JPH09232429A - 多層配線半導体装置およびその製造方法 - Google Patents

多層配線半導体装置およびその製造方法

Info

Publication number
JPH09232429A
JPH09232429A JP8041143A JP4114396A JPH09232429A JP H09232429 A JPH09232429 A JP H09232429A JP 8041143 A JP8041143 A JP 8041143A JP 4114396 A JP4114396 A JP 4114396A JP H09232429 A JPH09232429 A JP H09232429A
Authority
JP
Japan
Prior art keywords
via hole
conductive plug
interlayer insulating
insulating film
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8041143A
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiro Goto
啓郎 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8041143A priority Critical patent/JPH09232429A/ja
Priority to KR1019970006851A priority patent/KR970063677A/ko
Publication of JPH09232429A publication Critical patent/JPH09232429A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226Via connections in a multilevel interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP8041143A 1996-02-28 1996-02-28 多層配線半導体装置およびその製造方法 Pending JPH09232429A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8041143A JPH09232429A (ja) 1996-02-28 1996-02-28 多層配線半導体装置およびその製造方法
KR1019970006851A KR970063677A (ko) 1996-02-28 1997-02-28 멀티레벨 상호 접속 반도체 장치와 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8041143A JPH09232429A (ja) 1996-02-28 1996-02-28 多層配線半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPH09232429A true JPH09232429A (ja) 1997-09-05

Family

ID=12600207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8041143A Pending JPH09232429A (ja) 1996-02-28 1996-02-28 多層配線半導体装置およびその製造方法

Country Status (2)

Country Link
JP (1) JPH09232429A (ko)
KR (1) KR970063677A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100938A (ja) * 1998-09-16 2000-04-07 Samsung Electronics Co Ltd 半導体装置の多層配線構造
JPWO2004097930A1 (ja) * 2003-04-28 2006-07-13 富士通株式会社 半導体装置及びその製造方法
WO2011044833A1 (en) * 2009-10-14 2011-04-21 Csmc Technologies Fab1 Co., Ltd. Semiconductor device structure and method for manufacturing the same
JP2011204915A (ja) * 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130542A (ja) * 1985-12-03 1987-06-12 Oki Electric Ind Co Ltd 多層配線の形成方法
JPH07335625A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130542A (ja) * 1985-12-03 1987-06-12 Oki Electric Ind Co Ltd 多層配線の形成方法
JPH07335625A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100938A (ja) * 1998-09-16 2000-04-07 Samsung Electronics Co Ltd 半導体装置の多層配線構造
JPWO2004097930A1 (ja) * 2003-04-28 2006-07-13 富士通株式会社 半導体装置及びその製造方法
US7492047B2 (en) 2003-04-28 2009-02-17 Fujitsu Limited Semiconductor device and its manufacture method
WO2011044833A1 (en) * 2009-10-14 2011-04-21 Csmc Technologies Fab1 Co., Ltd. Semiconductor device structure and method for manufacturing the same
JP2011204915A (ja) * 2010-03-25 2011-10-13 Sony Corp 半導体装置、半導体装置の製造方法、半導体装置の設計方法、及び電子機器
US8946898B2 (en) 2010-03-25 2015-02-03 Sony Corporation Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
US9276033B2 (en) 2010-03-25 2016-03-01 Sony Corporation Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus

Also Published As

Publication number Publication date
KR970063677A (ko) 1997-09-12

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Effective date: 19980324