JPH10125927A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH10125927A
JPH10125927A JP8294419A JP29441996A JPH10125927A JP H10125927 A JPH10125927 A JP H10125927A JP 8294419 A JP8294419 A JP 8294419A JP 29441996 A JP29441996 A JP 29441996A JP H10125927 A JPH10125927 A JP H10125927A
Authority
JP
Japan
Prior art keywords
semiconductor device
silicon film
film
active layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8294419A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125927A5 (cg-RX-API-DMAC10.html
Inventor
Shunpei Yamazaki
舜平 山崎
Hisashi Otani
久 大谷
Jun Koyama
潤 小山
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8294419A priority Critical patent/JPH10125927A/ja
Priority to TW086114475A priority patent/TW451284B/zh
Priority to US08/951,819 priority patent/US6365933B1/en
Priority to KR1019970052690A priority patent/KR100483302B1/ko
Priority to CNB97122885XA priority patent/CN1163974C/zh
Priority to CNB991248570A priority patent/CN1178270C/zh
Priority to CNB991248562A priority patent/CN1277312C/zh
Priority to CNB2006100025945A priority patent/CN100550394C/zh
Publication of JPH10125927A publication Critical patent/JPH10125927A/ja
Priority to US10/024,850 priority patent/US7023052B2/en
Priority to KR1020020061395A priority patent/KR100488311B1/ko
Publication of JPH10125927A5 publication Critical patent/JPH10125927A5/ja
Priority to US11/081,564 priority patent/US7138658B2/en
Priority to US11/533,212 priority patent/US8368142B2/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP8294419A 1996-10-15 1996-10-15 半導体装置およびその作製方法 Withdrawn JPH10125927A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP8294419A JPH10125927A (ja) 1996-10-15 1996-10-15 半導体装置およびその作製方法
TW086114475A TW451284B (en) 1996-10-15 1997-10-03 Semiconductor device and method of manufacturing the same
US08/951,819 US6365933B1 (en) 1996-10-15 1997-10-14 Semiconductor device and method of manufacturing the same
CNB2006100025945A CN100550394C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB97122885XA CN1163974C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB991248570A CN1178270C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
CNB991248562A CN1277312C (zh) 1996-10-15 1997-10-15 半导体器件及其制造方法
KR1019970052690A KR100483302B1 (ko) 1996-10-15 1997-10-15 반도체장치
US10/024,850 US7023052B2 (en) 1996-10-15 2001-12-19 Semiconductor device having crystalline semiconductor layer
KR1020020061395A KR100488311B1 (ko) 1996-10-15 2002-10-09 반도체장치
US11/081,564 US7138658B2 (en) 1996-10-15 2005-03-17 Semiconductor device and method of manufacturing the same
US11/533,212 US8368142B2 (en) 1996-10-15 2006-09-19 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8294419A JPH10125927A (ja) 1996-10-15 1996-10-15 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005088626A Division JP4515302B2 (ja) 2005-03-25 2005-03-25 半導体装置

Publications (2)

Publication Number Publication Date
JPH10125927A true JPH10125927A (ja) 1998-05-15
JPH10125927A5 JPH10125927A5 (cg-RX-API-DMAC10.html) 2004-10-14

Family

ID=17807520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8294419A Withdrawn JPH10125927A (ja) 1996-10-15 1996-10-15 半導体装置およびその作製方法

Country Status (2)

Country Link
JP (1) JPH10125927A (cg-RX-API-DMAC10.html)
CN (1) CN100550394C (cg-RX-API-DMAC10.html)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6911698B2 (en) 1998-07-17 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7186600B2 (en) 1998-08-07 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP2009246389A (ja) * 2009-07-23 2009-10-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009260369A (ja) * 2009-07-23 2009-11-05 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009283974A (ja) * 2009-08-20 2009-12-03 Semiconductor Energy Lab Co Ltd 半導体装置
US7638805B2 (en) 1998-09-04 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
JP2010016391A (ja) * 2009-08-20 2010-01-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2025128213A (ja) * 2011-06-17 2025-09-02 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101976212B1 (ko) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN110010058B (zh) * 2019-05-20 2021-01-29 京东方科技集团股份有限公司 阵列基板及显示面板

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7619253B2 (en) 1998-07-17 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6911698B2 (en) 1998-07-17 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7192813B2 (en) 1998-07-17 2007-03-20 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7186600B2 (en) 1998-08-07 2007-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7638805B2 (en) 1998-09-04 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7642598B2 (en) 1998-09-04 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US9070604B2 (en) 1998-09-04 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42241E1 (en) 1998-09-04 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42139E1 (en) 1998-09-04 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6965122B2 (en) 1999-01-11 2005-11-15 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6512247B1 (en) 1999-01-11 2003-01-28 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US7297982B2 (en) 1999-01-11 2007-11-20 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
JP2009260369A (ja) * 2009-07-23 2009-11-05 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009246389A (ja) * 2009-07-23 2009-10-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009283974A (ja) * 2009-08-20 2009-12-03 Semiconductor Energy Lab Co Ltd 半導体装置
JP2010016391A (ja) * 2009-08-20 2010-01-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2025128213A (ja) * 2011-06-17 2025-09-02 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
CN100550394C (zh) 2009-10-14
CN1825598A (zh) 2006-08-30

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