JPH0666354B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0666354B2 JPH0666354B2 JP61179675A JP17967586A JPH0666354B2 JP H0666354 B2 JPH0666354 B2 JP H0666354B2 JP 61179675 A JP61179675 A JP 61179675A JP 17967586 A JP17967586 A JP 17967586A JP H0666354 B2 JPH0666354 B2 JP H0666354B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- lead
- semiconductor device
- wiring pattern
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置のリードフレームに関する。The present invention relates to a lead frame of a semiconductor device.
半導体装置の封止構造として、エポキシ樹脂等の樹脂を
充填する構成がある。この樹脂封止型の半導体装置のリ
ードフレームは、鉄にニッケルを４２％含有させたいわ
ゆる二元合金（通称４２合金）や銅を主体とした銅系の
金属薄板を用いてエッチングあるいはプレス加工により
製造されたもので、第２図に示すように、半導体素子４
を固定するための半導体素子固定部３と、この半導体素
子４と外部との電気的導通をとるためのリード部２とか
ら成っている。As a sealing structure of a semiconductor device, there is a configuration in which a resin such as an epoxy resin is filled. The lead frame of this resin-encapsulated semiconductor device is formed by etching or pressing using a so-called binary alloy (commonly known as 42 alloy) containing 42% of iron and nickel or a copper-based metal thin plate mainly composed of copper. As manufactured, as shown in FIG.
The semiconductor element fixing portion 3 for fixing the semiconductor element 4 and the lead portion 2 for electrically connecting the semiconductor element 4 to the outside.
半導体装置の製造工程では、まず金片，銀ペースト等の
ロー材を用いて、リードフレームの半導体素子固定部３
に半導体素子４を固定する。次に金，アルミニウム等の
金属細線７ｃを用いて、半導体素子４の上の電極と、リ
ードフレームのリード部２とを接続し、半導体素子４と
リード部２の電気的導通をとる。In the manufacturing process of a semiconductor device, first, a brazing material such as a gold piece or a silver paste is used to fix the semiconductor element fixing portion 3 of the lead frame.
The semiconductor element 4 is fixed to. Next, the metal wire 7c of gold, aluminum or the like is used to connect the electrode on the semiconductor element 4 and the lead portion 2 of the lead frame to establish electrical conduction between the semiconductor element 4 and the lead portion 2.
次に、リード部２の一部を除いた部分を、樹脂１で充填
して封止する。この樹脂１が充填されなかった部分のリ
ード部２が外部電極となる。このリード部２を所望の形
状に成形し、品名等を捺印し、半導体装置を形成する。
最後に外観，電気的特性等の検査を行ない、半導体装置
が完成する。Next, the portion excluding a part of the lead portion 2 is filled with the resin 1 and sealed. The lead portion 2 not filled with the resin 1 serves as an external electrode. The lead portion 2 is formed into a desired shape, and the product name and the like are marked to form a semiconductor device.
Finally, the appearance and electrical characteristics are inspected to complete the semiconductor device.
前述した従来のリードフレームでは、リードの本数が増
加していくと、製造上、限界がある。In the above-mentioned conventional lead frame, there is a limit in manufacturing as the number of leads increases.
例えば、リードの本数が１００本の場合、約１０mmの正
方形の一辺に２５本のリードを並べる必要がある。この
ためには、リード間のピッチが0.4mmでリードの幅が0.3
mm程度のリードフレームが必要となる。リードフレーム
に用いる金属板の厚みが0.15mmｔ前後であるため、この
ようなリードフレームを作製するためには、金属板の板
厚より細かいパターンを加工することになる。これは、
現行のエッチング及びプレス加工の技術では作製が困難
であり、これ以上のリード本数となると、作製できなく
なってしまう。For example, when the number of leads is 100, it is necessary to arrange 25 leads on one side of a square of about 10 mm. To do this, the lead-to-lead pitch is 0.4 mm and the lead width is 0.3 mm.
A lead frame of about mm is required. Since the thickness of the metal plate used for the lead frame is about 0.15 mmt, in order to manufacture such a lead frame, a pattern finer than the plate thickness of the metal plate is processed. this is,
It is difficult to manufacture with the current etching and pressing techniques, and if the number of leads exceeds this, it will not be possible to manufacture.
半導体素子とリード部との距離を大きくすれば、リード
間のピッチを広くすることができる。しかし、こうする
と半導体素子上の電極とリード部とを接続する金属細線
の長さも長くなってしまう。If the distance between the semiconductor element and the lead portion is increased, the pitch between the leads can be increased. However, in this case, the length of the thin metal wire connecting the electrode on the semiconductor element and the lead portion also becomes long.
金属細線が長くなると、自重で垂れ下がってしまい、所
望のループ形状が得られなくなってしまう。金属細線が
垂れ下がり、半導体素子の周辺部等に接触すると、電気
的に短絡されてしまい、半導体装置の所定の動作や特性
等が得られなくなってしまう。If the metal thin wire becomes long, it hangs down by its own weight, and it becomes impossible to obtain a desired loop shape. When the thin metal wire hangs down and comes into contact with the peripheral portion of the semiconductor element or the like, it is electrically short-circuited, and it becomes impossible to obtain the predetermined operation and characteristics of the semiconductor device.
また、金属細線が長すぎると、封止用の樹脂を充填する
ときに、金属細線が樹脂におされて変形しやすくなる。
また、変形したときの変位量も大きくなる。このため隣
り合う金属細線どうしが接触してしまうことがある。こ
うなると、リード間が短絡されてしまい、やはり半導体
装置としての機能をはたさなくなってしまう。以上のよ
うに、半導体素子とリード部との距離には限度があり、
むやみに長くすることはできない。In addition, when the metal thin wire is too long, the metal thin wire is apt to be deformed by the resin when being filled with the sealing resin.
In addition, the amount of displacement when deformed also increases. For this reason, adjacent metal fine wires may come into contact with each other. In this case, the leads are short-circuited, and the semiconductor device also fails to function. As described above, the distance between the semiconductor element and the lead part is limited,
It cannot be unreasonably long.
本発明の目的は、前記欠点を解決し、リードの数が多く
なっても短絡事故等が生じないようにした半導体装置の
リードフレームを提供することにある。An object of the present invention is to provide a lead frame for a semiconductor device, which solves the above-mentioned drawbacks and prevents a short circuit accident or the like even if the number of leads increases.
本発明の半導体装置は、半導体素子がその一部上に固定
された素子固定部、上記素子固定部の他の一部上に設け
られた絶縁物層、上記絶縁物層の表面に設けられた配線
パターン、上記半導体素子の電極を上記配線パターンの
一端に接続する第１の金属細線、及び上記配線パターン
の他端を外部導出リードに接続する第２の金属細線を有
することを特徴とする。The semiconductor device of the present invention includes an element fixing part having a semiconductor element fixed on a part thereof, an insulator layer provided on another part of the element fixing part, and a surface of the insulator layer. It is characterized by having a wiring pattern, a first thin metal wire connecting the electrode of the semiconductor element to one end of the wiring pattern, and a second thin metal wire connecting the other end of the wiring pattern to an external lead.
次に図面を参照しながら本発明を詳細に説明する。 The present invention will now be described in detail with reference to the drawings.
第１図は本発明の実施例の半導体装置のリードフレーム
の断面図である。同図において、半導体素子固定部３の
主面周辺部に、金片等のロー材を用いて絶縁物５が設け
られている。この絶縁物５の上には、導電体の配線パタ
ーン６が設けられている。まず、半導体素子固定部３の
主面中央に金片等のロー材を用いて半導体素子４をロー
付けする。FIG. 1 is a sectional view of a lead frame of a semiconductor device according to an embodiment of the present invention. In the figure, an insulator 5 is provided around the main surface of the semiconductor element fixing portion 3 using a brazing material such as a metal piece. A conductor wiring pattern 6 is provided on the insulator 5. First, the semiconductor element 4 is brazed to the center of the main surface of the semiconductor element fixing portion 3 using a brazing material such as a metal piece.
次に、半導体素子４の電極と配線パターン６とを金属細
線７ａで接続する。更に、配線パターン６とリード部２
を金属細線７ｂで接続する。これで、配線パターン６を
介して半導体素子４とリード部２との電気的導通がとら
れる。Next, the electrode of the semiconductor element 4 and the wiring pattern 6 are connected by the thin metal wire 7a. Furthermore, the wiring pattern 6 and the lead portion 2
Are connected with a thin metal wire 7b. As a result, electrical continuity is established between the semiconductor element 4 and the lead portion 2 via the wiring pattern 6.
次に、リード部２の一部を除いた部分を封止樹脂１で充
填して、外気からしゃ断する。Next, the portion excluding a part of the lead portion 2 is filled with the sealing resin 1 and cut off from the outside air.
本実施例では、半導体素子４とリード部２との間に配線
パターン６を設け、両者の電気的導通の仲介をするた
め、金属細線７ａ，７ｂの長さを長くせずに、半導体素
子４とリード部２との距離を大きくすることができる。In this embodiment, since the wiring pattern 6 is provided between the semiconductor element 4 and the lead portion 2 to mediate the electrical conduction between the two, the semiconductor element 4 does not have to be long and the semiconductor element 4 does not have to be long. The distance between the lead and the lead portion 2 can be increased.
このため、従来作製が困難だったリード本数が100本以
上のリードフレームも容易に作製することができる。Therefore, it is possible to easily manufacture a lead frame having 100 or more leads, which has been difficult to manufacture conventionally.
以上説明したように、本発明は、半導体装置用リードフ
レームの半導体素子固定部の周辺部に絶縁物を取り付
け、前記絶縁物の上に配線用の導電体のパターンを設け
たことにより、リード本数が100本以上のリードフレー
ムを容易に作製することができる。As described above, according to the present invention, the number of leads can be improved by attaching an insulator to the periphery of the semiconductor element fixing portion of the lead frame for a semiconductor device and providing a conductor pattern for wiring on the insulator. It is possible to easily manufacture lead frames of 100 or more.
第１図は本発明の実施例の半導体装置のリードフレーム
の断面図、第２図は従来の半導体装置のリードフレーム
の断面図である。 １……封止樹脂、２……リード、３……半導体素子の固
定部、４……半導体素子、５……絶縁物、６……導電体
の配線パターン、７ａ，７ｂ，７ｃ……金属細線。FIG. 1 is a sectional view of a lead frame of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a lead frame of a conventional semiconductor device. 1 ... Sealing resin, 2 ... Lead, 3 ... Fixed part of semiconductor element, 4 ... Semiconductor element, 5 ... Insulator, 6 ... Wiring pattern of conductor, 7a, 7b, 7c ... Metal Thin line.
Claims (1)
固定部、前記素子固定部の他の一部上に設けられた絶縁
物層、前記絶縁物層の表面に設けられた配線パターン、
前記半導体素子の電極を前記配線パターンの一端に接続
する第１の金属細線、及び前記配線パターンの他端を外
部導出リードに接続する第２の金属細線を有することを
特徴とする半導体装置。1. An element fixing part having a semiconductor element fixed on a part thereof, an insulating layer provided on another part of the element fixing part, and a wiring pattern provided on the surface of the insulating layer. ,
A semiconductor device comprising: a first thin metal wire that connects an electrode of the semiconductor element to one end of the wiring pattern; and a second thin metal wire that connects the other end of the wiring pattern to an external lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61179675A JPH0666354B2 (en) | 1986-07-29 | 1986-07-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61179675A JPH0666354B2 (en) | 1986-07-29 | 1986-07-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6334968A JPS6334968A (en) | 1988-02-15 |
| JPH0666354B2 true JPH0666354B2 (en) | 1994-08-24 |
Family
ID=16069908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61179675A Expired - Lifetime JPH0666354B2 (en) | 1986-07-29 | 1986-07-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666354B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02184054A (en) * | 1989-01-11 | 1990-07-18 | Toshiba Corp | Hybrid type resin sealed semiconductor device |
| JP2518716B2 (en) * | 1989-05-29 | 1996-07-31 | 株式会社巴川製紙所 | Adhesive sheet and semiconductor device |
| JPH0777256B2 (en) * | 1989-08-25 | 1995-08-16 | 株式会社東芝 | Resin-sealed semiconductor device |
| JPH04192450A (en) * | 1990-11-27 | 1992-07-10 | Sumitomo Metal Mining Co Ltd | Composite lead frame |
| JPH04192449A (en) * | 1990-11-27 | 1992-07-10 | Sumitomo Metal Mining Co Ltd | Composite lead frame |
| JP2516709B2 (en) * | 1990-11-27 | 1996-07-24 | 住友金属鉱山株式会社 | Compound lead frame |
| JPH04239161A (en) * | 1991-01-11 | 1992-08-27 | Nec Corp | Resin-sealed type semiconductor device |
-
1986
- 1986-07-29 JP JP61179675A patent/JPH0666354B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334968A (en) | 1988-02-15 |
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