JPH059879B2 - - Google Patents

Info

Publication number
JPH059879B2
JPH059879B2 JP23180386A JP23180386A JPH059879B2 JP H059879 B2 JPH059879 B2 JP H059879B2 JP 23180386 A JP23180386 A JP 23180386A JP 23180386 A JP23180386 A JP 23180386A JP H059879 B2 JPH059879 B2 JP H059879B2
Authority
JP
Japan
Prior art keywords
column
mos transistor
column selection
memory cell
selection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23180386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6386196A (ja
Inventor
Yukihiro Saeki
Toshimasa Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61231803A priority Critical patent/JPS6386196A/ja
Priority to US07/094,706 priority patent/US5050124A/en
Priority to DE8787113251T priority patent/DE3784298T2/de
Priority to EP87113251A priority patent/EP0263318B1/en
Priority to KR1019870010907A priority patent/KR900008189B1/ko
Publication of JPS6386196A publication Critical patent/JPS6386196A/ja
Priority to US07/447,391 priority patent/US4954991A/en
Publication of JPH059879B2 publication Critical patent/JPH059879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP61231803A 1986-09-30 1986-09-30 半導体記憶装置 Granted JPS6386196A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置
US07/094,706 US5050124A (en) 1986-09-30 1987-09-09 Semiconductor memory having load transistor circuit
DE8787113251T DE3784298T2 (de) 1986-09-30 1987-09-10 Halbleiterspeicher.
EP87113251A EP0263318B1 (en) 1986-09-30 1987-09-10 Semiconductor memory
KR1019870010907A KR900008189B1 (ko) 1986-09-30 1987-09-30 반도체 기억장치
US07/447,391 US4954991A (en) 1986-09-30 1989-12-07 Semiconductor memory with p-channel load transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6386196A JPS6386196A (ja) 1988-04-16
JPH059879B2 true JPH059879B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=16929265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61231803A Granted JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPS6386196A (enrdf_load_stackoverflow)
KR (1) KR900008189B1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229963A (en) * 1988-09-21 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor nonvolatile memory device for controlling the potentials on bit lines
JP5966402B2 (ja) * 2012-02-10 2016-08-10 凸版印刷株式会社 半導体集積回路
US9007822B2 (en) * 2012-09-14 2015-04-14 Micron Technology, Inc. Complementary decoding for non-volatile memory

Also Published As

Publication number Publication date
JPS6386196A (ja) 1988-04-16
KR900008189B1 (ko) 1990-11-05
KR880004489A (ko) 1988-06-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term