JPH06209009A - 半導体素子のゲート絶縁膜形成方法 - Google Patents
半導体素子のゲート絶縁膜形成方法Info
- Publication number
- JPH06209009A JPH06209009A JP5284230A JP28423093A JPH06209009A JP H06209009 A JPH06209009 A JP H06209009A JP 5284230 A JP5284230 A JP 5284230A JP 28423093 A JP28423093 A JP 28423093A JP H06209009 A JPH06209009 A JP H06209009A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- forming
- gate insulating
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005121 nitriding Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920019239A KR960002066B1 (ko) | 1992-10-20 | 1992-10-20 | 옥시 나이트라이드 제조방법 |
| KR19239/1992 | 1992-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06209009A true JPH06209009A (ja) | 1994-07-26 |
Family
ID=19341412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5284230A Pending JPH06209009A (ja) | 1992-10-20 | 1993-10-20 | 半導体素子のゲート絶縁膜形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH06209009A (it) |
| KR (1) | KR960002066B1 (it) |
| DE (1) | DE4335457A1 (it) |
| TW (1) | TW228613B (it) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053826B2 (en) | 2007-09-10 | 2011-11-08 | Renesas Electronics Corporation | Non-volatile semiconductor memory device and method of manufacturing the same |
| US8084315B2 (en) | 2008-11-20 | 2011-12-27 | Hitachi Kokusai Electric Inc. | Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation |
-
1992
- 1992-10-20 KR KR1019920019239A patent/KR960002066B1/ko not_active IP Right Cessation
-
1993
- 1993-10-15 TW TW082108570A patent/TW228613B/zh active
- 1993-10-18 DE DE4335457A patent/DE4335457A1/de not_active Ceased
- 1993-10-20 JP JP5284230A patent/JPH06209009A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053826B2 (en) | 2007-09-10 | 2011-11-08 | Renesas Electronics Corporation | Non-volatile semiconductor memory device and method of manufacturing the same |
| US8084315B2 (en) | 2008-11-20 | 2011-12-27 | Hitachi Kokusai Electric Inc. | Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4335457A1 (de) | 1994-04-21 |
| KR940010209A (ko) | 1994-05-24 |
| KR960002066B1 (ko) | 1996-02-10 |
| TW228613B (it) | 1994-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20060124 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20060201 |
|
| A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20060725 |