JP2008147267A - Semiconductor device and manufacturing method therefor, and lead frame with radiation board - Google Patents

Semiconductor device and manufacturing method therefor, and lead frame with radiation board Download PDF

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Publication number
JP2008147267A
JP2008147267A JP2006330057A JP2006330057A JP2008147267A JP 2008147267 A JP2008147267 A JP 2008147267A JP 2006330057 A JP2006330057 A JP 2006330057A JP 2006330057 A JP2006330057 A JP 2006330057A JP 2008147267 A JP2008147267 A JP 2008147267A
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heat sink
lead
region
mounting region
peripheral side
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Masayuki Yugawa
昌行 湯川
Naoto Nishiu
直人 西宇
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit the warp of a resin sealing body, to improve the solderability of a lead exposed to the outside, and to stabilize the shape of a metallic small-gage wire for connection inside the resin-encapsulated body, in a resin encapsulated type semiconductor device. <P>SOLUTION: In the semiconductor device, a semiconductor chip 1 is loaded at the center section of a radiation board 2 and is connected at one end sections of a plurality of leads 3, fixed on the outer peripheral section of the radiation board 2 by the metallic small-gauge wires 4. The semiconductor chip 1, the radiation board 2, the metallic small-gage wires 4 and one end sections of the leads 3 are coated with the resin-sealing body 5. In the semiconductor device, stepped sections 12 and 14 are formed, at least two places between the outer end sections, in each internal lead section 3a and a fitting section to the radiation board 2 and in between the inner peripheral side of a lead-fitting region in the radiation board 2 and the outer peripheral side of an element loading region 11 in the radiation board 2; and the semiconductor device is formed into a structure, arranging the region 15 at least between the element loading region 11 in the radiation board 2 and the lead fitting region, at the center section in the thickness direction of the resin sealing body 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体装置とその製造方法、および放熱板付きリードフレームに関する。   The present invention relates to a semiconductor device, a manufacturing method thereof, and a lead frame with a heat sink.

近年の電子機器の小型化、多機能化に対応するために、半導体装置においては薄型で良好な放熱性を有するものが要望されている。かかる半導体装置として、放熱板を内蔵したＱＦＰ（Quad Flat Package）型の半導体装置がある。   In order to cope with the recent downsizing and multi-functionalization of electronic devices, semiconductor devices that are thin and have good heat dissipation are desired. As such a semiconductor device, there is a QFP (Quad Flat Package) type semiconductor device including a heat sink.

図１０（ａ）は従来のＱＦＰ型の半導体装置の断面図である。半導体チップ１は、放熱板２の中央部に固定され、放熱板２の外周部に固定された複数のリード３の内部リード部３ａに金属細線４により接続されており、半導体チップ１、放熱板２、金属細線４、および内部リード部３ａは、樹脂封止体５で封止され保護されている。樹脂封止体５はパッケージ外形をなすもので、その外部に露出している外部リード部３ｂはガルウイング形状に屈曲加工されている。６は接着剤、７は絶縁テープである。   FIG. 10A is a cross-sectional view of a conventional QFP type semiconductor device. The semiconductor chip 1 is fixed to the central portion of the heat sink 2 and is connected to the internal lead portions 3a of the plurality of leads 3 fixed to the outer periphery of the heat sink 2 by metal thin wires 4. 2, the fine metal wire 4 and the internal lead portion 3a are sealed and protected by a resin sealing body 5. The resin sealing body 5 forms a package outer shape, and the external lead portion 3b exposed to the outside is bent into a gull wing shape. 6 is an adhesive and 7 is an insulating tape.

図１０（ｂ）は上記の半導体装置を半導体チップ１および樹脂封止体５を仮想線で示し金属細線４を除いた平面図である。放熱板２は平坦であり、中央部に半導体チップ１の搭載領域（以下、チップ搭載領域という）が設定されている。複数のリード３は、上述の屈曲加工前の状態で図示しているが、放熱板２の外形に沿う方向に所定の間隔で配列され固定されている。   FIG. 10B is a plan view of the semiconductor device, in which the semiconductor chip 1 and the resin sealing body 5 are shown by phantom lines, and the thin metal wires 4 are removed. The heat radiating plate 2 is flat, and a mounting area of the semiconductor chip 1 (hereinafter referred to as a chip mounting area) is set at the center. The plurality of leads 3 are illustrated in a state before the bending process described above, but are arranged and fixed at predetermined intervals in a direction along the outer shape of the heat sink 2.

ところが、上述の半導体装置の製造の際には、放熱板２と複数のリード３とが一体化された放熱板付きリードフレームを用い、リード３を上下の封止金型間に挟んでトランスファーモルド法により樹脂封止しているので、樹脂封止体５の厚み方向における中央部にリード３が位置し、そのリード３の片側に放熱板２が位置し、放熱板２の上下の樹脂厚みが異なることとなり、上下の樹脂の硬化収縮量に差が生じ、樹脂封止体５の反りが発生する。この反りは、不均一な領域（放熱板２領域）が広くなるほど、また不均一な比率が大きくなるほど、大きくなる。図１０（ａ）に示すように放熱板２が大きい場合は不均一な領域が広くなるため、また樹脂封止体５の総厚が薄い場合は放熱板２の上下の樹脂厚みの比率が大きく異なることとなるため、反りは大きくなる。   However, in manufacturing the semiconductor device described above, a transfer mold is used in which a lead frame with a heat sink, in which the heat sink 2 and a plurality of leads 3 are integrated, is sandwiched between the upper and lower sealing molds. Since the resin sealing is performed by the method, the lead 3 is located at the center in the thickness direction of the resin sealing body 5, the radiator plate 2 is located on one side of the lead 3, and the upper and lower resin thicknesses of the radiator plate 2 are It becomes different, a difference arises in the curing shrinkage amount of the upper and lower resins, and the warpage of the resin sealing body 5 occurs. This warpage increases as the non-uniform area (heat radiating plate 2 area) becomes wider and as the non-uniform ratio increases. As shown in FIG. 10A, when the heat sink 2 is large, the non-uniform region is widened. When the total thickness of the resin sealing body 5 is thin, the ratio of the resin thickness above and below the heat sink 2 is large. Since it will be different, the warpage will increase.

この樹脂封止体５の反りは、放熱板２の上側の樹脂厚みよりも放熱板２の下側の樹脂厚みが薄いことから、樹脂封止体５の裏面（図１０（ａ）における下面をいう）が凸になる方向に発生し、複数の外部リード部３ｂの下面の平坦性を損ない、半導体装置の実装時のはんだ付け性の低下の原因となる。   The warpage of the resin sealing body 5 is such that the resin thickness on the lower side of the heat sink 2 is thinner than the resin thickness on the upper side of the heat sink 2, so that the bottom surface of the resin sealing body 5 (the lower surface in FIG. ) Occurs in a convex direction, which impairs the flatness of the lower surfaces of the plurality of external lead portions 3b and causes a decrease in solderability when the semiconductor device is mounted.

更に、近年の高密度化により、搭載される半導体チップ１のサイズも小さくなっているため、チップサイズが大きい場合のようなチップの剛性による反り抑制効果が得られず、放熱板２の上下の樹脂厚みの差による影響を受け易くなり、樹脂封止体５の反り量が増加する傾向にある。   Further, since the size of the semiconductor chip 1 to be mounted has been reduced due to the recent increase in density, the effect of suppressing the warp due to the rigidity of the chip as in the case where the chip size is large cannot be obtained. It tends to be affected by the difference in resin thickness, and the amount of warpage of the resin sealing body 5 tends to increase.

この樹脂封止体５の反りを抑制するために、図１１に示すように、放熱板２を、チップ搭載領域が外周部との間に段差を有する形状として、つまり外周部がチップ搭載領域よりも低くなる形状として、チップ搭載領域の表裏における封止樹脂厚を均等にすることが提案されている（特許文献１）。
特開２００５−２３５７９３公報 In order to suppress the warpage of the resin sealing body 5, as shown in FIG. 11, the heat radiating plate 2 is formed in a shape having a step between the chip mounting region and the outer peripheral portion. It has been proposed that the thickness of the sealing resin on the front and back sides of the chip mounting area be uniform (see Patent Document 1).
JP 2005-235793 A

しかし上記したように放熱板２に段差を設けることでチップ搭載領域の表裏の樹脂厚を均等にすると、半導体チップ１上の樹脂厚がチップ搭載領域下の樹脂厚よりも薄くなることとなり、段差を設けない従来構造とは逆に、樹脂封止体５の中央部の表面が凸になる方向の反りが発生することがある。そしてその場合に、樹脂封止体５の外周部で大きな反り量となり、この外周部から突出した外部リード部３ｂの下面の平坦性を損なう結果となる。   However, if the resin thickness on the front and back sides of the chip mounting area is equalized by providing a step in the heat sink 2 as described above, the resin thickness on the semiconductor chip 1 becomes thinner than the resin thickness under the chip mounting area. Contrary to the conventional structure in which no resin is provided, a warp in the direction in which the surface of the central portion of the resin sealing body 5 becomes convex may occur. In that case, a large amount of warpage occurs at the outer peripheral portion of the resin sealing body 5, and the flatness of the lower surface of the external lead portion 3 b protruding from the outer peripheral portion is impaired.

また段差を設けない従来構造に比べて、樹脂封止体５の全体の樹脂厚および内部リード部３ａの位置を同等とした場合には、半導体チップ１の位置はより高くなり、半導体チップ１上の樹脂厚はより薄くなるので、半導体チップ１と内部リード部３ａとを接続する金属細線４の高さも制限されることとなり、金属細線４の形状の安定化が困難となる。   Further, when the overall resin thickness of the resin sealing body 5 and the position of the internal lead portion 3a are made equal compared to the conventional structure in which no step is provided, the position of the semiconductor chip 1 becomes higher and the position on the semiconductor chip 1 Since the thickness of the resin becomes thinner, the height of the fine metal wire 4 connecting the semiconductor chip 1 and the internal lead portion 3a is also limited, and it becomes difficult to stabilize the shape of the fine metal wire 4.

本発明は、上記問題に鑑み、樹脂封止体の反りを抑え、その外部に露出したリードのはんだ付け性を向上させるとともに、金属細線の形状を安定化させることを目的とする。   In view of the above problems, an object of the present invention is to suppress warping of a resin-encapsulated body, improve the solderability of a lead exposed to the outside, and stabilize the shape of a thin metal wire.

上記課題を解決するために、本発明の半導体装置は、半導体素子と、前記半導体素子を中央部に搭載した放熱板と、前記放熱板の外周部に一端部が取付けられた複数のリードと、前記半導体素子と前記リードの一端部とを電気的に接続した金属細線と、前記半導体素子と放熱板と金属細線とリードの一端部とを封止した樹脂封止部とを有した半導体装置において、前記樹脂封止部により封止された各リードの内部リード部における外端部と前記放熱板への取付け部との間と、前記放熱板におけるリード取付け領域の内周側と、前記放熱板における素子搭載領域の外周側との内、少なくとも２箇所に段差部が形成されていて、前記放熱板における少なくとも素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されていることを特徴とする。   In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element, a heat sink having the semiconductor element mounted in a central portion thereof, a plurality of leads having one end attached to an outer peripheral portion of the heat sink, In a semiconductor device comprising: a thin metal wire electrically connecting the semiconductor element and one end portion of the lead; and a resin sealing portion sealing the semiconductor element, the heat sink, the thin metal wire, and one end portion of the lead. , Between the outer end portion of the inner lead portion of each lead sealed by the resin sealing portion and the mounting portion to the heat sink, the inner peripheral side of the lead mounting region of the heat sink, and the heat sink Step portions are formed in at least two locations of the outer peripheral side of the element mounting region in the substrate, and at least the region between the element mounting region and the lead mounting region in the heat sink is in the thickness direction of the resin sealing portion. During ~ Characterized in that it is arranged in part.

放熱板の少なくとも素子搭載領域とリード取付け領域との間の領域を樹脂封止部の厚み方向における中央部に配置する構造なので、樹脂の硬化時の収縮による樹脂封止部の反りを防止することができ、樹脂封止部から突き出た複数のリードの下面の平坦性が向上する。よって、この半導体装置の実装の際のはんだ付け性が安定する。   The structure between the heat sink and at least the area between the device mounting area and the lead mounting area is located in the center of the resin sealing part in the thickness direction, preventing the resin sealing part from warping due to shrinkage when the resin is cured. Thus, the flatness of the lower surfaces of the plurality of leads protruding from the resin sealing portion is improved. Therefore, the solderability when mounting the semiconductor device is stabilized.

かかる半導体装置は、各内部リード部は直線状に延び、放熱板における素子搭載領域の外周側に第１の段差部が形成され、リード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されている構造であってよい。   In such a semiconductor device, each internal lead portion extends linearly, a first step portion is formed on the outer peripheral side of the element mounting region in the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region. The region between the element mounting region and the lead mounting region of the heat sink is disposed at the center in the thickness direction of the resin sealing portion, and the element mounting region is in the thickness direction of the resin sealing portion. It may be the structure arrange | positioned lower than the center part in.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域の外周側の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されている構造であってもよい。   A first step portion is formed between the outer end portion of each internal lead portion and the attachment portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region in the heat sink, The region on the outer peripheral side of the element mounting region of the heat sink is disposed at the central portion in the thickness direction of the resin sealing portion, and the element mounting region is lower than the central portion in the thickness direction of the resin sealing portion. The arranged structure may be used.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成され、リード取付け領域の内周側に第３の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されている構造であってもよい。   A first step portion is formed between the outer end portion of each internal lead portion and the attachment portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region in the heat sink, A third step portion is formed on the inner peripheral side of the region, and a region between the element mounting region and the lead mounting region of the heat sink is disposed at the central portion in the thickness direction of the resin sealing portion. The element mounting region may be arranged at a position lower than the central portion in the thickness direction of the resin sealing portion.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板におけるリード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板のリード取付け領域の内側の領域が前記樹脂封止部の厚み方向における中央部に配置されている構造であってもよい。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region of the heat sink. A structure in which a region inside the lead mounting region of the heat radiating plate is disposed at a central portion in the thickness direction of the resin sealing portion may be employed.

上記の各構造とも、各段差部が、半導体素子を搭載した素子搭載領域、素子搭載領域とリード取付け領域との間の領域、リード取付け領域、それぞれの表裏における樹脂厚みの不均一を均等な方向に補う構造である。   In each of the above structures, each stepped portion has a uniform direction in which an element mounting area on which a semiconductor element is mounted, an area between the element mounting area and the lead mounting area, a lead mounting area, and unevenness in resin thickness on each front and back It is a structure to compensate for.

上記の半導体装置に用いられる本発明の放熱板付きリードフレームは、半導体素子を中央部に搭載するための放熱板と、前記放熱板の外周部に一端部が取付けられた複数のリードと、前記複数のリードを所定の間隔で保持したフレーム枠とを有し、樹脂封止される各リードの内部リード部における外端部と前記放熱板への取付け部との間と、前記放熱板におけるリード取付け領域の内周側と、前記放熱板における素子搭載領域の外周側との内、少なくとも２箇所に段差部が形成されていて、前記放熱板における少なくとも素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されていることを特徴とする。   The lead frame with a heat sink of the present invention used for the above semiconductor device includes a heat sink for mounting a semiconductor element in a central portion, a plurality of leads having one end attached to the outer peripheral portion of the heat sink, A frame having a plurality of leads held at predetermined intervals, and between the outer end portion of the inner lead portion of each lead to be resin-sealed and the mounting portion to the heat sink, and the lead in the heat sink Step portions are formed in at least two locations of the inner peripheral side of the mounting region and the outer peripheral side of the element mounting region in the heat sink, and at least between the element mounting region and the lead mounting region in the heat sink. The region is arranged at a predetermined height with respect to the outer end portion of the internal lead portion.

かかる放熱板付きリードフレームは、各内部リード部は直線状に延びており、放熱板における素子搭載領域の外周側に第１の段差部が形成され、リード取付け領域の内周側に第２の段差部が形成されていて、前記素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている構造であってよい。   In such a lead frame with a heat sink, each internal lead portion extends linearly, a first step portion is formed on the outer peripheral side of the element mounting region in the heat sink, and a second step is formed on the inner peripheral side of the lead mounting region. A step portion is formed, and a region between the element mounting region and the lead mounting region is disposed at a predetermined height with respect to an outer end portion of the internal lead portion, and the device mounting region is the internal lead portion. It may be the structure arrange | positioned lower than the outer-end part.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域の外周側の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている構造であってもよい。   A first step portion is formed between the outer end portion of each internal lead portion and the attachment portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region in the heat sink, A region on the outer peripheral side of the element mounting region of the heat sink is disposed at a predetermined height with respect to the outer end portion of the internal lead portion, and the element mounting region is disposed lower than the outer end portion of the internal lead portion. It may be a structure.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成され、リード取付け領域の内周側に第３の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている構造であってもよい。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region of the heat sink. A third step portion is formed on the inner peripheral side of the region, and a region between the element mounting region and the lead mounting region of the heat sink is disposed at a predetermined height with respect to the outer end portion of the inner lead portion. The element mounting area may be disposed lower than the outer end portion of the internal lead portion.

各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板におけるリード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板の第２の段差部よりも内側の領域が前記内部リード部の外端部に対する所定の高さに配置されている構造であってもよい。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region of the heat sink. A structure in which a region inside the second step portion of the heat radiating plate is disposed at a predetermined height with respect to the outer end portion of the internal lead portion may be employed.

半導体装置を製造する際には、上記の放熱板付きリードフレームを用い、放熱板の中央部に半導体素子を搭載する工程と、前記放熱板上の半導体素子と前記放熱板の外周部に取付けられている各リードの一端部とを金属細線により電気的に接続する工程と、前記半導体素子と放熱板と金属細線と各リードの内部リード部とを封止金型を用いて樹脂封止する工程とを行う。   When manufacturing a semiconductor device, the above-described lead frame with a heat sink is used to mount a semiconductor element in the center of the heat sink, and the semiconductor element on the heat sink and the outer periphery of the heat sink are attached. Electrically connecting one end of each lead with a fine metal wire, and resin-sealing the semiconductor element, the heat sink, the fine metal wire, and the internal lead portion of each lead with a sealing mold And do.

放熱板には、その素子搭載領域に開口した貫通孔と、前記素子搭載領域の外周側に当該素子搭載領域から外周方向に延びたスリットとの内、少なくとも一方を形成しておくのが好ましい。段差部を形成するときに放熱板に発生する反りやたわみを抑えて平坦性を向上させることができるからである。よって、放熱板あるいはその上に搭載される半導体素子の上側と放熱板の下側の樹脂厚が安定するとともに、放熱板に対する半導体素子の搭載性や封止樹脂との密着性が安定する。また放熱板と半導体素子との接着面積が少なくなるため、それに用いる接着剤の吸湿を低減することができ、半導体装置の実装時の熱による樹脂封止部のクラックを防止することができ、半導体装置の信頼性が向上する。スリットを有する場合は、スリット内にも樹脂が充填されることとなり、そのアンカー効果により放熱板と樹脂との剥離を防止することができ、半導体装置の信頼性が向上する。   It is preferable to form at least one of a through hole opened in the element mounting area and a slit extending in the outer peripheral direction from the element mounting area on the outer peripheral side of the element mounting area. This is because it is possible to improve the flatness by suppressing the warpage and deflection generated in the heat sink when forming the stepped portion. Therefore, the resin thickness of the upper side of the heat sink or the semiconductor element mounted thereon and the lower side of the heat sink is stabilized, and the mountability of the semiconductor element to the heat sink and the adhesion with the sealing resin are stabilized. In addition, since the bonding area between the heat sink and the semiconductor element is reduced, moisture absorption of the adhesive used therefor can be reduced, and cracking of the resin sealing portion due to heat during mounting of the semiconductor device can be prevented. The reliability of the device is improved. When the slit is provided, the resin is filled in the slit, and the anchor effect can prevent the heat sink and the resin from being peeled off, thereby improving the reliability of the semiconductor device.

以上のように本発明によれば、半導体素子を搭載する放熱板やリードに段差部を設けることにより、樹脂封止部の反りを抑え、樹脂封止部外へ引き出された複数のリードの下面の平坦性を向上させることができ、半導体装置の実装の際のはんだ付け性が安定し、実装信頼性が向上する。   As described above, according to the present invention, by providing a stepped portion on a heat sink or lead on which a semiconductor element is mounted, the warping of the resin sealing portion is suppressed, and the lower surfaces of a plurality of leads drawn out of the resin sealing portion. The flatness of the semiconductor device can be improved, the solderability when mounting the semiconductor device is stabilized, and the mounting reliability is improved.

以下、本発明の実施の形態について、図面を参照しながら説明する。以下の各実施の形態においては、先に図１０を用いて説明した従来の半導体装置におけるのと同様の部材に同じ符号を付す。
（実施の形態１）
図１（ａ）は本発明の実施の形態１における半導体装置の構成を示す断面図であり、図１（ｂ）は同半導体装置を、半導体チップおよび樹脂封止体を仮想線で示し金属細線を除いた平面図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same members as those in the conventional semiconductor device described above with reference to FIG.
(Embodiment 1)
FIG. 1A is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment of the present invention, and FIG. 1B shows the semiconductor device with a semiconductor chip and a resin encapsulated body indicated by phantom lines. FIG.

この半導体装置は、ＱＦＰ型の樹脂封止型半導体装置であって、半導体チップ１と、半導体チップ１を中央部に搭載した放熱板２と、放熱板２の外周部に一端部が取付けられた複数のリード３と、半導体チップ１と各リード３の一端部とを電気的に接続した金属細線４と、半導体チップ１と放熱板２と金属細線４とリード３の一端部とを封止した樹脂封止体５とを有している。樹脂封止体５はパッケージ外形をなすもので、平面視して放熱板２とほぼ相似形をなす四辺形の平板状である。リード３は、樹脂封止体５内にある内部リード部３ａと樹脂封止体５外に露出している外部リード部３ｂとよりなり、外部リード部３ｂはガルウイング形状に屈曲加工されている。６は半導体チップ１と放熱板２とを固着した接着剤、７は放熱板２とリード３との間に介装した絶縁テープである。   This semiconductor device is a QFP-type resin-encapsulated semiconductor device, in which a semiconductor chip 1, a heat sink 2 having the semiconductor chip 1 mounted in the center, and one end portion attached to the outer periphery of the heat sink 2. A plurality of leads 3, a thin metal wire 4 electrically connecting the semiconductor chip 1 and one end of each lead 3, a semiconductor chip 1, a heat sink 2, a thin metal wire 4, and one end of the lead 3 are sealed. And a resin sealing body 5. The resin sealing body 5 has an outer shape of the package, and has a quadrangular flat plate shape that is substantially similar to the heat sink 2 in plan view. The lead 3 includes an internal lead portion 3a in the resin sealing body 5 and an external lead portion 3b exposed to the outside of the resin sealing body 5, and the external lead portion 3b is bent into a gull wing shape. Reference numeral 6 denotes an adhesive for fixing the semiconductor chip 1 and the heat sink 2, and 7 is an insulating tape interposed between the heat sink 2 and the leads 3.

この半導体装置の大きな特徴は、放熱板２に、チップ搭載領域１１の外周側に第１の段差部１２が形成され、リード取付け領域１３の内周側に第２の段差部１４が形成されていて、チップ搭載領域１１とリード取付け領域１３との間に、チップ搭載領域１１を囲む凸状の段差領域１５が形成されている点である。また樹脂封止体５は、放熱板２の段差領域１５の表裏における樹脂厚が均等になるように、かつチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚が均等になるように形成されている点である。   The major feature of this semiconductor device is that the heat sink 2 has a first step portion 12 formed on the outer peripheral side of the chip mounting region 11 and a second step portion 14 formed on the inner peripheral side of the lead mounting region 13. Thus, a convex stepped region 15 surrounding the chip mounting region 11 is formed between the chip mounting region 11 and the lead mounting region 13. Further, the resin sealing body 5 has a resin thickness on the semiconductor chip 1 mounted on the chip mounting area 11 and below the chip mounting area 11 so that the resin thicknesses on the front and back sides of the step area 15 of the heat sink 2 are uniform. The thickness of the resin is uniform.

つまり、第２の段差部１４の段差を適切に決めることで、リード取付け領域１３上からその上面に沿って真っ直ぐに延びるリード３の突き出し位置を樹脂厚み方向における中央に配置しながら、段差領域１５をリード３の突き出し位置と同等の高さに配置し、段差領域１５の表裏における樹脂厚を均等にしている。また第１の段差部１２の段差を適切に決めることで、段差領域１５よりも低位にあるチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚も均等にしている。   That is, by appropriately determining the level difference of the second level difference portion 14, the level difference region 15 is provided while the protruding position of the lead 3 extending straight from the lead mounting area 13 along the upper surface thereof is arranged at the center in the resin thickness direction. Are arranged at the same height as the protruding position of the lead 3, and the resin thickness on the front and back of the step region 15 is made uniform. Further, by appropriately determining the step of the first step portion 12, the resin thickness on the semiconductor chip 1 mounted in the chip mounting region 11 lower than the step region 15 and the resin thickness under the chip mounting region 11 are also obtained. Evenly.

このように放熱板２のほぼ全域にわたって、半導体チップ１あるいは放熱板２の上側の樹脂厚と放熱板２の下側の樹脂厚とを均等にしたため、樹脂の硬化時の収縮および熱膨張収縮による樹脂封止体５の反りを防止することができ、この樹脂封止体５から突き出た複数本の外部リード６の下面の平坦性が向上する。よって、半導体装置の実装時のはんだ付け性が安定し、実装信頼性が向上する。   As described above, since the resin thickness on the upper side of the semiconductor chip 1 or the heat sink 2 and the resin thickness on the lower side of the heat sink 2 are made uniform over almost the entire area of the heat sink 2, the resin is contracted at the time of curing and thermal expansion and contraction. The warpage of the resin sealing body 5 can be prevented, and the flatness of the lower surfaces of the plurality of external leads 6 protruding from the resin sealing body 5 is improved. Therefore, the solderability during mounting of the semiconductor device is stabilized, and the mounting reliability is improved.

樹脂厚み方向における段差領域１５の位置をその表裏における樹脂厚が均等になる位置に設定し、半導体チップ１の厚み等に応じて第１の段差部１２の段差（チップ搭載領域１１の位置）を適宜に決めればよいので、半導体チップ１と内部リード部３ａとを接続する金属細線４の高さの制限が軽減され、金属細線４の形状の自由度が増し、形状の安定化を図ることもできる。
（実施の形態２）
図２（ａ）は本発明の実施の形態２における半導体装置の構成を示す断面図であり、図２（ｂ）は同半導体装置を、半導体チップおよび樹脂封止体を仮想線で示し金属細線を除いた平面図である。 The position of the step region 15 in the resin thickness direction is set to a position where the resin thickness on the front and back sides is equal, and the step of the first step portion 12 (the position of the chip mounting region 11) is set according to the thickness of the semiconductor chip 1 and the like. Since it may be determined as appropriate, the restriction on the height of the fine metal wire 4 connecting the semiconductor chip 1 and the internal lead portion 3a is reduced, the degree of freedom of the shape of the fine metal wire 4 is increased, and the shape can be stabilized. it can.
(Embodiment 2)
FIG. 2A is a cross-sectional view showing the configuration of the semiconductor device according to the second embodiment of the present invention, and FIG. 2B shows the semiconductor device with a semiconductor chip and a resin encapsulated body indicated by phantom lines and a thin metal wire FIG.

この半導体装置が実施の形態１の半導体装置と相違するのは、放熱板２に、チップ搭載領域１１の外周側に第１の段差部１２が形成されて、チップ搭載領域１１の周囲に上方（図中で）に突出した段差領域１５が形成されるとともに、複数のリード３の各々に、放熱板２への取付け部分の外周側に第２の段差部１６が形成されて、放熱板２への取付け部分が他よりも高位にある段差領域１７とされている点である。また樹脂封止体５は、放熱板２の段差領域１５の表裏における樹脂厚が均等になるように、かつチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚が均等になるように形成されている。   This semiconductor device is different from the semiconductor device of the first embodiment in that a first step portion 12 is formed on the heat sink 2 on the outer peripheral side of the chip mounting region 11 and above the periphery of the chip mounting region 11 ( In the drawing, a stepped region 15 projecting is formed, and a second stepped portion 16 is formed on each of the plurality of leads 3 on the outer peripheral side of the mounting portion to the heat sink 2, to the heat sink 2. The mounting portion is a step region 17 in a higher position than the others. Further, the resin sealing body 5 has a resin thickness on the semiconductor chip 1 mounted on the chip mounting area 11 and below the chip mounting area 11 so that the resin thicknesses on the front and back sides of the step area 15 of the heat sink 2 are uniform. The resin thickness is uniform.

つまり、第２の段差部１４の段差を適切に決めることで、リード３の突き出し位置を樹脂厚み方向における中央に配置しながら、段差領域１７の下面に沿う方向に真っ直ぐに延びる段差領域１５の表裏における樹脂厚を均等にしている。また第１の段差部１２の段差を適切に決めることで、段差領域１５よりも低位にあるチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚も均等にしている。   That is, by appropriately determining the step of the second step portion 14, the front and back of the step region 15 extending straight in the direction along the lower surface of the step region 17 while arranging the protruding position of the lead 3 in the center in the resin thickness direction. The resin thickness is made uniform. Further, by appropriately determining the step of the first step portion 12, the resin thickness on the semiconductor chip 1 mounted in the chip mounting region 11 lower than the step region 15 and the resin thickness under the chip mounting region 11 are also obtained. Evenly.

この半導体装置でも、放熱板２のほぼ全域にわたって、半導体チップ１あるいは放熱板２の上側の樹脂厚と放熱板２の下側の樹脂厚とを均等にしたため、樹脂の硬化時の収縮による樹脂封止体５の反りを防止することができ、この樹脂封止体５から突き出た複数本の外部リード６の下面の平坦性が向上する。よって、半導体装置の実装時のはんだ付け性が安定し、実装信頼性が向上する。   Also in this semiconductor device, since the resin thickness on the upper side of the semiconductor chip 1 or the heat sink 2 and the resin thickness on the lower side of the heat sink 2 are made uniform over almost the entire area of the heat sink 2, the resin sealing due to shrinkage at the time of curing of the resin is achieved. The warping of the stationary body 5 can be prevented, and the flatness of the lower surfaces of the plurality of external leads 6 protruding from the resin sealing body 5 is improved. Therefore, the solderability during mounting of the semiconductor device is stabilized, and the mounting reliability is improved.

樹脂厚み方向における段差領域１５の位置をその表裏における樹脂厚が均等になる位置に設定し、半導体チップ１の厚み等に応じて第１の段差部１２の段差（チップ搭載領域１１の位置）を適宜に決めればよいので、半導体チップ１と内部リード部３ａとを接続する金属細線４の高さの制限が軽減され、金属細線４の形状の自由度が増し、形状の安定化を図ることもできる。   The position of the step region 15 in the resin thickness direction is set to a position where the resin thickness on the front and back sides is equal, and the step of the first step portion 12 (the position of the chip mounting region 11) is set according to the thickness of the semiconductor chip 1 and the like. Since it may be determined as appropriate, the restriction on the height of the fine metal wire 4 connecting the semiconductor chip 1 and the internal lead portion 3a is reduced, the degree of freedom of the shape of the fine metal wire 4 is increased, and the shape can be stabilized. it can.

図３は本発明の実施の形態３における半導体装置の構成を示す断面図である。
この半導体装置では、放熱板２に、チップ搭載領域１１の外周側に第１の段差部１２が形成され、リード取付け領域１３の内周側に第２の段差部１４が形成されていて、チップ搭載領域１１とリード取付け領域１３との間に、チップ搭載領域１１を囲む凸状の段差領域１５が形成されている。また複数のリード３の各々に、放熱板２への取付け部分の外周側に第３の段差部１６が形成されていて、放熱板２への取付け部分が他よりも高位にある段差領域１７とされている。樹脂封止体５は、放熱板２の段差領域１５の表裏における樹脂厚が均等になるように、またチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚が均等になるように形成されている。 FIG. 3 is a sectional view showing the configuration of the semiconductor device according to the third embodiment of the present invention.
In this semiconductor device, a first step portion 12 is formed on the outer peripheral side of the chip mounting region 11 and a second step portion 14 is formed on the inner peripheral side of the lead mounting region 13 in the heat sink 2. A convex step region 15 surrounding the chip mounting region 11 is formed between the mounting region 11 and the lead attachment region 13. Each of the plurality of leads 3 is formed with a third step portion 16 on the outer peripheral side of the portion attached to the heat sink 2, and the step region 17 where the portion attached to the heat sink 2 is higher than the others. Has been. The resin sealing body 5 has a resin thickness on the semiconductor chip 1 mounted on the chip mounting area 11 and the area below the chip mounting area 11 so that the resin thickness on the front and back of the step area 15 of the heat sink 2 is uniform. It is formed so that the resin thickness is uniform.

つまり、第３の段差部１６と第２の段差部１４の各段差を適切に決めることで、リード３の突き出し位置を樹脂厚み方向における中央に配置しながら、段差領域１７の下面に沿う方向に真っ直ぐに延びる段差領域１５の表裏における樹脂厚を均等にしている。また第１の段差部１２の段差を適切に決めることで、段差領域１５よりも低位にあるチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚も均等にしている。   That is, by appropriately determining the respective steps of the third step portion 16 and the second step portion 14, the projecting position of the lead 3 is arranged at the center in the resin thickness direction, and in the direction along the lower surface of the step region 17. The resin thickness on the front and back of the step region 15 extending straight is made uniform. Further, by appropriately determining the step of the first step portion 12, the resin thickness on the semiconductor chip 1 mounted in the chip mounting region 11 lower than the step region 15 and the resin thickness under the chip mounting region 11 are also obtained. Evenly.

この半導体装置でも、放熱板２のほぼ全域にわたって、半導体チップ１あるいは放熱板２の上側の樹脂厚と放熱板２の下側の樹脂厚とを均等にしたため、樹脂の硬化時の収縮による樹脂封止体５の反りを防止することができ、樹脂封止体５から突き出た複数本の外部リード６の下面の平坦性が向上する。よって、半導体装置の実装時のはんだ付け性が安定し、実装信頼性が向上する。また半導体チップ１と内部リード部３ａとを接続する金属細線４の高さの制限が軽減され、金属細線４の形状の自由度が増し、形状の安定化を図ることもできる。   Also in this semiconductor device, since the resin thickness on the upper side of the semiconductor chip 1 or the heat sink 2 and the resin thickness on the lower side of the heat sink 2 are made uniform over almost the entire area of the heat sink 2, the resin sealing due to shrinkage at the time of curing of the resin is achieved. Warpage of the stationary body 5 can be prevented, and the flatness of the lower surfaces of the plurality of external leads 6 protruding from the resin sealing body 5 is improved. Therefore, the solderability during mounting of the semiconductor device is stabilized, and the mounting reliability is improved. Further, the restriction on the height of the thin metal wire 4 connecting the semiconductor chip 1 and the internal lead portion 3a is reduced, the degree of freedom of the shape of the fine metal wire 4 is increased, and the shape can be stabilized.

図４は本発明の実施の形態４における半導体装置の構成を示す断面図である。
この半導体装置では、放熱板２に、リード取付け領域１３の内周側に第１の段差部１４が形成されていて、リード取付け領域１３よりも高い段差領域１５が形成されている。また複数のリード３の各々に、放熱板２への取付け部分の外周側に第２の段差部１６が形成されていて、放熱板２への取付け部分が他よりも高位にある段差領域１７とされている。樹脂封止体５は、放熱板２の段差領域１５の表裏における樹脂厚がほぼ均等になるように形成されている。 FIG. 4 is a cross-sectional view showing the configuration of the semiconductor device according to the fourth embodiment of the present invention.
In this semiconductor device, a first step portion 14 is formed on the heat sink 2 on the inner peripheral side of the lead attachment region 13, and a step region 15 higher than the lead attachment region 13 is formed. Each of the plurality of leads 3 has a second step portion 16 formed on the outer peripheral side of the portion attached to the heat sink 2, and a step region 17 in which the portion attached to the heat sink 2 is higher than the others. Has been. The resin sealing body 5 is formed so that the resin thickness on the front and back of the step region 15 of the heat sink 2 is substantially uniform.

つまり、第２の段差部１６と第１の段差部１４の各段差を適切に決めることで、リード３の突き出し位置を樹脂厚み方向における中央に配置しながら、段差領域１７の下面に沿う方向に真っ直ぐに延びる段差領域１５の表裏における樹脂厚をほぼ均等にするとともに、段差領域１５に含まれるチップ搭載領域１１に搭載された半導体チップ１上の樹脂厚と前記チップ搭載領域１１下の樹脂厚との比率を１に近づけている。   That is, by appropriately determining the respective steps of the second step portion 16 and the first step portion 14, the lead 3 protruding position is arranged at the center in the resin thickness direction, and in the direction along the lower surface of the step region 17. The resin thickness on the front and back of the step region 15 that extends straight is made substantially uniform, and the resin thickness on the semiconductor chip 1 mounted on the chip mounting region 11 included in the step region 15 and the resin thickness below the chip mounting region 11 are Is close to 1.

この半導体装置でも、放熱板２のほぼ全域にわたって、半導体チップ１あるいは放熱板２の上側の樹脂厚と放熱板２の下側の樹脂厚とを可能な限り均等になるように調整しているので、樹脂の硬化時の収縮による樹脂封止体５の反りを防止することができ、樹脂封止体５から突き出た複数本の外部リード６の下面の平坦性が向上する。よって、半導体装置の実装時のはんだ付け性が安定し、実装信頼性が向上する。   Also in this semiconductor device, the resin thickness on the upper side of the semiconductor chip 1 or the heat sink 2 and the resin thickness on the lower side of the heat sink 2 are adjusted to be as uniform as possible over almost the entire area of the heat sink 2. Further, it is possible to prevent warping of the resin sealing body 5 due to shrinkage during curing of the resin, and the flatness of the lower surfaces of the plurality of external leads 6 protruding from the resin sealing body 5 is improved. Therefore, the solderability during mounting of the semiconductor device is stabilized, and the mounting reliability is improved.

上述の実施の形態１の半導体装置の製造方法を説明する。
まず、図５に示す放熱板付きリードフレームを準備する。
放熱板２は、上述したように、中央部に素子搭載領域１１を有し、外周部にリード取付け領域１３を有していて、素子搭載領域１１とリード取付け領域１３との間に素子搭載領域１１を囲む凸状の段差領域１５がある。 A method for manufacturing the semiconductor device of the first embodiment will be described.
First, a lead frame with a heat sink shown in FIG. 5 is prepared.
As described above, the heat radiating plate 2 has the element mounting area 11 in the center portion and the lead mounting area 13 in the outer peripheral portion, and the element mounting area between the element mounting area 11 and the lead mounting area 13. There is a convex stepped region 15 surrounding 11.

複数のリード３は、上述したように、内部リード部３ａにおいて放熱板２の外周部に絶縁テープ７等により固着されている。これら複数のリード３は、放熱板２の外形に沿う方向に所定の間隔で配列されていて、外部リード部３ｂの端部でフレーム枠１８に保持されており、内部リード部３ａと外部リード部３ｂとの境界部分に封止樹脂漏れを防止する四角枠状のタイバー１９が形成されている。   As described above, the plurality of leads 3 are fixed to the outer peripheral portion of the heat sink 2 with the insulating tape 7 or the like in the internal lead portion 3a. The plurality of leads 3 are arranged at a predetermined interval in the direction along the outer shape of the heat sink 2 and are held by the frame 18 at the end of the external lead portion 3b. The internal lead portion 3a and the external lead portion A square frame-shaped tie bar 19 for preventing leakage of the sealing resin is formed at the boundary with 3b.

さらに、これら放熱板２と複数のリード３とタイバー１９とフレーム枠１８とを１単位として、フレーム枠１８と連続した外枠２０にて一体にして、複数単位配列されている（図示せず）。外枠２０は放熱板付きリードフレームの外形をなすもので、ガイド孔２１が設けられている。上述した外部リード部３ａの屈曲加工などの際に放熱板２をフレーム枠１８に支持する等の必要があれば支持リード（図示せず）を形成しておいてもよい。   Further, the heat radiating plate 2, the plurality of leads 3, the tie bar 19, and the frame frame 18 are united by an outer frame 20 continuous with the frame frame 18 as a unit (not shown). . The outer frame 20 forms the outer shape of a lead frame with a heat radiating plate, and is provided with a guide hole 21. If it is necessary to support the heat radiating plate 2 to the frame frame 18 at the time of bending the external lead portion 3a described above, a support lead (not shown) may be formed.

この放熱板付きリードフレームを作製する際には、金属製の薄板からリード３などをエッチング加工あるいはスタンピング加工により形成する。この金属薄板としては、たとえば０．１５ｍｍ程度の厚みで熱伝導が比較的良好で強度の高いＣｕ合金を使用する。熱伝導の良好な素材を使用することによって、後に接着される放熱板２からの熱伝達を良好にすることができる。少なくとも内部リード部３ａにおける金属細線４が接続される領域にＡｇめっきあるいはＰｄめっきを施しておくのが望ましい。   When producing this lead frame with a heat sink, the lead 3 and the like are formed from a thin metal plate by etching or stamping. As this metal thin plate, for example, a Cu alloy having a thickness of about 0.15 mm and a relatively good thermal conductivity and a high strength is used. By using a material having good heat conduction, heat transfer from the heat sink 2 to be bonded later can be made good. It is desirable to perform Ag plating or Pd plating at least in a region where the fine metal wire 4 is connected in the internal lead portion 3a.

次に、内部リード部３ａを絶縁テープ７を介して放熱板２に取付ける。放熱板２の素材としては、たとえば０．１ｍｍ程度の厚みで熱伝導が比較的良好で強度の高いＣｕ合金を使用する。絶縁テープ７は、たとえば０．０２ｍｍ程度の厚みで、熱可塑性接着剤の一層構造でもよいし、より高い絶縁性を確保するために、ポリイミドからなるベースフィルムをその両面から熱硬化性接着剤で挟んだ三層構造でもよい。   Next, the internal lead portion 3 a is attached to the heat sink 2 via the insulating tape 7. As a material of the heat sink 2, for example, a Cu alloy having a thickness of about 0.1 mm, a relatively good thermal conductivity, and a high strength is used. The insulating tape 7 may have a thickness of about 0.02 mm, for example, and may have a single layer structure of a thermoplastic adhesive, or a base film made of polyimide with a thermosetting adhesive from both sides in order to ensure higher insulation. A three-layer structure sandwiched may be used.

次に、放熱板２に、チップ搭載領域１１の外周側およびリード取付け領域１３の内周側に伸ばし加工を施して第１の段差部１２と第２の段差部１４とを形成することで、凸状の段差領域１５を表面側に突出させる。   Next, the heat sink 2 is stretched on the outer peripheral side of the chip mounting region 11 and the inner peripheral side of the lead mounting region 13 to form the first step portion 12 and the second step portion 14, The convex step region 15 is projected to the surface side.

このように作製した放熱板付きリードフレームを用いて上記の半導体装置を製造する。 まず、図６（ａ）に示すように、放熱板２の中央部のチップ搭載領域１１の上にディスペンサなどを用いて接着剤６を塗布する。接着剤６は、たとえば熱硬化性のエポキシ樹脂にＡｇ粉を混合させた銀ペーストを使用する。   The semiconductor device is manufactured using the lead frame with the heat sink manufactured as described above. First, as shown in FIG. 6A, the adhesive 6 is applied onto the chip mounting region 11 at the center of the heat sink 2 using a dispenser or the like. As the adhesive 6, for example, a silver paste in which Ag powder is mixed with a thermosetting epoxy resin is used.

次に、図６（ｂ）に示すように、接着剤６を塗布したチップ搭載領域１１上にコレット（図示せず）などを用いて半導体チップ１を搭載し、接着剤６を硬化させる。半導体チップ１はたとえば０．２〜０．４ｍｍ程度の厚みのシリコン単結晶である。接着剤６の硬化のためにたとえば２００〜２５０℃に加熱する。   Next, as shown in FIG. 6B, the semiconductor chip 1 is mounted on the chip mounting region 11 to which the adhesive 6 has been applied using a collet (not shown) or the like, and the adhesive 6 is cured. The semiconductor chip 1 is a silicon single crystal having a thickness of about 0.2 to 0.4 mm, for example. For example, the adhesive 6 is heated to 200 to 250 ° C. for curing.

図６（ｃ）に示すように、チップ搭載領域１１上に固着された半導体チップ１のボンディングパッドと内部リード部３ａとを金属細線４を用いて電気的に接続する。この際には、ワイヤーボンド装置のヒートステージに放熱板２を吸引固定し、リードフレームのボンディングエリア外側を押さえ治具により固定した状態で、ワイヤーボンディングを実施する。金属細線４はたとえば直径２０〜３０μｍのＡｕワイヤーである。   As shown in FIG. 6C, the bonding pads of the semiconductor chip 1 fixed on the chip mounting area 11 and the internal lead portions 3 a are electrically connected using the thin metal wires 4. At this time, the heat radiating plate 2 is sucked and fixed to the heat stage of the wire bonding apparatus, and wire bonding is performed in a state where the outside of the bonding area of the lead frame is fixed by a holding jig. The thin metal wire 4 is, for example, an Au wire having a diameter of 20 to 30 μm.

図６（ｄ）に示すように、トランスファー装置に搭載された封止金型（図示せず）により、放熱板２、半導体チップ１、内部リード部３ａ、金属細線４を、封止金型をシリンダで型締めしつつ樹脂封止する。封止樹脂にはたとえばエポキシ樹脂を用い、封止金型は１８０℃程度に加熱する。封止樹脂が硬化して樹脂封止体５が形成されたら成形品を封止金型から取り出す。このときに放熱板２が上述のように形成されていることから、放熱板２のほぼ全域にわたって、半導体チップ１あるいは放熱板２の上側の樹脂厚と放熱板２の下側の樹脂厚とが均等になり、樹脂の硬化時の収縮による樹脂封止体５の反りを防止することができる。   As shown in FIG. 6D, the sealing plate (not shown) mounted on the transfer device is used to connect the heat sink 2, the semiconductor chip 1, the internal lead portion 3a, and the fine metal wire 4 to the sealing die. Resin sealing while clamping with a cylinder. For example, an epoxy resin is used as the sealing resin, and the sealing mold is heated to about 180 ° C. When the sealing resin is cured and the resin sealing body 5 is formed, the molded product is taken out from the sealing mold. At this time, since the heat sink 2 is formed as described above, the resin thickness on the upper side of the semiconductor chip 1 or the heat sink 2 and the resin thickness on the lower side of the heat sink 2 are almost all over the heat sink 2. It becomes equal and the curvature of the resin sealing body 5 by the shrinkage | contraction at the time of hardening of resin can be prevented.

次に、タイバー１９（図５参照）を切断し、フレーム枠１８（図５参照）から外部リード部３ｂを切り離した後、図６（ｅ）に示すように、外部リード部３ｂをガルウイング形状に屈曲形成することで、半導体装置の完成品を得る。外部リード部３ｂに先にＰｄめっきを施していない場合は半田めっきなどで外装する。   Next, the tie bar 19 (see FIG. 5) is cut and the external lead portion 3b is cut off from the frame frame 18 (see FIG. 5). Then, as shown in FIG. 6 (e), the external lead portion 3b is formed into a gull wing shape. A finished product of the semiconductor device is obtained by bending. If the external lead portion 3b has not been previously plated with Pd, it is packaged with solder plating or the like.

以上の製造工程は一例であって、これに限定されるものではない。実施の形態２から実施の形態４の半導体装置の製造方法は実施の形態１のものとほぼ同様なので説明を省略する。   The above manufacturing process is an example, and the present invention is not limited to this. The manufacturing method of the semiconductor device according to the second to fourth embodiments is almost the same as that of the first embodiment, and the description thereof is omitted.

実施の形態１の放熱板２に代えて、図７に示したような放熱板２Ａを用いてもよい。この放熱板２Ａは、中央部のチップ搭載領域１１に貫通孔２２を形成した以外は実施の形態１の放熱板２と同様の構造を有している。   Instead of the heat radiating plate 2 of the first embodiment, a heat radiating plate 2A as shown in FIG. 7 may be used. The heat sink 2A has the same structure as the heat sink 2 of the first embodiment except that the through hole 22 is formed in the chip mounting region 11 at the center.

これによれば、貫通孔２２を有することで、放熱板２Ａに伸ばし加工を施して第１の段差部１２、第２の段差部１４を形成する際に放熱板２Ａに作用する応力を分断、緩和して、放熱板２Ａが変形するのを防止し、平坦性を向上させることができる。よって、放熱板２Ａあるいはその上に搭載される半導体チップ１の上側と放熱板２Ａの下側の樹脂厚が安定するとともに、放熱板２Ａに対する半導体チップ１の搭載性や封止樹脂との密着性が安定する。また放熱板２Ａと半導体チップ１との接着面積が少なくなるため、接着剤６の吸湿を低減することができ、半導体装置の実装時の熱による樹脂封止体５のクラックを防止することができ、半導体装置の信頼性が向上する。   According to this, by having the through hole 22, the stress acting on the heat sink 2A when the first step 12 and the second step 14 are formed by stretching the heat sink 2A is divided, By relaxing, it is possible to prevent the heat sink 2A from being deformed and improve the flatness. Therefore, the resin thickness of the upper side of the heat sink 2A or the semiconductor chip 1 mounted thereon and the lower side of the heat sink 2A is stabilized, and the mountability of the semiconductor chip 1 to the heat sink 2A and the adhesion with the sealing resin Is stable. Further, since the bonding area between the heat sink 2A and the semiconductor chip 1 is reduced, moisture absorption of the adhesive 6 can be reduced, and cracking of the resin sealing body 5 due to heat during mounting of the semiconductor device can be prevented. The reliability of the semiconductor device is improved.

実施の形態１の放熱板２に代えて、図８に示したような放熱板２Ｂを用いてもよい。この放熱板２Ｂは、中央部のチップ搭載領域１１の外周側に当該チップ搭載領域１１から放熱板２Ｂの四隅に向かって放射状にスリット２３を形成した以外は実施の形態１の放熱板２と同様の構造を有している。   Instead of the heat radiating plate 2 of the first embodiment, a heat radiating plate 2B as shown in FIG. 8 may be used. This heat radiating plate 2B is the same as the heat radiating plate 2 of the first embodiment except that slits 23 are formed radially from the chip mounting region 11 toward the four corners of the heat radiating plate 2B on the outer peripheral side of the chip mounting region 11 in the center. It has the structure of.

これによれば、スリット２３を有することで、放熱板２Ｂに伸ばし加工を施して第１の段差部１２、第２の段差部１４を形成する際に放熱板２Ｂに作用する応力を分断、緩和して、放熱板２Ｂが変形するのを防止し、平坦性を向上させることができる。よって、放熱板２Ｂあるいはその上に搭載される半導体チップ１の上側と放熱板２Ｂの下側の樹脂厚が安定するとともに、放熱板２Ａに対する半導体チップ１の搭載性や封止樹脂との密着性が安定する。またスリット２３内にも樹脂が充填されることとなり、そのアンカー効果により放熱板と樹脂との剥離を防止することができ、半導体装置の信頼性が向上する。   According to this, by having the slit 23, the stress acting on the heat radiating plate 2B when the first step portion 12 and the second step portion 14 are formed by stretching the heat radiating plate 2B is divided and alleviated. And it can prevent that the heat sink 2B deform | transforms, and can improve flatness. Therefore, the resin thickness of the upper side of the heat sink 2B or the semiconductor chip 1 mounted thereon and the lower side of the heat sink 2B is stabilized, and the mountability of the semiconductor chip 1 to the heat sink 2A and the adhesion with the sealing resin Is stable. In addition, the slit 23 is filled with the resin, and the anchor effect can prevent the heat sink and the resin from being peeled off, thereby improving the reliability of the semiconductor device.

実施の形態１の放熱板２に代えて、図９に示したような放熱板２Ｃを用いてもよい。この放熱板２Ｃは、上述の放熱板２Ａと同様の貫通孔２２を形成し、放熱板２Ｂと同様のスリット２３を形成した以外は、実施の形態１の放熱板２と同様の構造を有している。これによれば放熱板２Ａ、放熱板２Ｂについて説明した効果の双方を得ることができる。   Instead of the heat sink 2 of the first embodiment, a heat sink 2C as shown in FIG. 9 may be used. This heat radiating plate 2C has the same structure as the heat radiating plate 2 of the first embodiment except that a through hole 22 similar to the heat radiating plate 2A is formed and a slit 23 similar to the heat radiating plate 2B is formed. ing. According to this, both of the effects described with respect to the heat sink 2A and the heat sink 2B can be obtained.

実施の形態２から実施の形態４の半導体装置においても、上記の放熱板２Ａ，２Ｂ，２Ｃを用いるのが好ましい。
なお、上記の各実施の形態では、段差部１２，１４，１６を垂直に折れ曲がって隆起するように図示しているが、滑らかに隆起させても構わない。 Also in the semiconductor devices of the second to fourth embodiments, it is preferable to use the heat sinks 2A, 2B, and 2C.
In each of the above-described embodiments, the stepped portions 12, 14, and 16 are illustrated as being bent vertically to be raised, but may be raised smoothly.

本発明にかかる半導体装置は、半導体素子を搭載する放熱板やリードに段差部を設けることにより、樹脂封止部の反りを抑え、樹脂封止部外に引き出される複数のリードの下面の平坦性を向上させたものであり、基板実装時に接触不良が発生するのを防止できるとともに、実装信頼性および放熱性に優れるので、情報通信機器や家電機器などに用いられる半導体装置として有用である。   The semiconductor device according to the present invention is provided with a step portion on a heat sink or lead on which a semiconductor element is mounted, thereby suppressing warping of the resin sealing portion and flatness of the lower surfaces of a plurality of leads drawn out of the resin sealing portion. It is useful as a semiconductor device used for information communication equipment, home appliances and the like because it can prevent the occurrence of contact failure during board mounting and is excellent in mounting reliability and heat dissipation.

本発明の実施の形態１の半導体装置の構成図Configuration diagram of the semiconductor device according to the first embodiment of the present invention. 本発明の実施の形態２の半導体装置の構成図Configuration diagram of a semiconductor device according to a second embodiment of the present invention 本発明の実施の形態３の半導体装置の構成図Configuration diagram of a semiconductor device according to a third embodiment of the present invention 本発明の実施の形態４の半導体装置の構成図Configuration diagram of a semiconductor device according to a fourth embodiment of the present invention. 図１の半導体装置に使用した本発明にかかる放熱板付きリードフレームの構成図1 is a configuration diagram of a lead frame with a heat sink according to the present invention used in the semiconductor device of FIG. 図１の半導体装置の製造方法を示す工程断面図Sectional drawing which shows the manufacturing method of the semiconductor device of FIG. 図５の放熱板付きリードフレームに使用される放熱板の平面図Top view of the heat sink used for the lead frame with heat sink of FIG. 図５の放熱板付きリードフレームに使用される他の放熱板の平面図The top view of the other heat sink used for the lead frame with a heat sink of FIG. 図５の放熱板付きリードフレームに使用されるさらに他の放熱板の平面図The top view of the other heat sink used for the lead frame with a heat sink of FIG. 従来の半導体装置の構成図Configuration diagram of a conventional semiconductor device 従来の半導体装置の構成図Configuration diagram of a conventional semiconductor device

符号の説明Explanation of symbols

１ 半導体チップ
２ 放熱板
３ リード
3a 内部リード部
3b 外部リード部
４ 金属細線
５ 樹脂封止体
９ 絶縁テープ
11 チップ搭載領域
12 段差部
13 リード取付け領域
14 段差部
15 段差領域
16 段差部
17 段差領域
22 貫通孔
23 スリット 1 Semiconductor chip 2 Heat sink 3 Lead
3a Internal lead
3b External lead 4 Metal fine wire 5 Resin encapsulant 9 Insulating tape
11 Chip mounting area
12 steps
13 Lead mounting area
14 steps
15 Step area
16 steps
17 Step area
22 Through hole
23 Slit

Claims (13)

半導体素子と、前記半導体素子を中央部に搭載した放熱板と、前記放熱板の外周部に一端部が取付けられた複数のリードと、前記半導体素子と前記リードの一端部とを電気的に接続した金属細線と、前記半導体素子と放熱板と金属細線とリードの一端部とを封止した樹脂封止部とを有した半導体装置であって、
前記樹脂封止部により封止された各リードの内部リード部における外端部と前記放熱板への取付け部との間と、前記放熱板におけるリード取付け領域の内周側と、前記放熱板における素子搭載領域の外周側との内、少なくとも２箇所に段差部が形成されていて、前記放熱板における少なくとも素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されていることを特徴とする半導体装置。 Electrically connecting a semiconductor element, a heat sink having the semiconductor element mounted in the center thereof, a plurality of leads having one end attached to the outer periphery of the heat sink, and the semiconductor element and one end of the lead A semiconductor device having a thin metal wire, and a resin sealing portion that seals the semiconductor element, the heat sink, the thin metal wire, and one end of the lead,
Between the outer end portion of the inner lead portion of each lead sealed by the resin sealing portion and the mounting portion to the heat sink, the inner peripheral side of the lead mounting region of the heat sink, and the heat sink Step portions are formed in at least two locations on the outer peripheral side of the element mounting area, and at least the area between the element mounting area and the lead mounting area in the heat sink is the center in the thickness direction of the resin sealing section A semiconductor device, wherein the semiconductor device is disposed in a portion. 各内部リード部は直線状に延び、放熱板における素子搭載領域の外周側に第１の段差部が形成され、リード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されていることを特徴とする請求項１記載の半導体装置。   Each internal lead portion extends in a straight line, a first step portion is formed on the outer peripheral side of the element mounting region in the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region. An area between the element mounting area and the lead mounting area of the plate is disposed in the central portion in the thickness direction of the resin sealing portion, and the element mounting area is more than the central portion in the thickness direction of the resin sealing portion. 2. The semiconductor device according to claim 1, wherein the semiconductor device is disposed at a low level. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域の外周側の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されていることを特徴とする請求項１記載の半導体装置。   A first step portion is formed between the outer end portion of each internal lead portion and the attachment portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region in the heat sink, The region on the outer peripheral side of the element mounting region of the heat sink is disposed at the central portion in the thickness direction of the resin sealing portion, and the element mounting region is lower than the central portion in the thickness direction of the resin sealing portion. The semiconductor device according to claim 1, wherein the semiconductor device is arranged. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成され、リード取付け領域の内周側に第３の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記樹脂封止部の厚み方向における中央部に配置されており、前記素子搭載領域は前記樹脂封止部の厚み方向における中央部よりも低位に配置されていることを特徴とする請求項１記載の半導体装置。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region of the heat sink. A third step portion is formed on the inner peripheral side of the region, and a region between the element mounting region and the lead mounting region of the heat sink is disposed at the central portion in the thickness direction of the resin sealing portion. 2. The semiconductor device according to claim 1, wherein the element mounting region is disposed lower than a central portion in a thickness direction of the resin sealing portion. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板におけるリード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板のリード取付け領域の内側の領域が前記樹脂封止部の厚み方向における中央部に配置されていることを特徴とする請求項１記載の半導体装置。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region of the heat sink. 2. The semiconductor device according to claim 1, wherein a region inside a lead mounting region of the heat radiating plate is disposed at a central portion in a thickness direction of the resin sealing portion. 放熱板は、その素子搭載領域に開口した貫通孔と、前記素子搭載領域の外周側に当該素子搭載領域から外周方向に延びたスリットとの内、少なくとも一方を有することを特徴とする請求項１〜請求項５のいずれかに記載の半導体装置。   The heat sink has at least one of a through-hole opened in the element mounting area and a slit extending in the outer peripheral direction from the element mounting area on the outer peripheral side of the element mounting area. The semiconductor device according to claim 5. 半導体素子を中央部に搭載するための放熱板と、前記放熱板の外周部に一端部が取付けられた複数のリードと、前記複数のリードを所定の間隔で保持したフレーム枠とを有し、
樹脂封止される各リードの内部リード部における外端部と前記放熱板への取付け部との間と、前記放熱板におけるリード取付け領域の内周側と、前記放熱板における素子搭載領域の外周側との内、少なくとも２箇所に段差部が形成されていて、
前記放熱板における少なくとも素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されている放熱板付きリードフレーム。 A heat sink for mounting the semiconductor element at the center, a plurality of leads having one end attached to the outer periphery of the heat sink, and a frame frame holding the plurality of leads at a predetermined interval;
Between the outer end portion of the internal lead portion of each lead sealed with resin and the mounting portion to the heat sink, the inner peripheral side of the lead mounting region of the heat sink, and the outer periphery of the element mounting region of the heat sink Steps are formed in at least two places on the side,
A lead frame with a heat radiating plate, wherein at least a region between the element mounting region and the lead mounting region of the heat radiating plate is disposed at a predetermined height with respect to an outer end portion of the internal lead portion. 各内部リード部は直線状に延びており、放熱板における素子搭載領域の外周側に第１の段差部が形成され、リード取付け領域の内周側に第２の段差部が形成されていて、前記素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている請求項７記載の放熱板付きリードフレーム。   Each internal lead portion extends linearly, a first step portion is formed on the outer peripheral side of the element mounting region in the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region, A region between the element mounting region and the lead mounting region is disposed at a predetermined height with respect to the outer end portion of the internal lead portion, and the element mounting region is lower than the outer end portion of the internal lead portion. The lead frame with a heat sink according to claim 7, wherein the lead frame is disposed. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成されていて、前記放熱板の素子搭載領域の外周側の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている請求項７記載の放熱板付きリードフレーム。   A first step portion is formed between the outer end portion of each internal lead portion and the attachment portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region in the heat sink, A region on the outer peripheral side of the element mounting region of the heat sink is disposed at a predetermined height with respect to the outer end portion of the internal lead portion, and the element mounting region is disposed lower than the outer end portion of the internal lead portion. The lead frame with a heat sink according to claim 7. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板における素子搭載領域の外周側に第２の段差部が形成され、リード取付け領域の内周側に第３の段差部が形成されていて、前記放熱板の素子搭載領域とリード取付け領域との間の領域が前記内部リード部の外端部に対する所定の高さに配置されており、前記素子搭載領域は前記内部リード部の外端部よりも低位に配置されている請求項７記載の放熱板付きリードフレーム。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the outer peripheral side of the element mounting region of the heat sink. A third step portion is formed on the inner peripheral side of the region, and a region between the element mounting region and the lead mounting region of the heat sink is disposed at a predetermined height with respect to the outer end portion of the inner lead portion. The lead frame with a heat sink according to claim 7, wherein the element mounting region is disposed lower than an outer end portion of the internal lead portion. 各内部リード部における外端部と放熱板への取付け部との間に第１の段差部が形成され、前記放熱板におけるリード取付け領域の内周側に第２の段差部が形成されていて、前記放熱板の第２の段差部よりも内側の領域が前記内部リード部の外端部に対する所定の高さに配置されている請求項７記載の放熱板付きリードフレーム。   A first step portion is formed between an outer end portion of each internal lead portion and a mounting portion to the heat sink, and a second step portion is formed on the inner peripheral side of the lead mounting region of the heat sink. The lead frame with a heat sink according to claim 7, wherein a region inside the second step portion of the heat sink is disposed at a predetermined height with respect to an outer end portion of the internal lead portion. 放熱板は、その素子搭載領域に開口した貫通孔と、前記素子搭載領域の外周側に当該素子搭載領域から外周方向に延びたスリットとの内、少なくとも一方を有することを特徴とする請求項７〜請求項１１のいずれかに記載の放熱板付きリードフレーム。   8. The heat sink has at least one of a through-hole opened in the element mounting area and a slit extending in the outer peripheral direction from the element mounting area on the outer peripheral side of the element mounting area. The lead frame with a heat sink according to any one of claims 11 to 11. 請求項７に記載された放熱板付きリードフレームを用い、放熱板の中央部に半導体素子を搭載する工程と、
前記放熱板上の半導体素子と前記放熱板の外周部に取付けられている各リードの一端部とを金属細線により電気的に接続する工程と、
前記半導体素子と放熱板と金属細線と各リードの内部リード部とを封止金型を用いて樹脂封止する工程とを有することを特徴とする半導体装置の製造方法。 A step of mounting a semiconductor element on the center of the heat sink using the lead frame with a heat sink described in claim 7;
Electrically connecting the semiconductor element on the heat sink and one end of each lead attached to the outer periphery of the heat sink by a thin metal wire;
A method of manufacturing a semiconductor device, comprising: sealing the semiconductor element, the heat sink, the fine metal wires, and the internal lead portions of each lead with a sealing die.
JP2006330057A 2006-12-07 2006-12-07 Semiconductor device and manufacturing method therefor, and lead frame with radiation board Withdrawn JP2008147267A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039368A (en) * 2016-02-02 2017-08-11 精工半导体有限公司 Resin molded semiconductor device
CN114046212A (en) * 2021-11-30 2022-02-15 西安航天动力研究所 Composite heat insulation structure with thermal deformation compensation function

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039368A (en) * 2016-02-02 2017-08-11 精工半导体有限公司 Resin molded semiconductor device
CN107039368B (en) * 2016-02-02 2022-04-26 艾普凌科有限公司 Resin-sealed semiconductor device
CN114046212A (en) * 2021-11-30 2022-02-15 西安航天动力研究所 Composite heat insulation structure with thermal deformation compensation function
CN114046212B (en) * 2021-11-30 2023-06-27 西安航天动力研究所 Composite heat insulation structure with thermal deformation compensation function

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