ITRM20030198A1 - Monitor ad unita' di controllo basata su rom in un - Google Patents

Monitor ad unita' di controllo basata su rom in un

Info

Publication number
ITRM20030198A1
ITRM20030198A1 IT000198A ITRM20030198A ITRM20030198A1 IT RM20030198 A1 ITRM20030198 A1 IT RM20030198A1 IT 000198 A IT000198 A IT 000198A IT RM20030198 A ITRM20030198 A IT RM20030198A IT RM20030198 A1 ITRM20030198 A1 IT RM20030198A1
Authority
IT
Italy
Prior art keywords
rom
control unit
based control
unit monitor
monitor
Prior art date
Application number
IT000198A
Other languages
English (en)
Inventor
Pasquale Conenna
Santis Luca De
Giovanni Naso
Pasquale Pistilli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT000198A priority Critical patent/ITRM20030198A1/it
Publication of ITRM20030198A0 publication Critical patent/ITRM20030198A0/it
Priority to US10/696,973 priority patent/US6977852B2/en
Publication of ITRM20030198A1 publication Critical patent/ITRM20030198A1/it
Priority to US11/166,500 priority patent/US7318181B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G11C29/16—Implementation of control logic, e.g. test mode decoders using microprogrammed units, e.g. state machines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
IT000198A 2003-04-28 2003-04-28 Monitor ad unita' di controllo basata su rom in un ITRM20030198A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT000198A ITRM20030198A1 (it) 2003-04-28 2003-04-28 Monitor ad unita' di controllo basata su rom in un
US10/696,973 US6977852B2 (en) 2003-04-28 2003-10-30 ROM-based controller monitor in a memory device
US11/166,500 US7318181B2 (en) 2003-04-28 2005-06-24 ROM-based controller monitor in a memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000198A ITRM20030198A1 (it) 2003-04-28 2003-04-28 Monitor ad unita' di controllo basata su rom in un

Publications (2)

Publication Number Publication Date
ITRM20030198A0 ITRM20030198A0 (it) 2003-04-28
ITRM20030198A1 true ITRM20030198A1 (it) 2004-10-29

Family

ID=29765782

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000198A ITRM20030198A1 (it) 2003-04-28 2003-04-28 Monitor ad unita' di controllo basata su rom in un

Country Status (2)

Country Link
US (2) US6977852B2 (it)
IT (1) ITRM20030198A1 (it)

Families Citing this family (15)

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ITMI20050063A1 (it) * 2005-01-20 2006-07-21 Atmel Corp Metodo e sistema per la gestione di una richiesta di sospensione in una memoria flash
JP4889961B2 (ja) * 2005-05-06 2012-03-07 ルネサスエレクトロニクス株式会社 半導体集積回路及びそのバーインテスト方法
KR100721581B1 (ko) * 2005-09-29 2007-05-23 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
JP4686350B2 (ja) * 2005-12-09 2011-05-25 株式会社東芝 不揮発性半導体記憶装置及びその自己テスト方法
US20070136640A1 (en) * 2005-12-14 2007-06-14 Jarrar Anis M Defect detection and repair in an embedded random access memory
US7861122B2 (en) * 2006-01-27 2010-12-28 Apple Inc. Monitoring health of non-volatile memory
US20080288712A1 (en) 2007-04-25 2008-11-20 Cornwell Michael J Accessing metadata with an external host
US7913032B1 (en) 2007-04-25 2011-03-22 Apple Inc. Initiating memory wear leveling
US9702305B2 (en) 2013-04-17 2017-07-11 Micron Technology, Inc. Multiple engine sequencer
US10388393B2 (en) * 2016-03-22 2019-08-20 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
US11074988B2 (en) 2016-03-22 2021-07-27 Micron Technology, Inc. Apparatus and methods for debugging on a host and memory device
KR20180033368A (ko) * 2016-09-23 2018-04-03 삼성전자주식회사 케스-케이드 연결 구조로 레퍼런스 클록을 전달하는 스토리지 장치들을 포함하는 전자 장치
KR20190029316A (ko) * 2017-09-12 2019-03-20 에스케이하이닉스 주식회사 마이크로 컨트롤러, 이를 포함하는 메모리 시스템 및 이의 동작방법
US11789071B2 (en) * 2021-01-12 2023-10-17 Texas Instruments Incorporated High speed integrated circuit testing
KR20230069661A (ko) * 2021-11-12 2023-05-19 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357627A (en) * 1989-03-28 1994-10-18 Olympus Optical Co., Ltd. Microcomputer having a program correction function
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
JP3193810B2 (ja) 1993-08-31 2001-07-30 富士通株式会社 不揮発性半導体記憶装置及びその試験方法
JPH08180678A (ja) * 1994-12-27 1996-07-12 Hitachi Ltd ダイナミック型ｒａｍ
JP2746222B2 (ja) 1995-08-31 1998-05-06 日本電気株式会社 半導体記憶装置
US6144594A (en) 1996-01-19 2000-11-07 Stmicroelectronics, Inc. Test mode activation and data override
US20020071325A1 (en) * 1996-04-30 2002-06-13 Hii Kuong Hua Built-in self-test arrangement for integrated circuit memory devices
KR100492205B1 (ko) * 1996-04-30 2005-09-14 텍사스 인스트루먼츠 인코포레이티드 집적회로메모리디바이스의내장자가테스트구성
JPH10162600A (ja) * 1996-11-26 1998-06-19 Mitsubishi Electric Corp テスト機能内蔵半導体記憶装置
US5961653A (en) * 1997-02-19 1999-10-05 International Business Machines Corporation Processor based BIST for an embedded memory
US5875153A (en) * 1997-04-30 1999-02-23 Texas Instruments Incorporated Internal/external clock option for built-in self test
JP3153155B2 (ja) * 1997-07-01 2001-04-03 ローム株式会社 半導体メモリ
US5995424A (en) * 1997-07-16 1999-11-30 Tanisys Technology, Inc. Synchronous memory test system
JP3948141B2 (ja) 1998-09-24 2007-07-25 富士通株式会社 半導体記憶装置及びその制御方法
US6237115B1 (en) 1999-03-08 2001-05-22 Etron Technology, Inc. Design for testability in very high speed memory
JP4074029B2 (ja) * 1999-06-28 2008-04-09 株式会社東芝 フラッシュメモリ
US6556480B2 (en) * 2000-12-29 2003-04-29 Stmicroelectronics S.R.L. EEPROM circuit, in particular a microcontroller including read while write EEPROM for code and data storing
US20040049724A1 (en) * 2002-07-22 2004-03-11 Colin Bill Built-in-self-test (BIST) of flash memory cells and implementation of BIST interface
US6847087B2 (en) * 2002-10-31 2005-01-25 Ememory Technology Inc. Bi-directional Fowler-Nordheim tunneling flash memory

Also Published As

Publication number Publication date
US6977852B2 (en) 2005-12-20
US20050240851A1 (en) 2005-10-27
US20040213060A1 (en) 2004-10-28
ITRM20030198A0 (it) 2003-04-28
US7318181B2 (en) 2008-01-08

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