JPH09306818A - 露光方法 - Google Patents

露光方法

Info

Publication number
JPH09306818A
JPH09306818A JP8121940A JP12194096A JPH09306818A JP H09306818 A JPH09306818 A JP H09306818A JP 8121940 A JP8121940 A JP 8121940A JP 12194096 A JP12194096 A JP 12194096A JP H09306818 A JPH09306818 A JP H09306818A
Authority
JP
Japan
Prior art keywords
pattern
substrate
shot
shots
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8121940A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09306818A5 (enExample
Inventor
Toshio Matsuura
敏男 松浦
Nobutaka Fujimori
信孝 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8121940A priority Critical patent/JPH09306818A/ja
Priority to KR1019970018304A priority patent/KR100471461B1/ko
Priority to US08/856,029 priority patent/US5973766A/en
Publication of JPH09306818A publication Critical patent/JPH09306818A/ja
Publication of JPH09306818A5 publication Critical patent/JPH09306818A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8121940A 1996-05-16 1996-05-16 露光方法 Pending JPH09306818A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8121940A JPH09306818A (ja) 1996-05-16 1996-05-16 露光方法
KR1019970018304A KR100471461B1 (ko) 1996-05-16 1997-05-12 노광방법및노광장치
US08/856,029 US5973766A (en) 1996-05-16 1997-05-14 Exposure method and exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8121940A JPH09306818A (ja) 1996-05-16 1996-05-16 露光方法

Publications (2)

Publication Number Publication Date
JPH09306818A true JPH09306818A (ja) 1997-11-28
JPH09306818A5 JPH09306818A5 (enExample) 2004-12-02

Family

ID=14823701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8121940A Pending JPH09306818A (ja) 1996-05-16 1996-05-16 露光方法

Country Status (1)

Country Link
JP (1) JPH09306818A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142328A (ja) * 2005-11-22 2007-06-07 Renesas Technology Corp 半導体装置の製造方法、マスクおよび半導体装置
US8139218B2 (en) 2005-07-06 2012-03-20 Asml Netherlands B.V. Substrate distortion measurement
JP2015534102A (ja) * 2012-08-29 2015-11-26 エーエスエムエル ネザーランズ ビー．ブイ． 変形パターン認識手法、パターン転写方法、処理デバイスモニタリング方法、及びリソグラフィ装置
JP2017090817A (ja) * 2015-11-16 2017-05-25 キヤノン株式会社 露光装置、及び物品の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139218B2 (en) 2005-07-06 2012-03-20 Asml Netherlands B.V. Substrate distortion measurement
US9645512B2 (en) 2005-07-06 2017-05-09 Asml Netherlands B.V. Substrate distortion measurement
JP2007142328A (ja) * 2005-11-22 2007-06-07 Renesas Technology Corp 半導体装置の製造方法、マスクおよび半導体装置
JP2015534102A (ja) * 2012-08-29 2015-11-26 エーエスエムエル ネザーランズ ビー．ブイ． 変形パターン認識手法、パターン転写方法、処理デバイスモニタリング方法、及びリソグラフィ装置
US9753377B2 (en) 2012-08-29 2017-09-05 Asml Netherlands B.V. Deformation pattern recognition method, pattern transferring method, processing device monitoring method, and lithographic apparatus
JP2017090817A (ja) * 2015-11-16 2017-05-25 キヤノン株式会社 露光装置、及び物品の製造方法

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