JPH08306883A - 半導体メモリ装置及びその製造方法 - Google Patents
半導体メモリ装置及びその製造方法Info
- Publication number
- JPH08306883A JPH08306883A JP8035260A JP3526096A JPH08306883A JP H08306883 A JPH08306883 A JP H08306883A JP 8035260 A JP8035260 A JP 8035260A JP 3526096 A JP3526096 A JP 3526096A JP H08306883 A JPH08306883 A JP H08306883A
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- semiconductor memory
- memory device
- conductive layer
- lower conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 239000011229 interlayer Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 14
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1995-P-011620 | 1995-05-11 | ||
| KR1019950011620A KR960043196A (ko) | 1995-05-11 | 1995-05-11 | 반도체 메모리 장치 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08306883A true JPH08306883A (ja) | 1996-11-22 |
Family
ID=19414242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8035260A Pending JPH08306883A (ja) | 1995-05-11 | 1996-02-22 | 半導体メモリ装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08306883A (ko) |
| KR (1) | KR960043196A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021158320A1 (en) * | 2020-02-04 | 2021-08-12 | Micron Technology, Inc. | Configurable resistivity for lines in a memory device |
-
1995
- 1995-05-11 KR KR1019950011620A patent/KR960043196A/ko not_active Application Discontinuation
-
1996
- 1996-02-22 JP JP8035260A patent/JPH08306883A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021158320A1 (en) * | 2020-02-04 | 2021-08-12 | Micron Technology, Inc. | Configurable resistivity for lines in a memory device |
| US11495293B2 (en) | 2020-02-04 | 2022-11-08 | Micron Technology, Inc. | Configurable resistivity for lines in a memory device |
| US12040014B2 (en) | 2020-02-04 | 2024-07-16 | Micron Technology, Inc. | Configurable resistivity for lines in a memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960043196A (ko) | 1996-12-23 |
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