JPH08330243A - プラズマクリーニング方法及びこの方法に使用される配置領域保護体 - Google Patents
プラズマクリーニング方法及びこの方法に使用される配置領域保護体Info
- Publication number
- JPH08330243A JPH08330243A JP7156977A JP15697795A JPH08330243A JP H08330243 A JPH08330243 A JP H08330243A JP 7156977 A JP7156977 A JP 7156977A JP 15697795 A JP15697795 A JP 15697795A JP H08330243 A JPH08330243 A JP H08330243A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- gas
- stage
- substrate stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7156977A JPH08330243A (ja) | 1995-05-30 | 1995-05-30 | プラズマクリーニング方法及びこの方法に使用される配置領域保護体 |
TW085106124A TW295772B (enrdf_load_stackoverflow) | 1995-05-30 | 1996-05-23 | |
KR1019960018647A KR100262883B1 (ko) | 1995-05-30 | 1996-05-30 | 플라즈마 크리닝 방법 및 플라즈마 처리장치 |
US09/374,112 US6283130B1 (en) | 1995-05-30 | 1999-08-16 | Plasma cleaning method and placement area protector used in the method |
US09/874,325 US6769439B2 (en) | 1995-05-30 | 2001-06-06 | Plasma cleaning method and placement area protector used in the method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7156977A JPH08330243A (ja) | 1995-05-30 | 1995-05-30 | プラズマクリーニング方法及びこの方法に使用される配置領域保護体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08330243A true JPH08330243A (ja) | 1996-12-13 |
Family
ID=15639476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7156977A Pending JPH08330243A (ja) | 1995-05-30 | 1995-05-30 | プラズマクリーニング方法及びこの方法に使用される配置領域保護体 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH08330243A (enrdf_load_stackoverflow) |
KR (1) | KR100262883B1 (enrdf_load_stackoverflow) |
TW (1) | TW295772B (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313289A (ja) * | 2000-01-28 | 2001-11-09 | Applied Materials Inc | 半導体ウエーハ処理システムの洗浄方法及び装置 |
JP2002212732A (ja) * | 2001-01-22 | 2002-07-31 | Anelva Corp | Cvd装置のクリーニング方法 |
US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
JP2007216095A (ja) * | 2006-02-14 | 2007-08-30 | National Institutes Of Natural Sciences | 水素貯蔵金属又は合金の初期活性化方法及び水素化方法 |
WO2010084909A1 (ja) * | 2009-01-21 | 2010-07-29 | キヤノンアネルバ株式会社 | 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置 |
WO2014142031A1 (ja) * | 2013-03-13 | 2014-09-18 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の制御方法、クリーニング方法及び半導体装置の製造方法並びに記録媒体 |
US12211737B2 (en) | 2021-08-27 | 2025-01-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning chamber for metal oxide removal |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100799815B1 (ko) * | 2002-12-18 | 2008-01-31 | 엘지노텔 주식회사 | 시스템간 버전 호환성 처리 방법 |
KR101586237B1 (ko) * | 2015-07-24 | 2016-01-19 | 주식회사 애니테이프 | 대기압 플라즈마를 이용한 압출성형재의 윤활유 제거 장치 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555184A (ja) * | 1991-08-27 | 1993-03-05 | Fujitsu Ltd | クリーニング方法 |
-
1995
- 1995-05-30 JP JP7156977A patent/JPH08330243A/ja active Pending
-
1996
- 1996-05-23 TW TW085106124A patent/TW295772B/zh not_active IP Right Cessation
- 1996-05-30 KR KR1019960018647A patent/KR100262883B1/ko not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313289A (ja) * | 2000-01-28 | 2001-11-09 | Applied Materials Inc | 半導体ウエーハ処理システムの洗浄方法及び装置 |
JP2002212732A (ja) * | 2001-01-22 | 2002-07-31 | Anelva Corp | Cvd装置のクリーニング方法 |
US8105440B2 (en) | 2001-01-22 | 2012-01-31 | Canon Anelva Corporation | Method of cleaning a CVD device |
US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
WO2003015137A3 (en) * | 2001-08-09 | 2004-03-11 | Applied Materials Inc | Pedestal with integral shield |
US6837968B2 (en) | 2001-08-09 | 2005-01-04 | Applied Materials, Inc. | Lower pedestal shield |
JP2007216095A (ja) * | 2006-02-14 | 2007-08-30 | National Institutes Of Natural Sciences | 水素貯蔵金属又は合金の初期活性化方法及び水素化方法 |
WO2010084909A1 (ja) * | 2009-01-21 | 2010-07-29 | キヤノンアネルバ株式会社 | 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置 |
WO2014142031A1 (ja) * | 2013-03-13 | 2014-09-18 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の制御方法、クリーニング方法及び半導体装置の製造方法並びに記録媒体 |
US12211737B2 (en) | 2021-08-27 | 2025-01-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning chamber for metal oxide removal |
Also Published As
Publication number | Publication date |
---|---|
KR960042935A (ko) | 1996-12-21 |
KR100262883B1 (ko) | 2000-09-01 |
TW295772B (enrdf_load_stackoverflow) | 1997-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6769439B2 (en) | Plasma cleaning method and placement area protector used in the method | |
US5454903A (en) | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization | |
JP3595608B2 (ja) | 真空処理装置、真空処理装置における真空容器内面堆積膜除去方法及び真空処理装置における真空容器内面膜堆積均一化方法 | |
WO2019003663A1 (ja) | エッチング方法およびエッチング装置 | |
JPH10212576A (ja) | スパッタリングチャンバにおける粒状物質の発生を抑制する方法 | |
KR102032617B1 (ko) | 기판 처리 장치 및 차열판 | |
JP2018195817A (ja) | プラズマ処理装置の洗浄方法 | |
JPH08330243A (ja) | プラズマクリーニング方法及びこの方法に使用される配置領域保護体 | |
JP3516523B2 (ja) | プラズマ処理装置 | |
JP3798491B2 (ja) | ドライエッチング方法 | |
JP2004186402A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2010192513A (ja) | プラズマ処理装置およびその運転方法 | |
JP2001020076A (ja) | 反応室のクリーニング方法及び装置 | |
JPH07273092A (ja) | プラズマ処理装置及びそのクリーニング方法 | |
JPH11315376A (ja) | イオン化スパッタリング装置 | |
JP3472456B2 (ja) | 真空処理装置 | |
JP3599834B2 (ja) | プラズマ処理装置 | |
JP3595885B2 (ja) | プラズマ処理方法及びプラズマ装置 | |
JPH09129611A (ja) | エッチング方法 | |
JP3595508B2 (ja) | 半導体製造装置 | |
JP2003163206A (ja) | プラズマ処理装置、プラズマ処理方法及びマルチチャンバシステム | |
JP3699504B2 (ja) | 真空処理装置 | |
TWI850625B (zh) | 電漿處理裝置、及電漿處理方法 | |
JP2003003263A (ja) | プラズマcvd装置 | |
JPH04243121A (ja) | ウエハ処理装置およびそのクリーニング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040406 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20040812 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20050202 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20050202 |