JPH07263187A - プラズマ処理装置 - Google Patents
プラズマ処理装置Info
- Publication number
- JPH07263187A JPH07263187A JP6048287A JP4828794A JPH07263187A JP H07263187 A JPH07263187 A JP H07263187A JP 6048287 A JP6048287 A JP 6048287A JP 4828794 A JP4828794 A JP 4828794A JP H07263187 A JPH07263187 A JP H07263187A
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- processing apparatus
- plasma processing
- plasma
- slot antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009832 plasma treatment Methods 0.000 title abstract 2
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 238000001312 dry etching Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguide Aerials (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6048287A JPH07263187A (ja) | 1994-03-18 | 1994-03-18 | プラズマ処理装置 |
TW084102171A TW265508B (zh) | 1994-03-18 | 1995-03-06 | |
KR1019950005081A KR950034579A (ko) | 1994-03-18 | 1995-03-13 | 플라즈마 처리방법 및 장치 |
EP95103754A EP0674334A1 (en) | 1994-03-18 | 1995-03-15 | Plasma processing method and apparatus |
SG1995000123A SG30311A1 (en) | 1994-03-18 | 1995-03-17 | Plasma processing method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6048287A JPH07263187A (ja) | 1994-03-18 | 1994-03-18 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07263187A true JPH07263187A (ja) | 1995-10-13 |
Family
ID=12799229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6048287A Pending JPH07263187A (ja) | 1994-03-18 | 1994-03-18 | プラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0674334A1 (zh) |
JP (1) | JPH07263187A (zh) |
KR (1) | KR950034579A (zh) |
TW (1) | TW265508B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050613A (ja) * | 2000-08-02 | 2002-02-15 | Tokyo Electron Ltd | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
US6405037B1 (en) | 1995-12-11 | 2002-06-11 | Openwave Systems Inc. | Method and architecture for an interactive two-way data communication network |
US6473609B1 (en) | 1995-12-11 | 2002-10-29 | Openwave Systems Inc. | Method and architecture for interactive two-way communication devices to interact with a network |
US6742022B1 (en) | 1995-12-11 | 2004-05-25 | Openwave Systems Inc. | Centralized service management system for two-way interactive communication devices in data networks |
WO2007143301A3 (en) * | 2006-05-02 | 2008-10-02 | Bwxt Y 12 Llc | Controlled zone microwave plasma system |
JP2010140679A (ja) * | 2008-12-09 | 2010-06-24 | Tohoku Univ | 金属表面波計測装置および金属表面波計測方法 |
JP2011003912A (ja) * | 2010-07-23 | 2011-01-06 | Tokyo Electron Ltd | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP2011176147A (ja) * | 2010-02-24 | 2011-09-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2018006256A (ja) * | 2016-07-07 | 2018-01-11 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
CN113193312A (zh) * | 2021-04-25 | 2021-07-30 | 电子科技大学 | 圆波导TE0n模式超宽带输出窗结构 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3739137B2 (ja) * | 1996-06-18 | 2006-01-25 | 日本電気株式会社 | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
DE69736081T2 (de) | 1996-09-27 | 2007-01-11 | Surface Technoloy Systems Plc | Plasmabearbeitungsvorrichtung |
US6534922B2 (en) | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
WO1999012184A2 (en) * | 1997-09-05 | 1999-03-11 | Alcad Pro, Inc. | Microwave power applicator for generating reactive chemical species from gaseous reagent species |
JP3625197B2 (ja) | 2001-01-18 | 2005-03-02 | 東京エレクトロン株式会社 | プラズマ装置およびプラズマ生成方法 |
JP4163432B2 (ja) * | 2002-03-26 | 2008-10-08 | 矢崎総業株式会社 | プラズマ処理装置 |
CN112967920B (zh) * | 2021-02-01 | 2022-07-19 | 湖南红太阳光电科技有限公司 | 一种微波等离子体刻蚀装置及方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
FR2693619B1 (fr) * | 1992-07-08 | 1994-10-07 | Valeo Vision | Dispositif pour le dépôt de polymère par l'intermédiaire d'un plasma excité par micro-ondes. |
JPH07142444A (ja) * | 1993-11-12 | 1995-06-02 | Hitachi Ltd | マイクロ波プラズマ処理装置および処理方法 |
-
1994
- 1994-03-18 JP JP6048287A patent/JPH07263187A/ja active Pending
-
1995
- 1995-03-06 TW TW084102171A patent/TW265508B/zh active
- 1995-03-13 KR KR1019950005081A patent/KR950034579A/ko not_active Application Discontinuation
- 1995-03-15 EP EP95103754A patent/EP0674334A1/en not_active Withdrawn
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6405037B1 (en) | 1995-12-11 | 2002-06-11 | Openwave Systems Inc. | Method and architecture for an interactive two-way data communication network |
US6473609B1 (en) | 1995-12-11 | 2002-10-29 | Openwave Systems Inc. | Method and architecture for interactive two-way communication devices to interact with a network |
US6625447B1 (en) | 1995-12-11 | 2003-09-23 | Openwave Systems Inc. | Method and architecture for an interactive two-way data communication network |
US6742022B1 (en) | 1995-12-11 | 2004-05-25 | Openwave Systems Inc. | Centralized service management system for two-way interactive communication devices in data networks |
US7003284B2 (en) | 1995-12-11 | 2006-02-21 | Openwave Systems Inc. | Method and architecture for interactive two-way communication devices to interact with a network |
US7054626B2 (en) | 1995-12-11 | 2006-05-30 | Openwave Systems Inc. | Method and architecture for an interactive two-way data communication network |
US7807019B2 (en) | 2000-08-02 | 2010-10-05 | Tokyo Electron Limited | Radial antenna and plasma processing apparatus comprising the same |
JP4593741B2 (ja) * | 2000-08-02 | 2010-12-08 | 東京エレクトロン株式会社 | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP2002050613A (ja) * | 2000-08-02 | 2002-02-15 | Tokyo Electron Ltd | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
US7603963B2 (en) * | 2006-05-02 | 2009-10-20 | Babcock & Wilcox Technical Services Y-12, Llc | Controlled zone microwave plasma system |
WO2007143301A3 (en) * | 2006-05-02 | 2008-10-02 | Bwxt Y 12 Llc | Controlled zone microwave plasma system |
US8028654B2 (en) | 2006-05-02 | 2011-10-04 | Babcock & Wilcox Technical Services Y-12, Llc | Planar controlled zone microwave plasma system |
JP2010140679A (ja) * | 2008-12-09 | 2010-06-24 | Tohoku Univ | 金属表面波計測装置および金属表面波計測方法 |
JP2011176147A (ja) * | 2010-02-24 | 2011-09-08 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2011003912A (ja) * | 2010-07-23 | 2011-01-06 | Tokyo Electron Ltd | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP2018006256A (ja) * | 2016-07-07 | 2018-01-11 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
CN113193312A (zh) * | 2021-04-25 | 2021-07-30 | 电子科技大学 | 圆波导TE0n模式超宽带输出窗结构 |
CN113193312B (zh) * | 2021-04-25 | 2022-05-03 | 电子科技大学 | 圆波导TE0n模式超宽带输出窗结构 |
Also Published As
Publication number | Publication date |
---|---|
TW265508B (zh) | 1995-12-11 |
EP0674334A1 (en) | 1995-09-27 |
KR950034579A (ko) | 1995-12-28 |
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