JPH0623533Y2 - 化合物半導体多結晶合成装置 - Google Patents
化合物半導体多結晶合成装置Info
- Publication number
- JPH0623533Y2 JPH0623533Y2 JP4632688U JP4632688U JPH0623533Y2 JP H0623533 Y2 JPH0623533 Y2 JP H0623533Y2 JP 4632688 U JP4632688 U JP 4632688U JP 4632688 U JP4632688 U JP 4632688U JP H0623533 Y2 JPH0623533 Y2 JP H0623533Y2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- semiconductor polycrystal
- graphite container
- crucible
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 150000001875 compounds Chemical class 0.000 title claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000003786 synthesis reaction Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000001308 synthesis method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 241000155335 Foza Species 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4632688U JPH0623533Y2 (ja) | 1988-04-06 | 1988-04-06 | 化合物半導体多結晶合成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4632688U JPH0623533Y2 (ja) | 1988-04-06 | 1988-04-06 | 化合物半導体多結晶合成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01149436U JPH01149436U (enrdf_load_stackoverflow) | 1989-10-17 |
| JPH0623533Y2 true JPH0623533Y2 (ja) | 1994-06-22 |
Family
ID=31272597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4632688U Expired - Lifetime JPH0623533Y2 (ja) | 1988-04-06 | 1988-04-06 | 化合物半導体多結晶合成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0623533Y2 (enrdf_load_stackoverflow) |
-
1988
- 1988-04-06 JP JP4632688U patent/JPH0623533Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01149436U (enrdf_load_stackoverflow) | 1989-10-17 |
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