JPH09172006A - 半導体素子の素子分離膜の形成方法 - Google Patents
半導体素子の素子分離膜の形成方法Info
- Publication number
- JPH09172006A JPH09172006A JP8309271A JP30927196A JPH09172006A JP H09172006 A JPH09172006 A JP H09172006A JP 8309271 A JP8309271 A JP 8309271A JP 30927196 A JP30927196 A JP 30927196A JP H09172006 A JPH09172006 A JP H09172006A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- pattern
- material layer
- resistant material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000012528 membrane Substances 0.000 title claims 2
- 238000000926 separation method Methods 0.000 title claims 2
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000002955 isolation Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 30
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract 5
- 239000003963 antioxidant agent Substances 0.000 claims description 37
- 230000003078 antioxidant effect Effects 0.000 claims description 37
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 238000001039 wet etching Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 2
- 241000293849 Cordylanthus Species 0.000 abstract description 10
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950044268A KR0165483B1 (ko) | 1995-11-28 | 1995-11-28 | 반도체소자의 소자분리막 형성방법 |
| KR95-44268 | 1995-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09172006A true JPH09172006A (ja) | 1997-06-30 |
Family
ID=19436057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8309271A Withdrawn JPH09172006A (ja) | 1995-11-28 | 1996-11-20 | 半導体素子の素子分離膜の形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09172006A (ko) |
| KR (1) | KR0165483B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100440266B1 (ko) * | 1997-12-31 | 2004-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 필드 산화막 형성 방법 |
-
1995
- 1995-11-28 KR KR1019950044268A patent/KR0165483B1/ko not_active IP Right Cessation
-
1996
- 1996-11-20 JP JP8309271A patent/JPH09172006A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR970030643A (ko) | 1997-06-26 |
| KR0165483B1 (ko) | 1999-02-01 |
Similar Documents
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| US5714414A (en) | Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate | |
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| KR100223758B1 (ko) | 반도체 소자의 소자 분리 산화막 형성방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040203 |