JPH058875B2 - - Google Patents
Info
- Publication number
- JPH058875B2 JPH058875B2 JP12546486A JP12546486A JPH058875B2 JP H058875 B2 JPH058875 B2 JP H058875B2 JP 12546486 A JP12546486 A JP 12546486A JP 12546486 A JP12546486 A JP 12546486A JP H058875 B2 JPH058875 B2 JP H058875B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- semiconductor laser
- active layer
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12546486A JPS62281487A (ja) | 1986-05-30 | 1986-05-30 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12546486A JPS62281487A (ja) | 1986-05-30 | 1986-05-30 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62281487A JPS62281487A (ja) | 1987-12-07 |
| JPH058875B2 true JPH058875B2 (enrdf_load_stackoverflow) | 1993-02-03 |
Family
ID=14910734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12546486A Granted JPS62281487A (ja) | 1986-05-30 | 1986-05-30 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62281487A (enrdf_load_stackoverflow) |
-
1986
- 1986-05-30 JP JP12546486A patent/JPS62281487A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62281487A (ja) | 1987-12-07 |
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