JPH09172066A5 - - Google Patents

Info

Publication number
JPH09172066A5
JPH09172066A5 JP1996277686A JP27768696A JPH09172066A5 JP H09172066 A5 JPH09172066 A5 JP H09172066A5 JP 1996277686 A JP1996277686 A JP 1996277686A JP 27768696 A JP27768696 A JP 27768696A JP H09172066 A5 JPH09172066 A5 JP H09172066A5
Authority
JP
Japan
Prior art keywords
conductors
silicon carbide
amorphous silicon
sacrificial material
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996277686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09172066A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH09172066A publication Critical patent/JPH09172066A/ja
Publication of JPH09172066A5 publication Critical patent/JPH09172066A5/ja
Pending legal-status Critical Current

Links

JP8277686A 1995-10-23 1996-10-21 風橋の形成方法 Pending JPH09172066A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54707495A 1995-10-23 1995-10-23
US08/547074 1995-10-23

Publications (2)

Publication Number Publication Date
JPH09172066A JPH09172066A (ja) 1997-06-30
JPH09172066A5 true JPH09172066A5 (https=) 2004-10-21

Family

ID=24183250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8277686A Pending JPH09172066A (ja) 1995-10-23 1996-10-21 風橋の形成方法

Country Status (6)

Country Link
US (1) US6268262B1 (https=)
EP (1) EP0771026B1 (https=)
JP (1) JPH09172066A (https=)
KR (1) KR100415338B1 (https=)
DE (1) DE69627954T2 (https=)
TW (1) TW308719B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294455B1 (en) 1997-08-20 2001-09-25 Micron Technology, Inc. Conductive lines, coaxial lines, integrated circuitry, and methods of forming conductive lines, coaxial lines, and integrated circuitry
US6709968B1 (en) * 2000-08-16 2004-03-23 Micron Technology, Inc. Microelectronic device with package with conductive elements and associated method of manufacture
US6670719B2 (en) 1999-08-25 2003-12-30 Micron Technology, Inc. Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture
EP1094506A3 (en) * 1999-10-18 2004-03-03 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
DE19957302C2 (de) * 1999-11-29 2001-11-15 Infineon Technologies Ag Substrat mit mindestens zwei darauf angeordneten Metallstrukturen und Verfahren zu dessen Herstellung
KR100772736B1 (ko) * 2000-03-13 2007-11-01 엔엑스피 비 브이 반도체 디바이스 제조 방법
US6798064B1 (en) * 2000-07-12 2004-09-28 Motorola, Inc. Electronic component and method of manufacture
US6413852B1 (en) * 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
US6449839B1 (en) * 2000-09-06 2002-09-17 Visteon Global Tech., Inc. Electrical circuit board and a method for making the same
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
DE10109778A1 (de) * 2001-03-01 2002-09-19 Infineon Technologies Ag Hohlraumstruktur und Verfahren zum Herstellen einer Hohlraumstruktur
DE10142201C2 (de) * 2001-08-29 2003-10-16 Infineon Technologies Ag Verfahren zur Erzeugung von Hohlräumen mit Submikrometer-Strukturen in einer Halbleitereinrichtung mittels einer gefrierenden Prozessflüssigkeit
JP3793143B2 (ja) * 2002-11-28 2006-07-05 株式会社シマノ 自転車用電子制御装置
EP1542261B1 (en) * 2003-12-10 2007-03-28 Freescale Semiconductor, Inc. Method of producing an element comprising an electrical conductor encircled by magnetic material
US7262586B1 (en) 2005-03-31 2007-08-28 Cypress Semiconductor Corporation Shunt type voltage regulator
JP5072417B2 (ja) * 2007-04-23 2012-11-14 株式会社東芝 半導体装置およびその製造方法
US7964442B2 (en) * 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
JP2013089859A (ja) * 2011-10-20 2013-05-13 Toshiba Corp 半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP2703773B2 (ja) * 1988-04-14 1998-01-26 シャープ株式会社 半導体装置の製造方法
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH02177550A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 半導体装置およびその製造方法
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
JPH04268750A (ja) * 1991-02-25 1992-09-24 Toshiba Corp 半導体集積回路
US5374792A (en) * 1993-01-04 1994-12-20 General Electric Company Micromechanical moving structures including multiple contact switching system
US5353498A (en) * 1993-02-08 1994-10-11 General Electric Company Method for fabricating an integrated circuit module
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5674758A (en) * 1995-06-06 1997-10-07 Regents Of The University Of California Silicon on insulator achieved using electrochemical etching
DE69726718T2 (de) * 1997-07-31 2004-10-07 St Microelectronics Srl Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

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