KR100415338B1 - 에어브릿지의형성방법 - Google Patents

에어브릿지의형성방법 Download PDF

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Publication number
KR100415338B1
KR100415338B1 KR1019960047594A KR19960047594A KR100415338B1 KR 100415338 B1 KR100415338 B1 KR 100415338B1 KR 1019960047594 A KR1019960047594 A KR 1019960047594A KR 19960047594 A KR19960047594 A KR 19960047594A KR 100415338 B1 KR100415338 B1 KR 100415338B1
Authority
KR
South Korea
Prior art keywords
silicon carbide
conductors
amorphous silicon
sacrificial material
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960047594A
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English (en)
Korean (ko)
Other versions
KR970023839A (ko
Inventor
마크 존 로보다
Original Assignee
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다우 코닝 코포레이션 filed Critical 다우 코닝 코포레이션
Publication of KR970023839A publication Critical patent/KR970023839A/ko
Application granted granted Critical
Publication of KR100415338B1 publication Critical patent/KR100415338B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483—Interconnections over air gaps, e.g. air bridges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1019960047594A 1995-10-23 1996-10-23 에어브릿지의형성방법 Expired - Fee Related KR100415338B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54707495A 1995-10-23 1995-10-23
US?08/547,074? 1995-10-23
US08/547,074 1995-10-23

Publications (2)

Publication Number Publication Date
KR970023839A KR970023839A (ko) 1997-05-30
KR100415338B1 true KR100415338B1 (ko) 2004-04-13

Family

ID=24183250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960047594A Expired - Fee Related KR100415338B1 (ko) 1995-10-23 1996-10-23 에어브릿지의형성방법

Country Status (6)

Country Link
US (1) US6268262B1 (https=)
EP (1) EP0771026B1 (https=)
JP (1) JPH09172066A (https=)
KR (1) KR100415338B1 (https=)
DE (1) DE69627954T2 (https=)
TW (1) TW308719B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294455B1 (en) 1997-08-20 2001-09-25 Micron Technology, Inc. Conductive lines, coaxial lines, integrated circuitry, and methods of forming conductive lines, coaxial lines, and integrated circuitry
US6709968B1 (en) * 2000-08-16 2004-03-23 Micron Technology, Inc. Microelectronic device with package with conductive elements and associated method of manufacture
US6670719B2 (en) 1999-08-25 2003-12-30 Micron Technology, Inc. Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture
EP1094506A3 (en) * 1999-10-18 2004-03-03 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
DE19957302C2 (de) * 1999-11-29 2001-11-15 Infineon Technologies Ag Substrat mit mindestens zwei darauf angeordneten Metallstrukturen und Verfahren zu dessen Herstellung
KR100772736B1 (ko) * 2000-03-13 2007-11-01 엔엑스피 비 브이 반도체 디바이스 제조 방법
US6798064B1 (en) * 2000-07-12 2004-09-28 Motorola, Inc. Electronic component and method of manufacture
US6413852B1 (en) * 2000-08-31 2002-07-02 International Business Machines Corporation Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
US6449839B1 (en) * 2000-09-06 2002-09-17 Visteon Global Tech., Inc. Electrical circuit board and a method for making the same
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
DE10109778A1 (de) * 2001-03-01 2002-09-19 Infineon Technologies Ag Hohlraumstruktur und Verfahren zum Herstellen einer Hohlraumstruktur
DE10142201C2 (de) * 2001-08-29 2003-10-16 Infineon Technologies Ag Verfahren zur Erzeugung von Hohlräumen mit Submikrometer-Strukturen in einer Halbleitereinrichtung mittels einer gefrierenden Prozessflüssigkeit
JP3793143B2 (ja) * 2002-11-28 2006-07-05 株式会社シマノ 自転車用電子制御装置
EP1542261B1 (en) * 2003-12-10 2007-03-28 Freescale Semiconductor, Inc. Method of producing an element comprising an electrical conductor encircled by magnetic material
US7262586B1 (en) 2005-03-31 2007-08-28 Cypress Semiconductor Corporation Shunt type voltage regulator
JP5072417B2 (ja) * 2007-04-23 2012-11-14 株式会社東芝 半導体装置およびその製造方法
US7964442B2 (en) * 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
JP2013089859A (ja) * 2011-10-20 2013-05-13 Toshiba Corp 半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP2703773B2 (ja) * 1988-04-14 1998-01-26 シャープ株式会社 半導体装置の製造方法
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH02177550A (ja) * 1988-12-28 1990-07-10 Toshiba Corp 半導体装置およびその製造方法
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
JPH04268750A (ja) * 1991-02-25 1992-09-24 Toshiba Corp 半導体集積回路
US5374792A (en) * 1993-01-04 1994-12-20 General Electric Company Micromechanical moving structures including multiple contact switching system
US5353498A (en) * 1993-02-08 1994-10-11 General Electric Company Method for fabricating an integrated circuit module
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5674758A (en) * 1995-06-06 1997-10-07 Regents Of The University Of California Silicon on insulator achieved using electrochemical etching
DE69726718T2 (de) * 1997-07-31 2004-10-07 St Microelectronics Srl Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

Also Published As

Publication number Publication date
TW308719B (https=) 1997-06-21
US6268262B1 (en) 2001-07-31
DE69627954T2 (de) 2004-02-19
DE69627954D1 (de) 2003-06-12
EP0771026A2 (en) 1997-05-02
EP0771026A3 (en) 1998-06-10
EP0771026B1 (en) 2003-05-07
JPH09172066A (ja) 1997-06-30
KR970023839A (ko) 1997-05-30

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