JPH10162600A - テスト機能内蔵半導体記憶装置 - Google Patents

テスト機能内蔵半導体記憶装置

Info

Publication number
JPH10162600A
JPH10162600A JP8314699A JP31469996A JPH10162600A JP H10162600 A JPH10162600 A JP H10162600A JP 8314699 A JP8314699 A JP 8314699A JP 31469996 A JP31469996 A JP 31469996A JP H10162600 A JPH10162600 A JP H10162600A
Authority
JP
Japan
Prior art keywords
test
data
memory cell
built
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8314699A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10162600A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shigehiro Hisaie
重博 久家
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8314699A priority Critical patent/JPH10162600A/ja
Priority to US08/841,368 priority patent/US5818772A/en
Priority to KR1019970018442A priority patent/KR100245946B1/ko
Publication of JPH10162600A publication Critical patent/JPH10162600A/ja
Publication of JPH10162600A5 publication Critical patent/JPH10162600A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
JP8314699A 1996-11-26 1996-11-26 テスト機能内蔵半導体記憶装置 Pending JPH10162600A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8314699A JPH10162600A (ja) 1996-11-26 1996-11-26 テスト機能内蔵半導体記憶装置
US08/841,368 US5818772A (en) 1996-11-26 1997-04-30 Semiconductor memory devices having a built-in test function
KR1019970018442A KR100245946B1 (ko) 1996-11-26 1997-05-13 테스트 기능 내장 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8314699A JPH10162600A (ja) 1996-11-26 1996-11-26 テスト機能内蔵半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10162600A true JPH10162600A (ja) 1998-06-19
JPH10162600A5 JPH10162600A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2004-10-21

Family

ID=18056493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8314699A Pending JPH10162600A (ja) 1996-11-26 1996-11-26 テスト機能内蔵半導体記憶装置

Country Status (3)

Country Link
US (1) US5818772A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH10162600A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100245946B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646935B2 (en) 2001-01-17 2003-11-11 Nec Electronics Corporation Semiconductor memory device for reducing number of input cycles for inputting test pattern
US7366965B2 (en) 2003-08-28 2008-04-29 Renesas Technology, Corp. Semiconductor integrated circuit
US7421635B2 (en) 2004-02-26 2008-09-02 Samsung Electronics Co., Ltd. System-on-chip (SOC) having built-in-self-test circuits and a self-test method of the SOC
US20150026529A1 (en) * 2013-07-16 2015-01-22 Lapis Semiconductor Co., Ltd. Semiconductor device and method of evaluating semiconductor device

Families Citing this family (39)

* Cited by examiner, † Cited by third party
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US6041426A (en) * 1995-04-07 2000-03-21 National Semiconductor Corporation Built in self test BIST for RAMS using a Johnson counter as a source of data
US5991213A (en) * 1997-04-30 1999-11-23 Texas Instruments Incorporated Short disturb test algorithm for built-in self-test
US5959912A (en) * 1997-04-30 1999-09-28 Texas Instruments Incorporated ROM embedded mask release number for built-in self-test
KR100468675B1 (ko) * 1997-07-25 2005-03-16 삼성전자주식회사 스태틱램자기테스트회로의어드레스발생기및어드레스발생방법
KR100466979B1 (ko) * 1997-12-26 2005-04-06 삼성전자주식회사 반도체 메모리 장치 및 그 장치의 프로그램 검증 방법
US5995731A (en) * 1997-12-29 1999-11-30 Motorola, Inc. Multiple BIST controllers for testing multiple embedded memory arrays
KR19990069337A (ko) * 1998-02-06 1999-09-06 윤종용 복합 반도체 메모리장치의자기 테스트 회로 및 이를 이용한 자기 테스트 방법
GB9805054D0 (en) * 1998-03-11 1998-05-06 Process Intelligence Limited Memory test system with buffer memory
US6049505A (en) 1998-05-22 2000-04-11 Micron Technology, Inc. Method and apparatus for generating memory addresses for testing memory devices
US6078637A (en) * 1998-06-29 2000-06-20 Cypress Semiconductor Corp. Address counter test mode for memory device
KR100289406B1 (ko) * 1998-08-31 2001-06-01 김영환 내장형메모리의테스트회로
US6550023B1 (en) * 1998-10-19 2003-04-15 Hewlett Packard Development Company, L.P. On-the-fly memory testing and automatic generation of bitmaps
KR100304700B1 (ko) * 1999-01-13 2001-09-26 윤종용 버퍼부를 내장하여 부하를 일정하게 하는 리던던시 회로
US6357018B1 (en) * 1999-01-26 2002-03-12 Dell Usa, L.P. Method and apparatus for determining continuity and integrity of a RAMBUS channel in a computer system
US6415403B1 (en) * 1999-01-29 2002-07-02 Global Unichip Corporation Programmable built in self test for embedded DRAM
US6647524B1 (en) * 1999-04-30 2003-11-11 Worldwide Semiconductor Manufacturing Corporation Built-in-self-test circuit for RAMBUS direct RDRAM
US6671836B1 (en) * 1999-09-23 2003-12-30 Rambus Inc. Method and apparatus for testing memory
JP3434762B2 (ja) * 1999-12-27 2003-08-11 エヌイーシーマイクロシステム株式会社 半導体集積回路
US6557127B1 (en) 2000-02-28 2003-04-29 Cadence Design Systems, Inc. Method and apparatus for testing multi-port memories
DE10016719A1 (de) 2000-04-04 2001-10-11 Infineon Technologies Ag Integrierter Speicher und Verfahren zur Funktionsprüfung von Speicherzellen eines integrierten Speichers
EP1331642A4 (en) * 2000-08-31 2008-03-19 Nec Electronics Corp SEMICONDUCTOR MEMORY COMPONENT, TEST METHOD AND TESTING
US6658610B1 (en) * 2000-09-25 2003-12-02 International Business Machines Corporation Compilable address magnitude comparator for memory array self-testing
US6871292B1 (en) * 2000-11-20 2005-03-22 Intersil Americas, Inc. Sequencer and method of selectively inhibiting clock signals to execute reduced instruction sequences in a re-programmable I/O interface
DE10120668A1 (de) * 2001-04-27 2002-11-07 Infineon Technologies Ag Verfahren zum Testen der Datenaustausch-Funktionsfähigkeit eines Speichers
US7073100B2 (en) * 2002-11-11 2006-07-04 International Business Machines Corporation Method for testing embedded DRAM arrays
JP2004246979A (ja) * 2003-02-14 2004-09-02 Fujitsu Ltd 半導体試験回路、半導体記憶装置および半導体試験方法
ITRM20030198A1 (it) * 2003-04-28 2004-10-29 Micron Technology Inc Monitor ad unita' di controllo basata su rom in un
US7089439B1 (en) * 2003-09-03 2006-08-08 T-Ram, Inc. Architecture and method for output clock generation on a high speed memory device
JP2006048754A (ja) * 2004-07-30 2006-02-16 Fujitsu Ltd 半導体装置
JP2006344345A (ja) * 2005-05-12 2006-12-21 Nec Electronics Corp 揮発性半導体記憶装置
US7405964B2 (en) * 2006-07-27 2008-07-29 Qimonda North America Corp. Integrated circuit to identify read disturb condition in memory cell
US20080077835A1 (en) * 2006-09-27 2008-03-27 Khoche A Jay Automatic Test Equipment Receiving Diagnostic Information from Devices with Built-in Self Test
US20080077834A1 (en) * 2006-09-27 2008-03-27 Ajay Khoche Deterministic Diagnostic Information Capture from Memory Devices with Built-in Self Test
US8448030B2 (en) * 2010-02-25 2013-05-21 Interra Systems Inc. Method and apparatus for optimizing address generation for simultaneously running proximity-based BIST algorithms
KR100979994B1 (ko) * 2010-06-25 2010-09-06 주식회사 케이디파워 태양전지모듈의 온도 검출 장치
US20120236660A1 (en) * 2011-03-16 2012-09-20 Nanya Technology Corp. Test system and test method for memory
JP6920836B2 (ja) * 2017-03-14 2021-08-18 エイブリック株式会社 半導体装置
KR102468811B1 (ko) * 2018-09-07 2022-11-18 에스케이하이닉스 주식회사 Bist 회로를 포함하는 메모리 장치 및 이의 동작 방법
CN112331253B (zh) * 2020-10-30 2023-12-08 深圳市宏旺微电子有限公司 一种芯片的测试方法、终端和存储介质

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661729A (en) * 1995-04-28 1997-08-26 Song Corporation Semiconductor memory having built-in self-test circuit
US5568437A (en) * 1995-06-20 1996-10-22 Vlsi Technology, Inc. Built-in self test for integrated circuits having read/write memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646935B2 (en) 2001-01-17 2003-11-11 Nec Electronics Corporation Semiconductor memory device for reducing number of input cycles for inputting test pattern
US7366965B2 (en) 2003-08-28 2008-04-29 Renesas Technology, Corp. Semiconductor integrated circuit
US7421635B2 (en) 2004-02-26 2008-09-02 Samsung Electronics Co., Ltd. System-on-chip (SOC) having built-in-self-test circuits and a self-test method of the SOC
US7761763B2 (en) 2004-02-26 2010-07-20 Samsung Electronics Co., Ltd. System-on-chip (SOC) having built-in-self-test circuits and a self-test method of the SOC
US20150026529A1 (en) * 2013-07-16 2015-01-22 Lapis Semiconductor Co., Ltd. Semiconductor device and method of evaluating semiconductor device

Also Published As

Publication number Publication date
KR100245946B1 (ko) 2000-03-02
KR19980041735A (ko) 1998-08-17
US5818772A (en) 1998-10-06

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