JPH069025Y2 - 化合物半導体単結晶製造装置 - Google Patents

化合物半導体単結晶製造装置

Info

Publication number
JPH069025Y2
JPH069025Y2 JP15187188U JP15187188U JPH069025Y2 JP H069025 Y2 JPH069025 Y2 JP H069025Y2 JP 15187188 U JP15187188 U JP 15187188U JP 15187188 U JP15187188 U JP 15187188U JP H069025 Y2 JPH069025 Y2 JP H069025Y2
Authority
JP
Japan
Prior art keywords
furnace
single crystal
melt
compound semiconductor
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15187188U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0274371U (en, 2012
Inventor
清治 水庭
徹 栗原
昭夫 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP15187188U priority Critical patent/JPH069025Y2/ja
Publication of JPH0274371U publication Critical patent/JPH0274371U/ja
Application granted granted Critical
Publication of JPH069025Y2 publication Critical patent/JPH069025Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15187188U 1988-11-22 1988-11-22 化合物半導体単結晶製造装置 Expired - Lifetime JPH069025Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15187188U JPH069025Y2 (ja) 1988-11-22 1988-11-22 化合物半導体単結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15187188U JPH069025Y2 (ja) 1988-11-22 1988-11-22 化合物半導体単結晶製造装置

Publications (2)

Publication Number Publication Date
JPH0274371U JPH0274371U (en, 2012) 1990-06-06
JPH069025Y2 true JPH069025Y2 (ja) 1994-03-09

Family

ID=31426295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15187188U Expired - Lifetime JPH069025Y2 (ja) 1988-11-22 1988-11-22 化合物半導体単結晶製造装置

Country Status (1)

Country Link
JP (1) JPH069025Y2 (en, 2012)

Also Published As

Publication number Publication date
JPH0274371U (en, 2012) 1990-06-06

Similar Documents

Publication Publication Date Title
US5441011A (en) Sublimation growth of single crystal SiC
JPH11508531A (ja) Ｃｖｄによって目的物をエピタキシアル成長させる装置と方法
EP0927777B1 (en) Method and apparatus of production of semiconductor crystal
JPH07172998A (ja) 炭化ケイ素単結晶の製造方法
JP4052678B2 (ja) 大形炭化珪素単結晶成長装置
JPH069025Y2 (ja) 化合物半導体単結晶製造装置
JPH10218699A (ja) 化合物半導体単結晶の成長方法
JP4144349B2 (ja) 化合物半導体製造装置
JPH0557239B2 (en, 2012)
JPH06298600A (ja) ＳｉＣ単結晶の成長方法
JP3717562B2 (ja) 単結晶の製造方法
JP4778150B2 (ja) ＺｎＴｅ系化合物半導体単結晶の製造方法およびＺｎＴｅ系化合物半導体単結晶
JPH0316988A (ja) 化合物半導体単結晶製造装置
JP3724870B2 (ja) 熱分解窒化ホウ素ルツボ
JP2612897B2 (ja) 単結晶の育成装置
JP2773441B2 (ja) ＧａＡｓ単結晶の製造方法
JP2001080987A (ja) 化合物半導体結晶の製造装置及びそれを用いた製造方法
JP3806793B2 (ja) 化合物半導体単結晶の製造方法
JPH0733303B2 (ja) 結晶成長装置
JPH03247581A (ja) ＧａＡｓ単結晶の製造方法
JPH0449185Y2 (en, 2012)
JPH08319189A (ja) 単結晶の製造方法及び単結晶製造装置
JPH05319973A (ja) 単結晶製造装置
JP4155085B2 (ja) 化合物半導体単結晶の製造方法
JPH03193688A (ja) 化合物半導体単結晶製造方法