JP2905609B2 - Resin-sealed semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device.

[0002]

2. Description of the Related Art FIG. 4 is a plan view showing a conventional resin-encapsulated semiconductor device, and FIG. 5 is a sectional view taken along line AA of FIG. In the figure, 1 is a semiconductor integrated circuit (hereinafter referred to as IC) chip, 2 is an island on which this IC chip 1 is mounted, 3 is an inner lead arranged so as to surround the island 2,
4 is an outer lead, 5 is a thin metal wire, and 6 is a mold resin.

When assembling such a semiconductor device, first, the IC chip 1 is fixed to the island 2 of the frame with an adhesive, and the IC chip 1 and the inner leads 3 are electrically connected to each other with the thin metal wires 5. Seal with resin 6.
Thereafter, the outer leads 4 are plated, and lead cutting and bending are performed.

[0004]

In the conventional resin-encapsulated semiconductor device as described above, in order to match the expansion coefficient with the IC chip, the lead frame material is made of an iron-based material, and the thermal conductivity of the lead frame material together with the encapsulating resin is reduced. Low, the heat did not spread to the entire package, and the heat dissipation was poor.

In order to further improve the heat dissipation, even when a heat spreader such as copper, which is a high heat conductive material, is attached to the lower surface, the frame material has to be attached to the heat spreader due to the expansion coefficient.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to reduce the thermal resistance of a package and to cause a problem even if the thermal expansion coefficients of an inner lead material and a heat spreader material are different. It is an object to obtain a resin-encapsulated semiconductor device that does not have any.

[0007]

A resin-encapsulated semiconductor device according to the present invention is arranged such that both upper and lower sides of a signal lead frame material are sandwiched between highly heat conductive metal plates via an insulating layer. The plate is spread over the entire package, and is in contact with the lead frame via an insulating layer, but is not fixed with an adhesive, and the upper and lower metal plates are directly bonded to each other.

[0008]

The metal plate having high thermal conductivity according to the present invention is arranged so as to spread over the entire package, so that the heat resistance is reduced and the heat dissipation is improved. Furthermore, since the metal plate is not directly fixed to the lead frame material, even if the heat spreader and the frame material have different coefficients of thermal expansion, there is no need to cause thermal deformation or the like.

[0009]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a plan view showing a resin-sealed semiconductor device according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line BB of FIG. 1, and FIG. 3 is a sectional view taken along line CC of FIG. , 1 to 6 indicate the same parts as the conventional device. Reference numeral 7 denotes a metal plate (heat spreader) made of a high thermal conductor provided so as to spread throughout the inside of the package. Reference numeral 8 denotes an insulating layer for electrically insulating the inner leads 3 from the heat spreader 7; An adhesive 10 for fixing the insulating layer 8 to the heat spreader 7 is an adhesive for connecting the upper and lower high heat conductive materials so as not to adhere to the inner leads 3.

When assembling the resin-encapsulated semiconductor device having the above-described structure, the frame and the metal plate 7 having high thermal conductivity are formed in advance by etching or punching as in the prior art. Next, the insulating layer 8 is attached to the metal plate 7, and further, the frame is sandwiched therebetween so that the metal plate 7 is connected.
Complete as an integral frame.

[0011]

As described above, according to the present invention, since the metal plate having high thermal conductivity is spread over the entire package so as to serve as a heat spreader, the heat resistance is small and the heat radiation is good. Further, since the heat spreader is not directly fixed to the inner lead, even if the heat spreader and the inner lead material have different coefficients of thermal expansion, problems such as frame deformation do not occur.

[Brief description of the drawings]

FIG. 1 is a plan view showing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 2 is a sectional view taken along line BB of FIG.

FIG. 3 is a sectional view taken along line CC of FIG. 1;

FIG. 4 is a plan view showing a conventional resin-encapsulated semiconductor device.

FIG. 5 is a sectional view taken along line AA of FIG. 4;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 IC chip 2 Island 3 Inner lead 4 Outer lead 5 Fine metal wire 6 Mold resin 7 Heat spreader 8 Insulating layer 9 Adhesive 10 Adhesive

Claims (1)

(57) [Claims] An IC chip is mounted on an island.
In a resin-sealed semiconductor device in which a C chip and a lead frame are joined by a thin metal wire and resin-sealed with a mold resin, an area within the resin-sealed area with the mold resin
The package on both the top and bottom sides of the lead frame .
Around the IC chip, metal wires, and inner leads
A resin-encapsulated semiconductor device characterized by being sandwiched by a high thermal conductive metal plate that spreads over the entire surface without being fixed via an insulating layer.