JPH08288296A - 半導体製造装置の基板加熱装置 - Google Patents
半導体製造装置の基板加熱装置Info
- Publication number
- JPH08288296A JPH08288296A JP8053787A JP5378796A JPH08288296A JP H08288296 A JPH08288296 A JP H08288296A JP 8053787 A JP8053787 A JP 8053787A JP 5378796 A JP5378796 A JP 5378796A JP H08288296 A JPH08288296 A JP H08288296A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- substrate
- panel heater
- substrate heating
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 238000010438 heat treatment Methods 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000003825 pressing Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000005855 radiation Effects 0.000 description 11
- 239000000498 cooling water Substances 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8053787A JPH08288296A (ja) | 1995-02-17 | 1996-02-16 | 半導体製造装置の基板加熱装置 |
| US08/694,875 US5850071A (en) | 1996-02-16 | 1996-08-09 | Substrate heating equipment for use in a semiconductor fabricating apparatus |
| KR1019960033130A KR100245260B1 (ko) | 1996-02-16 | 1996-08-09 | 반도체 제조장치의 기판 가열장치 |
| TW85109959A TW315490B (enrdf_load_stackoverflow) | 1995-02-17 | 1996-08-15 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5337395 | 1995-02-17 | ||
| JP7-53373 | 1995-02-17 | ||
| JP8053787A JPH08288296A (ja) | 1995-02-17 | 1996-02-16 | 半導体製造装置の基板加熱装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08288296A true JPH08288296A (ja) | 1996-11-01 |
Family
ID=26394083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8053787A Pending JPH08288296A (ja) | 1995-02-17 | 1996-02-16 | 半導体製造装置の基板加熱装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08288296A (enrdf_load_stackoverflow) |
| TW (1) | TW315490B (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288943A (ja) * | 1998-04-02 | 1999-10-19 | Kokusai Electric Co Ltd | 基板加熱装置 |
| JP2000031070A (ja) * | 1998-07-16 | 2000-01-28 | Ulvac Corp | ａ−Ｓｉ薄膜形成装置 |
| WO2000034986A1 (en) * | 1998-12-10 | 2000-06-15 | Steag Rtp Systems, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| JP2001068434A (ja) * | 1999-08-25 | 2001-03-16 | Ebara Corp | 銅めっき装置 |
| JP2005537632A (ja) * | 2002-02-11 | 2005-12-08 | アプライド マテリアルズ インコーポレイテッド | 加熱基板支持体 |
| KR100572304B1 (ko) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | 반도체장치 제조용 증착설비 |
| JP2014130900A (ja) * | 2012-12-28 | 2014-07-10 | Shimadzu Corp | 加熱装置 |
| KR102435555B1 (ko) * | 2022-04-07 | 2022-08-23 | 주식회사 세미노바 | 웨이퍼 pvd 공정용 디가스 장치 |
| KR20230132084A (ko) * | 2022-03-08 | 2023-09-15 | 주식회사 한화 | 기판과 히터를 거치할 수 있는 일체형 지지대 및 이를 포함하는 기판용 열처리장치 |
-
1996
- 1996-02-16 JP JP8053787A patent/JPH08288296A/ja active Pending
- 1996-08-15 TW TW85109959A patent/TW315490B/zh not_active IP Right Cessation
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288943A (ja) * | 1998-04-02 | 1999-10-19 | Kokusai Electric Co Ltd | 基板加熱装置 |
| JP2000031070A (ja) * | 1998-07-16 | 2000-01-28 | Ulvac Corp | ａ−Ｓｉ薄膜形成装置 |
| KR100572304B1 (ko) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | 반도체장치 제조용 증착설비 |
| WO2000034986A1 (en) * | 1998-12-10 | 2000-06-15 | Steag Rtp Systems, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6610967B2 (en) | 1998-12-10 | 2003-08-26 | Mattson Technology, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6727474B2 (en) | 1998-12-10 | 2004-04-27 | Mattson Technology, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| JP2001068434A (ja) * | 1999-08-25 | 2001-03-16 | Ebara Corp | 銅めっき装置 |
| JP2005537632A (ja) * | 2002-02-11 | 2005-12-08 | アプライド マテリアルズ インコーポレイテッド | 加熱基板支持体 |
| JP2014130900A (ja) * | 2012-12-28 | 2014-07-10 | Shimadzu Corp | 加熱装置 |
| KR20230132084A (ko) * | 2022-03-08 | 2023-09-15 | 주식회사 한화 | 기판과 히터를 거치할 수 있는 일체형 지지대 및 이를 포함하는 기판용 열처리장치 |
| KR102435555B1 (ko) * | 2022-04-07 | 2022-08-23 | 주식회사 세미노바 | 웨이퍼 pvd 공정용 디가스 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW315490B (enrdf_load_stackoverflow) | 1997-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100245260B1 (ko) | 반도체 제조장치의 기판 가열장치 | |
| CN1135905C (zh) | 炉侧壁温度控制系统 | |
| US5778968A (en) | Method for heating or cooling wafers | |
| US5716207A (en) | Heating furnace | |
| US6751999B2 (en) | Method and apparatus for forming metallic materials | |
| JPH11506821A (ja) | 不活性ガス基板温度調節装置及びその方法 | |
| JPH01169293A (ja) | 板状体を媒介とする熱エネルギ伝達方法及び装置 | |
| JPH08288296A (ja) | 半導体製造装置の基板加熱装置 | |
| JPH1095089A (ja) | ラミネート装置 | |
| JPS63148623A (ja) | 基板温度測定装置 | |
| JPH09232297A (ja) | 熱処理装置 | |
| JP7441905B2 (ja) | 基板処理装置 | |
| JPH1064921A (ja) | 半導体製造装置の基板加熱装置 | |
| JP6535828B1 (ja) | 基板処理装置 | |
| KR100831906B1 (ko) | 온도 제어실 및 그 온도 제어실을 이용한 진공 처리 장치 | |
| JP3096965B2 (ja) | 基板加熱方法及び基板加熱炉 | |
| JP2631370B2 (ja) | 薄板状体の加熱装置 | |
| KR100839678B1 (ko) | 열 처리 방법 및 열 처리 장치 | |
| CN1177830A (zh) | 半导体晶片热处理设备 | |
| KR930010481B1 (ko) | 진공가열 처리장치 | |
| KR102663828B1 (ko) | 기판처리장치 및 이를 이용한 기판처리방법 | |
| JPH08139084A (ja) | 基板加熱装置 | |
| KR100773285B1 (ko) | 진공처리실, 플라스마 디스플레이장치의 제조장치 및 플라스마 디스플레이장치의 제조방법 | |
| JPH05160046A (ja) | 基板加熱方法及びその装置 | |
| JPH06260433A (ja) | 半導体製造装置 |