JP2004087672A - Resin-sealed type semiconductor device and its manufacturing method - Google Patents

Resin-sealed type semiconductor device and its manufacturing method Download PDF

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Publication number
JP2004087672A
JP2004087672A JP2002245163A JP2002245163A JP2004087672A JP 2004087672 A JP2004087672 A JP 2004087672A JP 2002245163 A JP2002245163 A JP 2002245163A JP 2002245163 A JP2002245163 A JP 2002245163A JP 2004087672 A JP2004087672 A JP 2004087672A
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Prior art keywords
bonding
resin
wire
semiconductor device
chip
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JP2002245163A
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Japanese (ja)
Inventor
Shinji Imada
今田　真嗣
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Denso Corp
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Denso Corp
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Priority to JP2002245163A priority Critical patent/JP2004087672A/en
Publication of JP2004087672A publication Critical patent/JP2004087672A/en
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To easily prevent a bonding wire section provided in the vicinity of a second bonding section from coming into contact with semiconductor chips in a resin-sealed type semiconductor device in which a plurality of semiconductor chips connected to each other through a bonding wire is sealed with a resin. <P>SOLUTION: In the resin-sealed type semiconductor device S1, the semiconductor chips 10 and 20 connected to each other through the bonding wire 30 are sealed with a resin 40 together with the bonding wire 30 by setting up the chips 10 and 20 and bonding wire 30 in the cavity of a molding device and injecting the resin 40 into the cavity from a gate. The bonding wire 30 is formed by wire bonding comprising ball bonding which is performed as first bonding and wedge bonding which is performed as second bonding. In the semiconductor device S1, the second boning section 32 of the bonding wire 30 connecting the chips 10 and 20 to each other is positioned farther than the first bonding section 31 of the wire 30 from the resin injecting section 41 of the gate. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、ボンディングワイヤにて結線された複数個の半導体チップを樹脂にて封止してなるマルチチップパッケージとしての樹脂封止型半導体装置およびその製造方法に関する。
【０００２】
【従来の技術】
近年、半導体装置において、小型化、部品点数の削減、高機能化といったニーズがある。これに対しては、各機能を有するＩＣチップを一つのチップに集積化することが最も効果的である。
【０００３】
しかし、チップの組合せによってはマイナス面も大きい。例えば、ＣＰＵチップとメモリチップとの組合せでは、チップ製造プロセスに時間がかかることや、１チップ化のための開発コストが大きいことから、半導体装置のコストがアップするというデメリットがある。
【０００４】
このようなケースでは、複数個の半導体チップを樹脂にてモールドして一つのパッケージに収納するとともに、パッケージ内にて各半導体チップをボンディングワイヤにて結線するマルチチップパッケージとしての樹脂封止型半導体装置が採用される。
【０００５】
このマルチチップパッケージは、１チップ毎に製造すれば良いのでチップ製造プロセスがシンプルであることや、既存のＩＣチップを活用できることなど、チップの製造、開発コストが抑えられるという点でメリットが大きい。すなわち、マルチチップパッケージは、半導体装置における小型化、部品点数削減を低コストで実現できるため、大変有望視されている。
【０００６】
この種のマルチチップパッケージの一般的な製造方法を図５（ａ）、（ｂ）、（ｃ）を参照して述べる。図５において、（ａ）は下型に半導体装置を設置した状態での概略上面図、（ｂ）は（ａ）中のＢ−Ｂ概略断面図、（ｃ）は（ｂ）に対応した断面にて樹脂４０を注入していく状態を示す概略断面図である。
【０００７】
図５（ａ）、（ｂ）における半導体装置は、樹脂封止前のものであり、二つの半導体チップ１０、２０をそれぞれ、リードフレーム５０のチップ搭載部５１に搭載し、各チップ１０、２０間およびチップ１０、２０とリードフレーム５０のリード部５５とをボンディングワイヤ３０、３５により結線し一体化したものである。
【０００８】
この図５に示す例においては、金型（型装置）１００は、上型１１０と下型１２０とを合致させたものであり、それによって形成されたキャビティ１３０内には、上記半導体装置が配置される。そして、金型１００に形成された樹脂溜まりとしてのポット１０１から延びたランナー１０２の先端に、キャビティ１３０に樹脂４０を注入するためのゲート１０３が形成されている。
【０００９】
そして、図５（ｃ）に示すように、ポット１０１内の溶融状態の樹脂４０がプランジャー１０４によりポット１０１から押し出され、ランナー１０２を流れることにより、ゲート１０３からキャビティ１３０へ樹脂４０が注入され充填される。こうして、キャビティ１３０を樹脂４０にて充填した後、樹脂４０を硬化させることで、半導体装置が樹脂４０で封止された樹脂封止型半導体装置ができあがる。
【００１０】
【発明が解決しようとする課題】
しかしながら、本発明者の検討によれば、上記樹脂封止型半導体装置においては、次のような問題が生じることを見出した。
【００１１】
各半導体チップ１０、２０間を結線するボンディングワイヤ３０を形成するためのワイヤボンディング方法としては、第１ボンディングとしてボールボンディング法、第２ボンディングとしてウェッジボンディング法を行う方法が一般的である。
【００１２】
このワイヤボンディング方法を図６に示しておく。まず、図６（ａ）に示す様に、ボンディング装置におけるキャピラリ２００の内部に挿入されたワイヤ３０において、キャピラリ２００の先端から導出された部分の先端に、放電加工によりボール部（イニシャルボール）３０ａを形成する。
【００１３】
次に、このボール部３０ａを第１ボンディング面である第１の半導体チップ１０のパッド１１に押し当てて、熱及び超音波振動を加えながら接合し、第１ボンディングを行う（図６（ｂ））。その後、図６（ｃ）の破線矢印に示すように、ワイヤ３０を、キャピラリ２００の先端から繰り出して上記パッド１１との接合部（第１ボンディング部）３１から第２ボンディング面である第２の半導体チップ２０のパッド２１まで引き回す。
【００１４】
次に、第２の半導体チップ２０のパッド２１まで引き回されたワイヤ３０を、キャピラリ２００の先端面にて当該パッド２１に押しつけて、熱及び超音波振動を加えながら接合し、第２ボンディングを行う（図６（ｄ））。
【００１５】
そして、図６（ｅ）の矢印に示す順に、キャピラリ２００を上方へ移動させ、第２ボンディング部３２からワイヤ３０を切り離す。このとき、キャピラリ２００の先端からは、ワイヤ３０が突出してテール部３０ｂとして残り、このテール部３０ｂに再び上記同様に放電加工を行い、上記ボール部３０ａを形成する。こうして、ワイヤボンディングの１サイクルが完了し、次のサイクルを行う。
【００１６】
このようなワイヤボンディングを行った結果形成されたワイヤ３０は、上記図５（ｂ）、（ｃ）に示すように、第１の半導体チップ１０側の第１ボンディング部３１近傍では、ワイヤ３０はほぼ直角に近い角度で立ち上がっているが、第２の半導体チップ２０側の第２ボンディング部で３２近傍は、ワイヤ３０は寝た形となっておりチップ２０に近づいたものとなっている。
【００１７】
このようなボンディングワイヤ３０の形状では、次のような問題が生じる。図７は、図５における第２ボンディング部３２近傍のワイヤ３０の形状を拡大して示す図である。
【００１８】
図７に示す例では、第２の半導体チップ２０のパッド２１の上には、第２ボンディング部の接合寿命の確保とパッド２１の下部のダメージ（例えば、酸化膜クラック等）を回避するため、予め第２ボンディング面であるパッド２１の表面に金等からなる金属バンプ３２ａを形成し、この金属バンプ３２ａ上に第２ボンディングを行っている。
【００１９】
このように、チップ１０、２０間を結線するボンディングワイヤ３０が、第２ボンディング部３２近傍にて立ち上がっておらず、その立ち上がり角度θが小さい（例えば十数°）ため、ワイヤ３０とチップ２０とのギャップＧ２が小さいものとなる。
【００２０】
ここで、従来では、上記図５（ｃ）に示すように樹脂４０が流れる。そのため、図７中の矢印Ｙ２に示すように、樹脂４０が流れ、このような形状のボンディングワイヤ３０に対しては、流れてくる樹脂４０によって図７中の矢印Ｆ２に示すように、第２ボンディング部３２近傍のワイヤ部分をチップ２０方向へ押さえる力が加わり、ワイヤ３０がチップ２０のエッジ２０ａに接することが起こりうる。
【００２１】
チップ２０の表面は絶縁性の保護膜２２で被覆されているが、チップ２０のエッジ２０ａはダイシングカットされた部位であり、この部分にワイヤ３０が接触すると、ワイヤ２０とチップ３０との間で電気的な短絡が発生する可能性が高い。
【００２２】
なお、このようなチップ１０、２０間を結線するボンディングワイヤ３０において、第１ボンディング部近傍のワイヤ部分は、上述したように、直角に近い角度で立ち上がっており、チップとも十分に離れているため、上記第２ボンディング側のような問題は生じない。
【００２３】
このように、本発明者は、従来のマルチチップパッケージとしての樹脂封止型半導体装置において、チップ間を結線するボンディングワイヤでは、第２ボンディング部近傍におけるワイヤ部分がチップに接触し、電気的な短絡が発生しやすくなるという新たな問題を見出した。
【００２４】
この問題に対しては、ワイヤボンディングにおける第２ボンディングの際に、ボンディングツールの動きを制御して第２ボンディング部近傍におけるワイヤの立ち上がり角度を大きくする方法も考えられるが、その立ち上がり角度にばらつきが大きく、チップとの接触防止という点では不十分である。
【００２５】
また、第２ボンディング側の半導体チップの厚さを薄くして、第２ボンディング面の位置を低くすることで、第２ボンディング側のワイヤの立ち上がり角度を大きくすることも考えられるが、チップを薄くするための工程が必要となり、コストアップする。
【００２６】
本発明は、上記したような本発明者が新たに見出した問題に鑑みてなされたものであり、ボンディングワイヤにて結線された複数個の半導体チップを樹脂にて封止してなる樹脂封止型半導体装置において、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止できるようにすることを目的とする。
【００２７】
【課題を解決するための手段】
上記目的を達成するため、請求項１に記載の発明では、第１ボンディングとしてボールボンディング法、第２ボンディングとしてウェッジボンディング法を行うワイヤボンディングによって形成されたボンディングワイヤ（３０）によって結線された複数個の半導体チップ（１０、２０）を、型装置のキャビティ（１３０）内に設置してゲート（１０３）から樹脂（４０）を注入することにより、複数個の半導体チップおよびボンディングワイヤを樹脂にて封止してなる樹脂封止型半導体装置において、半導体チップを結線するボンディングワイヤの第２ボンディング部（３２）が第１ボンディング部（３１）よりも樹脂におけるゲート注入部（４１）から遠い位置となっていることを特徴とする。
【００２８】
本発明のように、半導体チップを結線するボンディングワイヤの第２ボンディング部を第１ボンディング部よりも樹脂におけるゲート注入部から遠い位置とすることで、型装置内における樹脂の充填の際には、樹脂の流れによって第２ボンディング部近傍のボンディングワイヤ部分をチップとは反対方向へ押し上げるようにすることができる。
【００２９】
そのため、本発明によれば、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止することができる。
【００３０】
請求項２に記載の発明では、キャビティ（１３０）とこのキャビティ内に樹脂（４０）を注入するゲート（１０３）とを有する型装置（１００）を用い、複数個の半導体チップ（１０、２０）が、第１ボンディングとしてボールボンディング法、第２ボンディングとしてウェッジボンディング法を行うワイヤボンディングによって形成されたボンディングワイヤ（３０）によって結線されてなる半導体装置（Ｓ１’）を、キャビティ内に設置し、ゲートからキャビティ内に樹脂を注入することにより、樹脂にて半導体装置を封止するようにした樹脂封止型半導体装置の製造方法において、半導体チップを結線するボンディングワイヤの第２ボンディング部（３２）が第１ボンディング部（３１）よりもゲートから遠い位置となるように、半導体装置をキャビティ内に設置することを特徴とする。
【００３１】
本発明のように、半導体チップを結線するボンディングワイヤの第２ボンディング部を第１ボンディング部よりもゲートから遠い位置となるように、半導体装置をキャビティ内に設置することで、上記請求項１の発明と同様に、型装置内における樹脂の充填の際には、樹脂の流れによって第２ボンディング部近傍のボンディングワイヤ部分をチップとは反対方向へ押し上げるようにすることができる。
【００３２】
そのため、本発明によれば、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止することができる。
【００３３】
請求項３に記載の発明では、キャビティ（１３０）とこのキャビティ内に樹脂（４０）を注入するゲート（１０３）とを有する型装置（１００）を用い、複数個の半導体チップ（１０、２０）がその一面側においてボンディングワイヤ（３０）によって結線されてなる半導体装置（Ｓ１’）を、キャビティ内に設置し、ゲートからキャビティ内に樹脂を注入することにより、樹脂にて半導体装置を封止するようにした樹脂封止型半導体装置の製造方法において、型装置として、キャビティ内に半導体装置を設置した状態において半導体チップの一面とは反対の他面側に面する部位に、ゲートが設けられているものを用いることを特徴とする。
【００３４】
それによれば、キャビティ内に半導体チップを設置した状態において半導体チップにおけるワイヤボンディング面である一面とは反対の他面側に面する部位に、ゲートを設けることにより、型装置内における樹脂の充填の際には、樹脂は当該半導体チップの他面側から一面側へ順に充填されていくことになる、
このような樹脂の流れとなるため、第２ボンディング部近傍のボンディングワイヤ部分は、チップとは反対方向へ押し上げられる。そのため、本発明によれば、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止することができる。
【００３５】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００３６】
【発明の実施の形態】
以下、本発明を図に示す実施形態について説明する。なお、以下の各実施形態相互において互いに同一の部分には、図中、同一符号を付してある。
【００３７】
（第１実施形態）
図１は本発明の第１実施形態に係る樹脂封止型半導体装置Ｓ１の概略断面構成を示す図である。
【００３８】
このものは、大きくは、複数個（図示例では２個）の半導体チップ１０、２０と、これら半導体チップ１０、２０を結線するボンディングワイヤ３０と、これら半導体チップ１０、２０およびボンディングワイヤ３０包み込むように封止する樹脂４０からなる。
【００３９】
半導体チップ１０、２０は、例えば機能の異なるＩＣチップからなり、本例では同じ厚さ（例えば０．４ｍｍ）の矩形板状のシリコンチップからなる。これら半導体チップ１０、２０はそれぞれ、リードフレーム５０のチップ搭載部であるダイベッド５１上に搭載され、導電性接着剤等のダイボンド材（図示せず）を介して固定されている。
【００４０】
そして、各半導体チップ１０、２０を結線するボンディングワイヤとしてのチップ間ワイヤ３０は、図１の右側の半導体チップ１０を第１ボンディング側、左側の半導体チップ２０側を第２ボンディング側として、第１ボンディングをボールボンディング法、第２ボンディングをウェッジボンディング法にて行うワイヤボンディングによって形成されている。
【００４１】
ここで、図１中の右側に位置し第１ボンディングされるチップ１０を第１の半導体チップ１０とし、左側に位置し第２ボンディングされるチップ２０を第２の半導体チップ２０とする。なお、半導体チップは２個ではなく、３個以上でも良い。
【００４２】
つまり、チップ間ワイヤ３０は、上記図６に示すワイヤボンディング方法にて形成されている。そして、図１には、チップ間ワイヤ３０と第１の半導体チップ１０との接続部３１すなわち第１ボンディング部３１、および、チップ間ワイヤ３０と第２の半導体チップ２０との接続部３２すなわち第２ボンディング部３２が示されている。
【００４３】
ここで、図２は、図１における第２ボンディング部３２近傍のチップ間ワイヤ３０の形状を拡大して示す図である。
【００４４】
図２に示す例では、第２の半導体チップ２０のパッド２１の上には、予め第２ボンディング面であるパッド２１の表面に金等からなる金属バンプ３２ａを形成し、この金属バンプ３２ａ上に第２ボンディングを行っている。また、第２の半導体チップ２０の表面には、シリコン窒化膜等からなる保護膜２２が形成されている。
【００４５】
この金属バンプ３２ａは、第２ボンディング部３２の接合寿命の確保とパッド２１の下部のダメージ（例えば、酸化膜クラック等）を回避するために形成されたものであり、ボールボンド法で作ることができ、その厚さｔは例えば１０〜３０μｍ程度にすることができる。なお、この金属バンプ３２ａは無くても良い。
【００４６】
また、図１に示すように、第１および第２の半導体チップ１０、２０は、リードフレーム５０のリード部５５ともボンディングワイヤ３５によって結線されている。また、上記したチップ間ワイヤ３０およびボンディングワイヤ３５は、金やアルミニウム等のワイヤを用いて形成されている。
【００４７】
次に、半導体チップ１０、２０および各ワイヤ３０、３５を包み込むように封止する樹脂４０は、エポキシ樹脂等の通常のモールド用樹脂材料からなる。この樹脂４０は、リードフレーム５０のダイベッド５１およびリード部５５の一部も封止している。
【００４８】
ここで、リードフレーム５０のリード部５５のうち樹脂４０にて封止された部位がインナーリード、樹脂４０から突出する部位がアウターリードであり、アウターリードにて外部基板との接続がなされる。このようなリードフレーム５０は銅等の公知のリードフレーム材料を用いて形成され、本例では板厚０．２ｍｍ程度のものにできる。
【００４９】
そして、樹脂４０は、各ボンディングワイヤ３０、３５によって結線された複数個の半導体チップ１０、２０およびリードフレーム５０を、型装置のキャビティ内に設置してゲートから溶融状態の樹脂を注入、充填して硬化させることで形成されるものである。
【００５０】
このような樹脂４０においては、上記ゲートの注入部分に対応した部位は、上記型装置から取り出す際に折られて分断される部分であり、当該部分はゲート注入部４１として、外観上、目視にて識別のつくものである。
【００５１】
本実施形態では、この樹脂４０におけるゲート注入部４１は、図１において樹脂４０の右側端部に位置している。すなわち、チップ間ワイヤ３０の第２ボンディング部３２の方が第１ボンディング部３１よりもゲート注入部４１から遠い位置となっている。
【００５２】
このことは、樹脂成形の型装置において、樹脂を注入、充填する際に、図１中の右側から左側に樹脂４０が流れて充填されることを意味する。つまり、チップ間ワイヤ３０についてみれば、図１中の右側に位置する第１ボンディング部３１側から図１中の左側に位置する第２ボンディング部３２側に樹脂４０が流れて充填されることを意味する。
【００５３】
このような樹脂４０の流れについて、次に述べる本実施形態の半導体装置Ｓ１の製造方法の中で、より具体的に述べる。図３は、本実施形態に係る樹脂封止型半導体装置Ｓ１の製造方法における樹脂封止工程を説明する説明図である。
【００５４】
図３において、（ａ）は型装置としての金型１００の下型１２０に樹脂封止前の半導体装置Ｓ１’を設置した状態を示す平面図、（ｂ）は金型１００の上型１１０と下型１２０を閉じた状態を（ａ）中のＡ−Ａ概略断面にて示す図、（ｃ）は（ｂ）において樹脂４０をキャビティ１３０の途中まで充填した状態を示す図である。
【００５５】
［金型の構成］
まず、図３を参照して、金型１００の構成について述べる。この金型１００は、上下の型１１０、１２０を切削加工等により形成し、上下の型１１０、１２０を合致可能とすることで、内部にキャビティ１３０を形成したものである。
【００５６】
この金型１００は、一般のトランスファモールドと同様、ポット１０１から注入されて軟化した樹脂４０が加圧されて、ランナー１０２、ゲート１０３を通ってキャビティ１３０に注入されるものである。
【００５７】
ここで、図３に示す金型１００においては、ゲート１０３は、矩形状のキャビティ１３０の右端コーナー部に位置し、かつ半導体チップ１０、２０におけるワイヤボンド面とは反対側の面に対向する下型１２０に設けられている。このゲート１０３は、例えば開口幅Ｗが０．５ｍｍ、開口深さＬが０．２ｍｍ程度のものにできる。
【００５８】
［樹脂封止型半導体装置の製造方法］
次に、本実施形態の樹脂封止型半導体装置Ｓ１の製造方法について述べる。まず、リードフレーム５０のダイベッド５１に各半導体チップ１０、２０を搭載し、上記した方法でワイヤボンディングを行うことにより、各チップ１０、２０の間および各チップ１０、２０とリードフレーム５０のリード部５５とを結線する。これにより、樹脂封止前の半導体装置Ｓ１’を形成する。
【００５９】
次に、図３（ａ）に示すように、下型１２０のキャビティ１３０に上記半導体装置Ｓ１’を設置する。このとき、チップ間ワイヤ３０の第２ボンディング部３２が第１ボンディング部３１よりもゲート１０３から遠い位置となるように、半導体装置Ｓ１’をキャビティ１３０内に設置する。
【００６０】
なお、この半導体装置Ｓ１’のダイベッド５１には吊りリード５３が連結されており、リードフレーム５０における吊りリード５３およびリード部５５は、図示しないリードフレームの枠部等により一体に連結されている。次に、図３（ｂ）に示すように、下型１２０と上型１１０とを合致させて閉じる。
【００６１】
そして、図３（ｃ）に示すように、樹脂封止工程を行う。金型１００の外周にヒータ等を設けることにより、金型１００を樹脂４０の溶融温度以上に加熱する。用いられる樹脂４０としては、例えば、クレゾール−ノボラック骨格を有するエポキシ系樹脂やビフェニル骨格を有するエポキシ系樹脂等が挙げられる。
【００６２】
次に、図３（ｃ）に示すように、プランジャー１０４を用いてポット１０１から溶融状態にある樹脂４０を加圧することで、当該樹脂４０をランナー１０２から、ゲート１０３を介してキャビティ１３０に注入、充填する。
【００６３】
さらに、加圧を続け、キャビティ１３０全体を溶融状態の樹脂４０にて充填した後、樹脂５０の硬化を行う。その後、半導体装置を金型１００から取り出し、上記したリードフレームの枠部の分断やアウターリードのフォーミング等を行うことで、上記図１に示す樹脂封止型半導体装置Ｓ１が製造される。
【００６４】
ところで、本実施形態では、上述したように、図１において、チップ間ワイヤ３０の第２ボンディング部３２の方が第１ボンディング部３１よりもゲート注入部４１から遠い位置となっている。
【００６５】
このことは、上記製造方法において、チップ間ワイヤ３０の第２ボンディング部３２が第１ボンディング部３１よりもゲート１０３から遠い位置となるように、半導体装置Ｓ１’をキャビティ１３０内に設置することと同じことである。
【００６６】
そのため、上記製造方法において、上記図３（ｃ）に示す樹脂を注入、充填する工程のときに、図３（ｃ）中のキャビティ１３０内の各矢印に示すように、チップ間ワイヤ３０における第１ボンディング部３１側から第２ボンディング部３２側に樹脂４０が流れて充填される。
【００６７】
そして、詳しくは上記図２に示すように、樹脂４０の流れＹ１によって第２ボンディング部３２近傍のチップ間ワイヤ３０の部分には、第２の半導体チップ２０とは反対方向へ押し上げる力Ｆ１が働く。
【００６８】
そのため、チップ間ワイヤ３０が、第２ボンディング部３２近傍にて立ち上がっておらず、その立ち上がり角度θが小さく（例えば十数°）、ワイヤ３０とチップ２０とのギャップＧ１が小さいものであっても、流れてくる樹脂４０によって、ワイヤ２０がチップ２０のエッジ２０ａに接することが防止される。
【００６９】
このように、本実施形態によれば、型装置１００に半導体装置Ｓ１’を設置する際に、チップ間ワイヤ３０の向きを考慮して設置するだけの簡単な方法で、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止することができる。そして、チップ間ワイヤ３０とチップ２０との短絡等を防止できる。
【００７０】
また、図３（ｃ）に示すように、第１および第２の半導体チップ１０、２０間ではダイベッド５１も分断されており、両チップ１０、２０間に隙間が存在する。そのため、樹脂４０の注入時には、図３（ｃ）に示す矢印のように、樹脂４０は当該隙間を通って第２の半導体チップ２０の一面から他面、あるいは他面から一面へと流れる。
【００７１】
このような隙間を介した樹脂４０の流れにより、第２ボンディング部３２近傍のチップ間ワイヤ３０の部分を押し上げる作用がいっそう効果的に働く。具体的には、図３（ｃ）中の各矢印のうち第２の半導体チップ２０の他面から上記隙間を通って一面に流れる樹脂４０の流れが、その作用を促進する。
【００７２】
（第２実施形態）
図４は本発明の第２実施形態に係る樹脂封止型半導体装置の製造方法における樹脂封止工程を説明する概略断面図である。上記第１実施形態と相違するところについて主として述べる。
【００７３】
本実施形態では、金型１００として、キャビティ１３０内に半導体装置Ｓ１’を設置した状態において半導体チップ１０、２０の一面すなわちワイヤボンディング面とは反対の他面側に面する下型１２０の面に、ゲート１０３が設けられているものを用いる。
【００７４】
また、キャビティ１３０内に設置する半導体装置Ｓ１’において、上記第１実施形態とは逆に、第２の半導体チップ２０（図４中の左側）が第１ボンディング側、第１の半導体チップ１０（図４中の右側）が第２ボンディング側となっており、チップ間ワイヤ３０の第１、第２ボンディング部３１、３２の位置が、第１実施形態とは逆になっている。
【００７５】
このようなゲート１０３の位置であれば、図４に示すように、金型１００内における樹脂４０の充填の際には、樹脂４０は半導体チップ１０、２０の他面側から一面側へ順に充填されていくことになる。このような樹脂４０の流れとなるため、図４中の白矢印に示すように、チップ間ワイヤ３０全体が半導体チップ１０、２０とは反対方向（チップから離れる方向）へ押し上げられる。
【００７６】
そのため、本実施形態では、第１ボンディング部３１近傍のチップ間ワイヤ３０の部分、および第２ボンディング部３２近傍のチップ間ワイヤ３０の部分は、第２の半導体チップ２０とは反対方向へ押し上げられる。そのため、本実施形態の製造方法によっても、第２ボンディング部近傍のボンディングワイヤ部分が半導体チップに接触するのを容易に防止することができる。
【００７７】
ここで、本実施形態では、キャビティ１３０内に設置される半導体装置Ｓ１’において、上記第１実施形態と同様、第１の半導体チップ１０側が第１ボンディング側、第２の半導体チップ２０側が第２ボンディング側であっても良いことはもちろんである。
【００７８】
また、本実施形態では、図４に示す例に限らず、金型１００として、キャビティ１３０内に半導体装置Ｓ１’を設置した状態において半導体チップ１０、２０の他面側から一面側へ樹脂４０の流れが向かうような位置にゲート１０３が設けられたものを用いれば良い。
【００７９】
例えば、図４に示す半導体装置Ｓ１’、上型１１０、下型１２０の位置関係においては、ゲートはキャビティ１０３のコーナー部でなくとも、下型１２０における半導体チップ１０、２０の他面と対向する面の中央部にあっても良い。また、ゲートの数も複数でも良い。
【００８０】
さらには、図４とは上下逆の位置となるように半導体装置Ｓ１’を設置した場合は、半導体チップ１０、２０の他面と対向する面は、上型１１０に位置するが、このとき、上型１１０にゲートを設ければ、本実施形態の製造方法を実現できる。
【００８１】
また、本実施形態は、半導体チップ１０、２０におけるワイヤボンディング面とは反対側の面から、チップ間ワイヤ３０全体を、そのループ突出方向へ押し上げるように樹脂４０が流れるため、チップ間ワイヤ３０は、第１および第２ボンディングがともにウェッジボンディング法にて行われたものであっても適用可能である。
【図面の簡単な説明】
【図１】本発明の第１実施形態に係る樹脂封止型半導体装置の概略断面図である。
【図２】図１における第２ボンディング部近傍のチップ間ワイヤの形状を拡大して示す図である。
【図３】図１に示す樹脂封止型半導体装置の製造工程を示す図である。
【図４】本発明の第２実施形態に係る樹脂封止型半導体装置の製造方法における樹脂封止工程を説明する概略断面図である。
【図５】従来の一般的な樹脂封止型半導体装置の製造方法を示す図である。
【図６】半導体チップ間のワイヤボンディング方法を示す図である。
【図７】図５における第２ボンディング部近傍のワイヤ形状を拡大して示す図である。
【符号の説明】
１０…第１の半導体チップ、２０…第２の半導体チップ、
３０…チップ間ワイヤ、３１…第１ボンディング部、
３２…第２ボンディング部、４０…樹脂、４１…ゲート注入部、
１００…金型、１０３…ゲート、１３０…キャビティ、
Ｓ１’…樹脂封止前の半導体装置。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin-encapsulated semiconductor device as a multi-chip package formed by encapsulating a plurality of semiconductor chips connected by bonding wires with a resin, and a method for manufacturing the same.
[0002]
[Prior art]
In recent years, there is a need for downsizing, reduction in the number of parts, and higher functionality in a semiconductor device. For this, it is most effective to integrate the IC chips having the respective functions into one chip.
[0003]
However, depending on the combination of chips, the downside is significant. For example, the combination of a CPU chip and a memory chip has a demerit that the cost of the semiconductor device is increased because the chip manufacturing process takes time and the development cost for making one chip is large.
[0004]
In such a case, a resin-encapsulated semiconductor as a multi-chip package in which a plurality of semiconductor chips are molded with resin and stored in one package, and each semiconductor chip is connected with bonding wires in the package. A device is employed.
[0005]
This multi-chip package has a great advantage in that the manufacturing and development costs of the chip can be reduced because the chip manufacturing process is simple and the existing IC chip can be used because it is sufficient to manufacture each chip. That is, the multi-chip package is very promising because it can realize downsizing and reduction in the number of components in a semiconductor device at low cost.
[0006]
A general manufacturing method of this type of multichip package will be described with reference to FIGS. 5 (a), 5 (b), and 5 (c). In FIG. 5, (a) is a schematic top view with a semiconductor device installed in the lower mold, (b) is a schematic cross-sectional view along BB in (a), and (c) is a cross-section corresponding to (b). It is a schematic sectional drawing which shows the state which inject | pours the resin 40 by.
[0007]
The semiconductor devices in FIGS. 5A and 5B are those before resin sealing, and the two semiconductor chips 10 and 20 are mounted on the chip mounting portion 51 of the lead frame 50, respectively. The chip 10 and 20 and the lead part 55 of the lead frame 50 are connected by bonding wires 30 and 35 and integrated.
[0008]
In the example shown in FIG. 5, a mold (mold apparatus) 100 is obtained by matching an upper mold 110 and a lower mold 120, and the semiconductor device is disposed in a cavity 130 formed thereby. Is done. A gate 103 for injecting the resin 40 into the cavity 130 is formed at the tip of the runner 102 extending from the pot 101 as a resin reservoir formed in the mold 100.
[0009]
As shown in FIG. 5C, the molten resin 40 in the pot 101 is pushed out of the pot 101 by the plunger 104 and flows through the runner 102, whereby the resin 40 is injected from the gate 103 into the cavity 130. Filled. In this way, after the cavity 130 is filled with the resin 40, the resin 40 is cured, whereby a resin-encapsulated semiconductor device in which the semiconductor device is sealed with the resin 40 is completed.
[0010]
[Problems to be solved by the invention]
However, according to the study by the present inventors, it has been found that the following problems occur in the resin-encapsulated semiconductor device.
[0011]
As a wire bonding method for forming the bonding wire 30 that connects the semiconductor chips 10 and 20, a method of performing a ball bonding method as the first bonding and a wedge bonding method as the second bonding is common.
[0012]
This wire bonding method is shown in FIG. First, as shown in FIG. 6A, in the wire 30 inserted into the capillary 200 in the bonding apparatus, a ball portion (initial ball) 30a is formed on the tip of the portion led out from the tip of the capillary 200 by electric discharge machining. Form.
[0013]
Next, the ball portion 30a is pressed against the pad 11 of the first semiconductor chip 10 which is the first bonding surface, and bonded while applying heat and ultrasonic vibration to perform the first bonding (FIG. 6B). ). After that, as shown by the broken line arrow in FIG. 6C, the wire 30 is fed out from the tip of the capillary 200 and the second bonding surface, which is the second bonding surface, from the bonding portion (first bonding portion) 31 to the pad 11. The semiconductor chip 20 is routed to the pad 21.
[0014]
Next, the wire 30 routed to the pad 21 of the second semiconductor chip 20 is pressed against the pad 21 at the tip surface of the capillary 200 and bonded while applying heat and ultrasonic vibration, and second bonding is performed. This is performed (FIG. 6 (d)).
[0015]
Then, the capillary 200 is moved upward in the order indicated by the arrows in FIG. 6E to disconnect the wire 30 from the second bonding portion 32. At this time, the wire 30 protrudes from the tip of the capillary 200 and remains as a tail portion 30b, and the tail portion 30b is subjected to electric discharge machining again in the same manner as described above to form the ball portion 30a. Thus, one cycle of wire bonding is completed and the next cycle is performed.
[0016]
As shown in FIGS. 5B and 5C, the wire 30 formed as a result of the wire bonding is formed in the vicinity of the first bonding portion 31 on the first semiconductor chip 10 side. The wire 30 rises at an angle close to a right angle, but in the vicinity of 32 in the second bonding portion on the second semiconductor chip 20 side, the wire 30 is in a lying shape and approaches the chip 20.
[0017]
Such a shape of the bonding wire 30 causes the following problems. FIG. 7 is an enlarged view showing the shape of the wire 30 in the vicinity of the second bonding portion 32 in FIG.
[0018]
In the example shown in FIG. 7, on the pad 21 of the second semiconductor chip 20, in order to ensure the bonding life of the second bonding portion and avoid damage (for example, oxide film cracks) below the pad 21, Metal bumps 32a made of gold or the like are formed in advance on the surface of the pad 21, which is the second bonding surface, and second bonding is performed on the metal bumps 32a.
[0019]
Thus, since the bonding wire 30 connecting the chips 10 and 20 does not rise in the vicinity of the second bonding portion 32 and the rising angle θ is small (for example, several tens of degrees), the wire 30 and the chip 20 The gap G2 is small.
[0020]
Here, conventionally, the resin 40 flows as shown in FIG. Therefore, the resin 40 flows as shown by an arrow Y2 in FIG. 7, and the second bonding wire 30 having such a shape causes the second resin 40 to flow as shown by an arrow F2 in FIG. 7. A force that presses the wire portion in the vicinity of the bonding portion 32 toward the chip 20 may be applied, and the wire 30 may come into contact with the edge 20 a of the chip 20.
[0021]
The surface of the chip 20 is covered with an insulating protective film 22, but the edge 20 a of the chip 20 is a part that has been cut by dicing, and when the wire 30 comes into contact with this part, between the wire 20 and the chip 30. There is a high possibility of electrical shorts.
[0022]
In the bonding wire 30 connecting the chips 10 and 20, the wire portion in the vicinity of the first bonding portion rises at an angle close to a right angle as described above, and is sufficiently separated from the chip. The problem on the second bonding side does not occur.
[0023]
As described above, in the resin-encapsulated semiconductor device as a conventional multi-chip package, the inventor of the present invention has a bonding wire that connects chips, the wire portion in the vicinity of the second bonding portion contacts the chip, and the electrical A new problem has been found that short circuits are likely to occur.
[0024]
To solve this problem, it is conceivable to increase the rising angle of the wire in the vicinity of the second bonding portion by controlling the movement of the bonding tool during the second bonding in wire bonding, but the rising angle varies. Large and insufficient in terms of preventing contact with the chip.
[0025]
It is also conceivable to increase the rising angle of the wire on the second bonding side by reducing the thickness of the semiconductor chip on the second bonding side and lowering the position of the second bonding surface. Process is required, which increases costs.
[0026]
The present invention has been made in view of the problems newly found by the inventor as described above, and is formed by sealing a plurality of semiconductor chips connected by bonding wires with a resin. An object of the present invention is to easily prevent a bonding wire portion in the vicinity of a second bonding portion from coming into contact with a semiconductor chip.
[0027]
[Means for Solving the Problems]
In order to achieve the above object, according to the first aspect of the present invention, a plurality of wires connected by bonding wires (30) formed by wire bonding in which a ball bonding method is used as the first bonding and a wedge bonding method is used as the second bonding. The semiconductor chips (10, 20) are placed in the cavity (130) of the mold apparatus and a resin (40) is injected from the gate (103), thereby sealing a plurality of semiconductor chips and bonding wires with the resin. In the resin-encapsulated semiconductor device formed by stopping, the second bonding part (32) of the bonding wire for connecting the semiconductor chip is located farther from the gate injection part (41) in the resin than the first bonding part (31). It is characterized by.
[0028]
As in the present invention, by setting the second bonding portion of the bonding wire for connecting the semiconductor chip to a position farther from the gate injection portion in the resin than the first bonding portion, when filling the resin in the mold apparatus, The bonding wire portion in the vicinity of the second bonding portion can be pushed up in the direction opposite to the chip by the flow of the resin.
[0029]
Therefore, according to the present invention, it is possible to easily prevent the bonding wire portion near the second bonding portion from coming into contact with the semiconductor chip.
[0030]
In the invention according to claim 2, a mold apparatus (100) having a cavity (130) and a gate (103) for injecting resin (40) into the cavity is used, and a plurality of semiconductor chips (10, 20) are used. However, a semiconductor device (S1 ′) connected by a bonding wire (30) formed by wire bonding that performs ball bonding as the first bonding and wedge bonding as the second bonding is installed in the cavity, and the gate In the method of manufacturing a resin-encapsulated semiconductor device in which a resin is sealed into the cavity by sealing the semiconductor device with the resin, the second bonding portion (32) of the bonding wire for connecting the semiconductor chip is provided. The semiconductor is located farther from the gate than the first bonding part (31). The device is installed in a cavity.
[0031]
As in the present invention, the semiconductor device is installed in the cavity so that the second bonding portion of the bonding wire for connecting the semiconductor chip is located farther from the gate than the first bonding portion. Similar to the invention, when the resin is filled in the mold apparatus, the bonding wire portion in the vicinity of the second bonding portion can be pushed up in the direction opposite to the chip by the flow of the resin.
[0032]
Therefore, according to the present invention, it is possible to easily prevent the bonding wire portion near the second bonding portion from coming into contact with the semiconductor chip.
[0033]
In a third aspect of the present invention, a mold apparatus (100) having a cavity (130) and a gate (103) for injecting resin (40) into the cavity is used, and a plurality of semiconductor chips (10, 20) are used. The semiconductor device (S1 ′) formed by bonding with the bonding wire (30) on one side is placed in the cavity, and the semiconductor device is sealed with the resin by injecting resin into the cavity from the gate. In the method of manufacturing a resin-sealed semiconductor device, a gate is provided at a portion facing the other surface side opposite to one surface of the semiconductor chip in a state where the semiconductor device is installed in the cavity as the mold device. It is characterized by using what is.
[0034]
According to this, in a state where the semiconductor chip is installed in the cavity, the resin is filled in the mold apparatus by providing a gate at a portion facing the other surface side opposite to the one surface which is the wire bonding surface in the semiconductor chip. At that time, the resin is sequentially filled from the other surface side of the semiconductor chip to the one surface side,
Because of this resin flow, the bonding wire portion in the vicinity of the second bonding portion is pushed up in the direction opposite to the chip. Therefore, according to the present invention, it is possible to easily prevent the bonding wire portion near the second bonding portion from coming into contact with the semiconductor chip.
[0035]
In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.
[0036]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments shown in the drawings will be described below. In the following embodiments, the same parts are denoted by the same reference numerals in the drawings.
[0037]
(First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of a resin-encapsulated semiconductor device S1 according to the first embodiment of the present invention.
[0038]
In general, this includes a plurality of (two in the illustrated example) semiconductor chips 10, 20, bonding wires 30 connecting these semiconductor chips 10, 20, and these semiconductor chips 10, 20 and bonding wires 30. It consists of resin 40 which seals.
[0039]
The semiconductor chips 10 and 20 are, for example, IC chips having different functions. In this example, the semiconductor chips 10 and 20 are rectangular silicon chips having the same thickness (for example, 0.4 mm). Each of these semiconductor chips 10 and 20 is mounted on a die bed 51, which is a chip mounting portion of the lead frame 50, and is fixed via a die bond material (not shown) such as a conductive adhesive.
[0040]
An inter-chip wire 30 as a bonding wire for connecting the semiconductor chips 10 and 20 is a first bonding side in which the right semiconductor chip 10 in FIG. 1 is the first bonding side and the left semiconductor chip 20 side is the second bonding side. It is formed by wire bonding in which bonding is performed by a ball bonding method and second bonding is performed by a wedge bonding method.
[0041]
Here, the first bonded chip 10 positioned on the right side in FIG. 1 is referred to as a first semiconductor chip 10, and the second bonded chip 20 positioned on the left side is referred to as a second semiconductor chip 20. Note that the number of semiconductor chips is not two, but may be three or more.
[0042]
That is, the inter-chip wire 30 is formed by the wire bonding method shown in FIG. 1 shows a connection part 31 between the inter-chip wire 30 and the first semiconductor chip 10, that is, the first bonding part 31, and a connection part 32 between the inter-chip wire 30 and the second semiconductor chip 20, ie, the first Two bonding parts 32 are shown.
[0043]
Here, FIG. 2 is an enlarged view showing the shape of the inter-chip wire 30 in the vicinity of the second bonding portion 32 in FIG.
[0044]
In the example shown in FIG. 2, a metal bump 32a made of gold or the like is formed in advance on the surface of the pad 21 as the second bonding surface on the pad 21 of the second semiconductor chip 20, and the metal bump 32a is formed on the metal bump 32a. Second bonding is performed. A protective film 22 made of a silicon nitride film or the like is formed on the surface of the second semiconductor chip 20.
[0045]
The metal bump 32a is formed in order to ensure the bonding life of the second bonding portion 32 and to avoid damage (for example, an oxide film crack) under the pad 21, and can be made by a ball bond method. The thickness t can be set to about 10 to 30 μm, for example. The metal bump 32a may not be provided.
[0046]
As shown in FIG. 1, the first and second semiconductor chips 10 and 20 are also connected to the lead portions 55 of the lead frame 50 by bonding wires 35. The inter-chip wires 30 and the bonding wires 35 are formed using wires such as gold and aluminum.
[0047]
Next, the resin 40 encapsulating the semiconductor chips 10 and 20 and the wires 30 and 35 is made of a normal molding resin material such as an epoxy resin. The resin 40 also seals a part of the die bed 51 and the lead portion 55 of the lead frame 50.
[0048]
Here, in the lead portion 55 of the lead frame 50, the portion sealed with the resin 40 is the inner lead, and the portion protruding from the resin 40 is the outer lead, and the outer lead is connected to the external substrate. Such a lead frame 50 is formed using a known lead frame material such as copper, and in this example, the lead frame 50 can have a thickness of about 0.2 mm.
[0049]
The resin 40 is filled with a plurality of semiconductor chips 10 and 20 and lead frames 50 connected by bonding wires 30 and 35 in a cavity of the mold apparatus, and molten resin is injected and filled from the gate. It is formed by curing.
[0050]
In such a resin 40, the portion corresponding to the injection portion of the gate is a portion that is folded and divided when taken out from the mold apparatus, and the portion is visually confirmed as a gate injection portion 41 in appearance. Can be identified.
[0051]
In the present embodiment, the gate injection portion 41 in the resin 40 is located at the right end of the resin 40 in FIG. That is, the second bonding part 32 of the inter-chip wire 30 is located farther from the gate injection part 41 than the first bonding part 31.
[0052]
This means that the resin 40 flows and fills from the right side to the left side in FIG. 1 when the resin is injected and filled in the mold apparatus for resin molding. That is, regarding the inter-chip wire 30, the resin 40 flows from the first bonding part 31 side located on the right side in FIG. 1 to the second bonding part 32 side located on the left side in FIG. means.
[0053]
The flow of the resin 40 will be described more specifically in the method for manufacturing the semiconductor device S1 of the present embodiment described below. FIG. 3 is an explanatory view illustrating a resin sealing step in the method for manufacturing the resin-encapsulated semiconductor device S1 according to the present embodiment.
[0054]
3A is a plan view showing a state in which the semiconductor device S1 ′ before resin sealing is installed on the lower mold 120 of the mold 100 as a mold apparatus, and FIG. 3B is an upper mold 110 of the mold 100. The figure which shows the state which closed the lower mold | type 120 in the AA schematic cross section in (a), (c) is a figure which shows the state which filled the resin 40 to the middle of the cavity 130 in (b).
[0055]
[Mold configuration]
First, the configuration of the mold 100 will be described with reference to FIG. In this mold 100, upper and lower molds 110 and 120 are formed by cutting or the like, and the upper and lower molds 110 and 120 can be matched to form a cavity 130 therein.
[0056]
In the mold 100, like the general transfer mold, the resin 40 injected from the pot 101 and softened is pressurized and injected into the cavity 130 through the runner 102 and the gate 103.
[0057]
Here, in the mold 100 shown in FIG. 3, the gate 103 is positioned at the right end corner portion of the rectangular cavity 130 and faces the surface opposite to the wire bonding surface of the semiconductor chips 10 and 20. The mold 120 is provided. For example, the gate 103 can have an opening width W of 0.5 mm and an opening depth L of about 0.2 mm.
[0058]
[Method of manufacturing resin-encapsulated semiconductor device]
Next, a method for manufacturing the resin-encapsulated semiconductor device S1 of this embodiment will be described. First, the semiconductor chips 10 and 20 are mounted on the die bed 51 of the lead frame 50, and wire bonding is performed by the above-described method, so that the lead portions of the chips 10 and 20 and the lead frame 50 are connected to each other. 55 is connected. Thereby, the semiconductor device S1 ′ before resin sealing is formed.
[0059]
Next, as shown in FIG. 3A, the semiconductor device S <b> 1 ′ is installed in the cavity 130 of the lower mold 120. At this time, the semiconductor device S <b> 1 ′ is installed in the cavity 130 so that the second bonding portion 32 of the inter-chip wire 30 is farther from the gate 103 than the first bonding portion 31.
[0060]
A suspension lead 53 is connected to the die bed 51 of the semiconductor device S1 ′, and the suspension lead 53 and the lead portion 55 in the lead frame 50 are integrally connected by a frame portion of a lead frame (not shown). Next, as shown in FIG. 3B, the lower mold 120 and the upper mold 110 are matched and closed.
[0061]
Then, as shown in FIG. 3C, a resin sealing step is performed. By providing a heater or the like on the outer periphery of the mold 100, the mold 100 is heated to a temperature higher than the melting temperature of the resin 40. Examples of the resin 40 to be used include an epoxy resin having a cresol-novolak skeleton and an epoxy resin having a biphenyl skeleton.
[0062]
Next, as shown in FIG. 3C, the resin 40 in a molten state is pressurized from the pot 101 using the plunger 104, so that the resin 40 is moved from the runner 102 to the cavity 130 via the gate 103. Fill and fill.
[0063]
Further, pressurization is continued and the entire cavity 130 is filled with the molten resin 40, and then the resin 50 is cured. Thereafter, the semiconductor device is taken out from the mold 100, and the resin-encapsulated semiconductor device S1 shown in FIG. 1 is manufactured by dividing the frame portion of the lead frame and forming the outer lead.
[0064]
By the way, in this embodiment, as described above, in FIG. 1, the second bonding portion 32 of the inter-chip wire 30 is located farther from the gate injection portion 41 than the first bonding portion 31.
[0065]
This means that in the above manufacturing method, the semiconductor device S1 ′ is installed in the cavity 130 so that the second bonding part 32 of the inter-chip wire 30 is farther from the gate 103 than the first bonding part 31. Same thing.
[0066]
Therefore, in the manufacturing method described above, in the step of injecting and filling the resin shown in FIG. 3C, as shown by the arrows in the cavity 130 in FIG. Resin 40 flows and fills from the first bonding portion 31 side to the second bonding portion 32 side.
[0067]
In detail, as shown in FIG. 2, a force F1 that pushes in the direction opposite to the second semiconductor chip 20 acts on the portion of the inter-chip wire 30 in the vicinity of the second bonding portion 32 by the flow Y1 of the resin 40. .
[0068]
Therefore, even if the inter-chip wire 30 does not rise in the vicinity of the second bonding portion 32, the rising angle θ is small (for example, tens of degrees), and the gap G1 between the wire 30 and the chip 20 is small. The flowing resin 40 prevents the wire 20 from coming into contact with the edge 20 a of the chip 20.
[0069]
As described above, according to the present embodiment, when the semiconductor device S1 ′ is installed in the mold apparatus 100, it is possible to simply install the semiconductor device S1 ′ in consideration of the direction of the inter-chip wire 30 in the vicinity of the second bonding portion. It is possible to easily prevent the bonding wire portion from contacting the semiconductor chip. And the short circuit etc. with the wire 30 between chips | tips and the chip | tip 20 can be prevented.
[0070]
Further, as shown in FIG. 3C, the die bed 51 is also divided between the first and second semiconductor chips 10 and 20, and a gap exists between both the chips 10 and 20. Therefore, when the resin 40 is injected, the resin 40 flows from one surface of the second semiconductor chip 20 to the other surface, or from the other surface to the one surface through the gap, as indicated by an arrow shown in FIG.
[0071]
The action of pushing up the portion of the inter-chip wire 30 in the vicinity of the second bonding portion 32 by the flow of the resin 40 through such a gap works more effectively. Specifically, among the arrows in FIG. 3C, the flow of the resin 40 that flows from the other surface of the second semiconductor chip 20 to the entire surface through the gap promotes its action.
[0072]
(Second Embodiment)
FIG. 4 is a schematic cross-sectional view for explaining a resin sealing step in the method for manufacturing a resin sealed semiconductor device according to the second embodiment of the present invention. The differences from the first embodiment will be mainly described.
[0073]
In the present embodiment, the mold 100 is formed on the surface of the lower mold 120 that faces one surface of the semiconductor chips 10 and 20, that is, the other surface opposite to the wire bonding surface, in a state where the semiconductor device S 1 ′ is installed in the cavity 130. A device provided with a gate 103 is used.
[0074]
Further, in the semiconductor device S1 ′ installed in the cavity 130, the second semiconductor chip 20 (left side in FIG. 4) is on the first bonding side and the first semiconductor chip 10 (on the left side in FIG. 4), contrary to the first embodiment. The right side in FIG. 4 is the second bonding side, and the positions of the first and second bonding portions 31 and 32 of the inter-chip wire 30 are opposite to those in the first embodiment.
[0075]
In such a position of the gate 103, as shown in FIG. 4, when the resin 40 is filled in the mold 100, the resin 40 is filled in order from the other surface side of the semiconductor chips 10 and 20 to the one surface side. It will be done. Due to such a flow of the resin 40, the entire inter-chip wire 30 is pushed up in a direction opposite to the semiconductor chips 10 and 20 (a direction away from the chip) as indicated by a white arrow in FIG.
[0076]
Therefore, in this embodiment, the portion of the inter-chip wire 30 near the first bonding portion 31 and the portion of the inter-chip wire 30 near the second bonding portion 32 are pushed up in the direction opposite to the second semiconductor chip 20. . Therefore, the manufacturing method of this embodiment can also easily prevent the bonding wire portion near the second bonding portion from coming into contact with the semiconductor chip.
[0077]
Here, in the present embodiment, in the semiconductor device S1 ′ installed in the cavity 130, the first semiconductor chip 10 side is the first bonding side, and the second semiconductor chip 20 side is the second, as in the first embodiment. Of course, it may be on the bonding side.
[0078]
Further, in the present embodiment, the resin 40 is not limited to the example illustrated in FIG. 4, but the resin 40 is transferred from the other surface side of the semiconductor chips 10 and 20 to the one surface side as the mold 100 in a state where the semiconductor device S1 ′ is installed in the cavity 130. A gate provided with a gate 103 at a position where the flow is directed may be used.
[0079]
For example, in the positional relationship of the semiconductor device S1 ′, the upper mold 110, and the lower mold 120 shown in FIG. It may be in the center of the surface. Also, the number of gates may be plural.
[0080]
Furthermore, when the semiconductor device S1 ′ is installed so as to be upside down with respect to FIG. 4, the surface facing the other surface of the semiconductor chips 10 and 20 is located in the upper mold 110. If the upper mold 110 is provided with a gate, the manufacturing method of this embodiment can be realized.
[0081]
In the present embodiment, since the resin 40 flows so as to push up the entire inter-chip wire 30 in the loop protruding direction from the surface opposite to the wire bonding surface in the semiconductor chips 10 and 20, the inter-chip wire 30 is The first and second bonding can be applied even when both are performed by the wedge bonding method.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a resin-encapsulated semiconductor device according to a first embodiment of the present invention.
2 is an enlarged view showing the shape of an inter-chip wire in the vicinity of a second bonding portion in FIG.
3 is a diagram showing a manufacturing process of the resin-encapsulated semiconductor device shown in FIG. 1;
FIG. 4 is a schematic cross-sectional view illustrating a resin sealing step in a method for manufacturing a resin sealed semiconductor device according to a second embodiment of the present invention.
FIG. 5 is a diagram showing a conventional method for manufacturing a general resin-encapsulated semiconductor device.
FIG. 6 is a diagram showing a wire bonding method between semiconductor chips.
7 is an enlarged view showing a wire shape in the vicinity of a second bonding portion in FIG.
[Explanation of symbols]
10 ... 1st semiconductor chip, 20 ... 2nd semiconductor chip,
30 ... Wire between chips, 31 ... First bonding part,
32 ... 2nd bonding part, 40 ... Resin, 41 ... Gate injection | pouring part,
100 ... Mold, 103 ... Gate, 130 ... Cavity,
S1 ′: Semiconductor device before resin sealing.

Claims (3)

第１ボンディングとしてボールボンディング法、第２ボンディングとしてウェッジボンディング法を行うワイヤボンディングによって形成されたボンディングワイヤ（３０）によって結線された複数個の半導体チップ（１０、２０）を、型装置のキャビティ（１３０）内に設置してゲート（１０３）から樹脂（４０）を注入することにより、前記複数個の半導体チップおよび前記ボンディングワイヤを前記樹脂にて封止してなる樹脂封止型半導体装置において、前記半導体チップを結線する前記ボンディングワイヤの第２ボンディング部（３２）が第１ボンディング部（３１）よりも前記樹脂におけるゲート注入部（４１）から遠い位置となっていることを特徴とする樹脂封止型半導体装置。A plurality of semiconductor chips (10, 20) connected by bonding wires (30) formed by wire bonding in which ball bonding is used as the first bonding and wedge bonding is used as the second bonding, are formed into cavities (130 In the resin-encapsulated semiconductor device in which the plurality of semiconductor chips and the bonding wires are sealed with the resin by injecting the resin (40) from the gate (103) after being installed in Resin sealing characterized in that the second bonding part (32) of the bonding wire for connecting the semiconductor chip is located farther from the gate injection part (41) in the resin than the first bonding part (31). Type semiconductor device. キャビティ（１３０）とこのキャビティ内に樹脂（４０）を注入するゲート（１０３）とを有する型装置（１００）を用い、
複数個の半導体チップ（１０、２０）が、第１ボンディングとしてボールボンディング法、第２ボンディングとしてウェッジボンディング法を行うワイヤボンディングによって形成されたボンディングワイヤ（３０）によって結線されてなる半導体装置（Ｓ１’）を、前記キャビティ内に設置し、
前記ゲートから前記キャビティ内に前記樹脂を注入することにより、前記樹脂にて前記半導体装置を封止するようにした樹脂封止型半導体装置の製造方法において、
前記半導体チップを結線する前記ボンディングワイヤの第２ボンディング部（３２）が第１ボンディング部（３１）よりも前記ゲートから遠い位置となるように、前記半導体装置を前記キャビティ内に設置することを特徴とする樹脂封止型半導体装置の製造方法。Using a mold apparatus (100) having a cavity (130) and a gate (103) for injecting resin (40) into the cavity,
A semiconductor device (S1 ′) in which a plurality of semiconductor chips (10, 20) are connected by bonding wires (30) formed by wire bonding in which ball bonding is used as first bonding and wedge bonding is used as second bonding. ) In the cavity,
In the method of manufacturing a resin-encapsulated semiconductor device in which the semiconductor device is sealed with the resin by injecting the resin into the cavity from the gate.
The semiconductor device is installed in the cavity so that the second bonding part (32) of the bonding wire for connecting the semiconductor chip is located farther from the gate than the first bonding part (31). A method for manufacturing a resin-encapsulated semiconductor device. キャビティ（１３０）とこのキャビティ内に樹脂（４０）を注入するゲート（１０３）とを有する型装置（１００）を用い、
複数個の半導体チップ（１０、２０）がその一面側においてボンディングワイヤ（３０）によって結線されてなる半導体装置（Ｓ１’）を、前記キャビティ内に設置し、
前記ゲートから前記キャビティ内に前記樹脂を注入することにより、前記樹脂にて前記半導体装置を封止するようにした樹脂封止型半導体装置の製造方法において、
前記型装置として、前記キャビティ内に前記半導体装置を設置した状態において前記半導体チップの前記一面とは反対の他面側に面する部位に、前記ゲートが設けられているものを用いることを特徴とする樹脂封止型半導体装置の製造方法。Using a mold apparatus (100) having a cavity (130) and a gate (103) for injecting resin (40) into the cavity,
A semiconductor device (S1 ′) in which a plurality of semiconductor chips (10, 20) are connected by bonding wires (30) on one side thereof is installed in the cavity,
In the method of manufacturing a resin-encapsulated semiconductor device in which the semiconductor device is sealed with the resin by injecting the resin into the cavity from the gate.
The mold device is characterized in that the gate is provided in a portion facing the other surface opposite to the one surface of the semiconductor chip in a state where the semiconductor device is installed in the cavity. A method for manufacturing a resin-encapsulated semiconductor device.
JP2002245163A 2002-08-26 2002-08-26 Resin-sealed type semiconductor device and its manufacturing method Pending JP2004087672A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120914A (en) * 2011-12-09 2013-06-17 Semiconductor Components Industries Llc Manufacturing method of circuit device
JP2013232544A (en) * 2012-04-27 2013-11-14 Lapis Semiconductor Co Ltd Resin sealing method and manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120914A (en) * 2011-12-09 2013-06-17 Semiconductor Components Industries Llc Manufacturing method of circuit device
JP2013232544A (en) * 2012-04-27 2013-11-14 Lapis Semiconductor Co Ltd Resin sealing method and manufacturing method of semiconductor device

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