JP2002329815A - Semiconductor device, its manufacturing method and its production device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the malfunction and insufficiency of a semiconductor element with a temperature rise while making the volume of a semiconductor device smaller than a conventional system. SOLUTION: The semiconductor device has a semiconductor element 1, external terminals 3 arranged at a fixed separation from the semiconductor element 1, gold wires 5 connecting the semiconductor element 1 and the external terminals 3, and a molding resin 7 sealing at least the semiconductor element 1 and the gold wires 5. A plurality of irregular sections are formed to top face 28 and underside 29 of the molding resin 7. The surface area of the molding resin 7 can be increased, and the heat-exchanging efficiency of the molding resin 7 can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device suitable for application to a resin-sealed logic LSI or the like mounted on an electronic device such as a personal computer, a method of manufacturing the same, and an apparatus for manufacturing the same. . More specifically, a plurality of concave / convex portions are provided in a predetermined region of an exterior member for sealing the semiconductor element and the conductive member, so that heat generated by the operation of the semiconductor element can be efficiently radiated to the outside of the exterior member.

[0002]

2. Description of the Related Art In recent years, as the performance of electronic devices such as personal computers has become higher, the operating speed of semiconductor devices mounted on these electronic devices has been increasing. When the operation speed of the semiconductor device increases, the semiconductor element generates heat and the temperature rises. Therefore, the resistance value of the wiring pattern or the diffusion layer of the semiconductor element increases, which may cause malfunction or malfunction.

FIG. 8 is a sectional view showing a configuration example of a semiconductor device 90 according to a conventional example. The semiconductor device 90 is a resin-encapsulated semiconductor device and includes a cooling unit for preventing a temperature of a semiconductor element from rising. The semiconductor device 90 has a semiconductor element 91, an external terminal 92 disposed at a predetermined distance from the semiconductor element 91, and one end joined to the electrode portion of the semiconductor element 91, and the other end connected to the external terminal 92. A gold wire 93 is provided on the upper surface. In addition, the semiconductor device 9
Reference numeral 0 denotes a mold resin 94 that covers a part of the external terminal 92 and seals the semiconductor element 91 and the gold wire 93.

Further, a radiation fin 95 is attached to the semiconductor device 90 on a mold resin 94 via an adhesive member. The radiation fins 95 are made of a metal having a high thermal conductivity or the like, and have a plurality of uneven portions on the surface thereof. Thus, heat generated by the operation of the semiconductor element 91 is transferred from the mold resin 94 to the radiation fins 9.
5, and quickly radiates heat to the outside air.

[0005]

However, in the conventional semiconductor device 90, since the heat radiation fins 95 are mounted on the mold resin 94, there is a limit to the miniaturization of the semiconductor device 90. Therefore, the semiconductor device 90 provided with the heat radiation fins 95 may be a major factor that hinders downsizing of an electronic device on which the device 90 is mounted.

[0006] Further, in manufacturing the semiconductor device 90, parts costs and mounting costs of the heat radiation fins 95 are required, so that there is a problem that the semiconductor device 90 is expensive. Further, since the heat radiation fins 95 are mounted on the mold resin 94 via the adhesive member, the adhesive force of the adhesive member weakens over time, and the heat radiation fins 95 may fall off the mold resin 94.

Accordingly, the present invention has been made to solve such a conventional problem, and it is possible to prevent malfunction and malfunction of a semiconductor element due to a rise in temperature, and to reduce the problem as compared with the conventional method. It is an object of the present invention to provide a semiconductor device capable of reducing the volume of the semiconductor device, a manufacturing method thereof, and a manufacturing apparatus thereof.

[0008]

An object of the present invention is to provide a semiconductor device, a terminal member disposed at a predetermined distance from the semiconductor device, a conductive member for connecting the semiconductor device and the terminal member, This problem is solved by a semiconductor device including an exterior member for sealing at least a semiconductor element and a conductive member, and a plurality of uneven portions formed in a predetermined region of the exterior member. ADVANTAGE OF THE INVENTION According to the semiconductor device which concerns on this invention, the surface area of an exterior member can be increased and the heat | fever generate | occur | produced from a semiconductor element can be efficiently radiated to outside air.

In a method of manufacturing a semiconductor device according to the present invention, a step of joining a semiconductor element and a terminal member having a predetermined shape with a conductive member, and sealing at least the semiconductor element and the conductive member with an exterior member. And a step of forming a plurality of concave and convex portions in a predetermined region of the exterior member. ADVANTAGE OF THE INVENTION According to the manufacturing method of the semiconductor device which concerns on this invention, the surface area of an exterior member can be increased and the semiconductor device which improved the heat exchange efficiency of the exterior member can be manufactured with high reproducibility.

Further, the semiconductor device manufacturing apparatus according to the present invention is an apparatus for sealing a semiconductor element with an exterior member,
A mold for enclosing the semiconductor element and defining the shape of an exterior member, and an injection device for injecting the exterior member into the mold are provided, and a plurality of uneven portions are provided on a predetermined surface inside the mold. It is characterized by comprising.

According to the apparatus for manufacturing a semiconductor device of the present invention, a plurality of uneven portions can be formed in a predetermined region of an exterior member for sealing a semiconductor element, so that the surface area of the exterior member can be increased. Therefore, a semiconductor device having excellent heat dissipation can be manufactured with good reproducibility.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to an embodiment of the present invention, a method for manufacturing the same, and a device for manufacturing the same will be described below with reference to the drawings. In this embodiment,
A plurality of concave and convex portions are provided in a predetermined region of an exterior member that seals a semiconductor element and a conductive member, so that heat generated by the operation of the semiconductor element can be efficiently dissipated to the outside of the exterior member, and the semiconductor accompanying a rise in temperature. This is to prevent malfunction and malfunction of the element. (1) Semiconductor Device FIG. 1 is a cross-sectional view showing a configuration example of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 is a semiconductor device having a heat radiation function for preventing an excessive temperature rise of a semiconductor element. This semiconductor device 100 has a semiconductor element 1. The semiconductor element 1 is obtained by cutting a silicon wafer on which a large number of semiconductor elements are formed along a scribe line. Each of the cut semiconductor elements 1 is provided with a plurality of electrode portions. These electrode portions are connected to terminal members via conductive members. The size of the semiconductor element 1 is
For example, it is about 3 mm long × 1.5 mm wide × 0.3 mm high. The size of the electrode portion of the semiconductor element 1 is 20
It is about 0 μm × 200 μm in width.

The semiconductor device 100 has a die pad 8 for fixing the semiconductor element 1. This die pad 8
Is formed by punching a copper alloy plate. The size of the die pad 8 is, for example, about 4 mm long × 3 mm wide × 0.2 mm thick.

Further, the semiconductor device 100 has an external terminal 3 which is an example of a terminal member. This external terminal 3
It is formed by punching a copper alloy plate similarly to the die pad 8. For example, a total of 18 external terminals 3 are provided symmetrically with respect to the semiconductor element 1 as a center, and a distance of about 2 mm is provided between the external terminals 3 and the semiconductor element 1. The size of each of these external terminals 3 is
For example, length 1.3 mm x width 0.3 mm x thickness 0.2 m
m.

The semiconductor device 100 has a gold wire 5 which is an example of a conductive member. One end of the gold wire 5 is joined to the electrode portion of the semiconductor element 1 and the other end is joined to the upper surface of the external terminal 3. Thereby, the semiconductor element 1 and the external terminal 3 are connected. The diameter of the gold wire 5 is about 30 μm, and the length is about 2.5 mm.

The semiconductor device 100 has a mold resin 7 which is an example of an exterior member. The molding resin 7 covers a part of the external terminal 3 and seals the semiconductor element 1 and the gold wire 5. This mold resin 7
Accordingly, the semiconductor element 1, the gold wire 5, and the external terminal 3
The relative position to each is fixed. In addition, a part of these external terminals 3, the semiconductor element 1, and the gold wire 5 are covered with a mold resin 7 so as to be shielded from oxygen and moisture in the air. The mold resin 7 is made of, for example, an epoxy resin, a silica-based filler, a curing agent, and other additives.

In the semiconductor device 100, a plurality of uneven portions are provided on the upper surface 28 and the lower surface 29 of the molding resin 7. With the uneven portions, the surface area of the mold resin 7 can be increased, and the heat exchange efficiency of the mold resin 7 can be improved. The space shape of one concave portion of the mold resin 7 is a cube, the number of the concave portions is n, and the size of the concave portion is length × width × depth = L ×
If W × D, the increase ΔS of the surface area of the mold resin 7
Can be represented by an equation. ΔS = 2 nD (L + W)

For example, a length L × width W × depth D = 0.5 mm × 0.5
20 × 20 mm × 0.5 mm concavities, for a total of 40
It is assumed that there are provided. In this case, the increase amount ΔS of the surface area of the mold resin 7 is 40 mm ^{2 according} to the equation.

As described above, according to the semiconductor device of the present invention, the upper surface 28 and the lower surface 29 of the mold resin 7 for sealing the semiconductor element 1 and the external terminals 3 are formed with a plurality of uneven portions. is there. Therefore, the surface area of the mold resin 7 can be increased, and the heat generated by the operation of the semiconductor element 1 can be efficiently radiated to the outside air. As a result, malfunction or malfunction of the semiconductor element 1 due to a rise in temperature can be prevented. Compared with the conventional method, the volume can be reduced while maintaining the heat exchange function, and the miniaturization of a personal computer or the like on which the semiconductor device is mounted can be promoted.

In this embodiment, the case where a plurality of uneven portions are formed on the upper surface 28 and the lower surface 29 of the mold resin 7 has been described, but the present invention is not limited to this. In accordance with the layout on the mounting board on which the device 100 is mounted, an uneven portion may be provided only on the lower surface 29 of the mold resin 7 or an uneven portion may be provided on the side surface. Further, the space shape of the concave portion of the mold resin 7 is not limited to a cube, and may be, for example, a column.

(2) Apparatus for Manufacturing Semiconductor Device Next, an apparatus for manufacturing the semiconductor device 100 shown in FIG. 1 will be described. FIG. 2 is a cross-sectional view illustrating a configuration example of a mold injection mold molding apparatus (hereinafter, also referred to as a molding apparatus) 50, which is an example of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

The molding apparatus 50 shown in FIG.
have. The mold 40 includes a semiconductor element and defines the shape of a mold resin as an example of an exterior member. A cavity (hereinafter also referred to as a cavity) 12 is provided inside the mold 40. A semiconductor element is provided near the center of the cavity 12. Then, the molding resin is injected into the cavity 12 containing the semiconductor element and is molded. Mold 40
Is made of, for example, an iron member. Cavity 12
Is 12 mm long × 5 mm wide × height 2.
It is about 5 mm.

The mold 40 is provided with a runner 14 serving as an inlet for the mold resin. This runner 1
Reference numeral 4 has a groove shape and extends to the vicinity of each cavity 12. Further, the cavity 12 and the runner 14
A gate 16 serving as an oil passage for the mold resin is provided therebetween. The mold resin introduced to the vicinity of the cavity 12 along the runner 14 flows into the cavity 12 through the gate 16. The mold 40 is provided with a heating means (not shown). The mold resin introduced into the runner 14 is heated by this heating means, and its viscosity is reduced to improve the fluidity of the cavity 1.
2.

The molding device 50 has a pot 18 and a plunger 19 which are an example of an injection device. The pot 18 is a mold resin supply port to the mold 40. The plunger 19 presses the mold resin in the pot 18 into the mold 40 and pressurizes it. These pots 18
And a pair of plungers 19 are provided above the runner 14. The plunger 19 is configured to operate in the vertical direction in FIG. 2 by hydraulic pressure.

The downward movement of the plunger 19 causes the molding resin to be injected from the pot 18 into the runner 14. Then, the mold resin is introduced into the cavity 12 from the runner 14 through the gate 16 while being heated. After the cavity 12 is filled with the mold resin, the plunger 19 is further moved downward to press the mold resin. Thus, the mold resin is heated and pressurized in the cavity 12 to be polymerized and solidified.

The above-mentioned mold 40 is composed of an upper mold 42 and a lower mold 44 as shown in FIG. 3, and the upper mold 42 and the lower mold 44 are overlapped. I have. The inner surface 23 of the upper mold 42 and the inner surface 25 of the lower mold 44 are provided symmetrically with a plurality of uneven portions, respectively. For example, in the upper mold 42 and the lower mold 44,
Each of the 20 projections is provided, and the size of the projection is 0.5 mm in length × 0.5 mm in width × 0.5 mm in height.
mm.

By using the mold 40, a mold resin having a plurality of uneven portions corresponding to the uneven portions of the mold 40 can be molded. For example, it is possible to mold a mold resin having 20 concave portions each having a length of about 0.5 mm × a width of 0.5 mm × a depth of about 0.5 mm on each of an upper surface and a lower surface. Since the surface area can be increased as compared with the molded resin having no irregularities, the heat exchange efficiency of the molded resin for sealing the semiconductor element can be improved.

As described above, the molding apparatus 5 according to the present invention
According to No. 0, a plurality of concave and convex portions are provided on the inner surfaces 23 and 25 of the mold 40 into which the mold resin is injected. Therefore, the molding resin can be molded so as to provide a plurality of uneven portions, and the surface area of the molding resin can be increased.

With this, the heat exchange efficiency of the mold resin for sealing the semiconductor element can be improved, so that a semiconductor device having excellent heat dissipation can be manufactured with good reproducibility. Compared with the conventional method, there is no need to provide a radiation fin, so that component costs can be reduced.

In this embodiment, the upper and lower molds 42 and 44 are provided with the concave and convex portions so that the upper mold 42 and the lower mold 44 are symmetrical. However, the present invention is not limited to this. As shown in FIG. 4, the irregularities of the lower mold 44 may be larger than the irregularities of the upper mold 42. Accordingly, a mold resin having a particularly large surface area in the downward direction can be molded, so that a semiconductor device having excellent heat radiation in the direction of the mounting substrate can be manufactured.

(3) Method of Manufacturing Semiconductor Device Next, a method of manufacturing the semiconductor device 100 shown in FIG. 1 will be described. 5 to 7 are process diagrams showing a method (Nos. 1 to 3) for manufacturing the semiconductor device 100 according to the embodiment of the present invention. Here, using the molding device 50 described above,
It is assumed that the semiconductor device 100 is manufactured.

First, a lead frame formed by punching a copper alloy plate into a predetermined shape is prepared in advance. The lead frame includes a die pad for fixing the semiconductor element 1 and external terminals as an example of a terminal member. A plurality of the external terminals are provided at a predetermined distance from the die pad.

Next, as shown in FIG. 5, the semiconductor element 1 is bonded onto the die pad 8 of the lead frame. This is performed using, for example, a die bonding apparatus generally used in a semiconductor device assembly process. In the adhesive,
Ag paste or the like is used. Die pad 8 and external terminal 3
Are separated from each other in advance, so that the semiconductor element 1 and the external terminal 3 are separated from each other by a predetermined distance. This separation distance is, for example, about 2 mm.

Further, after bonding the semiconductor element 1 on the die pad 8, one end of the gold wire 5, which is an example of the conductive member, is joined to the upper surface of the external terminal 3, and the other end is joined to the electrode part of the semiconductor element 1. Thereby, the semiconductor element 1 and the external terminal 3 are connected to the gold wire 5.
Can be connected via The connection between the electrode portion of the semiconductor element 1 and the gold wire 5 and the connection between the gold wire 5 and the external terminal 3 are performed by, for example, using a wire bonding apparatus generally used in a semiconductor device assembly process. Pressure and heating.

As described above, the lead frame in which the semiconductor element 1 is mounted and the semiconductor element 1 and the external terminal 3 are connected by the gold wire 5 is placed on the lower mold 44 of the molding apparatus 50 shown in FIG. To place. At this time, the external terminal 3 is hung on the side edge of the lower mold 44.

After the lead frame on which the semiconductor element 1 is mounted is placed at a predetermined position on the lower mold 44, the upper mold 42 is overlaid and fixed on the lower mold 44, as shown by the broken arrow in FIG. Thus, the external terminals 3 are sandwiched between the upper mold 42 and the lower mold 44, and the semiconductor element 1 is fixed near the center of the cavity.

Next, mold resin is introduced into the runner 14 shown in FIG. Then, in order to improve the fluidity of the mold resin, the mold 40 is heated by a heating means (not shown). Then, the mold resin is heated to lower its viscosity little by little, and as shown in FIG.
Through to the cavity 12. After the cavity 12 is completely filled with the mold resin, the plunger 19 is further moved toward the runner 14 to press the mold resin. When this state is maintained for several minutes, the mold resin is polymerized and hardened.

The molding resin is composed of, for example, an epoxy resin, a silica-based filler, a curing agent, and other additives. The curing conditions are, for example, molding temperature 1
50-180 ° C, molding pressure 30-100 kg / cm ² ,
The molding time is about 1 to 3 minutes.

After the molding resin has hardened, the upper mold 42 and the lower mold 44 of the mold 40 are separated as shown in FIG. The mold resin 7 molded in the cavity has a plurality of irregularities on the upper surface 28 and the lower surface 29 according to the irregularities of the upper mold 42 and the lower mold 44. The surface areas of the upper surface 28 and the lower surface 29 of the mold resin 7 are increased by the plurality of uneven portions.

The upper mold 42 is separated from the lower mold 44, the mold resin 7 in which the semiconductor element 1 is sealed is taken out of the mold 40, and burrs of the mold resin 7 are removed with high-pressure water or the like. Thus, the semiconductor device 100 having the heat dissipation function shown in FIG. 1 is completed. As described above, according to the method for manufacturing the semiconductor device 100 according to the present invention, the semiconductor element 1 and the gold wire 5
Are formed on the upper surface 28 and the lower surface 29 of the mold resin 7 for sealing the resin. Therefore, the surface area of the mold resin 7 can be increased, and the semiconductor device 100 excellent in heat dissipation can be manufactured with good reproducibility. As a result, the heat radiation fins do not have to be attached to the surface of the mold resin 7 as compared with the conventional method, and the manufacturing cost of the semiconductor device can be reliably reduced.

In this embodiment, a case has been described in which a plurality of uneven portions are formed in a predetermined region of the mold resin 7 using the mold 40. However, the means for forming the uneven portions is not limited to the mold 40. Absent. Irregular portions may be formed by performing laser processing or cutting processing on the surface of the molded resin 7 after molding so that the sealing function of the molded resin 7 is not significantly impaired.

[0042]

According to the semiconductor device of the present invention, a plurality of uneven portions are formed in a predetermined region of an exterior member for sealing a semiconductor element and a conductive member. With this configuration, the surface area of the exterior member can be increased, and the heat generated by the operation of the semiconductor element can be efficiently radiated to the outside air. Therefore, malfunction or malfunction of the semiconductor element due to the rise in temperature can be prevented. Compared with the conventional method, the volume can be reduced while maintaining the heat exchange function, and the miniaturization of an electronic device on which the semiconductor device is mounted can be promoted.

Further, according to the method of manufacturing a semiconductor device of the present invention, a plurality of uneven portions are formed in a predetermined region of an exterior member for sealing a semiconductor element and a conductive member. With this configuration, the surface area of the exterior member can be increased, and a semiconductor device with improved heat exchange efficiency of the exterior member can be manufactured with good reproducibility. Therefore, compared with the conventional method, the heat radiating means does not have to be attached to the exterior member one by one, and the manufacturing cost of the semiconductor device can be surely reduced.

Further, according to the semiconductor device manufacturing apparatus of the present invention, a plurality of concave and convex portions are provided on a predetermined surface inside a mold for defining the shape of the exterior member.
With this configuration, a plurality of concave and convex portions can be formed in a predetermined region of the exterior member that seals the semiconductor element, so that the surface area of the exterior member can be increased.

Therefore, since the heat exchange efficiency of the molded exterior member can be improved, a semiconductor device excellent in heat dissipation can be manufactured with good reproducibility. Compared with the conventional method, no heat radiation fins are required, so that the number of manufacturing steps of the semiconductor device can be reliably reduced, and the manufacturing cost of the semiconductor device can be reduced. INDUSTRIAL APPLICABILITY The present invention is very suitable when applied to a resin-sealed IC or the like that processes data signals at high speed.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration example of a semiconductor device 100 according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a configuration example of a molding apparatus 50 according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a configuration example of a mold 40.

FIG. 4 is a sectional view showing another configuration example of the mold 40.

FIG. 5 is a process chart showing a method (part 1) of manufacturing semiconductor device 100;

FIG. 6 is a process chart showing a method (part 2) of manufacturing semiconductor device 100;

FIG. 7 is a process chart showing a method (part 3) of manufacturing semiconductor device 100;

FIG. 8 is a cross-sectional view illustrating a configuration example of a semiconductor device 90 according to a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 3 ... External terminal, 5 ... Gold wire, 7 ... Mold resin, 28 ... Top surface, 29 ...
・ Lower surface, 40 ・ ・ ・ Mold, 50 ・ ・ ・ Molding device, 1
00 ... Semiconductor device

Claims (4)

[Claims] A semiconductor element; a terminal member disposed at a predetermined distance from the semiconductor element; a conductive member connecting the semiconductor element and the terminal member; and at least the semiconductor element and the conductive element. A semiconductor device comprising: an exterior member for sealing a member; and a plurality of uneven portions formed in a predetermined region of the exterior member. 2. A step of joining a semiconductor element and a terminal member having a predetermined shape with a conductive member, a step of sealing at least the semiconductor element and the conductive member with an exterior member, and a predetermined region of the exterior member Forming a plurality of concave and convex portions in the semiconductor device. 3. The method according to claim 2, further comprising a step of sealing at least the semiconductor element and the conductive member with a mold resin and forming a plurality of uneven portions in a predetermined region of the mold resin. Of manufacturing a semiconductor device. 4. An apparatus for sealing a semiconductor element with an exterior member, a mold for enclosing the semiconductor element and defining a shape of the exterior member, and an injection device for injecting the exterior member into the mold. An apparatus for manufacturing a semiconductor device, comprising: a plurality of uneven portions provided on a predetermined surface inside the mold.