TW265508B - - Google Patents
Info
- Publication number
- TW265508B TW265508B TW084102171A TW84102171A TW265508B TW 265508 B TW265508 B TW 265508B TW 084102171 A TW084102171 A TW 084102171A TW 84102171 A TW84102171 A TW 84102171A TW 265508 B TW265508 B TW 265508B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Waveguide Aerials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6048287A JPH07263187A (ja) | 1994-03-18 | 1994-03-18 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW265508B true TW265508B (zh) | 1995-12-11 |
Family
ID=12799229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084102171A TW265508B (zh) | 1994-03-18 | 1995-03-06 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0674334A1 (zh) |
JP (1) | JPH07263187A (zh) |
KR (1) | KR950034579A (zh) |
TW (1) | TW265508B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5809415A (en) | 1995-12-11 | 1998-09-15 | Unwired Planet, Inc. | Method and architecture for an interactive two-way data communication network |
US6742022B1 (en) | 1995-12-11 | 2004-05-25 | Openwave Systems Inc. | Centralized service management system for two-way interactive communication devices in data networks |
US6473609B1 (en) | 1995-12-11 | 2002-10-29 | Openwave Systems Inc. | Method and architecture for interactive two-way communication devices to interact with a network |
JP3739137B2 (ja) * | 1996-06-18 | 2006-01-25 | 日本電気株式会社 | プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置 |
US6534922B2 (en) | 1996-09-27 | 2003-03-18 | Surface Technology Systems, Plc | Plasma processing apparatus |
EP1324371B1 (en) * | 1996-09-27 | 2006-06-07 | Surface Technology Systems Plc | Plasma processing apparatus |
WO1999012184A2 (en) * | 1997-09-05 | 1999-03-11 | Alcad Pro, Inc. | Microwave power applicator for generating reactive chemical species from gaseous reagent species |
JP4593741B2 (ja) | 2000-08-02 | 2010-12-08 | 東京エレクトロン株式会社 | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP3625197B2 (ja) | 2001-01-18 | 2005-03-02 | 東京エレクトロン株式会社 | プラズマ装置およびプラズマ生成方法 |
JP4163432B2 (ja) * | 2002-03-26 | 2008-10-08 | 矢崎総業株式会社 | プラズマ処理装置 |
US7603963B2 (en) * | 2006-05-02 | 2009-10-20 | Babcock & Wilcox Technical Services Y-12, Llc | Controlled zone microwave plasma system |
JP2010140679A (ja) * | 2008-12-09 | 2010-06-24 | Tohoku Univ | 金属表面波計測装置および金属表面波計測方法 |
JP5667368B2 (ja) * | 2010-02-24 | 2015-02-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5255024B2 (ja) * | 2010-07-23 | 2013-08-07 | 東京エレクトロン株式会社 | ラジアルアンテナ及びそれを用いたプラズマ処理装置 |
JP6700127B2 (ja) * | 2016-07-07 | 2020-05-27 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
CN112967920B (zh) * | 2021-02-01 | 2022-07-19 | 湖南红太阳光电科技有限公司 | 一种微波等离子体刻蚀装置及方法 |
CN113193312B (zh) * | 2021-04-25 | 2022-05-03 | 电子科技大学 | 圆波导TE0n模式超宽带输出窗结构 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
FR2693619B1 (fr) * | 1992-07-08 | 1994-10-07 | Valeo Vision | Dispositif pour le dépôt de polymère par l'intermédiaire d'un plasma excité par micro-ondes. |
JPH07142444A (ja) * | 1993-11-12 | 1995-06-02 | Hitachi Ltd | マイクロ波プラズマ処理装置および処理方法 |
-
1994
- 1994-03-18 JP JP6048287A patent/JPH07263187A/ja active Pending
-
1995
- 1995-03-06 TW TW084102171A patent/TW265508B/zh active
- 1995-03-13 KR KR1019950005081A patent/KR950034579A/ko not_active Application Discontinuation
- 1995-03-15 EP EP95103754A patent/EP0674334A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR950034579A (ko) | 1995-12-28 |
JPH07263187A (ja) | 1995-10-13 |
EP0674334A1 (en) | 1995-09-27 |