JP4688647B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP4688647B2
JP4688647B2 JP2005335092A JP2005335092A JP4688647B2 JP 4688647 B2 JP4688647 B2 JP 4688647B2 JP 2005335092 A JP2005335092 A JP 2005335092A JP 2005335092 A JP2005335092 A JP 2005335092A JP 4688647 B2 JP4688647 B2 JP 4688647B2
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heat radiating
semiconductor device
semiconductor element
radiating member
region
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JP2007142226A (en
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秀一 尾方
健一 伊東
彰 小賀
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、封止樹脂体内に放熱部材を内蔵する半導体装置とその製造方法に関する。 The present invention relates to a semiconductor device and its manufacturing how incorporating a heat radiating member in the sealing resin body.

近年、電子機器の多機能化、小型化、高密度化に対応するために半導体装置などの半導体部品の高密度化、高機能化、システム化が要求され、それに伴って半導体部品の消費電力が増大してきているのが現状である。この消費電力の増大により発生する熱を発散させるために、半導体装置にあっては、ダイパッドを封止樹脂から露出させることにより放熱性を向上させていた。しかし、ダイパッドを封止樹脂から露出させ、ダイパッド自体を放熱板として機能させることは、気密性や耐湿性の面で信頼性上好ましくなかった。そこで、従来より、封止樹脂内に放熱板を内蔵させる方式が提案されている。   In recent years, there has been a demand for higher density, higher functionality, and systematization of semiconductor components such as semiconductor devices in order to cope with the multi-functionality, miniaturization, and high density of electronic devices. The current situation is increasing. In order to dissipate the heat generated due to the increase in power consumption, in the semiconductor device, the heat dissipation is improved by exposing the die pad from the sealing resin. However, exposing the die pad from the sealing resin and allowing the die pad itself to function as a heat sink is not preferable in terms of airtightness and moisture resistance. Therefore, conventionally, a method of incorporating a heat sink in the sealing resin has been proposed.

以下、従来の放熱板内蔵の半導体装置について説明する。
図１８（ａ）は従来の半導体装置に用いるリードフレームを示す平面図であり、図１８（ｂ）は同リードフレームの一部拡大断面図であり、図１９は同リードフレームを用いた半導体装置の断面図である。図１９は図１８（ａ）におけるＡ−Ａ１箇所の断面を示している。 A conventional semiconductor device with a built-in heat sink will be described below.
18A is a plan view showing a lead frame used in a conventional semiconductor device, FIG. 18B is a partially enlarged sectional view of the lead frame, and FIG. 19 is a semiconductor device using the lead frame. FIG. FIG. 19 shows a cross section taken along line A-A1 in FIG.

各図において、１はリードフレーム、２は外枠、３は内枠である。リードフレーム１は、銅材、または４２−アロイ等の金属板よりなり、複数の単位リードフレームを一方向に直列に並べた形状となっている。単位リードフレームは、一対の平行に延在する外枠２と、この一対の外枠２を連結しかつ外枠２に直交する方向に延在する内枠３によって形成される枠形状となっている。 In each figure, 1 is a lead frame, 2 is an outer frame, and 3 is an inner frame. The lead frame 1 is made of a copper plate or a metal plate such as 42-alloy, and has a shape in which a plurality of unit lead frames are arranged in series in one direction. The unit lead frame has a frame shape formed by a pair of outer frames 2 extending in parallel and an inner frame 3 connecting the pair of outer frames 2 and extending in a direction perpendicular to the outer frame 2. Yes.

また、４は半導体素子、５は放熱機能を有する放熱板である。放熱板５の中央には半導体素子４が載置され、ダイパッドの代わりとなる。６はインナーリード部、７は吊りリード部である。インナーリード部６および吊りリード部７は、放熱板５の周辺にその先端部が配置されている。放熱板５はポリイミド樹脂によりインナーリード部６および吊りリード部７の先端部底面と加熱接着されている。   4 is a semiconductor element, and 5 is a heat dissipation plate having a heat dissipation function. The semiconductor element 4 is placed in the center of the heat sink 5 and serves as a die pad. 6 is an inner lead part, 7 is a suspension lead part. The inner lead portion 6 and the suspension lead portion 7 have their tip portions arranged around the heat sink 5. The heat radiating plate 5 is heated and bonded to the bottom surfaces of the tip portions of the inner lead portion 6 and the suspension lead portion 7 with polyimide resin.

８はボンディングワイヤ（金属細線）である。放熱板５に載置された半導体素子４はボンディングワイヤ８によりインナーリード部６に電気的に接続する。９はインナーリード部６と連続して設けられたアウターリード部であり、１０はインナーリード部６とアウターリード部９からなるリードである。１１はアウターリード部９と吊りリード部７を連結固定し、樹脂封止の際の樹脂止めとなるタイバー部である。   Reference numeral 8 denotes a bonding wire (metal thin wire). The semiconductor element 4 placed on the heat sink 5 is electrically connected to the inner lead portion 6 by a bonding wire 8. Reference numeral 9 denotes an outer lead portion provided continuously with the inner lead portion 6, and reference numeral 10 denotes a lead including the inner lead portion 6 and the outer lead portion 9. Reference numeral 11 denotes a tie bar portion that connects and fixes the outer lead portion 9 and the suspension lead portion 7 and serves as a resin stopper during resin sealing.

１２は封止樹脂体、１３は開口部である。開口部１３は、放熱板５の半導体素子４が載置される領域に設けられており、半導体素子４を載置し、外囲を樹脂で封止した際、開口部１３に樹脂が回りこみ、密着性を向上させる。   12 is a sealing resin body, and 13 is an opening. The opening 13 is provided in a region of the heat sink 5 where the semiconductor element 4 is placed. When the semiconductor element 4 is placed and the outer periphery is sealed with resin, the resin wraps around the opening 13. , Improve adhesion.

図１９から明らかなように、従来の放熱板内蔵の半導体装置は、半導体素子４に放熱板５が接合され、これらを樹脂で封止した構成となっている。このような構成は、ダイパッドを露出させたものと比べて基板設計への制約も少なく安価であり、取り扱いが容易である。さらに、放熱板５を封止しても、インナーリード部６と放熱板５を直接接続しているため、半導体素子４からの熱はリード１０を通じて外部へ放熱でき、放熱性も良い。   As is apparent from FIG. 19, the conventional semiconductor device with a built-in heat sink has a structure in which a heat sink 5 is joined to the semiconductor element 4 and these are sealed with resin. Such a configuration is less expensive and easier to handle than the one with the exposed die pad, with less restrictions on the substrate design. Furthermore, even if the heat radiating plate 5 is sealed, since the inner lead portion 6 and the heat radiating plate 5 are directly connected, the heat from the semiconductor element 4 can be radiated to the outside through the leads 10 and the heat radiating property is good.

しかしながら、この従来の放熱板内蔵の半導体装置には、発熱による収縮応力により半導体装置全体に大きな反りが発生するという問題があった。以下、この問題について説明する。   However, the conventional semiconductor device with a built-in heat sink has a problem that a large warp is generated in the entire semiconductor device due to shrinkage stress due to heat generation. Hereinafter, this problem will be described.

図２０（ａ）は従来の放熱板内蔵の半導体装置に用いるリードフレームの一部平面図であり、（ｂ）は同リードフレームを用いた半導体装置に発生する収縮応力を説明するための模式図であり、（ｃ）は同半導体装置の断面図である。図２０（ｂ）、（ｃ）は図２０（ａ）におけるＢ−Ｂ１箇所の断面を示している。また、図２０（ｂ）において、１５は収縮応力の強さを表した矢印であり、矢印の太さは収縮応力の強さを表している。   FIG. 20A is a partial plan view of a lead frame used in a conventional semiconductor device with a built-in heat sink, and FIG. 20B is a schematic diagram for explaining shrinkage stress generated in a semiconductor device using the lead frame. (C) is a cross-sectional view of the semiconductor device. FIGS. 20B and 20C show a cross section taken along the line B-B1 in FIG. In FIG. 20B, 15 is an arrow representing the strength of the contraction stress, and the thickness of the arrow represents the strength of the contraction stress.

上記従来の放熱板内蔵の半導体装置においては、図２０（ｂ）に示すように、上下の樹脂厚が異なるため、発熱による収縮応力が上層部で強く、下層部で弱くなる。そのため、図２０（ｃ）に示すように、樹脂と放熱板との収縮応力差により半導体装置全体に大きな反りが発生し、当該半導体装置を基板に実装する際の実装不良を多発させている。
特開２００１−１５６６９号公報 In the conventional semiconductor device with a built-in heat sink, as shown in FIG. 20 (b), since the upper and lower resin thicknesses are different, the contraction stress due to heat generation is strong in the upper layer part and weak in the lower layer part. For this reason, as shown in FIG. 20C, a large warp is generated in the entire semiconductor device due to a difference in shrinkage stress between the resin and the heat radiating plate, resulting in frequent mounting failures when the semiconductor device is mounted on the substrate.
JP 2001-15669 A

本発明は、上記従来の問題点に鑑み、リードフレームの上面にも放熱部材を設けることにより、放熱特性を充分に確保し、かつ実装信頼性を向上させることができる半導体装置とその製造方法を提供することを目的とする。 The present invention is the light of the conventional problems, by providing a heat radiating member to the upper surface of the lead frame, the heat dissipation characteristics sufficiently secured, and mounting reliability semiconductor device and its manufacturing how that can be improved The purpose is to provide.

本発明の請求項１記載の半導体装置は、半導体素子を樹脂で封止した封止樹脂体から前記半導体素子に電気的に接続する複数本のリードのアウターリード部が突出している半導体装置であって、前記封止樹脂体内に、前記各リードのインナーリード部と、前記各インナーリード部を前記半導体素子と電気的に接続するための複数本の金属細線と、前記半導体素子が載置され、前記各インナーリード部の底面に接着された下側放熱部材と、前記半導体素子が載置される第１の領域と前記各金属細線が前記各インナーリード部に接続される第２の領域が開放され、前記各インナーリード部の上面に接着された上側放熱部材と、が密閉されており、前記上側放熱部材が前記第１の領域と前記第２の領域の間にも形成されていることを特徴とする。 The semiconductor device according to claim 1 of the present invention is a semiconductor device in which outer lead portions of a plurality of leads electrically connected to the semiconductor element protrude from a sealing resin body in which the semiconductor element is sealed with resin. In the sealing resin body, an inner lead portion of each lead, a plurality of fine metal wires for electrically connecting each inner lead portion to the semiconductor element, and the semiconductor element are placed , a lower heat dissipation member said bonded to the bottom surface of each inner lead portion, a second region where the first region and the respective metal thin wires before Symbol semiconductor element is mounted is connected to the respective inner lead portions The upper heat dissipating member that is opened and bonded to the upper surface of each inner lead portion is sealed, and the upper heat dissipating member is also formed between the first region and the second region . It is characterized by.

また、本発明の請求項２記載の半導体装置は、請求項１記載の半導体装置であって、前記上側放熱部材で覆われた前記各リードの間は樹脂で充填されていることを特徴とする。 The semiconductor device according to claim 2 of the present invention is a semiconductor device according to claim 1, wherein during said covered by the upper heat radiating member wherein each lead and characterized in that it is filled with trees fat To do.

また、本発明の請求項３記載の半導体装置は、請求項１記載の半導体装置であって、前記下側放熱部材で覆われた前記各リードの間は樹脂で充填されていることを特徴とする。 The semiconductor device according to claim 3 of the present invention, characterized in that a semiconductor device according to claim 1, wherein, between the lower heat dissipation member covered with said each lead which is filled with trees fat And

また、本発明の請求項４記載の半導体装置は、請求項１記載の半導体装置であって、前記上側放熱部材と前記下側放熱部材で挟み込まれた前記各リードの間は樹脂で充填されていることを特徴とする。 The semiconductor device according to claim 4 of the present invention is a semiconductor device according to claim 1, wherein, between said upper radiating member and the respective leads the sandwiched by the lower heat dissipation member is filled with trees fat It is characterized by.

また、本発明の請求項５記載の半導体装置は、請求項１ないし４のいずれかに記載の半導体装置であって、前記上側放熱部材は、前記下側放熱部材と材質が同じで厚みが異なることを特徴とする。 A semiconductor device according to a fifth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, wherein the upper heat radiating member is made of the same material as the lower heat radiating member and has a different thickness. It is characterized by that.

また、本発明の請求項６記載の半導体装置は、請求項１ないし４のいずれかに記載の半導体装置であって、前記上側放熱部材は、前記下側放熱部材と厚みが同じで、線形膨張係数が前記下側放熱部材よりも大きい材質であることを特徴とする。 A semiconductor device according to a sixth aspect of the present invention is the semiconductor device according to any one of the first to fourth aspects, wherein the upper heat radiating member has the same thickness as the lower heat radiating member and is linearly expanded. The coefficient is a material larger than the said lower side thermal radiation member, It is characterized by the above-mentioned.

また、本発明の請求項７記載の半導体装置の製造方法は、半導体素子を樹脂で封止した封止樹脂体から前記半導体素子に電気的に接続する複数本のリードのアウターリード部が突出している半導体装置を製造する方法であって、前記半導体素子が載置される下側放熱部材が前記各リードのインナーリード部の底面に接着され、かつ前記半導体素子が載置される第１の領域と前記各インナーリード部に各金属細線が接続される第２の領域が開放されている上側放熱部材が前記各インナーリード部の上面に接着されているリードフレームの前記下側放熱部材に、前記上側放熱部材の前記第１の領域を通じて前記半導体素子を載置する工程と、前記半導体素子の各ボンディングパッドと前記各インナーリード部を、前記上側放熱部材の前記第１の領域と前記第２の領域を通じて金属細線でそれぞれ接続する工程と、前記各リードのアウターリード部が前記封止樹脂体から突出し、かつ前記各インナーリード部と前記下側放熱部材と前記上側放熱部材と前記半導体素子と前記各金属細線とが密閉されるように樹脂で封止する工程と、を具備し、前記上側放熱部材が前記第１の領域と前記第２の領域の間にも形成されていることを特徴とする。 According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which outer lead portions of a plurality of leads electrically connected to the semiconductor element protrude from a sealing resin body in which the semiconductor element is sealed with resin. A first region in which a lower heat radiating member on which the semiconductor element is placed is bonded to a bottom surface of an inner lead portion of each lead and the semiconductor element is placed wherein the lower radiator member of the lead frame upper radiating member second region each inner each thin metal wire to the lead portion is connected is opened is bonded to the upper surface of the respective inner lead portions and said a step of placing the semiconductor device through the first region of the upper heat radiating member, each of said inner lead portions and the bonding pads of the semiconductor element, the first territory of the upper heat radiating member Wherein the step of connecting each by a metal thin wire through the second region, the outer lead portions of the leads are protruded from the sealing resin member, and wherein the upper heat dissipation member and the lower heat dissipation member and the inner lead portion and And the step of sealing with resin so that the semiconductor element and each of the fine metal wires are hermetically sealed , and the upper heat dissipation member is also formed between the first region and the second region. It is characterized by.

本発明によれば、リードフレームの上面に放熱部材を設けることにより、半導体装置の上層部と下層部における樹脂厚の違いによる収縮応力差を抑制することができ、さらには応力バランスを均等にすることも可能となる。応力差を抑制することで、封止後の反りを低減できる。よって、安定した基板実装が可能となり、実装信頼性を充分確保できる品質の優れた半導体装置を提供することができる。また、リードフレームの上面にも放熱部材を追加するので、放熱性を向上させることができる。   According to the present invention, by providing the heat dissipating member on the upper surface of the lead frame, it is possible to suppress the difference in shrinkage stress due to the difference in the resin thickness between the upper layer portion and the lower layer portion of the semiconductor device, and further equalize the stress balance. It is also possible. By suppressing the stress difference, warpage after sealing can be reduced. Therefore, stable substrate mounting is possible, and a semiconductor device with excellent quality that can sufficiently secure mounting reliability can be provided. Moreover, since a heat radiating member is added also to the upper surface of a lead frame, heat dissipation can be improved.

また、本発明の半導体装置の製造方法によれば、ダイボンディング工程、ワイヤボンディング工程において既存のステージを準備し、既存設備を活用することができ、従来の組立プロセスを変更することなく安定した効率の良い製造が可能となる。   In addition, according to the method for manufacturing a semiconductor device of the present invention, an existing stage can be prepared in a die bonding process and a wire bonding process, and existing facilities can be utilized, and stable efficiency can be achieved without changing the conventional assembly process. Can be manufactured with good quality.

以下、本発明の実施の形態における半導体装置について説明する。
図１（ａ）は本実施の形態における半導体装置に用いるリードフレームの第１の例を示す平面図であり、図１（ｂ）は同リードフレームの一部拡大平面図であり、図２は同リードフレームの底面図であり、図３は同リードフレームを用いた半導体装置の断面図である。図３は図１（ａ）におけるＡ−Ａ１箇所の断面を示している。 Hereinafter, semiconductor devices according to embodiments of the present invention will be described.
1A is a plan view showing a first example of a lead frame used in the semiconductor device according to the present embodiment, FIG. 1B is a partially enlarged plan view of the lead frame, and FIG. FIG. 3 is a bottom view of the lead frame, and FIG. 3 is a cross-sectional view of a semiconductor device using the lead frame. FIG. 3 shows a cross section taken along line A-A1 in FIG.

各図において、１はリードフレーム、２は外枠、３は内枠である。リードフレーム１は、銅材、または４２−アロイ等の金属板よりなり、複数の単位リードフレームを一方向に直列に並べた形状となっている。単位リードフレームは、一対の平行に延在する外枠２と、この一対の外枠２を連結しかつ外枠２に直交する方向に延在する内枠３によって形成される枠形状となっている。 In each figure, 1 is a lead frame, 2 is an outer frame, and 3 is an inner frame. The lead frame 1 is made of a copper plate or a metal plate such as 42-alloy, and has a shape in which a plurality of unit lead frames are arranged in series in one direction. The unit lead frame has a frame shape formed by a pair of outer frames 2 extending in parallel and an inner frame 3 connecting the pair of outer frames 2 and extending in a direction perpendicular to the outer frame 2. Yes.

また、４は半導体素子、５は放熱機能を有する下側放熱板（下側放熱板部材）である。下側放熱板５の中央には半導体素子４が載置され、ダイパッドの代わりとなる。６はインナーリード部、７は吊りリード部である。インナーリード部６および吊りリード部７は、下側放熱板５の周辺にその先端部が配置されている。   Further, 4 is a semiconductor element, and 5 is a lower heat radiating plate (lower heat radiating plate member) having a heat radiating function. The semiconductor element 4 is placed in the center of the lower heat sink 5 and serves as a die pad. 6 is an inner lead part, 7 is a suspension lead part. The inner lead portion 6 and the suspension lead portion 7 have their distal ends disposed around the lower heat sink 5.

下側放熱板５の上面は粘着材により各インナーリード部６および各吊りリード部７の底面と接着されている。接着方法としては、粘着性のポリイミド樹脂を下側放熱板５の上面に付着させて、各インナーリード部６および各吊りリード部７の底面と加熱接着する。粘着性のポリイミド樹脂としては、例えば粘着性のポリイミドテープを貼り付けたりする。   The upper surface of the lower heat radiating plate 5 is bonded to the bottom surfaces of the inner lead portions 6 and the suspension lead portions 7 with an adhesive material. As an adhesion method, an adhesive polyimide resin is attached to the upper surface of the lower heat radiating plate 5 and heat bonded to the bottom surfaces of the inner lead portions 6 and the suspension lead portions 7. For example, an adhesive polyimide tape is attached as the adhesive polyimide resin.

８はボンディングワイヤ（金属細線）である。下側放熱板５に載置された半導体素子４の電極パッド（ボンディングパッド）はボンディングワイヤ８によりインナーリード部６の先端部に電気的に接続される。   Reference numeral 8 denotes a bonding wire (metal thin wire). The electrode pad (bonding pad) of the semiconductor element 4 placed on the lower heat sink 5 is electrically connected to the tip of the inner lead portion 6 by a bonding wire 8.

９はインナーリード部６と連続して設けられたアウターリード部であり、１０はインナーリード部６とアウターリード部９からなるリードである。１１はアウターリード部９と吊りリード部７を連結固定し、樹脂封止の際の樹脂止めとなるタイバー部である。なお、リード１０には表面がめっき処理されたものを用いてもよい。例えば、半田メッキ、またはニッケル、パラジウム、金などの金属が積層されてメッキされたものを用いる。外枠２と内枠３は、リード１０と吊りリード部７を支持する。   Reference numeral 9 denotes an outer lead portion provided continuously with the inner lead portion 6, and reference numeral 10 denotes a lead including the inner lead portion 6 and the outer lead portion 9. Reference numeral 11 denotes a tie bar portion that connects and fixes the outer lead portion 9 and the suspension lead portion 7 and serves as a resin stopper during resin sealing. The lead 10 may have a surface plated. For example, a solder plating or a metal plating such as nickel, palladium, or gold is used. The outer frame 2 and the inner frame 3 support the lead 10 and the suspension lead portion 7.

１２は封止樹脂体、１３は開口部である。開口部１３は、下側放熱板５の半導体素子４が載置される領域に設けられており、半導体素子４を載置し、外囲を樹脂で封止した際、開口部１３に樹脂が回りこみ、密着性を向上させる。   12 is a sealing resin body, and 13 is an opening. The opening 13 is provided in a region of the lower heat sink 5 where the semiconductor element 4 is placed. When the semiconductor element 4 is placed and the outer periphery is sealed with resin, the opening 13 is filled with resin. Wrap around, improve adhesion.

１４ａは放熱機能を有する上側放熱板（上側放熱部材）である。図に示すように、上側放熱板１４ａはインナーリード部６の先端部（ボンディングワイヤ８に接続する領域）、および半導体素子４を載置する領域が開放された形状をしている。   14a is an upper heat radiating plate (upper heat radiating member) having a heat radiating function. As shown in the drawing, the upper radiator plate 14a has a shape in which the tip of the inner lead portion 6 (region connected to the bonding wire 8) and the region on which the semiconductor element 4 is placed are opened.

また、上側放熱板１４ａの底面は粘着材によりインナーリード部６および吊りリード部７の上面と接着されている。接着方法としては、例えば下側放熱板５と同様に、粘着性のポリイミド樹脂を上側放熱板１４ａの底面に付着させて、各インナーリード部６および各吊りリード部７の上面と加熱接着する。粘着性のポリイミド樹脂としては、例えば粘着性のポリイミドテープを貼り付けたりする。なお、この上側放熱板１４ａを用いる場合には、インナーリード部６および吊りリード部７の先端より内側の領域において、下側放熱板５と上側放熱板１４ａを接着してもよい。   Further, the bottom surface of the upper heat radiating plate 14 a is bonded to the upper surfaces of the inner lead portion 6 and the suspension lead portion 7 with an adhesive material. As an adhesion method, for example, as with the lower heat radiating plate 5, an adhesive polyimide resin is attached to the bottom surface of the upper heat radiating plate 14 a, and heat bonded to the upper surfaces of the inner lead portions 6 and the suspension lead portions 7. For example, an adhesive polyimide tape is attached as the adhesive polyimide resin. In the case of using the upper heat radiating plate 14a, the lower heat radiating plate 5 and the upper heat radiating plate 14a may be bonded in a region inside the tip of the inner lead portion 6 and the suspension lead portion 7.

図１１（ａ）は上側放熱板１４ａの形状を示す平面図である。例えば、半導体素子４の外形寸法が６ｍｍ角、厚さが０．２〜０．４ｍｍ程度の場合、上側放熱板１４ａは、インナーリード部６の先端部の切り抜き幅を１．０〜１．５ｍｍ程度にし、半導体素子４を載置する領域の切り抜き幅を半導体素子４の外形寸法の２倍以上にする。   Fig.11 (a) is a top view which shows the shape of the upper side heat sink 14a. For example, when the outer dimensions of the semiconductor element 4 are 6 mm square and the thickness is about 0.2 to 0.4 mm, the upper radiator plate 14a has a cutout width of 1.0 to 1.5 mm at the tip of the inner lead portion 6. The cutout width of the region on which the semiconductor element 4 is placed is set to be twice or more the outer dimension of the semiconductor element 4.

また、上側放熱板１４ａとしては、半導体装置の上層部と下層部で線膨張が等しくなるように、例えば下側放熱板５と材質が同じで厚みが異なるものや、下側放熱板５と厚みが同じで線膨張係数が下側放熱板５よりも大きい材質のものを使用する。   Further, as the upper radiator plate 14a, for example, the lower radiator plate 5 is made of the same material and has a different thickness so that the linear expansion is equal between the upper layer portion and the lower layer portion of the semiconductor device, or the lower radiator plate 5 and the thickness. Are the same, and the linear expansion coefficient is larger than that of the lower heat sink 5.

図３に示すように、当該半導体装置は、下側放熱板５上に半導体素子４が載置され、半導体素子４の電極パッドとインナーリード部６とがボンディングワイヤ８により電気的に接続され、半導体素子４、下側放熱板５、インナーリード部６、ボンディングワイヤ８、上側放熱板１４ａの外囲を樹脂封止した封止樹脂体１２から各インナーリード部６と一体的に連結されたアウターリード部９が突出している。また、封止樹脂体１２は４辺形の平板状に成形されている。   As shown in FIG. 3, in the semiconductor device, the semiconductor element 4 is mounted on the lower heat sink 5, and the electrode pad of the semiconductor element 4 and the inner lead portion 6 are electrically connected by the bonding wire 8, Outer integrally connected to each inner lead 6 from a sealing resin body 12 in which the outer periphery of the semiconductor element 4, the lower heat sink 5, the inner lead 6, the bonding wire 8, and the upper heat sink 14a is sealed with resin. The lead part 9 protrudes. The sealing resin body 12 is formed into a quadrangular flat plate shape.

また、図示していないが、上側放熱板１４ａあるいは下側放熱板５で覆われたインナーリード部６間、およびインナーリード部６と吊りリード部７の間（以下、インナーリード部６間等と称す。）、または上側放熱板１４ａと下側放熱板５で挟み込まれたインナーリード部６間等は、上側放熱板１４ａまたは下側放熱板５の接着に用いる樹脂で充填されている。   Although not shown, between the inner lead portions 6 covered with the upper heat radiating plate 14a or the lower heat radiating plate 5, and between the inner lead portion 6 and the suspension lead portion 7 (hereinafter, between the inner lead portions 6 and the like). The space between the inner lead portions 6 sandwiched between the upper radiator plate 14a and the lower radiator plate 5 is filled with a resin used for bonding the upper radiator plate 14a or the lower radiator plate 5 or the like.

すなわち、リードフレーム１を製造する工程において、エッチングあるいはプレス加工によりリード１０や、吊りリード部７、タイバー部１１を形成した後、インナーリード部６と吊りリード部７の底面に下側放熱板５を加熱接着する際、もしくはインナーリード部６と吊りリード部７の上面に上側放熱板１４ａを加熱接着する際に、下側放熱板５もしくは上側放熱板１４ａの接着に用いる粘着性の樹脂を、下側放熱板５あるいは上側放熱板１４ａで覆われるインナーリード部６間等、または下側放熱板５と上側放熱板１４ａで挟み込まれるインナーリード部６間等に流動させながら、加熱接着する。なお、下側放熱板５を加熱接着する工程と上側放熱板１４ａを加熱接着する工程のそれぞれにおいて、接着に用いる粘着性の樹脂を充填するようにしてもよい。   That is, in the process of manufacturing the lead frame 1, after forming the lead 10, the suspension lead portion 7, and the tie bar portion 11 by etching or pressing, the lower heat sink 5 is formed on the bottom surfaces of the inner lead portion 6 and the suspension lead portion 7. When the upper heat sink 14a is heat bonded to the upper surfaces of the inner lead portion 6 and the suspension lead portion 7, the adhesive resin used for bonding the lower heat sink 5 or the upper heat sink 14a is used. Heat bonding is performed while flowing between the inner lead portions 6 covered by the lower heat radiating plate 5 or the upper heat radiating plate 14a, or between the inner lead portions 6 sandwiched between the lower heat radiating plate 5 and the upper heat radiating plate 14a. In each of the step of heat-bonding the lower heat sink 5 and the step of heat-bonding the upper heat sink 14a, an adhesive resin used for bonding may be filled.

このようにリードフレームを製造することにより、下側放熱板５の接着工程と同一プロセスで上側放熱板１４ａを接着することでき、同一の設備を使用することができる。さらに、同一のプロセスで、下側放熱板５あるいは上側放熱板１４ａで覆われるインナーリード部６間等、または下側放熱板５と上側放熱板１４ａで挟み込まれるインナーリード部６間等に予め樹脂を充填することができる。つまり、少なくとも放熱板で挟み込まれたインナーリード部間等に予め樹脂を充填しておくことができる。なお、具体的には、封止樹脂体１２には熱可塑性の樹脂を用い、インナーリード部６間等には熱硬化性の樹脂を充填する。このように、放熱板で挟み込まれたインナーリード部間等に予め樹脂を充填しておくことで、後の封止工程で未充填となる事態を回避することができ、高信頼性（半田耐熱性）を確保することができる。   By manufacturing the lead frame in this way, the upper heat sink 14a can be bonded in the same process as the bonding process of the lower heat sink 5, and the same equipment can be used. Further, in the same process, resin is previously applied between the inner lead portions 6 covered with the lower heat sink 5 or the upper heat sink 14a, or between the inner lead portions 6 sandwiched between the lower heat sink 5 and the upper heat sink 14a. Can be filled. That is, the resin can be filled in advance at least between the inner lead portions sandwiched between the heat sinks. Specifically, a thermoplastic resin is used for the sealing resin body 12, and a space between the inner lead portions 6 is filled with a thermosetting resin. Thus, by filling the resin between the inner lead portions sandwiched between the heat sinks in advance, it is possible to avoid an unfilled state in a later sealing process, and high reliability (solder heat resistance) Property).

続いて、図４を用いて本実施の形態における半導体装置の発熱による変化を説明する。図４（ａ）は本実施の形態における半導体装置に用いるリードフレームの一部平面図であり、（ｂ）は同リードフレームを用いた半導体装置に発生する収縮応力を説明するための模式図であり、（ｃ）は同半導体装置の断面図である。図４（ｂ）、（ｃ）は図４（ａ）におけるＢ−Ｂ１箇所の断面を示している。また、図４（ｂ）において、１５は収縮応力の強さを表した矢印であり、矢印の太さは収縮応力の強さを表している。   Next, changes due to heat generation of the semiconductor device in this embodiment will be described with reference to FIG. FIG. 4A is a partial plan view of a lead frame used in the semiconductor device in the present embodiment, and FIG. 4B is a schematic diagram for explaining shrinkage stress generated in the semiconductor device using the lead frame. FIG. 3C is a cross-sectional view of the semiconductor device. 4 (b) and 4 (c) show cross-sections at the BB1 position in FIG. 4 (a). In FIG. 4B, 15 is an arrow representing the strength of the contraction stress, and the thickness of the arrow represents the strength of the contraction stress.

本実施の形態によれば、図４（ｂ）に示すように、発熱による収縮応力が上層部と下層部で略等しくなる。そのため、図４（ｃ）に示すように、図２０（ｃ）と比べて半導体装置の反りが小さくなる。   According to the present embodiment, as shown in FIG. 4B, the contraction stress due to heat generation is substantially equal between the upper layer portion and the lower layer portion. Therefore, as shown in FIG. 4C, the warp of the semiconductor device is smaller than that in FIG.

続いて、本実施の形態における半導体装置の他の例について、図面を用いて説明する。但し、図１〜３において説明した部材と同一の部材には同一符号を付して、説明を省略する。以下で説明する半導体装置は、上述の半導体装置に対して上側放熱板の形状が異なる。   Next, another example of the semiconductor device in this embodiment is described with reference to drawings. However, the same members as those described with reference to FIGS. The semiconductor device described below is different from the above-described semiconductor device in the shape of the upper radiator plate.

図５（ａ）は本実施の形態における半導体装置に用いるリードフレームの第２の例を示す平面図であり、図５（ｂ）は同リードフレームの一部拡大平面図であり、図６は同リードフレームを用いた半導体装置の断面図である。図６は図５（ａ）におけるＡ−Ａ１箇所の断面を示している。図に示すように、この上側放熱板１４ｂは、インナーリード部６の先端部（ボンディングワイヤ８に接続する箇所）より内側が開放された形状をしている。   FIG. 5A is a plan view showing a second example of the lead frame used in the semiconductor device according to the present embodiment, FIG. 5B is a partially enlarged plan view of the lead frame, and FIG. It is sectional drawing of the semiconductor device using the lead frame. FIG. 6 shows a cross section taken along line A-A1 in FIG. As shown in the figure, the upper heat radiating plate 14b has a shape in which the inner side is opened from the tip of the inner lead portion 6 (the portion connected to the bonding wire 8).

図１１（ｂ）は、この上側放熱板１４ｂの形状を示す平面図である。例えば、半導体素子４の外形寸法が６ｍｍ角、厚さが０．２〜０．４ｍｍ程度の場合、上側放熱板１４ｂは、各インナーリード部６および各吊りリード部７の先端から０．７〜１．２ｍｍ外側の位置より内側を切り抜いた形状とする。   FIG. 11B is a plan view showing the shape of the upper heat radiating plate 14b. For example, when the outer dimensions of the semiconductor element 4 are about 6 mm square and the thickness is about 0.2 to 0.4 mm, the upper radiator plate 14 b is 0.7 to 0.7 mm from the tips of the inner lead portions 6 and the suspension lead portions 7. The inner side is cut out from the 1.2 mm outer position.

また、図７（ａ）は本実施の形態における半導体装置に用いるリードフレームの第３の例を示す平面図であり、図７（ｂ）は同リードフレームの一部拡大平面図であり、図８は同リードフレームを用いた半導体装置の断面図である。図８は図７（ａ）におけるＡ−Ａ１箇所の断面を示している。図に示すように、この上側放熱板１４ｃは、インナーリード部６の先端部（ボンディングワイヤ８に接続する箇所）より内側が開放されており、かつ吊りリード部７の位置で放熱板が切り離された形状をしている。このように複数枚の放熱板を用いて、それぞれを離して設置してもよい。   FIG. 7A is a plan view showing a third example of the lead frame used in the semiconductor device in the present embodiment, and FIG. 7B is a partially enlarged plan view of the lead frame. 8 is a cross-sectional view of a semiconductor device using the lead frame. FIG. 8 shows a cross section taken along line A-A1 in FIG. As shown in the figure, the upper heat radiating plate 14 c is open on the inner side from the tip of the inner lead portion 6 (location connected to the bonding wire 8), and the heat radiating plate is cut off at the position of the suspension lead portion 7. It has a different shape. In this way, a plurality of heat sinks may be used and installed separately from each other.

図１１（ｃ）は、この上側放熱板１４ｃの形状を示す平面図である。例えば、半導体素子４の外形寸法が６ｍｍ角、厚さが０．２〜０．４ｍｍ程度の場合、上側放熱板１４ｃは、各インナーリード部６および各吊りリード部７の先端から０．７〜１．２ｍｍ外側の位置より内側を切り抜き、かつ４コーナーの吊りリード部７上において０．２〜０．５ｍｍ幅で切り離した形状とする。このように切り離した形状とすることにより、上側放熱部材の加工性を向上させることができる。   FIG.11 (c) is a top view which shows the shape of this upper side heat sink 14c. For example, when the outer dimensions of the semiconductor element 4 are about 6 mm square and the thickness is about 0.2 to 0.4 mm, the upper radiator plate 14 c is 0.7 to 0.7 mm from the tips of the inner lead portions 6 and the suspension lead portions 7. The inner side is cut out from the position of the outer side of 1.2 mm, and the shape is cut at a width of 0.2 to 0.5 mm on the suspension lead portion 7 at the four corners. By making it the shape cut | disconnected in this way, the workability of an upper side heat radiating member can be improved.

また、図９（ａ）は本実施の形態における半導体装置に用いるリードフレームの第４の例を示す平面図であり、図９（ｂ）は同リードフレームの一部拡大平面図であり、図１０は同リードフレームを用いた半導体装置の断面図である。図１０は図９（ａ）におけるＡ−Ａ１箇所の断面を示している。図に示すように、この上側放熱板１４ｄは、下側放熱板５より外側に設置され、その内側がリング状に開放されている。   FIG. 9A is a plan view showing a fourth example of the lead frame used in the semiconductor device in the present embodiment, and FIG. 9B is a partially enlarged plan view of the lead frame. 10 is a cross-sectional view of a semiconductor device using the lead frame. FIG. 10 shows a cross section taken along line A-A1 in FIG. As shown in the drawing, the upper heat radiating plate 14d is installed outside the lower heat radiating plate 5, and the inner side is opened in a ring shape.

図１１（ｄ）は、この上側放熱板１４ｄの形状を示す平面図である。例えば、半導体素子４の外形寸法が６ｍｍ角、厚さが０．２〜０．４ｍｍ程度の場合、上側放熱板１４ｄは幅が１．０ｍｍ以上のリング形状とし、下側放熱板５より０．５〜１．０ｍｍ外側に設置する。   FIG. 11D is a plan view showing the shape of the upper heat radiating plate 14d. For example, when the outer dimensions of the semiconductor element 4 are about 6 mm square and the thickness is about 0.2 to 0.4 mm, the upper radiator plate 14 d has a ring shape with a width of 1.0 mm or more, and is 0. Install 5 to 1.0 mm outside.

これらの上側放熱板１４ｂ〜１４ｄについても、半導体装置の上層部と下層部で線膨張が等しくなるように、例えば下側放熱板５と材質が同じで厚みが異なるものや、下側放熱板５と厚みが同じで線膨張係数が下側放熱板５よりも大きい材質のものを使用する。これらの上側放熱板１４ｂ〜１４ｄを使用することにより、図４を用いて説明したように、発熱による収縮応力が上層部と下層部で略等しくなり、半導体装置の反りが小さくなる。   For these upper radiator plates 14b to 14d, for example, the lower radiator plate 5 has the same material as the lower radiator plate 5 but has a different thickness so that the linear expansion is equal between the upper layer portion and the lower layer portion of the semiconductor device. And a material having the same thickness and a linear expansion coefficient larger than that of the lower radiator plate 5 is used. By using these upper radiator plates 14b to 14d, as described with reference to FIG. 4, the shrinkage stress due to heat generation is substantially equal between the upper layer portion and the lower layer portion, and the warpage of the semiconductor device is reduced.

続いて、上述した半導体装置の製造方法について説明する。ここでは図１（ａ）に示すリードフレームを用いた半導体装置を例にして説明するが、図５〜１０に示すリードフレームを用いる場合も同様である。   Next, a method for manufacturing the semiconductor device described above will be described. Here, the semiconductor device using the lead frame shown in FIG. 1A will be described as an example, but the same applies to the case where the lead frame shown in FIGS.

図１２はダイボンディングの前工程を説明するための工程断面図、図１３は半導体素子４をダイボンディングする工程を説明するための工程断面図、図１４は半導体素子４のボンディングパッドにボールボンディングする工程を説明するための工程断面図、図１５および図１６は半導体素子４からインナーリード部６にボンディングワイヤ８をボンディングする工程を説明するための工程断面図である。   12 is a process cross-sectional view for explaining the pre-process of die bonding, FIG. 13 is a process cross-sectional view for explaining the process of die-bonding the semiconductor element 4, and FIG. 14 is ball bonded to a bonding pad of the semiconductor element 4. Process sectional views for explaining the process, FIGS. 15 and 16 are process sectional views for explaining the process of bonding the bonding wire 8 from the semiconductor element 4 to the inner lead portion 6.

図１２において、１６は半導体素子ボンディング装置（図示せず）のステージ、１７は下側放熱板５上面に半導体素子４を固着するための接着剤、１８は接着剤１７を塗布するためのディスペンサである。まず、図１２に示すように、ステージ１６上において、下側放熱板５上面にディスペンサ１８により接着剤１７を塗布する。接着剤１７の塗布はディスペンサ１８を用いて、接着剤１７を滴下することにより行う。接着剤１７は一例として熱硬化性のエポキシ樹脂にＡｇ粉を混合させたＡｇペーストからなる。   In FIG. 12, 16 is a stage of a semiconductor element bonding apparatus (not shown), 17 is an adhesive for fixing the semiconductor element 4 to the upper surface of the lower radiator plate 5, and 18 is a dispenser for applying the adhesive 17. is there. First, as shown in FIG. 12, an adhesive 17 is applied to the upper surface of the lower radiator plate 5 by a dispenser 18 on the stage 16. Application of the adhesive 17 is performed by dropping the adhesive 17 using the dispenser 18. For example, the adhesive 17 is made of an Ag paste in which Ag powder is mixed with a thermosetting epoxy resin.

図１３において、１９は半導体素子４を保持するコレットである。図１３に示すように、接着剤１７を塗布した下側放熱板５上にコレット１９を用いて半導体素子４を載置する。その後、ヒートステージ（図示せず）上で加熱し、接着剤１７を硬化させる。一例として、半導体素子４は、外形寸法が６ｍｍ角、厚さが０．２〜０．４ｍｍ程度のシリコン単結晶である。また、加熱条件は、温度が１８０〜２５０°Ｃで、加熱時間が３０秒から６０秒程度である。なお、接着剤１７の硬化にはキュア炉を用いてもよい。   In FIG. 13, reference numeral 19 denotes a collet that holds the semiconductor element 4. As shown in FIG. 13, the semiconductor element 4 is placed on the lower radiator plate 5 coated with the adhesive 17 using a collet 19. Thereafter, the adhesive 17 is cured by heating on a heat stage (not shown). As an example, the semiconductor element 4 is a silicon single crystal having an outer dimension of 6 mm square and a thickness of about 0.2 to 0.4 mm. The heating conditions are a temperature of 180 to 250 ° C. and a heating time of about 30 to 60 seconds. A curing furnace may be used for curing the adhesive 17.

図１４において、２０はワイヤボンディング装置（図示せず）のヒートステージ、２１は軸芯にボンディングワイヤ８を通すための細穴を有するキャピラリである。接着剤１７を硬化させた後、図１４に示すように、フラットな状態のヒートステージ２０上でインナーリード部６のワイヤボンディング領域外周部を固定治具（図示せず）によって固定し、キャピラリ２１から送出されたボンディングワイヤ８を用いて半導体素子４のボンディングパッドにボールボンディングを実施する。   In FIG. 14, 20 is a heat stage of a wire bonding apparatus (not shown), and 21 is a capillary having a narrow hole for passing the bonding wire 8 through the shaft core. After the adhesive 17 is cured, as shown in FIG. 14, the outer periphery of the wire bonding area of the inner lead portion 6 is fixed by a fixing jig (not shown) on the flat heat stage 20, and the capillary 21 Ball bonding is performed on the bonding pads of the semiconductor element 4 using the bonding wires 8 sent out from.

次に、図１５および図１６に示すように、下側放熱板５に固着された半導体素子４のボンディングパッドとインナーリード部６とをボンディングワイヤ８により電気的に接続する（ワイヤボンディング）。ボンディングワイヤ８としては、直径２０〜３５μｍのＡｕワイヤなどを用いる。   Next, as shown in FIGS. 15 and 16, the bonding pads of the semiconductor element 4 fixed to the lower heat radiating plate 5 and the inner lead portions 6 are electrically connected by bonding wires 8 (wire bonding). As the bonding wire 8, an Au wire having a diameter of 20 to 35 μm is used.

このようにして、各単位リードフレームごとに、下側放熱板５上に半導体素子４を載置するダイボンディングと、半導体素子４の各ボンディングパッドと各インナーリード部６をボンディングワイヤ８によりそれぞれ電気的に接続するワイヤボンディングを実施した後、各単位リードフレームを一括して樹脂封止して封止樹脂体１２群を同時成形する。   In this way, for each unit lead frame, die bonding for mounting the semiconductor element 4 on the lower heat sink 5, and each bonding pad of the semiconductor element 4 and each inner lead portion 6 are electrically connected by the bonding wires 8. After wire bonding is performed, the unit lead frames are collectively sealed with resin to simultaneously mold the sealing resin body 12 group.

続いて、樹脂封止工程を説明する。図１７は樹脂封止するためのトランスファ成型装置の要部拡大断面図である。図１７において、２２、２３は封止樹脂体１２を成型するための上金型と下金型である。この上金型２２と下金型２３からなる成型金型は、シリンダ装置（図示せず）によって型締めされる。また、２４、２５は上位キャビティと下位キャビティである。成型金型の樹脂注入部分であるキャビティ単体は上位キャビティ２４と下位キャビティ２５からなる。成型金型には、複数の単位リードフレームを一括して樹脂封止するために、キャビティが複数設けられている。   Subsequently, the resin sealing step will be described. FIG. 17 is an enlarged cross-sectional view of a main part of a transfer molding apparatus for resin sealing. In FIG. 17, 22 and 23 are an upper mold and a lower mold for molding the sealing resin body 12. The molding die composed of the upper die 22 and the lower die 23 is clamped by a cylinder device (not shown). Reference numerals 24 and 25 denote an upper cavity and a lower cavity. A single cavity, which is a resin injection portion of the molding die, includes an upper cavity 24 and a lower cavity 25. The molding die is provided with a plurality of cavities in order to collectively seal a plurality of unit lead frames with resin.

２６は上金型２２の合わせ面に開設されるポット、２７はポット２６に挿入されるプランジャである。プランジャ２７は、シリンダ装置（図示せず）により進退されて成形材料としての樹脂を送給する。   26 is a pot opened on the mating surface of the upper mold 22, and 27 is a plunger inserted into the pot 26. The plunger 27 is advanced and retracted by a cylinder device (not shown) to feed resin as a molding material.

２８はカル、２９はランナ、３０はゲートである。カル２８は、下金型２３の合わせ面のポット２６との対向位置に形成されている。下金型２３に形成されるランナ２９は、下位キャビティ２５に樹脂を流し込む経路のうちのカル２８からゲート３０までの部分であり、各キャビティのランナ２９がカル２８にそれぞれ接続している。各ランナ２９に接続する各ゲート３０は、樹脂を各下位キャビティ２５内に注入し得るように、下金型２３に形成されている。   28 is a cal, 29 is a runner, and 30 is a gate. The cull 28 is formed at a position facing the pot 26 on the mating surface of the lower mold 23. The runner 29 formed in the lower mold 23 is a portion from the cull 28 to the gate 30 in the path for flowing the resin into the lower cavity 25, and the runner 29 of each cavity is connected to the cull 28. Each gate 30 connected to each runner 29 is formed in the lower mold 23 so that resin can be injected into each lower cavity 25.

３１は下金型２３の合わせ面に形成されている逃がし部である。逃がし部３１は、各単位リードフレームの周辺部（具体的には、外枠２、内枠３、アウターリード部９、タイバー部１１）が樹脂から逃げ得るように形成されている。逃がし部３１の形状は、単位リードフレームの周辺部よりも若干大きい矩形状であり、その深さはリードフレームの厚さよりも若干浅い深さである。このような構成のトランスファ成型装置を用いて、樹脂封止は以下のように行われる。   Reference numeral 31 denotes an escape portion formed on the mating surface of the lower mold 23. The escape portion 31 is formed so that the peripheral portions (specifically, the outer frame 2, the inner frame 3, the outer lead portion 9, and the tie bar portion 11) of each unit lead frame can escape from the resin. The shape of the relief portion 31 is a rectangular shape that is slightly larger than the peripheral portion of the unit lead frame, and the depth thereof is slightly shallower than the thickness of the lead frame. Resin sealing is performed as follows using the transfer molding apparatus having such a configuration.

１８０°Ｃ程度に加熱された成型金型の逃がし部３１に各単位リードフレームの周辺部を位置決めして、成型金型を型締めする。次に、円錐形に打錠された樹脂（図示せず）をポット２６に挿入し、プランジャ２７により樹脂をカル２８、各ランナ２９、各ゲート３０を通じて各キャビティに圧入する。キャビティ注入後、樹脂が熱硬化されて封止樹脂体１２が形成されると、上金型２２および下金型２３を型開きするとともに、エジェクタ（図示せず）により封止樹脂体１２群を離型して、樹脂成形されたリードフレームをトランスファ成形装置から脱装する。   The peripheral portion of each unit lead frame is positioned in the relief portion 31 of the molding die heated to about 180 ° C., and the molding die is clamped. Next, a resin (not shown) compressed in a conical shape is inserted into the pot 26, and the resin is press-fitted into each cavity through the cull 28, each runner 29, and each gate 30 by the plunger 27. After the cavity injection, when the resin is thermoset to form the sealing resin body 12, the upper mold 22 and the lower mold 23 are opened, and the sealing resin body 12 group is moved by an ejector (not shown). After releasing the mold, the resin-molded lead frame is detached from the transfer molding apparatus.

このようにして、封止樹脂体１２の内部には、半導体素子４、下側放熱板５、インナーリード部６、ボンディングワイヤ８、上側放熱板１４ａが樹脂封止され、外枠２、内枠３、吊りリード部７の一部、アウターリード部９、タイバー部１１が封止樹脂体１２から突出することとなる。   In this manner, the semiconductor element 4, the lower heat radiating plate 5, the inner lead portion 6, the bonding wire 8, and the upper heat radiating plate 14a are resin-sealed inside the sealing resin body 12, and the outer frame 2, the inner frame 3. A part of the suspension lead part 7, the outer lead part 9, and the tie bar part 11 protrude from the sealing resin body 12.

次に、リードフレームの封止樹脂体１２から突出している部分に半田外装メッキを施す（図示せず）。半田外装メッキを経た後、あるいは半田外装メッキされる前に、リードフレーム１の不要箇所、すなわち吊りリード部７の一部、ダイバー部１１、外枠２、内枠３を切断した後、アウターリード部９をガルウイング形状に屈曲成型する。以上のようにして、半導体装置を完成することができる。なお、少なくとも半導体装置の完成品となる部分に予めＰｄメッキが施されている場合には、半田外装メッキは必要としない。   Next, solder exterior plating is applied to the portion of the lead frame protruding from the sealing resin body 12 (not shown). After the solder outer plating is performed or before the solder outer plating is performed, unnecessary portions of the lead frame 1, that is, a part of the suspension lead portion 7, the diver portion 11, the outer frame 2, and the inner frame 3 are cut, and then the outer lead. The part 9 is bent into a gull wing shape. As described above, a semiconductor device can be completed. It should be noted that solder exterior plating is not required when Pd plating is applied in advance to at least a portion that is a finished product of the semiconductor device.

本発明にかかる半導体装置とその製造方法は、放熱性を損なわず実装信頼性を向上させた半導体装置の安定生産を可能とし、車載用ＤＶＤ、ＤＴＶ等の高消費電力商品に有用である。 The semiconductor device and its manufacturing how according to the present invention enables the stable production of a semiconductor device with improved mounting reliability without impairing heat radiation, automotive DVD, is useful in high power products DTV or the like.

（ａ）は本発明の実施の形態における半導体装置に用いるリードフレームの第１の例を示す平面図、（ｂ）は同リードフレームの一部拡大平面図(A) is a top view which shows the 1st example of the lead frame used for the semiconductor device in embodiment of this invention, (b) is a partial enlarged plan view of the lead frame. 同リードフレームの底面図Bottom view of the lead frame 同リードフレームを用いた半導体装置の断面図Sectional view of a semiconductor device using the lead frame （ａ）は同リードフレームの一部平面図、（ｂ）は同リードフレームを用いた半導体装置に発生する収縮応力を説明するための模式図、（ｃ）は同リードフレームを用いた半導体装置の断面図(A) is a partial plan view of the lead frame, (b) is a schematic diagram for explaining shrinkage stress generated in a semiconductor device using the lead frame, and (c) is a semiconductor device using the lead frame. Cross section of （ａ）は本発明の実施の形態における半導体装置に用いるリードフレームの第２の例を示す平面図、（ｂ）は同リードフレームの一部拡大平面図(A) is a top view which shows the 2nd example of the lead frame used for the semiconductor device in embodiment of this invention, (b) is a partial enlarged plan view of the lead frame. 同リードフレームを用いた半導体装置の断面図Sectional view of a semiconductor device using the lead frame （ａ）は本発明の実施の形態における半導体装置に用いるリードフレームの第３の例を示す平面図、（ｂ）は同リードフレームの一部拡大平面図(A) is a top view which shows the 3rd example of the lead frame used for the semiconductor device in embodiment of this invention, (b) is a partial enlarged plan view of the lead frame. 同リードフレームを用いた半導体装置の断面図Sectional view of a semiconductor device using the lead frame （ａ）は本発明の実施の形態における半導体装置に用いるリードフレームの第４の例を示す平面図、（ｂ）は同リードフレームの一部拡大平面図(A) is a top view which shows the 4th example of the lead frame used for the semiconductor device in embodiment of this invention, (b) is a partial enlarged plan view of the lead frame. 同リードフレームを用いた半導体装置の断面図Sectional view of a semiconductor device using the lead frame 本発明の実施の形態における半導体装置の上側放熱板の形状を示す平面図The top view which shows the shape of the upper side heat sink of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置のダイボンディングの前工程を説明するための工程断面図Sectional drawing for demonstrating the pre-process of die bonding of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置のダイボンディング工程を説明するための工程断面図Sectional drawing for demonstrating the die-bonding process of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置のボールボンディング工程を説明するための工程断面図Sectional drawing for demonstrating the ball bonding process of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置のワイヤボンディング工程を説明するための工程断面図Sectional drawing for demonstrating the wire bonding process of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置のワイヤボンディング工程を説明するための工程断面図Sectional drawing for demonstrating the wire bonding process of the semiconductor device in embodiment of this invention 本発明の実施の形態における半導体装置の樹脂封止工程を説明するための工程断面図Sectional drawing for demonstrating the resin sealing process of the semiconductor device in embodiment of this invention （ａ）は従来の半導体装置に用いるリードフレームを示す平面図、（ｂ）は同リードフレームの一部拡大断面図(A) is a top view which shows the lead frame used for the conventional semiconductor device, (b) is a partial expanded sectional view of the lead frame. 同リードフレームを用いた半導体装置の断面図Sectional view of a semiconductor device using the lead frame （ａ）は従来の半導体装置に用いるリードフレームの一部平面図、（ｂ）は同リードフレームを用いた半導体装置に発生する収縮応力を説明するための模式図、（ｃ）は同リードフレームを用いた半導体装置の断面図(A) is a partial plan view of a lead frame used in a conventional semiconductor device, (b) is a schematic diagram for explaining shrinkage stress generated in a semiconductor device using the lead frame, and (c) is the lead frame. Sectional view of a semiconductor device using

符号の説明Explanation of symbols

１ リードフレーム
２ 外枠
３ 内枠
４ 半導体素子
５ 下側放熱板
６ インナーリード部
７ 吊りリード部
８ ボンディングワイヤ
９ アウターリード部
１０ リード
１１ タイバー部
１２ 封止樹脂体
１３ 開口部
１４ａ〜１４ｄ 上側放熱板
１５ 収縮応力の強さを表した矢印
１６ ステージ
１７ 接着剤
１８ ディスペンサ
１９ コレット
２０ ヒートステージ
２１ キャピラリ
２２ 上金型
２３ 下金型
２４ 上位キャビティ
２５ 下位キャビティ
２６ ポット
２７ プランジャ
２８ カル
２９ ランナ
３０ ゲート
３１ 逃がし部 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Outer frame 3 Inner frame 4 Semiconductor element 5 Lower side heat sink 6 Inner lead part 7 Hanging lead part 8 Bonding wire 9 Outer lead part 10 Lead 11 Tie bar part 12 Sealing resin body 13 Opening part 14a-14d Upper side heat dissipation Plate 15 Arrow representing strength of contraction stress 16 Stage 17 Adhesive 18 Dispenser 19 Collet 20 Heat stage 21 Capillary 22 Upper mold 23 Lower mold 24 Upper cavity 25 Lower cavity 26 Pot 27 Plunger 28 Cal 29 Runner 30 Gate 31 Relief part

Claims (7)

半導体素子を樹脂で封止した封止樹脂体から前記半導体素子に電気的に接続する複数本のリードのアウターリード部が突出している半導体装置であって、前記封止樹脂体内に、
前記各リードのインナーリード部と、
前記各インナーリード部を前記半導体素子と電気的に接続するための複数本の金属細線と、
前記半導体素子が載置され、前記各インナーリード部の底面に接着された下側放熱部材と、
前記半導体素子が載置される第１の領域と前記各金属細線が前記各インナーリード部に接続される第２の領域が開放され、前記各インナーリード部の上面に接着された上側放熱部材と、
が密閉されており、前記上側放熱部材が前記第１の領域と前記第２の領域の間にも形成されていることを特徴とする半導体装置。 A semiconductor device in which an outer lead portion of a plurality of leads electrically connected to the semiconductor element protrudes from a sealing resin body in which the semiconductor element is sealed with a resin, and in the sealing resin body,
An inner lead portion of each lead;
A plurality of fine metal wires for electrically connecting the inner lead portions to the semiconductor element;
A lower heat dissipating member on which the semiconductor element is mounted and bonded to the bottom surface of each inner lead part ;
The first region and the a second region open to the thin metal wires are connected to the respective inner lead portions, the upper heat radiating member adhered the to the upper surface of each inner lead portion before Symbol semiconductor element is mounted When,
Is sealed, and the upper heat radiating member is also formed between the first region and the second region . 請求項１記載の半導体装置であって、前記上側放熱部材で覆われた前記各リードの間は樹脂で充填されていることを特徴とする半導体装置。 2. The semiconductor device according to claim 1, wherein a space between each of the leads covered with the upper heat dissipation member is filled with a resin . 請求項１記載の半導体装置であって、前記下側放熱部材で覆われた前記各リードの間は樹脂で充填されていることを特徴とする半導体装置。 2. The semiconductor device according to claim 1 , wherein a space between each of the leads covered with the lower heat radiating member is filled with a resin . 請求項１記載の半導体装置であって、前記上側放熱部材と前記下側放熱部材で挟み込まれた前記各リードの間は樹脂で充填されていることを特徴とする半導体装置。 2. The semiconductor device according to claim 1, wherein a space between each of the leads sandwiched between the upper heat radiating member and the lower heat radiating member is filled with a resin . 請求項１ないし４のいずれかに記載の半導体装置であって、前記上側放熱部材は、前記下側放熱部材と材質が同じで厚みが異なることを特徴とする半導体装置。 5. The semiconductor device according to claim 1, wherein the upper heat radiating member is made of the same material as the lower heat radiating member but has a different thickness . 請求項１ないし４のいずれかに記載の半導体装置であって、前記上側放熱部材は、前記下側放熱部材と厚みが同じで、線形膨張係数が前記下側放熱部材よりも大きい材質であることを特徴とする半導体装置。 5. The semiconductor device according to claim 1, wherein the upper heat radiating member is the same material as the lower heat radiating member and has a larger linear expansion coefficient than the lower heat radiating member. A semiconductor device characterized by the above. 半導体素子を樹脂で封止した封止樹脂体から前記半導体素子に電気的に接続する複数本のリードのアウターリード部が突出している半導体装置を製造する方法であって、A method of manufacturing a semiconductor device in which outer lead portions of a plurality of leads electrically connecting to a semiconductor element from a sealing resin body in which a semiconductor element is sealed with resin protrudes,
前記半導体素子が載置される下側放熱部材が前記各リードのインナーリード部の底面に接着され、かつ前記半導体素子が載置される第１の領域と前記各インナーリード部に各金属細線が接続される第２の領域が開放されている上側放熱部材が前記各インナーリード部の上面に接着されているリードフレームの前記下側放熱部材に、前記上側放熱部材の前記第１の領域を通じて前記半導体素子を載置する工程と、The lower heat dissipation member on which the semiconductor element is placed is bonded to the bottom surface of the inner lead portion of each lead, and each thin metal wire is formed on the first region on which the semiconductor element is placed and each inner lead portion. The upper heat radiating member to which the second region to be connected is open is bonded to the lower heat radiating member of the lead frame bonded to the upper surface of each inner lead portion, and the first heat radiating member through the first region of the upper heat radiating member. Placing a semiconductor element;
前記半導体素子の各ボンディングパッドと前記各インナーリード部を、前記上側放熱部材の前記第１の領域と前記第２の領域を通じて金属細線でそれぞれ接続する工程と、Connecting each bonding pad of the semiconductor element and each of the inner lead portions with a thin metal wire through the first region and the second region of the upper heat dissipation member, respectively;
前記各リードのアウターリード部が前記封止樹脂体から突出し、かつ前記各インナーリード部と前記下側放熱部材と前記上側放熱部材と前記半導体素子と前記各金属細線とが密閉されるように樹脂で封止する工程と、Resin so that the outer lead portion of each lead protrudes from the sealing resin body, and the inner lead portion, the lower heat radiating member, the upper heat radiating member, the semiconductor element, and the metal thin wires are sealed. Sealing with,
を具備し、前記上側放熱部材が前記第１の領域と前記第２の領域の間にも形成されていることを特徴とする半導体装置の製造方法。And the upper heat radiating member is also formed between the first region and the second region.
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