JPH06507047A - 一次流化学蒸着法とその装置 - Google Patents
一次流化学蒸着法とその装置Info
- Publication number
- JPH06507047A JPH06507047A JP4510862A JP51086292A JPH06507047A JP H06507047 A JPH06507047 A JP H06507047A JP 4510862 A JP4510862 A JP 4510862A JP 51086292 A JP51086292 A JP 51086292A JP H06507047 A JPH06507047 A JP H06507047A
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- JP
- Japan
- Prior art keywords
- reaction
- vapor deposition
- chemical vapor
- gas
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (20)
- 1.ホットウォール反応管手段と、反応気体予熱器手段と、反応気体排気口と、 さらに、予熱器から排気口までほぼ層流をなすように反応気体を通過させるため に、ほとんど渦流のない反応気体の流動にするように制御する気流制御手段をも 有している化学蒸着装置であって、前記ホットウォール反応管手段には、コーテ ィング対象の平行な基板のスタックが予め装入されているウェーハポートを収納 するためのウェーハポート区画があり、また前記ウェーハ面は、反応管の中央軸 にほぼ垂直であり、さらに上記ウェーハポート区画は上流端と下流端を有してい る化学蒸着装置。
- 2.前記気流制御手段には、ウェーハポート区画との関係においてほとんど渦流 を生じさせない位置に配されている上流管ベースがあり、さらに前記反応気体予 熱器には、個別に少なくとも1種類の反応気体を予め加熱し、かつウェーハポー ト区画の上流端のすぐ近くにある混合区画にこの反応気体を導入するための手段 が含まれている請求項1記載の化学蒸着装置。
- 3.気体混合物を予め加熱し、かつこの混合物をウェーハポート区画の下流端近 くに導入させる二次反応気体予熱器を備えている請求項2記載の化学蒸着装置。
- 4.前記反応気体予熱器には、個別に少なくとも2種類の反応気体を予め加熱し 、かつウェーハボート区画の上流端のすぐ近くにある混合区画にこの反応気体を 導入するための手段が含まれていることを特徴とする請求項2記載の化学蒸着装 置。
- 5.前記気流制御手段には、ウェーハボートの下流端との関係において渦流をほ とんど生じさせないような位置に、下流管フランジを設ける請求項1記載の化学 蒸着装置。
- 6.ホットウォール反応管手段は、真空チャンバを画する外側管内に収納されて おり、しかもこの反応管と外側管の間にはスペースがあって、このスペースには 、ウェーハボート区画の下流端と連絡する流入口があり、また排気口もある請求 項1記載の化学蒸着装置。
- 7.前記反応気体予熱器には、ウェーハポートの下流端との関係において渦流を ほとんど生じさせない位置に、下流管フランジが備えられており、このフランジ は、気体をほぼ層流状態に保っている間、反応気体の流れを排気口に向けるため に、ウェーハポートの下流端から外側管まで延びている湾曲面手段を有する請求 項6記載の化学蒸着装置。
- 8.ホットウォール反応管手段は、真空チャンバを画する外側管内に収納されて おり、しかもこの反応管と外側管の間にはスペースがあって、このスペースには 、流入気体の通路があり、またウェーハポート区画の上流端と連絡する流入口が あり、さらに反応気体入口も含み、その上、前記記流入気体通路には、反応気体 予熱器がある請求項1記載の化学蒸着装置。
- 9.前記反応気体予熱器には、ウェーハボートの上流端との関係において渦流を ほとんど生じさせないような位置に、上流管フランジが備えられており、しかも このフランジは、気体をほぼ層流状態に保っている間、反応気体の流れを流入気 体供給流路から出るようにするために、ウェーハポートの上流端から外側管まで 延びている湾曲面手段を有する請求項8記載の化学蒸着装置。
- 10.反応気体予熱器手段には、着脱可能なバッフルを備えた加熱管が具備され ており、しかも、このバッフルは、この表面を通過する反応気体に予め定められ た一定量の熱を伝達するよう選択されている表面積を有している請求項1記載の 化学蒸着装置。
- 11.反応気体予熱器手段には、内側面に異形部がある着脱可能な双壁円筒形加 熱器が備えられており、しかもこの内側面異形部は、この上を通り過ぎる反応気 体に予め定められた一定量の熱を伝達するよう選択されている表面積を有してい る請求項1記載の化学蒸着装置。
- 12.反応気体予熱器手段にはまた、着脱可能なバッフルを備えた加熱管が具備 されており、しかも、このバッフルは、この表面を通過する反応気体に予め定め られた−定量の熱を伝達するよう選択されている表面積を有している請求項11 記載の化学蒸着装置。
- 13.前記の双壁円筒形加熱器と加熱管はそれぞれ、多数の気体インゼクタ射出 口を有している請求項12記載の化学蒸着装置。
- 14.円筒形加熱器の射出口と加熱管の射出口はそれぞれ、これらから射出され る気体が直ちに混合されるように配置されている交差中央軸を持っている請求項 13記載の化学蒸着装置。
- 15.a)先ず複数の反応気体をそれぞれ分離加熱チャンバ内で予熱し、 b)次にコーティング対象のウェーハを収めた反応区画のすぐ上流において、上 記の予熱された複数反応気体を混合し、 c)その後直ちに、反応気体は有意な渦流や渦流が生じないようほぼ層流に保た れる層流で、上記の混合された反応気体を反応区画内のウェーハ上に通し、d) そして反応気体が反応域を通過すると直ちに、この反応気体を反応区画から除去 する、 という各段階からなる化学蒸着工程。
- 16.予め加熱された反応気体が、コーティング対象のウェーハを収めた反応区 画の下流端に導入される請求項15記載の化学蒸着工程。
- 17.請求項1の装置によって実行される請求項15記載の化学蒸着工程。
- 18.a)先ずコーティング対象のウェーハを収めた反応区画のすぐ上流におい て反応気体を加熱し、c)その後直ちに、反応気体は有意な渦流や渦流が生じな いようほぼ層流に保たれる層流で、前記加熱された反応気体を反応区画内のウェ ーハ上に通し、d)前記反応気体が反応区画を通り過ぎると直ちに、この反応気 体を反応区画から除去する、という各段階からなりたっている請求項15記載の 化学蒸着工程。
- 19.予め加熱された反応気体が、コーティング対象のウェーハを収りた反応区 画の下流端に導入される請求項18記載の化学蒸着工程。
- 20.請求項1の装置によって奥行される請求項18記載の化学蒸着工程。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US691,470 | 1991-04-25 | ||
US07/691,470 US5320680A (en) | 1991-04-25 | 1991-04-25 | Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow |
PCT/US1992/002666 WO1992019790A2 (en) | 1991-04-25 | 1992-04-09 | Primary flow cvd apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06507047A true JPH06507047A (ja) | 1994-08-04 |
JP3193716B2 JP3193716B2 (ja) | 2001-07-30 |
Family
ID=24776662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51086292A Expired - Fee Related JP3193716B2 (ja) | 1991-04-25 | 1992-04-09 | 一次流化学蒸着法とその装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5320680A (ja) |
EP (1) | EP0585343B1 (ja) |
JP (1) | JP3193716B2 (ja) |
KR (1) | KR100267520B1 (ja) |
AU (1) | AU1902692A (ja) |
CA (1) | CA2109198C (ja) |
DE (1) | DE69230401T2 (ja) |
WO (1) | WO1992019790A2 (ja) |
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JP2006080506A (ja) * | 2004-08-13 | 2006-03-23 | Semiconductor Energy Lab Co Ltd | 半導体装置の製造方法 |
US9150953B2 (en) | 2004-08-13 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including organic semiconductor |
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-
1991
- 1991-04-25 US US07/691,470 patent/US5320680A/en not_active Expired - Fee Related
-
1992
- 1992-04-09 KR KR1019930703234A patent/KR100267520B1/ko not_active IP Right Cessation
- 1992-04-09 JP JP51086292A patent/JP3193716B2/ja not_active Expired - Fee Related
- 1992-04-09 CA CA002109198A patent/CA2109198C/en not_active Expired - Fee Related
- 1992-04-09 DE DE69230401T patent/DE69230401T2/de not_active Expired - Fee Related
- 1992-04-09 WO PCT/US1992/002666 patent/WO1992019790A2/en active IP Right Grant
- 1992-04-09 EP EP92911855A patent/EP0585343B1/en not_active Expired - Lifetime
- 1992-04-09 AU AU19026/92A patent/AU1902692A/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006080506A (ja) * | 2004-08-13 | 2006-03-23 | Semiconductor Energy Lab Co Ltd | 半導体装置の製造方法 |
US9150953B2 (en) | 2004-08-13 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including organic semiconductor |
Also Published As
Publication number | Publication date |
---|---|
EP0585343B1 (en) | 1999-12-08 |
KR100267520B1 (ko) | 2000-10-16 |
AU1902692A (en) | 1992-12-21 |
DE69230401T2 (de) | 2000-05-11 |
JP3193716B2 (ja) | 2001-07-30 |
WO1992019790A3 (en) | 1993-03-04 |
CA2109198A1 (en) | 1992-10-26 |
US5320680A (en) | 1994-06-14 |
DE69230401D1 (de) | 2000-01-13 |
EP0585343A4 (en) | 1996-01-17 |
CA2109198C (en) | 2000-03-28 |
EP0585343A1 (en) | 1994-03-09 |
WO1992019790A2 (en) | 1992-11-12 |
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