 Seiko Instr & Electronics Ltd 薄膜の結晶化方法
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US4536251A (en) * 1984-06-04 1985-08-20 Xerox Corporation Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
JPS62206816A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6379953A (ja) * 1986-09-24 1988-04-09 Hiroshi Ishihara 単結晶薄膜の製造方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
US4906594A (en) * 1987-06-12 1990-03-06 Agency Of Industrial Science And Technology Surface smoothing method and method of forming SOI substrate using the surface smoothing method
US5322589A (en) * 1989-02-09 1994-06-21 Fujitsu Limited Process and apparatus for recrystallization of semiconductor layer
JP2802449B2 (ja) * 1990-02-16 1998-09-24 三菱電機株式会社 半導体装置の製造方法
JPH059089A (ja) * 1991-06-28 1993-01-19 Canon Inc 結晶の成長方法

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