JPH08162636A - 電界効果素子およびその電極形成方法 - Google Patents
電界効果素子およびその電極形成方法Info
- Publication number
- JPH08162636A JPH08162636A JP6315388A JP31538894A JPH08162636A JP H08162636 A JPH08162636 A JP H08162636A JP 6315388 A JP6315388 A JP 6315388A JP 31538894 A JP31538894 A JP 31538894A JP H08162636 A JPH08162636 A JP H08162636A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- region
- insulating film
- wiring
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000005669 field effect Effects 0.000 title claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000002955 isolation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 150000002739 metals Chemical class 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940032826A KR0149889B1 (ko) | 1994-12-05 | 1994-12-05 | 전계효과 소자의 전극 형성 방법 |
| KR94-32826 | 1994-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08162636A true JPH08162636A (ja) | 1996-06-21 |
Family
ID=19400352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6315388A Pending JPH08162636A (ja) | 1994-12-05 | 1994-12-19 | 電界効果素子およびその電極形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08162636A (ko) |
| KR (1) | KR0149889B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737704B1 (en) * | 1999-09-13 | 2004-05-18 | Shindengen Electric Manufacturing Co., Ltd. | Transistor and method of manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226965A (ja) * | 1987-03-17 | 1988-09-21 | Nec Corp | 半導体装置 |
| JPH021942A (ja) * | 1988-06-09 | 1990-01-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
1994
- 1994-12-05 KR KR1019940032826A patent/KR0149889B1/ko not_active IP Right Cessation
- 1994-12-19 JP JP6315388A patent/JPH08162636A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226965A (ja) * | 1987-03-17 | 1988-09-21 | Nec Corp | 半導体装置 |
| JPH021942A (ja) * | 1988-06-09 | 1990-01-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737704B1 (en) * | 1999-09-13 | 2004-05-18 | Shindengen Electric Manufacturing Co., Ltd. | Transistor and method of manufacturing the same |
| US6872611B2 (en) | 1999-09-13 | 2005-03-29 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960026751A (ko) | 1996-07-22 |
| KR0149889B1 (ko) | 1999-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100278273B1 (ko) | 반도체장치의콘택홀형성방법 | |
| US4933297A (en) | Method for etching windows having different depths | |
| JPH1092933A (ja) | 半導体装置の製造方法 | |
| JP2000216400A (ja) | 半導体集積回路及びその製造方法 | |
| JPH0629317A (ja) | 半導体装置およびその製造方法 | |
| KR0120572B1 (ko) | 반도체 소자 및 그 제조방법 | |
| US5939758A (en) | Semiconductor device with gate electrodes having conductive films | |
| JPH11330262A (ja) | 半導体装置の製造方法 | |
| JPH08162636A (ja) | 電界効果素子およびその電極形成方法 | |
| JPH10144918A (ja) | 半導体装置及びその製造方法 | |
| JPH08181223A (ja) | 半導体装置の製造方法 | |
| JP2817226B2 (ja) | 半導体装置の製造方法 | |
| KR100219549B1 (ko) | 랜딩 패드를 갖는 반도체 소자의 제조방법 | |
| KR100273314B1 (ko) | 반도체 장치 제조방법 | |
| JPH05259182A (ja) | 自己整列した接点窓 | |
| KR100290486B1 (ko) | 반도체 소자의 트랜지스터 제조 방법 | |
| KR0140726B1 (ko) | 반도체 소자의 제조방법 | |
| KR0167669B1 (ko) | 반도체장치의 제조방법 | |
| KR0167662B1 (ko) | 반도체장치의 제조방법 | |
| JP2985202B2 (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPS62128542A (ja) | 半導体装置の製造方法 | |
| JP2000068228A (ja) | 半導体装置およびその製造方法 | |
| JPH02156542A (ja) | 半導体装置およびその製造方法 | |
| JP2002118166A (ja) | 半導体装置及びその製造方法 | |
| KR970023733A (ko) | 셀프얼라인 소스/드레인 콘택 구조를 가지는 반도체장치의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980519 |