JPS6386196A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6386196A
JPS6386196A JP61231803A JP23180386A JPS6386196A JP S6386196 A JPS6386196 A JP S6386196A JP 61231803 A JP61231803 A JP 61231803A JP 23180386 A JP23180386 A JP 23180386A JP S6386196 A JPS6386196 A JP S6386196A
Authority
JP
Japan
Prior art keywords
column
mos transistor
write
read
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61231803A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059879B2 (enrdf_load_stackoverflow
Inventor
Yukihiro Saeki
佐伯　幸弘
Toshimasa Nakamura
仲村　俊正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61231803A priority Critical patent/JPS6386196A/ja
Priority to US07/094,706 priority patent/US5050124A/en
Priority to DE8787113251T priority patent/DE3784298T2/de
Priority to EP87113251A priority patent/EP0263318B1/en
Priority to KR1019870010907A priority patent/KR900008189B1/ko
Publication of JPS6386196A publication Critical patent/JPS6386196A/ja
Priority to US07/447,391 priority patent/US4954991A/en
Publication of JPH059879B2 publication Critical patent/JPH059879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP61231803A 1986-09-30 1986-09-30 半導体記憶装置 Granted JPS6386196A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置
US07/094,706 US5050124A (en) 1986-09-30 1987-09-09 Semiconductor memory having load transistor circuit
DE8787113251T DE3784298T2 (de) 1986-09-30 1987-09-10 Halbleiterspeicher.
EP87113251A EP0263318B1 (en) 1986-09-30 1987-09-10 Semiconductor memory
KR1019870010907A KR900008189B1 (ko) 1986-09-30 1987-09-30 반도체 기억장치
US07/447,391 US4954991A (en) 1986-09-30 1989-12-07 Semiconductor memory with p-channel load transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6386196A true JPS6386196A (ja) 1988-04-16
JPH059879B2 JPH059879B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=16929265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61231803A Granted JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPS6386196A (enrdf_load_stackoverflow)
KR (1) KR900008189B1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229963A (en) * 1988-09-21 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor nonvolatile memory device for controlling the potentials on bit lines
JP2013164886A (ja) * 2012-02-10 2013-08-22 Toppan Printing Co Ltd 半導体集積回路
JP2015533008A (ja) * 2012-09-14 2015-11-16 マイクロン テクノロジー， インク． 不揮発性メモリのための相補型デコーディング

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229963A (en) * 1988-09-21 1993-07-20 Kabushiki Kaisha Toshiba Semiconductor nonvolatile memory device for controlling the potentials on bit lines
JP2013164886A (ja) * 2012-02-10 2013-08-22 Toppan Printing Co Ltd 半導体集積回路
JP2015533008A (ja) * 2012-09-14 2015-11-16 マイクロン テクノロジー， インク． 不揮発性メモリのための相補型デコーディング

Also Published As

Publication number Publication date
JPH059879B2 (enrdf_load_stackoverflow) 1993-02-08
KR900008189B1 (ko) 1990-11-05
KR880004489A (ko) 1988-06-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term