TW308719B - - Google Patents
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- Publication number
- TW308719B TW308719B TW085112418A TW85112418A TW308719B TW 308719 B TW308719 B TW 308719B TW 085112418 A TW085112418 A TW 085112418A TW 85112418 A TW85112418 A TW 85112418A TW 308719 B TW308719 B TW 308719B
- Authority
- TW
- Taiwan
- Prior art keywords
- coating
- bridge
- amorphous
- electrical conductor
- sacrificial material
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 238000003763 carbonization Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000011049 filling Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DCERHCFNWRGHLK-UHFFFAOYSA-N C[Si](C)C Chemical group C[Si](C)C DCERHCFNWRGHLK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- -1 atmospheres Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229940094989 trimethylsilane Drugs 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4821—Bridge structure with air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5381—Crossover interconnections, e.g. bridge stepovers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
A7 B7 五、發明説明(1 本發明係關於一種在電子裝置上形成空 方法係使用無定形碳化矽,以在氣流橋形成期間及其此 保護該裝置上之電導體。 、 ’ 電子工業繼續力求減小裝置的尺寸β小 、 、 土1G万法 < 困難 疋—是維持充分之電介體在電導體間以防止裝置故障。 爲了解決此問題,工業界已研究過廣泛種類的低介。 數材料。此類材料已顯示提供2和2以上之介電常數。^惋 的是’許多此類材料難以處理且其化學與物理性質可μ 各種裝置不相容。 flb '、 經 Λ 去 體 可供利用之最佳電介體之-是.空氣。許多研究者試圖 由留下空隙在接鄰電導體間而利用此。時常稱此等空隙 ’’空氣橋’,。例如’美國專利案5,3 2 4,6 8 3中記述經由移 ^電導體間之所有或-部份的介質層而形成空氣橋在積體 電路中。然而,其中所述之方法,材料和最後產物 明中者不同。 # 余等意外發現形成空氣橋之方法,此方法使用碳化石夕的 性質在其成形時且此方法具有在成形後更持久之意外優點 0 經濟部中央標準局員工消費合作社印製 本發明係關於在電子裝置上形成空氣橋之方法。該方法 包含首先形成2分開之電導體在一電子裝置上。此等電導 體具有邊緣,其係側向相互接鄰而各個導體則經由空隙予 以刀隔。其次’將無定形碳化矽塗層形成在側向相互接都 t各電導體的邊緣上因此使空隙的大小經由塗層的厚度予 以減小,同時仍留下空隙在其中間。其次,將一種犧牲材 -4- (210X297公釐) 本紐尺度糾作 2 2 經濟部中央標準局員工消费合作社印u 3〇87i9 五、發明説明 表㈣之無定料切所塗覆之 :::的空隙、中。然後將無定形碳切塗層形成在該犧牲 碳化矽::成此塗層以便它接觸電爭體的邊緣上之無定形 形成藉以包膠犧牲材科在無定形碳切中。然後 上^導:橋而電連接各個電導體。將此橋形成在2電導體 然疋形碳切塗層則蓋覆該犧牲材料。然後沉積一益 疋形碳化矽塗層來蓋覆哕劣啻樁 θ ’’’、 … € 4电橋。取後’將犧牲材料蚀刻 田下氧泥橋在各電導體上之碳化矽間。 圖1是具有電導體在其上之電子裝置。 圖2是使用碳化矽予以蓋覆之圖】的電子裝置。 圖3是圖2之電子裝置,其中將碳切㈣掉以便將側向 相互接鄰之電導體邊緣用碳化矽蓋覆。 圖4是使用犧牲材料所蓋復之圖3的電子裝置。 圖5^圖4之電子裝置,其中將犧牲材料形成囷型而場充 各經蓋覆之電導體間的空隙。 圖6是使用碳化矽所蓋覆之圖5的電子裝置。 圖7是圖6之電子裝置,其中將竣切形成圖型。 圖8是圖7之電子裝置’其中形成導電之纖維轉移口。 圖9是使用碳化矽所蓋覆之圖8的電子裝置。 圖10是圖9之電子裝置,其中移除了犧牲材料。 本發明係以余等發現爲基準,即:可使用無定形峻化碎 (或"碳化珍")的性質在空氣橋的方法中。此方法提供產生 空氣橋之實用設備而藉以解決小型化所涉及之問題之一。 另外,因爲各電導體經由無定形碳化矽塗層予以保=和密 -5- 本纸張尺度逍用中國國家標孪(CNS ) Μ規格(210X29-;公楚) 參 3f 本 ί
經濟部中央標準局員工消費合作社印製 A7 _______B7 五、發明説明'~~~----- 封,所以所產生之空氣橋較該项技藝中所熟知者更爲持久 0 本發明中之第一步驟包括形成2分開之電導體(”導體,, 在電子裝置上。可將此等電導㈣成在裝置内之任何位準 。-種例示之電子裝置顯示於圖i中係⑴而各電導 示爲(2)。 " 本文中所使用之電子裝置並無重要性,幾乎該項技藝中 所熟知之任何電子裝置及/或商業上所製造者在本文中有 用。此等裝置包括石夕基之裝置,绅化嫁基之裝置,焦點平 面陣列,光電子裝置,光電伏打.電池及光學裝置。 亦,本文中製造電導體時所使用之材料並不重要,幾乎 孩項技藝中所熟知之任何材料及/或商業上所製造者於本 文中均有用。舉例而言’此等材料包括各種金屬例如鋁, 銅,金,銀和鉑;一種矽化物;聚矽:無定形矽;一種導 電之有機物料或導電之無機物料。 沉積此等電導體之方法在該項技藝方面亦係熟知。所利 用之特定方法亦係重要性。此等方法的實例包括各種物理 洛汽;殿積(PVD)技術例如噴濺和電子束蒸發或各種液體澱 積技術。 如圖1中所示’將各電導體形成在裝置上因此使各電導 體經由空陈區域(3)予以分隔。另外,各電導體具有邊緣(4) ,其側向相互接鄰在裝置的表面上。 本發明中之下一步驟包括形成無定形碳化矽塗層在各電 導體之邊緣(4)上’其係側向相互接鄰因此使空隙(3)的大 -6- 本紙張尺度適用中—國國家標^^ϋ7ΊΓ〇χ29^瘦)一 --------—^------ΐτ------i --- (請先閱讀背面之注意事項再填窍本頁) A7' B7 經濟部中央標準局員工消費合作社印裝 五、發明説明 小經由塗層(7)的厚度減小。此等塗層顯示於圖3中,數字 (6)。 子 通常,此等塗層係由一種方法予以形成在各電導想上, 此方法包括沉積無定形碳化矽在裝置的整個頂表面上如圖 2中之數字(5)所示。然後將此無定形碳化矽形成圖型並蝕 刻而留下塗層(6)在電導體上。然而,其他相當之設備例如 形成圖型之沉積亦可實行供使用於本發明中。 施加碳化矽的方法對於本發明並不重要且許多方法在該 項技藝方面所熟知。可應用之方法的實例包括各種化學氣 相沉積技術例如習用之CVD,光化學氣相沉積,電衆加強 之化學氣相沉積(PECVD),電子迴旋加速器諧振(ECR)或 喷射蒸氣沉積及各種物理蒸氣沉積技術例如嘴賤和電子束 蒸發。此等方法包括添加能量(其形式爲熱,電漿等)至經 汽化之種屬而造成所需要之反應或聚焦能量在材料的固態 樣品上而致使其沉積。 在習見之化學氣相沉積法中,塗層係經由使所需要之先 質氣體的氣流通過一經加熱之基材上予以沉積。當先質氣 體接觸熱表面時,彼等起反應而沉積塗層。100至1〇〇〇 »C 範圍内之基材溫度足以在數分鐘至數小時内形成此等塗層 ’係以先質及所需要之塗層厚度爲基準,若須要,可使用 反應性金屬在此方法中來便利沉積。 在PECVD中,所需要之先質氣體係經由使其通經電漿場 而起反應。然後將藉以所形成之反應性種屬聚焦在基材上 ,彼等立即黏附在其上。通常,此方法較CVD爲優良因爲 本紙張尺度適用中國國家標淮(CNS ) Λ4規格(210X 297公釐) ---------私衣------,1T------i * - ί (. (請先閲讀背面之注意事項再填寫本頁) 經濟部中央榡準局員工消費合作社印製 A7 . _____B7 五、發明説明(5 ) ' — ' 〜 可以使用較低之基材溫度。例如,5 〇 °c至6 〇 〇 °c的基材溫 度即產生作用。 _ 此等方法中所使用之電漿可包含自各種來源所導出之能 量例如:放電,射頻或微波範圍中之電磁場,雷射或粒子 束。在大多數電漿沉積方法中,通常較佳者是使用射頻 (10仟赫至102百萬赫)或在中等功率密度(〇丨至5瓦特/平方 厘米)時之微波㈧‘丨至⑺十億赫)能量。然而,通常將特定 頻率,功率和壓力調整使適合所使用之先質氣體和設備。 先質氣體對於本發明亦無重要性。適當先質氣體的實例 包括(1)於有具有—至六個碳原予之烷烴例如,乙烷或丙烷 的存在時,矽烷或由化矽烷例如三氣矽烷之混合物;(2)— 種烷基矽烷例如甲基矽烷,二甲基矽烷,三甲基矽烷和六 甲基乙矽烷;或(3)矽環丁烷或二矽環丁烷如二矽環丁烷如 美國專利案5,01 1,7〇6中所述者。本發明中特佳者是三甲基 矽炫的電漿加強之化學汽相沉積。 相同,蝕刻的方法並無重要性且幾乎該項技藝中所熟知 之任何方法在此處可起作用。舉例而言,此等包括乾蝕刻 (例如使用電漿),溼蝕刻(例如,使用含水之氫氟酸)及/ 或雷射燒蚀。 其次,將犧牲材料沉積在電導體上接鄰經無定形碳化矽 蓋覆之表面間的空隙中。此在圖5中顯示成材料(9)。通常 ’此材料亦.經由一種方法予以形成,此方法包括沉積犧牲 材料在裝置的整個頂表面上如圖4中經由(8)所示。然後將 此犧牲材料形成圖型並蝕刻而留下材料(9)在空隙中。然而 -8- 本紙張尺度適用中g國家標準(CNS ) Λ4規格(21〇χ 297公釐) ί請先閱讀背面之注意事項再填寫本頁) -裝· -5
五、發明説明( 3087Ϊ9 明。、 項方法例如經形成圖型之沉積亦經考慮用於本發 不t:中,所使用之犧牲材料並無重要性只要可將它蝕刻而 ^或損ί電子裝置,電㈣或碳切。舉例而言 和$人料包括乳化物,氛化物,氣化之物料,有機物料 和L之物料。特定實例包括二氧切,氮化石夕,氮化欽 鹽玻璃和㈣亞胺。較佳者是自氫砂倍半氧燒樹 曰毕in石’將它經由例如美國專利案4,756,977 述疋一種方法而應用。 犧牲材料就所選擇之材料而論.係經由該項技藝中所孰知 (技術予以應用。此等技術可包括,舉例而言,旋轉塗覆 万法’化學洛汽澱積,冑漿加強之化學蒸汽澱積及噴濺。 又’如果欲將該材料形成圖型和㈣,則它係經由該項 技藝中所熟知之技術予以實施。如前,其包括乾蝕刻,澄 蚀刻及/或雷射燒蝕。 然後採無定形碳化矽塗層沉積在犧牲材料上。沉積此塗 層以便Έ接觸電導體的邊緣上之無定形碳切塗層,而藉 以包膠犧牲材料。此情形顯示於圖7中,Λ中將碳化矽; (10)沉積在犧牲材料⑼上並接觸電導體上之塗層⑹。 ”通:’此等塗層係經由一種方法予以形成,&方法包括 沉,無定形竣化衫在該f置的整個頂表面上如圖6中經由 數子⑴)所不。然後將此無定形碳化矽形成圖型並蝕刻而 留下塗層⑽在該犧牲材料上。然而,亦考慮其他相當之 万法例如形成圖型之沉積。各種材料及沉積並蚀刻犧牲材 ----;----Ί裝------訂------ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 經濟部中央標^局員工消費合作社印製 A7 '—______ B7 五、發明説明( 料上足塗層的方法並無重要性且許多在該項技藝中係已知 者通#,此等與關於形成先前碳化妙塗層上文中所述去 相同。 考 其’人,形成一個導電橋,此橋電連接各個電導體。如圖 8中所TF,將此橋(12)形成在2電導體(2)上及蓋覆犧牲材科 (10)之典定形碳化矽塗層上。用以形成此橋的材料和方法 在孩項技藝中係熟知且通常與上文中所述,於形成電導體 時所使用者相同。 fl 然後,几積操定形碳化矽而蓋覆該導電之橋。此在圖9中 顯示成塗層(13)。亦,此可經由選擇性沉積或經由沉積和蝕 刻,爲之。各種材料及沉積和蝕刻導電橋上的塗層之方法 並無重要性且許多在該項技藝中係熟知者。通常,此等與 關=形成先前之碳化矽塗層而在上文中所述者相同。、 最後,將犧牲材料蝕刻而留下空氣橋。此顯示於圖中 2芏隙(14)。蝕刻的方法亦無重要性,且可以使用該項技 藝中:熟知之任何方法只要將触刻限制在犧牲材料^。舉 例而§,此等包括乾蝕刻,溼蝕刻及/或雷射燒蝕。 所產生之裝置具有所需要之空氣橋如圖〗〇中所示。然而 ’ ^外,本發明的空氣橋具有保護電導體之碳化矽。此方 式提供一個氣密之屏障而抑制由於腐蝕所造成之退化以及 一個物理障壁而防止短路(如果物理變更該橋則可能產生) -10- 本紙張尺度( C\.s ) Λ4坭格(210X297公趁)' (請先閱讀背面之注意事項再填寫本頁j Ί 裝------訂------:d----- - -I -I .
Claims (1)
- 508719 、申請專利範圍 一種在電子裝置上形成空氣橋之方法,其包括. 形成第一個電導體和—個八 個刀開疋第二個電導體在一電 子裝置(丨)上,此等電導體( 电 ,, 艰u)具有邊緣Η),此等邊緣側 向相互接鄰並藉由空陳(3)予以分隔: ^ 1 形成第一個無定形碳化石夕塗層⑹在各電導體之邊緣上 ’彼等係側向相互接都’因此使一個空隙留下… 隙的大小係藉由塗層的厚度(7)予以減少; 乂二 沉積-種犧牲材料(9)在各電導體的側向接鄰之無定形 碳化矽塗覆之邊緣間的空隙中; 沉積第二個無定形碳化衫塗層⑴)以蓋覆儀牲材料, 这塗層接觸電導體邊緣上之無定形碳化矽塗層而包覆 牲材料; 沉積一個導電橋(12),其係電連接第一個與第二個電 導體,將該橋沉積在第一個與第二個電導體上而無定形 碳化矽塗層則蓋覆犧牲材料; 沉積第三個無定形碳化矽塗層(丨3)而蓋覆該導電橋; 及 蝕刻犧牲材料而留下空氣橋。 經濟部中央標準局員工消費合作社印裝 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210Χ297公釐)
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ATE358330T1 (de) * | 2003-12-10 | 2007-04-15 | Freescale Semiconductor Inc | Verfahren um ein element herzustellen welches einen von magnetischem material umgebenen elektrischen leiter enthält |
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JP5072417B2 (ja) * | 2007-04-23 | 2012-11-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
US7964442B2 (en) * | 2007-10-09 | 2011-06-21 | Applied Materials, Inc. | Methods to obtain low k dielectric barrier with superior etch resistivity |
JP2013089859A (ja) * | 2011-10-20 | 2013-05-13 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4756977A (en) | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
JP2703773B2 (ja) * | 1988-04-14 | 1998-01-26 | シャープ株式会社 | 半導体装置の製造方法 |
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
JPH02177550A (ja) * | 1988-12-28 | 1990-07-10 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2856778B2 (ja) * | 1989-09-07 | 1999-02-10 | 株式会社東芝 | 半導体装置の配線構造 |
JPH04268750A (ja) * | 1991-02-25 | 1992-09-24 | Toshiba Corp | 半導体集積回路 |
US5374792A (en) * | 1993-01-04 | 1994-12-20 | General Electric Company | Micromechanical moving structures including multiple contact switching system |
US5353498A (en) * | 1993-02-08 | 1994-10-11 | General Electric Company | Method for fabricating an integrated circuit module |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5461003A (en) * | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
US5674758A (en) * | 1995-06-06 | 1997-10-07 | Regents Of The University Of California | Silicon on insulator achieved using electrochemical etching |
DE69726718T2 (de) * | 1997-07-31 | 2004-10-07 | St Microelectronics Srl | Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden |
-
1996
- 1996-10-11 TW TW085112418A patent/TW308719B/zh active
- 1996-10-16 DE DE69627954T patent/DE69627954T2/de not_active Expired - Fee Related
- 1996-10-16 EP EP96307505A patent/EP0771026B1/en not_active Expired - Lifetime
- 1996-10-21 JP JP8277686A patent/JPH09172066A/ja active Pending
- 1996-10-23 KR KR1019960047594A patent/KR100415338B1/ko not_active IP Right Cessation
-
1997
- 1997-08-11 US US08/999,951 patent/US6268262B1/en not_active Expired - Fee Related
Also Published As
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---|---|
DE69627954D1 (de) | 2003-06-12 |
EP0771026A2 (en) | 1997-05-02 |
EP0771026A3 (en) | 1998-06-10 |
US6268262B1 (en) | 2001-07-31 |
JPH09172066A (ja) | 1997-06-30 |
EP0771026B1 (en) | 2003-05-07 |
KR970023839A (ko) | 1997-05-30 |
KR100415338B1 (ko) | 2004-04-13 |
DE69627954T2 (de) | 2004-02-19 |
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