JPH0720918Y2 - 不揮発性半導体メモリ装置 - Google Patents
不揮発性半導体メモリ装置Info
- Publication number
- JPH0720918Y2 JPH0720918Y2 JP1987005705U JP570587U JPH0720918Y2 JP H0720918 Y2 JPH0720918 Y2 JP H0720918Y2 JP 1987005705 U JP1987005705 U JP 1987005705U JP 570587 U JP570587 U JP 570587U JP H0720918 Y2 JPH0720918 Y2 JP H0720918Y2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- oxide film
- floating gate
- control gate
- floating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987005705U JPH0720918Y2 (ja) | 1987-01-19 | 1987-01-19 | 不揮発性半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987005705U JPH0720918Y2 (ja) | 1987-01-19 | 1987-01-19 | 不揮発性半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63114045U JPS63114045U (enrdf_load_stackoverflow) | 1988-07-22 |
| JPH0720918Y2 true JPH0720918Y2 (ja) | 1995-05-15 |
Family
ID=30787540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987005705U Expired - Lifetime JPH0720918Y2 (ja) | 1987-01-19 | 1987-01-19 | 不揮発性半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720918Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4605956B2 (ja) * | 2001-09-19 | 2011-01-05 | 株式会社リコー | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58165382A (ja) * | 1982-03-09 | 1983-09-30 | ア−ルシ−エ− コ−ポレ−ション | 浮動ゲ−ト・メモリ装置 |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
-
1987
- 1987-01-19 JP JP1987005705U patent/JPH0720918Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63114045U (enrdf_load_stackoverflow) | 1988-07-22 |
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