JPH06349870A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH06349870A JPH06349870A JP13705593A JP13705593A JPH06349870A JP H06349870 A JPH06349870 A JP H06349870A JP 13705593 A JP13705593 A JP 13705593A JP 13705593 A JP13705593 A JP 13705593A JP H06349870 A JPH06349870 A JP H06349870A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor pellet
- lead frame
- resin body
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置及びその製造
方法に関し、特に樹脂封止型半導体装置及びその製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and its manufacturing method, and more particularly to a resin-sealed semiconductor device and its manufacturing method.
【0002】[0002]
【従来の技術】従来の樹脂封止型半導体装置の製造方法
は、図2(a)に示すように、中央にアイランド12を
有し、このアイランド12の周囲に配置した内部リード
および外部リードを有するリードフレーム1の吊りピン
(図示せず)でリードフレーム1に支持されているアイ
ランド12の上に半導体ペレット7をマウントし、金属
細線8をボンディングして半導体ペレット7とリードフ
レーム1の内部リードとの間を結線する。2. Description of the Related Art As shown in FIG. 2A, a conventional method for manufacturing a resin-sealed semiconductor device has an island 12 in the center, and an internal lead and an external lead arranged around the island 12. The semiconductor pellet 7 is mounted on the island 12 supported by the lead frame 1 with the hanging pins (not shown) of the lead frame 1 and the metal fine wire 8 is bonded to the semiconductor pellet 7 and the internal leads of the lead frame 1. Connect between and.
【0003】次に、図2(b)に示すように、キャビテ
ィ2およびゲート3を有する封止用の下金型4に半導体
ペレット7をマウントしたリードフレーム1を装着して
キャビティ9を有する上金型5を上に載せ型締めし、ゲ
ート3から熱硬化性樹脂6をキャビティ2,9内に注入
する。Next, as shown in FIG. 2B, a lead frame 1 having a semiconductor pellet 7 mounted thereon is mounted on a lower mold 4 for sealing having a cavity 2 and a gate 3 and a cavity 9 is provided thereon. The mold 5 is placed on top and clamped, and the thermosetting resin 6 is injected from the gate 3 into the cavities 2 and 9.
【0004】次に、図2(c)に示すようにキャビティ
2,9内に充填した樹脂を熱硬化して樹脂体6aにより
封止し、上下金型4,5から離脱させる。Next, as shown in FIG. 2 (c), the resin filled in the cavities 2 and 9 is thermoset and sealed by the resin body 6a, and then separated from the upper and lower molds 4 and 5.
【0005】[0005]
【発明が解決しようとする課題】この従来の半導体装置
では、半導体ペレットを搭載するアイランドが、通常、
吊りピンのみでリードフレームに支持されている為に、
強度的に弱く、マウントやボンディング工程あるいは樹
脂封止中の注入樹脂による応力の影響により、半導体ペ
レットの位置が変動し、半導体ペレットに金属細線が接
触したり、金属細線が変形して金属細線相互間の短絡や
金属細線の切断を生じたり、金属細線やアイランドが樹
脂体(パッケージ)から露出してしまうという問題があ
った。In this conventional semiconductor device, the island on which the semiconductor pellets are mounted is usually
Since it is supported by the lead frame only with the hanging pins,
It is weak in strength, and the position of the semiconductor pellets fluctuates due to the stress of the injection resin during the mounting or bonding process or resin encapsulation. There are problems such as short circuit between them, disconnection of metal thin wires, and metal thin wires and islands exposed from the resin body (package).
【0006】又、樹脂封止中に樹脂は金型のアイランド
の下(下キャビティ)と、半導体ペレットの上(上キャ
ビティ)とに分かれて流れるが、半導体ペレットの位置
が本来の位置から移動すると、上下キャビティ内での樹
脂の流速が変わり上下キャビティ内での樹脂充填差が生
じてしまい、更に半導体ペレット位置の変動が加速され
たり、パッケージ内に気泡を巻込んだりしてしまうとい
う問題があった。Further, during resin encapsulation, the resin flows separately under the mold island (lower cavity) and over the semiconductor pellet (upper cavity), but if the position of the semiconductor pellet moves from its original position. However, there is a problem that the flow velocity of the resin in the upper and lower cavities changes and a resin filling difference occurs in the upper and lower cavities, which further accelerates the fluctuation of the position of the semiconductor pellet and entraps air bubbles in the package. It was
【0007】[0007]
【課題を解決するための手段】本発明の半導体装置は、
中央に素子搭載用の開口部を有し前記開口部の周囲に内
部リードを配置したリードフレームの下面に接着してパ
ッケージの下半分を封止した第1の樹脂体と、前記開口
部の第1の樹脂体の表面に接着してマウントし前記内部
リードとの間を電気的に接続した半導体ペレットと、前
記半導体ペレットを含むパッケージの上半分を封止した
第2の樹脂体とを有する。The semiconductor device of the present invention comprises:
A first resin body that has an opening for mounting an element in the center and that adheres to the lower surface of a lead frame in which internal leads are arranged around the opening to seal the lower half of the package; The first resin body has a semiconductor pellet that is mounted on the surface of the resin body and is electrically connected to the internal leads, and a second resin body that seals the upper half of the package including the semiconductor pellet.
【0008】本発明の半導体装置の製造方法は、中央に
素子搭載用の開口部を有し前記開口部の周囲に内部リー
ドを配置したリードフレームを金型に装着して樹脂を注
入し、前記リードフレームの下面に接着してパッケージ
の下半分を封止した第1の樹脂体を形成する工程と、前
記リードフレームを金型より離脱させた後前記開口部の
第1の樹脂体の表面に半導体ペレットをマウントする工
程と、前記半導体ペレットと前記内部リードとの間を金
属細線で接続する工程と、前記半導体ペレットを含むパ
ッケージの上半分を樹脂封止した第2の樹脂体を形成す
る工程とを含んで構成される。According to the method of manufacturing a semiconductor device of the present invention, a lead frame having an opening for mounting an element in the center and having internal leads arranged around the opening is mounted on a mold and resin is injected, Forming a first resin body that adheres to the lower surface of the lead frame and seals the lower half of the package; and after removing the lead frame from the mold, on the surface of the first resin body in the opening. Mounting the semiconductor pellet, connecting the semiconductor pellet and the internal lead with a fine metal wire, and forming a second resin body in which the upper half of the package including the semiconductor pellet is resin-sealed. It is configured to include and.
【0009】[0009]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【0010】図1(a)〜(e)は本発明の一実施例の
製造方法を説明するための工程順に示した断面図であ
る。1 (a) to 1 (e) are cross-sectional views showing a sequence of steps for explaining a manufacturing method according to an embodiment of the present invention.
【0011】まず、図1(a)に示すように、中央に素
子を搭載するための開口部を有し、この開口部の周囲に
配置した内部リードおよび内部リードの外側に外部リー
ドを有するリードフレーム1を成形用キャビティ2およ
びゲート3を有する封止用の下金型4に位置決めして装
着し、平坦な面を有する封止用の上金型5を上に載せて
型締めした後、ゲート3からエポキシ等の熱硬化性樹脂
6をキャビティ2内に注入し充填する。First, as shown in FIG. 1A, a lead having an opening for mounting an element in the center thereof, and an internal lead arranged around the opening and an external lead outside the internal lead. After positioning and mounting the frame 1 on a lower mold 4 for sealing having a molding cavity 2 and a gate 3 and placing an upper mold 5 for sealing having a flat surface on the mold and clamping the mold, A thermosetting resin 6 such as epoxy is injected into the cavity 2 from the gate 3 and filled.
【0012】次に、図1(b)に示すように、キャビテ
ィ2内に充填した樹脂6を半硬化させて樹脂体6aを形
成し、リードフレーム1と接着した半製品を形成した
後、上金型5および下金型4から離脱させる。Next, as shown in FIG. 1B, the resin 6 filled in the cavity 2 is semi-cured to form a resin body 6a, and a semi-finished product bonded to the lead frame 1 is formed. Separated from the mold 5 and the lower mold 4.
【0013】次に、図1(c)に示すように、リードフ
レーム1の開口部の樹脂体6aの表面に銀ペーストを用
い半導体ペレット7をマウントする。次に、半導体ペレ
ット7の電極パッドとリードフレームの内部リードとの
間を金属細線8でボンディングして接続する。ここで、
リードフレーム1には既に樹脂体6aが存在する為に半
導体ペレット7や内部リードへの熱伝導が悪い事が予想
されるが、その場合は樹脂体6aの厚さを可能な限り薄
くしたり樹脂中に混入するアルミナ等のフィラー成分を
増量して熱伝導率を向上させる他、ボンディング方法を
熱圧着のみではなく、超音波出力を上げる等の手法によ
りボンディングが可能となる。Next, as shown in FIG. 1C, a semiconductor pellet 7 is mounted on the surface of the resin body 6a in the opening of the lead frame 1 using silver paste. Next, the electrode pad of the semiconductor pellet 7 and the inner lead of the lead frame are bonded and connected with a thin metal wire 8. here,
Since the resin body 6a already exists in the lead frame 1, it is expected that the heat conduction to the semiconductor pellet 7 and the internal leads is poor. In that case, the thickness of the resin body 6a should be made as thin as possible or In addition to increasing the amount of filler component such as alumina mixed therein to improve the thermal conductivity, it is possible to perform bonding not only by thermocompression bonding but also by increasing ultrasonic output.
【0014】次に、図1(d)に示すように、下金型4
と同じキャビティを有する下金型4aに半製品を装着し
てキャビティ9およびゲート10を有する上金型5aを
上に載せ型締めし、熱硬化性樹脂11をゲート10から
キャビティ9内に注入する。Next, as shown in FIG. 1D, the lower die 4
The semi-finished product is mounted on the lower mold 4a having the same cavity as above, the upper mold 5a having the cavity 9 and the gate 10 is placed on the upper mold, and the thermosetting resin 11 is injected into the cavity 9 from the gate 10. .
【0015】その際、ピン穴と位置決めピンのクリアラ
ンスや上下金型のずれ等を考慮してキャビティ9のサイ
ズはキャビティ2よりも数10〜100μm程度以上小
さくしておく必要がある。At this time, the size of the cavity 9 must be smaller than the cavity 2 by several tens to 100 μm or more in consideration of the clearance between the pin hole and the positioning pin, the shift of the upper and lower molds, and the like.
【0016】次に、図1(e)に示すように、キャビテ
ィ9内に樹脂11を充填した後、上下金型5a,4aを
加熱して樹脂を硬化させ、樹脂体6a,11aでモール
ド封止された樹脂封止型半導体装置を構成する。Next, as shown in FIG. 1 (e), after filling the cavity 9 with the resin 11, the upper and lower molds 5a and 4a are heated to cure the resin, and the resin is sealed with the resin bodies 6a and 11a. A stopped resin-encapsulated semiconductor device is configured.
【0017】なお、樹脂体6aおよび樹脂体11aはそ
れぞれフィラー量を変えたり、異なる成分の熱硬化性樹
脂を使用しても良い。The resin body 6a and the resin body 11a may have different filler amounts, or thermosetting resins having different components may be used.
【0018】[0018]
【発明の効果】以上説明したように本発明は、リードフ
レームの下面に接着してパッケージの下半分を封止した
樹脂体の表面に半導体ペレットをマウントして半導体ペ
レットとリードフレームの内部リードとの間を電気的に
接続した後、パッケージの上半分を樹脂封止することに
より、半導体ペレットの位置の変動を無くすことがで
き、半導体ペレットの位置変動により生じるボンディン
グ線の接触や断線を防止して信頼性を向上させるという
効果を有する。As described above, according to the present invention, the semiconductor pellet is mounted on the surface of the resin body which is adhered to the lower surface of the lead frame to seal the lower half of the package, and the semiconductor pellet and the inner lead of the lead frame are mounted. After electrically connecting between the two, by sealing the upper half of the package with resin, it is possible to eliminate fluctuations in the position of the semiconductor pellets and prevent contact and disconnection of the bonding wires caused by fluctuations in the position of the semiconductor pellets. Has the effect of improving reliability.
【0019】また、上下キャビティ内に注入する樹脂流
のバランスを考慮する必要がない為、リードフレームに
予め接着しておく樹脂体の厚さを薄くする事が出来るた
め、パッケージの薄型化が実現でき、放熱効果も増大で
きるという効果を有する。Further, since it is not necessary to consider the balance of the resin flow injected into the upper and lower cavities, the thickness of the resin body pre-bonded to the lead frame can be made thin, so that the package can be made thin. Therefore, the heat dissipation effect can be increased.
【図1】本発明の一実施例の製造方法を説明するための
工程順に示した断面図。1A to 1C are cross-sectional views showing a manufacturing process of an embodiment of the present invention in the order of steps.
【図2】従来の半導体装置の製造方法を説明するための
工程順に示した断面図。2A to 2C are cross-sectional views showing the order of steps for explaining a conventional method for manufacturing a semiconductor device.
1 リードフレーム 2,9 キャビティ 3,10 ゲート 4,4a 下金型 5,5a 上金型 6,11 樹脂 6a,11a 樹脂体 8 金属細線 12 アイランド 1 Lead Frame 2,9 Cavity 3,10 Gate 4,4a Lower Mold 5,5a Upper Mold 6,11 Resin 6a, 11a Resin Body 8 Metal Fine Wire 12 Island
Claims (2)
口部の周囲に内部リードを配置したリードフレームの下
面に接着してパッケージの下半分を封止した第1の樹脂
体と、前記開口部の第1の樹脂体の表面に接着してマウ
ントし前記内部リードとの間を電気的に接続した半導体
ペレットと、前記半導体ペレットを含むパッケージの上
半分を封止した第2の樹脂体とを有することを特徴とす
る半導体装置。1. A first resin body which has an opening for mounting an element in the center and which is adhered to the lower surface of a lead frame in which internal leads are arranged around the opening to seal the lower half of the package, A semiconductor pellet that is mounted on the surface of the first resin body in the opening and is electrically connected to the internal leads, and a second resin that seals the upper half of the package including the semiconductor pellet. A semiconductor device having a body.
口部の周囲に内部リードを配置したリードフレームを金
型に装着して樹脂を注入し、前記リードフレームの下面
に接着してパッケージの下半分を封止した第1の樹脂体
を形成する工程と、前記リードフレームを金型より離脱
させた後前記開口部の第1の樹脂体の表面に半導体ペレ
ットをマウントする工程と、前記半導体ペレットと前記
内部リードとの間を金属細線で接続する工程と、前記半
導体ペレットを含むパッケージの上半分を樹脂封止した
第2の樹脂体を形成する工程とを含むことを特徴とする
半導体装置の製造方法。2. A lead frame having an opening for mounting an element in the center and having internal leads arranged around the opening is mounted in a mold, resin is injected, and the lower surface of the lead frame is bonded. Forming a first resin body that seals the lower half of the package; mounting a semiconductor pellet on the surface of the first resin body in the opening after separating the lead frame from the mold; It includes a step of connecting the semiconductor pellet and the internal lead with a thin metal wire, and a step of forming a second resin body in which an upper half of a package including the semiconductor pellet is resin-sealed. Manufacturing method of semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5137055A JP2555931B2 (en) | 1993-06-08 | 1993-06-08 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5137055A JP2555931B2 (en) | 1993-06-08 | 1993-06-08 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06349870A true JPH06349870A (en) | 1994-12-22 |
JP2555931B2 JP2555931B2 (en) | 1996-11-20 |
Family
ID=15189832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5137055A Expired - Lifetime JP2555931B2 (en) | 1993-06-08 | 1993-06-08 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2555931B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014896A (en) * | 2002-06-10 | 2004-01-15 | Fuji Electric Holdings Co Ltd | Resin sealed semiconductor device and its manufacturing method |
FR2854495A1 (en) * | 2003-04-29 | 2004-11-05 | St Microelectronics Sa | Semiconductor case manufacturing method, involves placing grid in cavity of injection mold, injecting filling material to fill spaces separating spaced parts of grid to obtain plate, and connecting integrated circuit chip to legs |
US7993092B2 (en) | 2007-08-14 | 2011-08-09 | Samsung Electronics Co., Ltd. | Moving carrier for lead frame and method of moving lead frame using the moving carrier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01151239A (en) * | 1987-12-08 | 1989-06-14 | T & K Internatl Kenkyusho:Kk | Method and apparatus for resin-seal molding of semiconductor device |
-
1993
- 1993-06-08 JP JP5137055A patent/JP2555931B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01151239A (en) * | 1987-12-08 | 1989-06-14 | T & K Internatl Kenkyusho:Kk | Method and apparatus for resin-seal molding of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014896A (en) * | 2002-06-10 | 2004-01-15 | Fuji Electric Holdings Co Ltd | Resin sealed semiconductor device and its manufacturing method |
FR2854495A1 (en) * | 2003-04-29 | 2004-11-05 | St Microelectronics Sa | Semiconductor case manufacturing method, involves placing grid in cavity of injection mold, injecting filling material to fill spaces separating spaced parts of grid to obtain plate, and connecting integrated circuit chip to legs |
US7358598B2 (en) | 2003-04-29 | 2008-04-15 | Stmicroelectronics S.A. | Process for fabricating a semiconductor package and semiconductor package with leadframe |
US7993092B2 (en) | 2007-08-14 | 2011-08-09 | Samsung Electronics Co., Ltd. | Moving carrier for lead frame and method of moving lead frame using the moving carrier |
Also Published As
Publication number | Publication date |
---|---|
JP2555931B2 (en) | 1996-11-20 |
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