JPH10111200A5 - - Google Patents

Info

Publication number
JPH10111200A5
JPH10111200A5 JP1997279406A JP27940697A JPH10111200A5 JP H10111200 A5 JPH10111200 A5 JP H10111200A5 JP 1997279406 A JP1997279406 A JP 1997279406A JP 27940697 A JP27940697 A JP 27940697A JP H10111200 A5 JPH10111200 A5 JP H10111200A5
Authority
JP
Japan
Prior art keywords
sensing structure
physical condition
sensing
signal
bending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997279406A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10111200A (ja
Filing date
Publication date
Priority claimed from US08/722,384 external-priority patent/US6308577B1/en
Application filed filed Critical
Publication of JPH10111200A publication Critical patent/JPH10111200A/ja
Publication of JPH10111200A5 publication Critical patent/JPH10111200A5/ja
Pending legal-status Critical Current

Links

JP9279406A 1996-09-30 1997-09-29 センサにおける膜応力を補償する回路および方法 Pending JPH10111200A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/722,384 US6308577B1 (en) 1996-09-30 1996-09-30 Circuit and method of compensating for membrane stress in a sensor
US722384 1996-09-30

Publications (2)

Publication Number Publication Date
JPH10111200A JPH10111200A (ja) 1998-04-28
JPH10111200A5 true JPH10111200A5 (enExample) 2005-06-16

Family

ID=24901612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9279406A Pending JPH10111200A (ja) 1996-09-30 1997-09-29 センサにおける膜応力を補償する回路および方法

Country Status (6)

Country Link
US (1) US6308577B1 (enExample)
EP (1) EP0833137A3 (enExample)
JP (1) JPH10111200A (enExample)
KR (1) KR19980025190A (enExample)
CN (1) CN1089161C (enExample)
TW (1) TW345748B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE19957556A1 (de) * 1999-11-30 2001-05-31 Bosch Gmbh Robert Halbleiter-Drucksensor und Meßanordnung
JP2002310826A (ja) * 2001-02-08 2002-10-23 Tgk Co Ltd 圧力センサの調整方法
JP4228827B2 (ja) * 2003-07-31 2009-02-25 パナソニック電工株式会社 圧電型超音波センサ及びその共振周波数調節方法
US7006938B2 (en) * 2004-06-16 2006-02-28 Ami Semiconductor, Inc. Reactive sensor modules using Pade' Approximant based compensation and providing module-sourced excitation
ATE470844T1 (de) * 2004-09-24 2010-06-15 Grundfos As Drucksensor
DE102005017853A1 (de) * 2005-04-18 2006-10-19 Siemens Ag Drucksensorvorrichtung
US8132465B1 (en) 2007-08-01 2012-03-13 Silicon Microstructures, Inc. Sensor element placement for package stress compensation
US9562820B2 (en) * 2013-02-28 2017-02-07 Mks Instruments, Inc. Pressure sensor with real time health monitoring and compensation
US10027078B2 (en) 2014-01-02 2018-07-17 Sears Brands, L.L.C. Slide battery and power tool for use with both slide and post batteries
DE102015104410B4 (de) * 2015-03-24 2018-09-13 Tdk-Micronas Gmbh Drucksensor
US10553843B2 (en) 2016-03-28 2020-02-04 Transform Sr Brands Llc Portable power tool, battery pack, and cell configurations for same
JP6663314B2 (ja) * 2016-07-08 2020-03-11 アズビル株式会社 圧力センサ
CN107192556B (zh) * 2017-05-12 2019-07-02 重庆交通大学 微型定容燃烧空间测试装置
CN114152369B (zh) * 2020-09-07 2024-10-08 中国科学院微电子研究所 一种mems压阻式压力传感器及压阻排布方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663833A (en) 1970-04-02 1972-05-16 Monsanto Co Square root extractor for a process control system
US3743926A (en) * 1972-04-06 1973-07-03 Gen Electric Fine linearity control in integral silicon transducers
US3772628A (en) * 1972-05-30 1973-11-13 Gen Electric Integral silicon diaphragms for low pressure measurements
US4050313A (en) * 1975-06-04 1977-09-27 Hitachi, Ltd. Semiconductor pressure transducer
US4317126A (en) 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4476726A (en) * 1982-08-19 1984-10-16 Kulite Semiconductor Products, Inc. Pressure transducers exhibiting linear pressure operation
JPS59127876A (ja) * 1983-01-13 1984-07-23 Nec Corp ダイアフラム形半導体圧力センサ
JPS62204580A (ja) * 1986-03-05 1987-09-09 Fujikura Ltd 半導体圧力センサの直線性改善方法
US4800759A (en) 1987-08-31 1989-01-31 Yokogawa Electric Corporation Semiconductor pressure converter
JPH01109231A (ja) * 1987-10-22 1989-04-26 Komatsu Ltd 圧力センサ
JPH01253622A (ja) * 1988-04-01 1989-10-09 Kyowa Electron Instr Co Ltd ダイヤフラム型荷重変換器
JPH02150732A (ja) * 1988-12-01 1990-06-11 Fuji Electric Co Ltd 圧力変換器の補償回路
FR2650389B1 (fr) * 1989-07-27 1993-03-26 Sextant Avionique Dispositif de mesure de deformation d'une membrane
EP0454901B1 (de) * 1989-12-06 1994-06-22 Siemens-Albis Aktiengesellschaft Kraftwandler
DE4000326C2 (de) * 1990-01-08 1995-12-14 Mannesmann Ag Drucksensor
JPH03233334A (ja) * 1990-02-08 1991-10-17 Nec Corp 半導体圧力センサ
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5166892A (en) * 1990-04-30 1992-11-24 Yamato Scale Company, Limited Device for compensating for time-dependent error due to creep and like of measuring apparatus
US5291788A (en) * 1991-09-24 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor pressure sensor

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