JP3036339B2 - Semiconductor device - Google Patents

Abstract

PURPOSE:To make a semiconductor device thin and to make an injection balance good in a resin sealing operation by a method wherein a part in which an IC element is to be fixed, by using an insulating adhesive tape or an insulating adhesive, onto the surface of a lead-frame inner lead part is formed in the downward direction. CONSTITUTION:Parts in which an IC element 3 is to be fixed, by using an insulating adhesive tape or an insulating adhesive 4, onto the surface of lead- frame inner leads 2 are formed 7 to the downward direction. Then, the IC element 3 is fixed and bonded to an IC-element mounting part at the lead-frame inner leads 2 which have been formed 7 to the downward direction, and wire bonding pads at the IC element 3 and the lead-frame inner leads 2 are connected by wires 5. Then, a lead frame is set on a metal mold in a resin-sealing molding process, a resin is injected, and the IC element is sealed. Lastly, lead-frame outer leads 6 are bent in a press process, they are cut, and terminals for a semiconductor element are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a COL semiconductor device, a lead frame thereof, and a method of manufacturing the same. More particularly, the present invention relates to a method for manufacturing a COL semiconductor device using an insulating adhesive tape or an insulating adhesive on the upper surface of a lead frame inner lead portion. Forming the part where the IC element is mounted and fixed makes it possible to reduce the thickness of the plastic package after resin encapsulation. In order to improve the arrangement balance, an adverse effect on the lead frame inner lead, the IC element, and the wire when the sealing resin is injected is removed, and the original purpose of protecting the inner portion with the sealing resin can be sufficiently achieved. The above relates to thinning and high reliability of the LOC semiconductor device.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view of a conventional semiconductor device having a COL (chip-on-lead) structure at a general wire height. In FIG. 4, the IC element 3 is fixed to the upper surface of the inner lead 2 of the lead frame using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive 4. Next, the wire bonding pad of the IC element 3 and the lead frame inner lead 2 are wired with the wire 5. Next, in a molding process, the plastic resin 1 is injection-molded to entirely seal and protect the lead frame inner leads 2 of the semiconductor device. Finally, the outer lead 6 of the lead frame is bent in a pressing step to form an external terminal of the semiconductor device.

FIG. 5 shows a conventional COL (chip-on-lead).
FIG. 3 is a cross-sectional view in which wiring is performed with a reduced wire height in order to reduce the thickness of a semiconductor device having a structure. In FIG. 5, the IC element 3 is fixed to the upper surface of the inner lead 2 of the lead frame by using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive 4. Next, the wire bonding pad of the IC element 3 and the lead frame inner lead 2 are wired with the wire 5.
At this time, the height of the wire 5 is set almost at the top of the IC element 3. Next, in a molding process, a plastic resin 1 is injection-molded to form a lead frame inner lead 2 of a semiconductor device.
Is resin-sealed and protected. Finally, the outer lead 6 of the lead frame is bent in the pressing step to form an external terminal of the semiconductor device.

[0004]

FIG. 4 shows a semiconductor device having a structure in which an IC element is fixed to the upper surface of a lead frame inner lead portion by using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive as described above. Then, an insulating adhesive tape or an insulating adhesive 4 is applied to the upper surface of the lead frame inner lead 2 and the IC element 3 is pasted thereon, and the wire bonding pad of the IC element 3 and the lead frame inner lead 2 are connected with the wire 5. Wire to be wired 5
300 μm from the top surface of IC element 3
The wiring must be raised above, and the resin thickness 8 for protecting the wire 5 after sealing the molding resin 1 must be at least 200 to 500 μm or more. Wire 5 due to the flow of resin 1 at the time
However, there is a problem that it is not possible to make the device thinner, for example, it is necessary to allow some movement. In FIG. 5, even if the wire 5 is laid barely on the upper surface of the IC element 3 to make it thinner, the wire 5 hangs down or the wire moves during the injection of the resin 1 in the molding process as described above.
There is a problem that a short circuit between the end face of the element 3 and the wire 5 occurs and it is desired to reduce the thickness. Also, in FIGS. 4 and 5, since the arrangement balance between the upper half and the lower half of the semiconductor device in the horizontal direction is disturbed, the resin injection pressure balance is disturbed even when the resin is sealed in the molding process, and the lead frame inner leads 2 There are a number of problems of moving the moving wire 5 of the moving IC element 3.

The present invention has been made in order to solve the above-mentioned problem, and the place where an IC element is fixed on an upper surface of a lead frame inner lead portion by using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive is directed downward. In addition to making the semiconductor device thinner by forming into the mold, the injection balance at the time of resin encapsulation in the molding process is good, so that there is no adverse effect such as the movement of the lead frame inner lead, IC element, and wire, which is stable. It is an object of the present invention to obtain a highly reliable manufacturing method with a high yield.

[0006]

SUMMARY OF THE INVENTION A plastic resin-sealed semiconductor device having a structure in which an IC element is fixed to the upper surface of an inner lead portion of a lead frame of the present invention by using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive. Forms downward the portion for fixing the IC element on the upper surface of the inner lead portion of the lead frame by using an insulating bonding means such as an adhesive tape or an adhesive. The amount of downward forming of the upper surface of the lead frame inner lead part is based on the thickness of the used lead frame inner lead, the used insulating adhesive tape, the used insulating adhesive, the used IC element, and the wire loop height during wire bonding. Approximately 1/2 of the lead frame inner lead thickness + 1/2 of the IC element thickness
It is sufficient to set about 1/2 of the thickness of the insulating adhesive tape or the insulating adhesive or the like, so that the IC element is arranged at the center of the semiconductor device sealed with resin. By taking such measures, not only can the thickness of the semiconductor device be reduced, but also the resin injection balance at the time of resin sealing in the molding process is improved, and a high quality and stable plastic resin sealed semiconductor device. Is obtained.

[0007]

FIG. 1 is a sectional view showing a first embodiment of the present invention. In FIG. 1, the portion where the IC element 3 is fixed is formed 7 on the upper surface of the lead frame inner lead 2 using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive 4, and the amount of the downward forming is formed. Is the thickness of the lead frame inner lead to be used, the thickness of the insulating adhesive tape or insulating adhesive for insulatingly connecting the used lead frame inner lead to the IC element, the thickness of the IC element to be used, the wire loop at the time of wire bonding. The height is set in consideration of the height, but it is desirable to set the center of the IC element thickness at the center of the total thickness of the completed semiconductor device sealed with plastic resin. Next, the IC element 3 is fixed to the IC element mounting portion of the lead frame inner lead 2 portion formed downward 7 by using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive 4. I
The wire bonding pad of the C element 3 and the lead frame inner lead 2 are connected by a wire. Generally, the height of the wire is about 300 μm from the surface of the IC element. Further, the thickness 8 of the protective resin from the wire 5 after resin sealing in the molding process is designed to be approximately 200 to 500 μm. Next, the lead frame is set in a mold in a resin-sealing molding step, and then resin is injected and sealed. When the resin is sealed, the wire 5 is used because the upper half and the lower half of the package have a good volume balance. IC element 3, lead frame inner lead 2
The IC chip mounting portion and the lead frame inner lead forming portion 7 can be resin-sealed without being adversely affected by movement or the like when the resin flows in. Finally, the lead frame outer lead 6 is bent in a pressing step Cut to make terminals of the semiconductor device.

FIG. 2 is a plan view of a lead frame according to a second embodiment of the present invention, in which an inner lead portion of a lead frame at which an IC element is mounted and fixed is subjected to dimple processing. In FIG. 2, the lead frame inner lead 2
Dimple processing is performed on the IC element mounting and fixing portion 9 of the portion to obtain an IC element mounting and fixing portion dimple 10. Due to the dimple processing, the adhesive strength when the IC element is insulatively joined to the IC mounting and fixing portion 9 of the lead frame inner lead by using an insulative joining means such as an insulative adhesive tape or an insulative adhesive increases the stable quality. Is obtained.

FIG. 3 is a sectional view showing a third embodiment of the present invention, which is a die for forming an inner lead in a portion for mounting and fixing an IC element in a downward direction. In FIG. 3, the lead frame is set on the forming die 12 set on the press machine, and the forming punch 11 is lowered. The shape of the forming punch and die is transferred to the IC element mounting fixing portion of the lead frame inner lead 9, and the lead frame inner lead portion is moved. It is possible to process the IC element mounting and fixing portion 9 downward from the forming portion 7 and, at the same time, to form a dimple on the forming punch 11 to increase the adhesive force when using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive. There is a dimple pattern, and the dimple pattern is transferred to the IC element mounting fixing portion 9 of the inner lead of the lead frame, and can be formed simultaneously with the forming process. Since press working is possible, it is possible to provide an inexpensive, speedy and accurate lead frame.

[0010]

As described above, according to the present invention, there is provided a structure (C, O, O) in which an IC element is mounted and fixed on an upper surface of a lead frame inner lead portion using an insulating bonding means such as an insulating adhesive tape or an insulating adhesive. L-chip-on-lead) The IC element center is arranged at the center of the resin-sealed semiconductor device by forming the IC element mounting fixing portion of the inner lead of the lead frame for the semiconductor device downward, and the arrangement balance is good. The resin injection balance at the time of resin encapsulation in the molding process is improved, and a high quality and stable semiconductor device with plastic resin encapsulation can be obtained. In addition, the amount of downward forming of the fixing portion for mounting the lead frame inner lead IC element, which is the greatest effect of the present invention, is the amount by which the package thickness can be reduced. Also, since the step between the pad on the upper surface of the mounted IC element and the lead frame inner bonding portion is reduced by forming the inner lead downward, the wire is less likely to short-circuit with the corner of the IC element, and the height of the wire is reduced accordingly. And the thickness of the package can be reduced by the reduction in the wire. In addition, by performing dimple processing on the inner lead at the portion where the IC element is mounted and fixed, the adhesive force of an insulating adhesive tape or an insulating adhesive is increased, and a semiconductor device with stable quality can be manufactured.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of the present invention.

FIG. 2 is a plan view showing a second embodiment of the present invention.

FIG. 3 is a sectional view showing a third embodiment of the present invention.

FIG. 4 is a sectional view of a general wire height of a conventional semiconductor device having a COL structure.

FIG. 5 is a cross-sectional view of a low wire height for thinning a conventional COL structure semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Mold sealing resin 2 ... Lead frame inner lead 3 ... IC element 4 ... Insulating adhesive tape or insulating adhesive 5 ... Wire 6 ... Lead frame outer lead 7 ... Lead frame inner lead forming part 8 ... Protective resin thickness 9 ... IC element mounting fixed part 10: IC element mounting fixed part dimple 11: forming punch 12: forming die 13: dimple patterning part

Claims (3)

(57) [Claims] An IC element having an electrode formed on one surface, and a plurality of IC elements each extending to a position overlapping with the other surface of the IC element and the other being used as a terminal for connection to the outside. And an insulating adhesive member provided at a position overlapping with the other surface of the IC element on the lead, interposed between the IC element and the lead, and fixing the IC element and the lead. A connection member that electrically connects the electrode of the IC element and the lead; and a resin that seals a part of the IC element, the adhesive member, and the lead. A semiconductor device, wherein a step is formed at a position between a region overlapping with the other surface of the element and a region of the lead to which the connection member is connected. 2. The semiconductor device according to claim 1, wherein a dimple is formed at a position of the lead overlapping with the other surface of the IC element and at a position where the insulating adhesive member is provided. 3. The step is formed at the center of the thickness of the resin.
2. The semiconductor device according to claim 1, wherein a center of the C element thickness is set.