JPH0883914A - 多結晶半導体装置及びその製造方法 - Google Patents
多結晶半導体装置及びその製造方法Info
- Publication number
- JPH0883914A JPH0883914A JP22016694A JP22016694A JPH0883914A JP H0883914 A JPH0883914 A JP H0883914A JP 22016694 A JP22016694 A JP 22016694A JP 22016694 A JP22016694 A JP 22016694A JP H0883914 A JPH0883914 A JP H0883914A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor layer
- polycrystalline semiconductor
- film
- energy density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000001257 hydrogen Substances 0.000 claims abstract description 91
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 91
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 80
- 238000009826 distribution Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 128
- 239000010410 layer Substances 0.000 description 96
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 238000005224 laser annealing Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000001678 irradiating effect Effects 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 238000002679 ablation Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22016694A JPH0883914A (ja) | 1994-09-14 | 1994-09-14 | 多結晶半導体装置及びその製造方法 |
| KR1019950030003A KR0170467B1 (ko) | 1994-09-14 | 1995-09-14 | 비단결정 반도체 장치 및 그 제조 방법 |
| TW084110280A TW289166B (bg) | 1994-09-14 | 1995-10-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22016694A JPH0883914A (ja) | 1994-09-14 | 1994-09-14 | 多結晶半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0883914A true JPH0883914A (ja) | 1996-03-26 |
Family
ID=16746925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22016694A Pending JPH0883914A (ja) | 1994-09-14 | 1994-09-14 | 多結晶半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0883914A (bg) |
| KR (1) | KR0170467B1 (bg) |
| TW (1) | TW289166B (bg) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001051296A (ja) * | 1999-08-06 | 2001-02-23 | Seiko Epson Corp | 薄膜デバイス装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板の製造方法、アクティブマトリクス基板および電気光学装置 |
| JP2005175476A (ja) * | 2003-12-06 | 2005-06-30 | Samsung Electronics Co Ltd | 多結晶シリコン薄膜の製造方法およびそれを利用したトランジスタの製造方法 |
-
1994
- 1994-09-14 JP JP22016694A patent/JPH0883914A/ja active Pending
-
1995
- 1995-09-14 KR KR1019950030003A patent/KR0170467B1/ko not_active IP Right Cessation
- 1995-10-02 TW TW084110280A patent/TW289166B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001051296A (ja) * | 1999-08-06 | 2001-02-23 | Seiko Epson Corp | 薄膜デバイス装置の製造方法、薄膜デバイス装置、アクティブマトリクス基板の製造方法、アクティブマトリクス基板および電気光学装置 |
| JP2005175476A (ja) * | 2003-12-06 | 2005-06-30 | Samsung Electronics Co Ltd | 多結晶シリコン薄膜の製造方法およびそれを利用したトランジスタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0170467B1 (ko) | 1999-02-01 |
| TW289166B (bg) | 1996-10-21 |
| KR960012566A (ko) | 1996-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6020224A (en) | Method for making thin film transistor | |
| US20060084204A1 (en) | Method of manufacturing a thin film transistor | |
| US5834071A (en) | Method for forming a thin film transistor | |
| JP3599355B2 (ja) | アクティブマトリクス基板の製造方法及び液晶ディスプレイの製造方法 | |
| JPH07153961A (ja) | 順スタガ型薄膜トランジスタ及びその製造方法 | |
| JPH0758339A (ja) | 半導体装置およびその作製方法 | |
| US20050161676A1 (en) | Thin film semiconductor device having arrayed configuration of semiconductor crystals | |
| KR20030069779A (ko) | 박막트랜지스터 및 그 제조방법 | |
| KR100700681B1 (ko) | 반도체박막의 결정화 방법 및 박막 반도체장치의 제조방법 | |
| EP0459836B1 (en) | Method for fabricating thin-film transistors | |
| JP2630244B2 (ja) | 薄膜トランジスタの製造方法 | |
| JP3347340B2 (ja) | 薄膜トランジスタの製造方法 | |
| JP3107345B2 (ja) | 半導体装置の製造方法 | |
| JPH0883914A (ja) | 多結晶半導体装置及びその製造方法 | |
| JPH09213965A (ja) | 半導体装置の製造方法 | |
| US20060172469A1 (en) | Method of fabricating a polycrystalline silicon thin film transistor | |
| JP3244518B2 (ja) | アクティブマトリクス基板の製造方法 | |
| JPH09246183A (ja) | 多結晶半導体膜の製造方法 | |
| JP2002110542A (ja) | Ｓｉ系半導体薄膜の製造方法、薄膜トランジスタ | |
| WO2001050516A1 (en) | Method of manufacturing a thin-film transistor | |
| JP3094542B2 (ja) | アクティブマトリクス基板の製造方法 | |
| JP2000068515A (ja) | 薄膜半導体装置の製造方法 | |
| JPH0411226A (ja) | 表示装置の製造方法 | |
| JPH0982639A (ja) | 半導体装置およびその製造方法 | |
| JP3244387B2 (ja) | 薄膜半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20020903 |