JP4237278B2 - 核生成サイトを用いたシリコン単結晶の形成方法 - Google Patents

核生成サイトを用いたシリコン単結晶の形成方法 Download PDF

Info

Publication number
JP4237278B2
JP4237278B2 JP07061497A JP7061497A JP4237278B2 JP 4237278 B2 JP4237278 B2 JP 4237278B2 JP 07061497 A JP07061497 A JP 07061497A JP 7061497 A JP7061497 A JP 7061497A JP 4237278 B2 JP4237278 B2 JP 4237278B2
Authority
JP
Japan
Prior art keywords
silicon
layer
amorphous silicon
nucleation
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP07061497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1050608A5 (enExample
JPH1050608A (ja
Inventor
エイチ ナイケル ノバート
ビイ アンダーソン グレゴリ
イー レディ スティーブン
ビイ ボイス ジェイムズ
ミイ ピン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPH1050608A publication Critical patent/JPH1050608A/ja
Publication of JPH1050608A5 publication Critical patent/JPH1050608A5/ja
Application granted granted Critical
Publication of JP4237278B2 publication Critical patent/JP4237278B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
JP07061497A 1996-04-05 1997-03-07 核生成サイトを用いたシリコン単結晶の形成方法 Expired - Lifetime JP4237278B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/630,955 1996-04-05
US08/630,955 US5893948A (en) 1996-04-05 1996-04-05 Method for forming single silicon crystals using nucleation sites

Publications (3)

Publication Number Publication Date
JPH1050608A JPH1050608A (ja) 1998-02-20
JPH1050608A5 JPH1050608A5 (enExample) 2005-01-27
JP4237278B2 true JP4237278B2 (ja) 2009-03-11

Family

ID=24529246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07061497A Expired - Lifetime JP4237278B2 (ja) 1996-04-05 1997-03-07 核生成サイトを用いたシリコン単結晶の形成方法

Country Status (2)

Country Link
US (1) US5893948A (enExample)
JP (1) JP4237278B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW452892B (en) * 2000-08-09 2001-09-01 Lin Jing Wei Re-crystallization method of polysilicon thin film of thin film transistor
US6614054B1 (en) * 2000-11-27 2003-09-02 Lg.Philips Lcd Co., Ltd. Polysilicon thin film transistor used in a liquid crystal display and the fabricating method
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
JP2003282438A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器
TWI235496B (en) * 2003-07-04 2005-07-01 Toppoly Optoelectronics Corp Crystallization method of polysilicon layer
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
KR100661347B1 (ko) * 2004-10-27 2006-12-27 삼성전자주식회사 미소 박막 구조물 및 이를 이용한 ｍｅｍｓ 스위치 그리고그것들을 제조하기 위한 방법
KR100599043B1 (ko) 2005-03-18 2006-07-12 삼성전자주식회사 반도체 장치의 제조 방법
TWI260747B (en) * 2005-08-24 2006-08-21 Quanta Display Inc A method for forming a thin film transistor, and a method for transforming an amorphous layer into a poly crystal layer of a single crystal layer
KR100928664B1 (ko) * 2007-04-09 2009-11-27 삼성전자주식회사 낸드 플래시 메모리 소자의 제조 방법
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US9356171B2 (en) 2012-01-25 2016-05-31 The Trustees Of Dartmouth College Method of forming single-crystal semiconductor layers and photovaltaic cell thereon

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
EP0070878B1 (en) * 1981-02-04 1987-05-13 Western Electric Company, Incorporated Growth of structures based on group iv semiconductor materials
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS59128292A (ja) * 1983-01-05 1984-07-24 Seiko Instr & Electronics Ltd 薄膜の結晶化方法
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US4536251A (en) * 1984-06-04 1985-08-20 Xerox Corporation Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
JPS62206816A (ja) * 1986-03-07 1987-09-11 Agency Of Ind Science & Technol 半導体結晶層の製造方法
JPS6379953A (ja) * 1986-09-24 1988-04-09 Hiroshi Ishihara 単結晶薄膜の製造方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
US4906594A (en) * 1987-06-12 1990-03-06 Agency Of Industrial Science And Technology Surface smoothing method and method of forming SOI substrate using the surface smoothing method
US5322589A (en) * 1989-02-09 1994-06-21 Fujitsu Limited Process and apparatus for recrystallization of semiconductor layer
JP2802449B2 (ja) * 1990-02-16 1998-09-24 三菱電機株式会社 半導体装置の製造方法
JPH059089A (ja) * 1991-06-28 1993-01-19 Canon Inc 結晶の成長方法

Also Published As

Publication number Publication date
US5893948A (en) 1999-04-13
JPH1050608A (ja) 1998-02-20

Similar Documents

Publication Publication Date Title
US5683935A (en) Method of growing semiconductor crystal
US5371381A (en) Process for producing single crystal semiconductor layer and semiconductor device produced by said process
US6300175B1 (en) Method for fabricating thin film transistor
US6235614B1 (en) Methods of crystallizing amorphous silicon layer and fabricating thin film transistor using the same
US6852609B2 (en) Method of forming a polycrystalline silicon layer
JP4237278B2 (ja) 核生成サイトを用いたシリコン単結晶の形成方法
JP4190798B2 (ja) 薄膜トランジスタ及びその製造方法
US20080157095A1 (en) Semiconductor Devices Having Single Crystalline Silicon Layers
KR100333275B1 (ko) 액정표시장치의 ｔｆｔ 및 그 제조방법
JP2005101530A (ja) 多結晶シリコン層の製造方法及びこれを利用したスイッチング素子
JP2008133182A (ja) 単結晶シリコンロッドの製造方法及び単結晶シリコンロッド構造体
JP4203141B2 (ja) 非晶質シリコン層の結晶化方法及びこれを使用する薄膜トランジスターの製造方法
JP2507464B2 (ja) 半導体装置の製造方法
US6710411B2 (en) Method for crystallizing silicon film and thin film transistor and fabricating method using the same
US5821135A (en) Methods for and applications of making buried structures in semiconductor thin films
US4678538A (en) Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects
JPH06140321A (ja) 半導体薄膜の結晶化方法
KR100333269B1 (ko) 박막 트랜지스터와 액정 표시장치 및 그 제조방법
JPH06140324A (ja) 半導体薄膜の結晶化方法
KR100721956B1 (ko) 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
JPH0521344A (ja) 薄膜トランジスタおよびその製法
KR100542990B1 (ko) 비정질 실리콘 박막의 결정화 방법, 마스크 패턴 및 이를사용하여 제조되는 다결정 실리콘 박막을 사용하는 평판디스플레이 디바이스
JPH03250620A (ja) 半導体装置の製造方法
JPH08255753A (ja) 結晶性半導体薄膜の製造方法
JPS5978999A (ja) 半導体単結晶膜の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040225

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20040225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070918

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080318

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080722

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081218

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121226

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131226

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term